MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R125P6. DataSheet. PowerManagement&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket
2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. TO247 TO220 tab TO220FP Drain Pin 2, Tab Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 650 V RDS(on),max 125 mω Qg.typ 56 nc ID,pulse 87 A Eoss@400V 7.2 µj Body diode di/dt 300 A/µs Type/OrderingCode Package Marking RelatedLinks IPW60R125P6 PGTO 247 IPP60R125P6 PGTO 220 6R125P6 see Appendix A IPA60R125P6 PGTO 220 FullPAK 2 Rev.2.0,
3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.0,
4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 87 A TC=25 C Avalanche energy, single pulse EAS 636 mj ID=5.2A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 0.96 mj ID=5.2A; VDD=50V; see table 10 Avalanche current, repetitive IAR 5.2 A MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS= V Gate source voltage (static) VGS V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation (Non FullPAK) TO220, TO247 Power dissipation (FullPAK) TO220FP Ptot 219 W TC=25 C Ptot 34 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque (Non FullPAK) TO220, TO247 Mounting torque (FullPAK) TO220FP 60 Ncm M3 and M3.5 screws 50 Ncm M2.5 screws Continuous diode forward current IS 26.0 A TC=25 C Diode pulse current 2) IS,pulse 87 A TC=25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS= V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 300 A/µs VDS= V,ISD<=IS,Tj=25 C see table 8 Insulation withstand voltage for TO220FP VISO 2500 V Vrms,TC=25 C,t=1min 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4 Rev.2.0,
5 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO220,TO247 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.57 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 260 C 1.6mm (0.063 in.) from case for 10s Table4Thermalcharacteristics(FullPAK)TO220FP Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.65 C/W Thermal resistance, junction ambient RthJA 80 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 260 C 1.6mm (0.063 in.) from case for 10s 5 Rev.2.0,
6 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table5Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=0.96mA Zero gate voltage drain current IDSS 10 2 µa VDS=600,VGS=0V,Tj=25 C VDS=600,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Ω VGS=10V,ID=11.6A,Tj=25 C VGS=10V,ID=11.6A,Tj=150 C Gate resistance RG 1.7 Ω f=1mhz,opendrain Table6Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 2660 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 110 pf VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) 90 pf VGS=0V,VDS= V Effective output capacitance, time related 2) Co(tr) 398 pf ID=constant,VGS=0V,VDS= V Turnon delay time td(on) 14 ns Rise time tr 9 ns Turnoff delay time td(off) 44 ns Fall time tf 5 ns VDD=400V,VGS=13V,ID=14.5A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=14.5A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=14.5A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=14.5A, RG=1.7Ω;seetable9 Table7Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 16 nc VDD=400V,ID=14.5A,VGS=0to10V Gate to drain charge Qgd 20 nc VDD=400V,ID=14.5A,VGS=0to10V Gate charge total Qg 56 nc VDD=400V,ID=14.5A,VGS=0to10V Gate plateau voltage Vplateau 6.1 V VDD=400V,ID=14.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 6 Rev.2.0,
7 Table8Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=14.5A,Tj=25 C Reverse recovery time trr 385 ns Reverse recovery charge Qrr 7 µc Peak reverse recovery current Irrm 32 A VR=400V,IF=14.5A,diF/dt=100A/µs; see table 8 VR=400V,IF=14.5A,diF/dt=100A/µs; see table 8 VR=400V,IF=14.5A,diF/dt=100A/µs; see table 8 7 Rev.2.0,
8 5Electricalcharacteristicsdiagrams 600VCoolMOS P6PowerTransistor Diagram1:Powerdissipation(NonFullPAK) 250 Diagram2:Powerdissipation(FullPAK) Ptot[W] Ptot[W] TC[ C] Ptot=f(TC) TC[ C] Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) 10 1 Diagram4:Max.transientthermalimpedance(FullPAK) ZthJC[K/W] ZthJC[K/W] single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T 10 2 single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,
9 Diagram5:Safeoperatingarea(NonFullPAK) 10 3 Diagram6:Safeoperatingarea(FullPAK) 10 3 ID[A] DC 1 µs 10 µs 100 µs 1 ms 10 ms ID[A] µs 10 µs 100 µs 1 ms 10 ms DC VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) µs Diagram8:Safeoperatingarea(FullPAK) µs 10 µs 100 µs 1 ms 10 ms µs 100 µs 1 ms 10 ms ID[A] DC ID[A] DC VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 9 Rev.2.0,
10 Diagram9:Typ.outputcharacteristics Diagram10:Typ.outputcharacteristics V 8 V 20 V V 10 V 8 V 7 V ID[A] V ID[A] V 20 6 V V V V 5 V VDS[V] 5 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID=f(VDS);Tj=125 C;parameter:VGS Diagram11:Typ.drainsourceonstateresistance 0.55 Diagram12:Drainsourceonstateresistance RDS(on)[Ω] V 6 V 6.5 V 7 V 10 V RDS(on)[Ω] % typ V ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=11.6A;VGS=10V 10 Rev.2.0,
11 Diagram13:Typ.transfercharacteristics Diagram14:Typ.gatecharge C V 480 V ID[A] C VGS[V] VGS[V] ID=f(VGS);VDS=20V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=14.5Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode 10 2 Diagram16:Avalancheenergy IF[A] 125 C 25 C EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=5.2A;VDD=50V 11 Rev.2.0,
12 Diagram17:Drainsourcebreakdownvoltage 700 Diagram18:Typ.capacitances Ciss VBR(DSS)[V] C[pF] 10 2 Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 12 Rev.2.0,
13 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 6 Test Circuits Table 9 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table 10 Switching times Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table 11 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS 13 ID VDS Rev. 2.0,
14 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 7 Package Outlines Figure 1 Outline PGTO 247, dimensions in mm/inches 14 Rev. 2.0,
15 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 Figure 2 Outline PGTO 220, dimensions in mm/inches 15 Rev. 2.0,
16 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 Figure 3 Outline PGTO 220 FullPAK, dimensions in mm/inches 16 Rev. 2.0,
17 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 8 Appendix A Table 12 Related Links IFX CoolMOSTM P6 Webpage: IFX CoolMOSTM P6 application note: IFX CoolMOSTM P6 simulation model: IFX Design tools: 17 Rev. 2.0,
18 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 Revision History IPW60R125P6, IPP60R125P6, IPA60R125P6 Revision: , Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 18 Rev. 2.0,
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