MOSFET IPW60R031CFD7. 600VCoolMOSªCFD7PowerTransistor

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1 MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.thelatestcoolmos CFD7isthe successortothecoolmos CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphaseshiftfullbridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),bestinclass reverserecoverycharge(qrr)andimprovedturnoffbehaviorcoolmos CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon s fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesignin process.thecoolmos CFD7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.altogether,coolmos CFD7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. PGTO2473 Drain Pin 2 Features Ultrafastbodydiode Lowgatecharge Bestinclassreverserecoverycharge(Qrr) ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness LowestFOMRDS(on)*QgandRDS(on)*Eoss BestinclassRDS(on)inSMDandTHDpackages Gate Pin 1 Source Pin 3 Benefits Excellenthardcommutationruggedness Highestreliabilityforresonanttopologies Highestefficiencywithoutstandingeaseofuse/performancetradeoff Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphaseshiftfullbridge(ZVS),LLCApplications Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofjedec47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 31 mω Qg,typ 141 nc ID,pulse 277 A 400V 16.3 µj Body diode dif/dt 1300 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO R031F7 see Appendix A 1

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 277 A TC=25 C Avalanche energy, single pulse EAS 326 mj ID=7.8A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 1.63 mj ID=7.8A; VDD=50V; see table 10 Avalanche current, single pulse IAS 7.8 A MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS= V Gate source voltage (static) VGS V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation Ptot 278 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 63 A TC=25 C Diode pulse current 2) IS,pulse 277 A TC=25 C Reverse diode dv/dt 3) dv/dt 70 V/ns VDS= V,ISD<=63A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 1300 A/µs VDS= V,ISD<=63A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 3

4 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.45 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6mm (0.063 in.) from case for 10s 4

5 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=1.63mA Zero gate voltage drain current 1) IDSS µa VDS=600V,VGS=0V,Tj=25 C VDS=600V,VGS=0V,Tj=125 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=32.6A,Tj=25 C VGS=10V,ID=32.6A,Tj=150 C Gate resistance RG 3.8 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 5623 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 111 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 2) Co(er) 203 pf VGS=0V,VDS= V Effective output capacitance, time related 3) Co(tr) 2101 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 48 ns Rise time tr 27 ns Turnoff delay time td(off) 175 ns Fall time tf 6 ns VDD=400V,VGS=10V,ID=16.0A, RG=1.8Ω;seetable9 VDD=400V,VGS=10V,ID=16.0A, RG=1.8Ω;seetable9 VDD=400V,VGS=10V,ID=16.0A, RG=1.8Ω;seetable9 VDD=400V,VGS=10V,ID=16.0A, RG=1.8Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 31 nc VDD=400V,ID=16.0A,VGS=0to10V Gate to drain charge Qgd 50 nc VDD=400V,ID=16.0A,VGS=0to10V Gate charge total Qg 141 nc VDD=400V,ID=16.0A,VGS=0to10V Gate plateau voltage Vplateau 5.4 V VDD=400V,ID=16.0A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 5

6 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 1.0 V VGS=0V,IF=32.6A,Tj=25 C Reverse recovery time trr ns Reverse recovery charge Qrr µc Peak reverse recovery current Irrm 9.2 A VR=400V,IF=16A,diF/dt=100A/µs; see table 8 VR=400V,IF=16A,diF/dt=100A/µs; see table 8 VR=400V,IF=16A,diF/dt=100A/µs; see table 8 6

7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 300 Diagram2:Safeoperatingarea µs µs µs Ptot[W] 150 ID[A] ms ms DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance µs µs ID[A] µs 1 ms ZthJC[K/W] single pulse 10 ms 10 2 DC VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V 8 V V 10 V 8 V V ID[A] V ID[A] V V V 4.5 V 5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 50 5 V 4.5 V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance Diagram8:Drainsourceonstateresistance V 6 V 6.5 V V 2.0 RDS(on)[Ω] V 20 V RDS(on)[normalized] ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=32.6A;VGS=10V 8

9 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge C V 400 V C 6 ID[A] 200 VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=16.0Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 3 Diagram12:Avalancheenergy C 25 C IF[A] 10 1 EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=7.8A;VDD=50V 9

10 Diagram13:Drainsourcebreakdownvoltage 690 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] 600 C[pF] 10 2 Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 10

11 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11

12 600V CoolMOSª CFD7 Power Transistor 6 Package Outlines Figure 1 Outline PGTO 2473, dimensions in mm/inches 12 Rev. 2.1,

13 600V CoolMOSª CFD7 Power Transistor 7 Appendix A Table 11 Related Links IFX CoolMOS CFD7 Webpage: IFX CoolMOS CFD7 application note: IFX CoolMOS CFD7 simulation model: IFX Design tools: 13 Rev. 2.1,

14 600V CoolMOSª CFD7 Power Transistor Revision History Revision: , Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Raised diode current for dv/dt and dif/dt (table 2) to value of continuous drain current; Changed internal Rg (table 4); Renamed related links (table 11) 2.1 Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.1,

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