MOSFET IPA60R170CFD7. 600VCoolMOSªCFD7PowerTransistor

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1 MOSFET 6VCoolMOSªCFD7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.thelatestcoolmos CFD7isthe successortothecoolmos CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphaseshiftfullbridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),bestinclass reverserecoverycharge(qrr)andimprovedturnoffbehaviorcoolmos CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon s fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesignin process.thecoolmos CFD7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.altogether,coolmos CFD7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. PGTO22FP Drain Pin 2 Features Ultrafastbodydiode Lowgatecharge Bestinclassreverserecoverycharge(Qrr) ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness LowestFOMRDS(on)*QgandRDS(on)*Eoss BestinclassRDS(on)inSMDandTHDpackages Gate Pin 1 Source Pin 3 Benefits Excellenthardcommutationruggedness Highestreliabilityforresonanttopologies Highestefficiencywithoutstandingeaseofuse/performancetradeoff Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphaseshiftfullbridge(ZVS),LLCApplications Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofjedec47/2/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 65 V RDS(on),max 17 mω Qg,typ 28 nc ID,pulse 51 A 4V 3.2 µj Body diode dif/dt 13 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 6R17F7 see Appendix A 1

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 8 5 A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 51 A TC=25 C Avalanche energy, single pulse EAS 6 mj ID=3.7A; VDD=5V; see table 1 Avalanche energy, repetitive EAR.3 mj ID=3.7A; VDD=5V; see table 1 Avalanche current, single pulse IAS 3.7 A MOSFET dv/dt ruggedness dv/dt 12 V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 26 W TC=25 C Storage temperature Tstg C Operating junction temperature Tj C Mounting torque 5 Ncm M2.5 screws Continuous diode forward current IS 8 A TC=25 C Diode pulse current 2) IS,pulse 51 A TC=25 C Reverse diode dv/dt 3) dv/dt 7 V/ns VDS=...4V,ISD<=7A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 13 A/µs VDS=...4V,ISD<=7A,Tj=25 C see table 8 Insulation withstand voltage VISO 25 V Vrms,TC=25 C,t=1min 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 3

4 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.79 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6mm (.63 in.) from case for 1s 4

5 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.3mA Zero gate voltage drain current 1) IDSS µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=6.A,Tj=25 C VGS=1V,ID=6.A,Tj=15 C Gate resistance RG 1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 1199 pf VGS=V,VDS=4V,f=25kHz Output capacitance Coss 22 pf VGS=V,VDS=4V,f=25kHz Effective output capacitance, energy related 2) Co(er) 4 pf VGS=V,VDS=...4V Effective output capacitance, time related 3) Co(tr) 42 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 31 ns Rise time tr 15 ns Turnoff delay time td(off) 68 ns Fall time tf 9 ns VDD=4V,VGS=1V,ID=7.A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=7.A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=7.A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=7.A, RG=1.2Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 7 nc VDD=4V,ID=7.A,VGS=to1V Gate to drain charge Qgd 9 nc VDD=4V,ID=7.A,VGS=to1V Gate charge total Qg 28 nc VDD=4V,ID=7.A,VGS=to1V Gate plateau voltage Vplateau 5.7 V VDD=4V,ID=7.A,VGS=to1V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 3) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 5

6 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 1. V VGS=V,IF=6.A,Tj=25 C Reverse recovery time trr ns Reverse recovery charge Qrr µc Peak reverse recovery current Irrm 6.8 A VR=4V,IF=7A,diF/dt=1A/µs; see table 8 VR=4V,IF=7A,diF/dt=1A/µs; see table 8 VR=4V,IF=7A,diF/dt=1A/µs; see table 8 6

7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 3 Diagram2:Safeoperatingarea µs 1 µs µs Ptot[W] 15 ID[A] ms ms DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance µs 1 µs µs 1.2 ID[A] ms 1 ms ZthJC[K/W] single pulse 1 3 DC VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 7

8 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 8 2 V 1 V 5 2 V 1 V 8 V 6 8 V 4 7 V 3 ID[A] 4 7 V ID[A] 2 6 V 2 6 V V 5.5 V 4.5 V5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 V 4.5 V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance.46 Diagram8:Drainsourceonstateresistance V 6 V 6.5 V 7 V 1 V 2. RDS(on)[Ω] V RDS(on)[normalized] ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=6.A;VGS=1V 8

9 Diagram9:Typ.transfercharacteristics Diagram1:Typ.gatecharge C V 6 4 V ID[A] 4 15 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=7.Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 Diagram12:Avalancheenergy IF[A] 125 C EAS[mJ] C VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=3.7A;VDD=5V 9

10 Diagram13:Drainsourcebreakdownvoltage 69 Diagram14:Typ.capacitances Ciss 63 VBR(DSS)[V] 6 C[pF] 1 2 Coss 1 1 Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 1

11 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11

12 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b b b c D D1 E e e1 N H L L1 øp Q (BSC) (BSC) DOCUMENT NO. Z8B3319 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE REVISION 5 5mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 12

13 7AppendixA Table11RelatedLinks IFXCoolMOSP7Webpage: IFXCoolMOSP7applicationnote: IFXCoolMOSP7simulationmodel: IFXDesigntools: 13

14 RevisionHistory Revision:217825,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 217InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14

15 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: XKSA1

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