MOSFET IPN60R3K4CE. 600VCoolMOSªCEPowerTransistor

Transcription

1 MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. PGSOT223 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 3.4 Ω Qg,typ 4.6 nc ID,pulse 3.9 A Eoss@400V 0.57 µj Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks PGSOT223 60S3K4 see Appendix A 1 Rev.2.0,

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.0,

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC = 25 C TC = 100 C Pulsed drain current 2) ID,pulse 3.9 A TC = 25 C Avalanche energy, single pulse EAS 6 mj ID = 0.3A; VDD = 50V Avalanche energy, repetitive EAR 0.04 mj ID = 0.3A; VDD = 50V Avalanche current, repetitive IAR 0.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS= V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 5.0 W TC=25 C Operating and storage temperature Tj,Tstg C Continuous diode forward current IS 0.8 A TC=25 C Diode pulse current 2) IS,pulse 3.9 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS= V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 500 A/µs VDS= V,ISD<=IS,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point Thermal resistance, junction ambient for minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wavesoldering only allowed at leads RthJS 25.2 C/W RthJA 160 C/W minimal footprint RthJA 75 C/W Tsold 260 C reflow MSL3 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer 70µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.0,

4 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=0.25mA Gate threshold voltage VGS(th) V VDS=VGS,ID=0.04mA Zero gate voltage drain current IDSS 10 1 µa VDS=600V,VGS=0V,Tj=25 C VDS=600V,VGS=0V,Tj=150 C Gatesource leakage curent IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=0.5A,Tj=25 C VGS=10V,ID=0.5A,Tj=150 C Gate resistance RG 15 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 93 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 9 pf VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) 6.4 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 21 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 8 ns Rise time tr 10 ns Turnoff delay time td(off) 40 ns Fall time tf 60 ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 0.5 nc VDD=480V,ID=0.6A,VGS=0to10V Gate to drain charge Qgd 2.6 nc VDD=480V,ID=0.6A,VGS=0to10V Gate charge total Qg 4.6 nc VDD=480V,ID=0.6A,VGS=0to10V Gate plateau voltage Vplateau 5.4 V VDD=480V,ID=0.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 4 Rev.2.0,

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=0.6A,Tf=25 C Reverse recovery time trr 160 ns VR=400V,IF=0.6A,diF/dt=100A/µs Reverse recovery charge Qrr 0.42 µc VR=400V,IF=0.6A,diF/dt=100A/µs Peak reverse recovery current Irrm 5.1 A VR=400V,IF=0.6A,diF/dt=100A/µs 5 Rev.2.0,

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram2:Safeoperatingarea µs 5 10 µs µs 4 1 ms Ptot[W] 3 ID[A] 10 1 DC 10 ms TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 1 Diagram4:Max.transientthermalimpedance µs µs 10 µs ms 0.1 ID[A] 10 1 DC 10 ms ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.0,

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 10 V V 10 V 8 V V V ID[A] V ID[A] V V V V 5 V 4.5 V V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 9.0 Diagram8:Drainsourceonstateresistance V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)[Ω] RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=0.5A;VGS=10V 7 Rev.2.0,

8 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge C V 480 V ID[A] 2.5 VGS[V] C VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=0.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode C 125 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=0.3A;VDD=50V 8 Rev.2.0,

9 Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances VBR(DSS)[V] C[pF] Ciss Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=0.25mA VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev.2.0,

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 10 Rev.2.0,

11 6PackageOutlines DOCUMENT NO. Z8B DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A2 1, b b c D E E1 e e1 L N O BASIC 4.6 BASIC BASIC BASIC SCALE EUROPEAN PROJECTION ISSUE DATE REVISION 01 5mm Figure1OutlinePGSOT223,dimensionsinmm/inches 11 Rev.2.0,

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12 Rev.2.0,

13 RevisionHistory Revision: ,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.0,