MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 500VCoolMOS CEPowerTransistor IPA50R380CE. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 5VCoolMOS CEPowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket

2 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEseriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingsjmosfetwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. TO22FP Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforconsumergradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.pcsilverbox,adapter,lcd&pdptvandlighting. Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 55 V RDS(on),max.38 Ω Qg,typ 24.8 nc ID,pulse 32.4 A 4V 2.54 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 5R38CE see Appendix A 2 Rev.2.2,214612

3 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.2,214612

4 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID Pulsed drain current 2) ID,pulse 32.4 A TC=25 C A TC = 25 C; TO22 TC = 25 C; TO22 FullPAK TC = 1 C; TO22 FullPAK Avalanche energy, single pulse EAS 173 mj ID =4A; VDD = 5V Avalanche energy, repetitive EAR.26 mj ID =4A; VDD = 5V Avalanche current, repetitive IAR 4. A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...4V Gate source voltage VGS V static; AC (f>1 Hz) Power disspiation Ptot 29.2 W TC=25 C Operating and storage temperature Tj,Tstg 4 15 C Mounting torque 5 Ncm M2.5 screws Continuous diode forward current IS 5.4 A TC=25 C Diode pulse current 2) IS,pulse 32.4 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C Insulation withstand voltage for TO22 FullPAK VISO 25 V Vrms,TC=25 C,t=1min 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.28 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4 Rev.2.2,214612

5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 5 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.26mA Zero gate voltage drain current IDSS 1 1 µa VDS=5V,VGS=V,Tj=25 C VDS=5V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=13V,ID=3.2A,Tj=25 C VGS=13V,ID=3.2A,Tj=15 C Gate resistance RG 3 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 584 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 4 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 32 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 133 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 7.2 ns Rise time tr 5.6 ns Turnoff delay time td(off) 35 ns Fall time tf 8.6 ns VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3.1 nc VDD=4V,ID=3.9A,VGS=to1V Gate to drain charge Qgd 13.1 nc VDD=4V,ID=3.9A,VGS=to1V Gate charge total Qg 24.8 nc VDD=4V,ID=3.9A,VGS=to1V Gate plateau voltage Vplateau 5.3 V VDD=4V,ID=3.9A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 5 Rev.2.2,214612

6 Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.85 V VGS=V,IF=3.9A,Tj=25 C Reverse recovery time trr 27 ns VR=4V,IF=3.9A,diF/dt=1A/µs Reverse recovery charge Qrr 1.7 µc VR=4V,IF=3.9A,diF/dt=1A/µs Peak reverse recovery current Irrm 15.5 A VR=4V,IF=3.9A,diF/dt=1A/µs 6 Rev.2.2,214612

7 5Electricalcharacteristicsdiagrams Powerdissipation(FullPAK) 4 Max.transientthermalimpedance(FullPAK) Ptot[W] 2 ZthJC[K/W] single pulse TC[ C] Ptot=f(TC) tp[s] ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(FullPAK)Tj=25 C 1 2 Safeoperatingarea(FullPAK)Tj=8 C µs µs 1 µs 1 µs ID[A] 1 1 µs 1 ms 1 ms ID[A] 1 1 µs 1 ms 1 ms 1 1 DC 1 1 DC VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 7 Rev.2.2,214612

8 Typ.outputcharacteristicsTj=25 C 4 Typ.outputcharacteristicsTj=125 C V 1 V 2 2 V 1 V 25 8 V 15 8 V 7 V ID[A] V ID[A] 1 6 V 1 6 V 5.5 V 5 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 5 5 V 4.5 V VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Typ.drainsourceonstateresistance 1.4 Drainsourceonstateresistance V 5.5 V 6 V 6.5 V 7 V.8 98% RDS(on)[Ω] 1. RDS(on)[Ω].6 typ 1 V ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=3.2A;VGS=13V 8 Rev.2.2,214612

9 Typ.transfercharacteristics Typ.gatecharge C V V ID[A] C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD Avalancheenergy Drainsourcebreakdownvoltage EAS[mJ] VBR(DSS)[V] Tj[ C] EAS=f(Tj);ID=4A;VDD=5V Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9 Rev.2.2,214612

10 Typ.capacitances 1 4 Typ.Cossstoredenergy Ciss C[pF] 1 2 Coss Eoss[µJ] Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VDS[V] Eoss=f(VDS) Forwardcharacteristicsofreversediode IF[A] 125 C 25 C VSD[V] IF=f(VSD);parameter:Tj 1 Rev.2.2,214612

11 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11 Rev.2.2,214612

12 7PackageOutlines DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b b b c D D1 E e e1 N H L L1 øp Q (BSC) (BSC) DOCUMENT NO. Z8B3319 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE REVISION 4 5mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 12 Rev.2.2,214612

13 8AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 13 Rev.2.2,214612

14 RevisionHistory Revision:214612,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release of final data sheet Release of final datasheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14 Rev.2.2,214612

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