MOSFET IPP80R900P7. 800VCoolMOSªP7PowerTransistor

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1 MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. PGTO22 tab Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thof3VandsmallestV(GS)thvariationof±.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj=25 C 8 V RDS(on),max.9 Ω Qg,typ 15 nc ID 6 A 5V 1.4 µj VGS(th),typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 223 8R9P7 see Appendix A 1 Rev.2.1,21828

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.1,21828

3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC= C Pulsed drain current 2) ID,pulse 14 A TC=25 C Avalanche energy, single pulse EAS 13 mj ID=.9A; VDD=5V Avalanche energy, repetitive EAR.11 mj ID=.9A; VDD=5V Avalanche current, repetitive IAR.9 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=to4V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 45 W TC=25 C Operating and storage temperature Tj,Tstg C Mounting torque 6 Ncm M3 and M3.5 screws Continuous diode forward current IS 4.4 A TC=25 C Diode pulse current 2) IS,pulse 14 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=to4V,ISD<=1.1A,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=to4V,ISD<=1.1A,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.8 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6 mm (.63 in.) from case for s 1) Limited by Tj max. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 3 Rev.2.1,21828

4 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=.11mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 1 µa VDS=8V,VGS=V,Tj=25 C VDS=8V,VGS=V,Tj=15 C IGSS 1 µa VGS=2V,VDS=V RDS(on) Ω VGS=V,ID=2.2A,Tj=25 C VGS=V,ID=2.2A,Tj=15 C Gate resistance RG 1.4 Ω f=25khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 35 pf VGS=V,VDS=5V,f=25kHz Output capacitance Coss 6 pf VGS=V,VDS=5V,f=25kHz Effective output capacitance, energy related 1) Co(er) 11 pf VGS=V,VDS=to5V Effective output capacitance, time related 2) Co(tr) 135 pf ID=constant,VGS=V,VDS=to5V Turnon delay time td(on) 12 ns Rise time tr 8 ns Turnoff delay time td(off) 4 ns Fall time tf 2 ns VDD=4V,VGS=13V,ID=2.2A, RG=15Ω VDD=4V,VGS=13V,ID=2.2A, RG=15Ω VDD=4V,VGS=13V,ID=2.2A, RG=15Ω VDD=4V,VGS=13V,ID=2.2A, RG=15Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2 nc VDD=64V,ID=2.2A,VGS=toV Gate to drain charge Qgd 6 nc VDD=64V,ID=2.2A,VGS=toV Gate charge total Qg 15 nc VDD=64V,ID=2.2A,VGS=toV Gate plateau voltage Vplateau 4.5 V VDD=64V,ID=2.2A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto5V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto5V 4 Rev.2.1,21828

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=2.2A,Tf=25 C Reverse recovery time trr 6 ns VR=4V,IF=1.1A,diF/dt=5A/µs Reverse recovery charge Qrr 5 µc VR=4V,IF=1.1A,diF/dt=5A/µs Peak reverse recovery current Irrm 11 A VR=4V,IF=1.1A,diF/dt=5A/µs 5 Rev.2.1,21828

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 5 Diagram2:Safeoperatingarea ms µs 1 ms µs 1 µs 35 DC 3 Ptot[W] 25 ID[A] TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance ms ms µs µs 1 µs DC.5 ID[A] 1 ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,21828

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 7 V 6 V 12 2 V V 8 V 7 V 6 V V ID[A] V ID[A] 6 5 V 6 5 V V V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance Diagram8:Drainsourceonstateresistance V 5.5 V RDS(on)[Ω] V 6.5 V 7 V V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=2.2A;VGS=V 7 Rev.2.1,21828

8 Diagram9:Typ.transfercharacteristics C Diagram:Typ.gatecharge V 64 V ID[A] 8 15 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 15 Qgate[nC] VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=.9A;VDD=5V 8 Rev.2.1,21828

9 Diagram13:Drainsourcebreakdownvoltage 95 Diagram14:Typ.capacitances Ciss 85 2 VBR(DSS)[V] 8 C[pF] 1 Coss 75 Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev.2.1,21828

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,21828

11 11 8VCoolMOSªP7PowerTransistor Rev.2.1, PackageOutlines MILLIMETERS b2 c D D2 E E1 e e1 H1 L L1 øp Q N D DIM A A1 A2 b 4.3 MIN m MAX j INCHES m MIN MAX m j m EUROPEAN PROJECTION ISSUE DATE 2.5 5mm SCALE b b REVISION DOCUMENT NO. Z8B3318 c Figure1OutlinePGTO223,dimensionsinmm/inches

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12 Rev.2.1,21828

13 RevisionHistory Revision:21828,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,21828

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