MOSFET IPL60R385CP. 600VCoolMOSªCPPowerTransistor

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1 MOSFET 6VCoolMOSªCPPowerTransistor TheCoolMOS CPseriesoffersdeviceswhichprovideallbenefitsofa fastswitchingsjmosfetwhilenotsacrificingeaseofuse.extremelylow switchingandconductionlossesmakeswitchingapplicationsevenmore efficient,morecompact,lighter,andcooler.. ThinPAK8x8 ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.15mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpowerdensitydrivendesigns. Features Reducedboardspaceconsumption Increasedpowerdensity Shortcommutationloop Smoothswitchingwaveform easytouseproducts ExtremelylowlossesduetoverylowFOMRdson*QgandEoss QuallfiedaccordingtoJEDEC(JSTD2andJESD22)fortarget applications(server,adapter) Pbfreeplating,Halogenfree Gate Pin 1 Driver Source Pin 2 Drain Pin 5 Power Source Pin 3,4 Potentialapplications Server,Adapter Table1KeyPerformanceParameters Parameter Value Unit Tjmax 65 V RDS(on),max.385 Ω Qg,typ 17 nc ID,pulse 27 A 4V 3.2 µj Body diode dif/dt 4 A/µs Type/OrderingCode Package Marking RelatedLinks PGVSON4 6R385P see Appendix A 1 Rev.2.2,21796

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.2,21796

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 25 C TC = C Pulsed drain current 2) ID,pulse 27 A TC=25 C Avalanche energy, single pulse EAS 227 mj ID =3.4 A; VDD = 5 V Avalanche energy, repetitive 3) EAR.34 mj ID =3.4 A; VDD = 5 V Avalanche current, repetitive 3) IAR 3.4 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...48V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 83 W TC=25 C Operating Temperature Tj 4 15 C Storage Temperature Tstg C Continuous diode forward current IS 9. A TC=25 C Diode pulse current 2) IS,pulse 27 A TC = 25 C Reverse diode dv/dt 4) dv/dt 15 V/ns VDS=...4V,ISD<=ID,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 4 A/µs VDS=...4V,ISD<=ID,Tj=25 C see table 8 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.5 C/W Thermal resistance, junction ambient 5) RthJA 45 C/W Soldering temperature, wavesoldering only allowed at leads Tsold 26 C reflow MSL2a SMD version, device on PCB, 6cm² cooling area 1) Limited by Tj max. Maximum duty cycle 2) Pulse width tp limited by Tj,max 3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f; Pulse width tp limited by Tj,max 4) IdenticallowsideandhighsideswitchwithidenticalRG 5) Device on 4mm*4mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 7?m) for drain connection. PCB is vertical without air stream cooling. 3 Rev.2.2,21796

4 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=.25mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.34mA Zero gate voltage drain current IDSS 1 µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=15 C Gatesource leakage curent IGSS na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=V,ID=5.2A,Tj=25 C VGS=V,ID=5.2A,Tj=15 C Gate resistance RG 1.8 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 79 pf VGS=V,VDS=V,f=1MHz Output capacitance Coss 38 pf VGS=V,VDS=V,f=1MHz Effective output capacitance, energy related 1) Co(er) 36 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 96 pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) ns Rise time tr 5 ns Turnoff delay time td(off) 4 ns Fall time tf 5 ns VDD=4V,VGS=13V,ID=5.2A, RG=3.3Ω;seetable9 VDD=4V,VGS=13V,ID=5.2A, RG=3.3Ω;seetable9 VDD=4V,VGS=13V,ID=5.2A, RG=3.3Ω;seetable9 VDD=4V,VGS=13V,ID=5.2A, RG=3.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=48V,ID=5.2A,VGS=toV Gate to drain charge Qgd 6 nc VDD=48V,ID=5.2A,VGS=toV Gate charge total Qg 17 nc VDD=48V,ID=5.2A,VGS=toV Gate plateau voltage Vplateau 5. V VDD=48V,ID=5.2A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto8%V(BR)DSS 4 Rev.2.2,21796

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=5.2A,Tj=25 C Reverse recovery time trr 26 ns Reverse recovery charge Qrr 3.1 µc Peak reverse recovery current Irrm 24 A VR=4V,IF=5.2diF/dt=A/µs see table 8 VR=4V,IF=5.2diF/dt=A/µs see table 8 VR=4V,IF=5.2diF/dt=A/µs see table 8 5 Rev.2.2,21796

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 9 Diagram2:Safeoperatingarea µs 7 1 µs 6 µs Ptot[W] 5 4 ID[A] 1 ms ms 3 DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance 1 1 µs 1 µs µs.5 ID[A] 1 1 ms ms DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.2,21796

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 7 V 15 2 V V 8 V 7 V 6 V 25 ID[A] 2 ID[A] 5.5 V 15 6 V 5 V 5.5 V V 5 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 2. 5 V 5.5 V 6 V 6.5 V Diagram8:Drainsourceonstateresistance RDS(on)[Ω] V V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=5.2A;VGS=V 7 Rev.2.2,21796

8 Diagram9:Typ.transfercharacteristics 4 Diagram:Typ.gatecharge C V 48 V 25 6 ID[A] 2 VGS[V] C VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=5.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 Diagram12:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=3.4A;VDD=5V 8 Rev.2.2,21796

9 Diagram13:Drainsourcebreakdownvoltage 68 Diagram14:Typ.capacitances VBR(DSS)[V] 62 6 C[pF] 3 2 Ciss Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=.25mA VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev.2.2,21796

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.2,21796

11 6PackageOutlines Figure1OutlinePGVSON4,dimensionsinmm/inches 11 Rev.2.2,21796

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12 Rev.2.2,21796

13 6V CoolMOSª CP Power Transistor Revision History Revision: 21796, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Updated MSL; style updated Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: Published by Infineon Technologies AG München, Germany 217 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.2, 21796

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