MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPX50R1K4CE. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 5VCoolMOS CEPowerTransistor IPX5R1K4CE DataSheet Rev.2. Final PowerManagement&Multimarket

2 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. 1 DPAK tab 2 IPAK tab 1 2 Drain Pin 2 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Gate Pin 1 Source Pin Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Tj,max 55 V RDS(on),max 1.4 Ω Qg.typ 8.2 nc ID,pulse 8.8 A Eoss@4V.79 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks IPD5R1K4CE PGTO 252 5S1K4CE see Appendix A IPU5R1K4CE PGTO Rev.2.,

3 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.,

4 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 25 C TC = 1 C Pulsed drain current 2) ID,pulse 8.8 A TC=25 C Avalanche energy, single pulse EAS 49 mj ID =1.1A; VDD = 5V Avalanche energy, repetitive EAR.7 mj ID =1.1A; VDD = 5V Avalanche current, repetitive IAR 1.1 A MOSFET dv/dt ruggedness dv/dt 5 V/ns =...4V Gate source voltage Power dissipation (non FullPAK) TO252, TO251 VGS 2 2 V static; AC (f>1 Hz) Ptot 25 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 2.6 A TC=25 C Diode pulse current 2) IS,pulse 8.8 A TC = 25 C Reverse diode dv/dt ) dv/dt 15 V/ns =...4V,ISD<=IS,Tj=25 C, tcond<2µs Maximum diode commutation speed ) dif/dt 5 A/µs =...4V,ISD<=IS,Tj=25 C, tcond<2µs Thermalcharacteristics TableThermalcharacteristicsDPAK,IPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.91 C/W Thermal resistance, junction ambient 4) RthJA Soldering temperature, wave & reflowsoldering allowed 5 62 C/W Tsold 26 C reflow MSL 1 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm 2 cooling area 4) 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj,max ) VDClink=4V;,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4) Device on 4mm*4mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 7µm) for drain connection. PCB is vertical without air stream cooling. 4 Rev.2.,

5 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 5 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V =VGS,ID=.7mA Zero gate voltage drain current IDSS 1 1 µa =5V,VGS=V,Tj=25 C =5V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=.9A,Tj=25 C VGS=1V,ID=.9A,Tj=15 C Gate resistance RG 7 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 178 pf VGS=V,=1V,f=1MHz Output capacitance Coss 11 pf VGS=V,=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 1 pf VGS=V,=...4V Effective output capacitance, time related 2) Co(tr) 6 pf ID=constant,VGS=V,=...4V Turnon delay time td(on) 6.5 ns Rise time tr 6 ns Turnoff delay time td(off) 2 ns Fall time tf ns VDD=4V,VGS=1V,ID=1.1A, RG=5.Ω VDD=4V,VGS=1V,ID=1.1A, RG=5.Ω VDD=4V,VGS=1V,ID=1.1A, RG=5.Ω VDD=4V,VGS=1V,ID=1.1A, RG=5.Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1 nc VDD=4V,ID=1.1A,VGS=to1V Gate to drain charge Qgd 4.6 nc VDD=4V,ID=1.1A,VGS=to1V Gate charge total Qg 8.2 nc VDD=4V,ID=1.1A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=4V,ID=1.1A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileisrisingfromto8%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileisrisingfromto8%V(BR)DSS 5 Rev.2.,

6 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.8 V VGS=V,IF=1.1A,Tf=25 C Reverse recovery time trr 12 ns VR=4V,IF=1.1A,diF/dt=1A/µs Reverse recovery charge Qrr.5 µc VR=4V,IF=1.1A,diF/dt=1A/µs Peak reverse recovery current Irrm 6.8 A VR=4V,IF=1.1A,diF/dt=1A/µs 6 Rev.2.,

7 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPak) 4 Diagram2:Max.transientthermalimpedance(NonFullPak) Ptot[W] 2 ZthJC[K/W] single pulse TC[ C] Ptot=f(TC) tp[s] ZthJC=f(tP);parameter:D=tp/T Diagram:Safeoperatingarea(NonFullPak)Tj=25 C 1 2 Diagram4:Safeoperatingarea(NonFullPak)Tj=8 C µs µs ID[A] 1 1 µs 1 µs ID[A] 1 1 µs 1 µs ms ms ms DC [V] ID=f();TC=25 C;D=;parameter:tp [V] ID=f();TC=8 C;D=;parameter:tp 1 ms DC 7 Rev.2.,

8 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE Diagram5:Typ.outputcharacteristicsTj=25 C Diagram6:Typ.outputcharacteristicsTj=125 C V 6 2 V 1 V ID[A] V 8 V 7 V 6 V ID[A] V 7 V 6 V 5.5 V V 5 V 4.5 V [V] 5 V V [V] ID=f();Tj=25 C;parameter:VGS ID=f();Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance Diagram8:Drainsourceonstateresistance 4..5 RDS(on)[Ω] V 5.5 V 6 V 6.5 V 7 V 1 V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=.9A;VGS=1V 8 Rev.2.,

9 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE Diagram9:Typ.transfercharacteristics Diagram1:Typ.gatecharge C V 4 V ID[A] C VGS[V] VGS[V] ID=f(VGS);=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=1.1Apulsed;parameter:VDD Diagram11:Avalancheenergy 6 Diagram12:Drainsourcebreakdownvoltage EAS[mJ] VBR(DSS)[V] Tj[ C] EAS=f(Tj);ID=1.1A;VDD=5V Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9 Rev.2.,

10 5VCoolMOS CEPowerTransistor IPD5R1K4CE,IPU5R1K4CE Diagram1:Typ.capacitances 1 4 Diagram14:Typ.Cossstoredenergy Ciss.8 C[pF] 1 2 Eoss[µJ] Coss Crss [V] C=f();VGS=V;f=1MHz [V] Eoss=f() Diagram15:Forwardcharacteristicsofreversediode 1 1 IF[A] C 25 C VSD[V] IF=f(VSD);parameter:Tj 1 Rev.2.,

11 5V CoolMOS CE Power Transistor IPD5R1K4CE, IPU5R1K4CE 6 Test Circuits Table 8 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 ( peak) trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 1 %Irrm QS Table 9 Switching times Switching times test circuit for inductive load Switching times waveform 9% VGS VGS 1% td(on) ton tr td(off) tf toff Table 1 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID 11 ID Rev. 2.,

12 5V CoolMOS CE Power Transistor IPD5R1K4CE, IPU5R1K4CE 7 Package Outlines *) mold flash not included DIM A A1 b b2 b c c2 D D1 E E1 e e1 N H L L L4 F1 F2 F F4 F5 F6 MILLIMETERS MIN MAX (BSC) 4.57 (BSC) INCHES MIN MAX (BSC).18 (BSC) DOCUMENT NO. Z8B28 SCALE mm EUROPEAN PROJECTION ISSUE DATE REVISION 5 Figure 1 Outline PGTO 252, dimensions in mm/inches 12 Rev. 2.,

13 5V CoolMOS CE Power Transistor IPD5R1K4CE, IPU5R1K4CE TO25121/41/45 DOCUMENT NO. Z8B DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN INCHES MAX MIN MAX SCALE mm EUROPEAN PROJECTION ISSUE DATE REVISION 4 Figure 2 Outline PGTO 251, dimensions in mm/inches 1 Rev. 2.,

14 5V CoolMOS CE Power Transistor IPD5R1K4CE, IPU5R1K4CE 8 Appendix A Table 11 Related Links IFX CoolMOS Webpage: IFX Design tools: 14 Rev. 2.,

15 5V CoolMOS CE Power Transistor IPD5R1K4CE, IPU5R1K4CE Revision History IPD5R1K4CE, IPU5R1K4CE Revision: , Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version release of final datasheet update to Halogen free mold compound Updated to standard grade qualified & updated package drawing We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.,