MOSFET IPA80R450P7. 800VCoolMOSªP7PowerTransistor

Transcription

1 MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. PGTO22FP Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thof3VandsmallestV(GS)thvariationof±.V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj=2 C 8 V RDS(on),max.4 Ω Qg,typ 24 nc ID 11 A V 2.7 µj VGS(th),typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 8R4P7 see Appendix A 1

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer

3 1Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=2 C TC=1 C Pulsed drain current 2) ID,pulse 29 A TC=2 C Avalanche energy, single pulse EAS 29 mj ID=1.8A; VDD=V Avalanche energy, repetitive EAR.22 mj ID=1.8A; VDD=V Avalanche current, repetitive IAR 1.8 A MOSFET dv/dt ruggedness dv/dt 1 V/ns VDS=to4V Gate source voltage VGS V static; AC (f>1 Hz) Power dissipation Ptot 29 W TC=2 C Operating and storage temperature Tj,Tstg 1 C Mounting torque Ncm M2. screw Continuous diode forward current IS A TC=2 C Diode pulse current 2) IS,pulse 29 A TC=2 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=to4V,ISD<=2.2A,Tj=2 C Maximum diode commutation speed 3) dif/dt A/µs VDS=to4V,ISD<=2.2A,Tj=2 C Insulation withstand voltage VISO 2 V Vrms,TC=2 C,t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.4 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6 mm (.63 in.) from case for 1s 1) TO22 equivalent. Limited by Tj max. Maximum duty cycle D=. 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 3

4 3Electricalcharacteristics attj=2 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=.22mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 1 1 µa VDS=8V,VGS=V,Tj=2 C VDS=8V,VGS=V,Tj=1 C IGSS 1 µa VGS=2V,VDS=V RDS(on) Ω VGS=1V,ID=4.A,Tj=2 C VGS=1V,ID=4.A,Tj=1 C Gate resistance RG 1 Ω f=2khz,opendrain TableDynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 77 pf VGS=V,VDS=V,f=2kHz Output capacitance Coss 14 pf VGS=V,VDS=V,f=2kHz Effective output capacitance, energy related 1) Co(er) 24 pf VGS=V,VDS=toV Effective output capacitance, time related 2) Co(tr) 3 pf ID=constant,VGS=V,VDS=toV Turnon delay time td(on) 1 ns Rise time tr 6 ns Turnoff delay time td(off) 4 ns Fall time tf 1 ns VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=64V,ID=4.A,VGS=to1V Gate to drain charge Qgd 9 nc VDD=64V,ID=4.A,VGS=to1V Gate charge total Qg 24 nc VDD=64V,ID=4.A,VGS=to1V Gate plateau voltage Vplateau 4. V VDD=64V,ID=4.A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromtoV 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromtoV 4

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=4.A,Tf=2 C Reverse recovery time trr 1 ns VR=4V,IF=2.2A,diF/dt=A/µs Reverse recovery charge Qrr 11 µc VR=4V,IF=2.2A,diF/dt=A/µs Peak reverse recovery current Irrm 17 A VR=4V,IF=2.2A,diF/dt=A/µs

6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 3 Diagram2:Safeoperatingarea µs 1 ms 1 µs 1 µs ms 2 DC Ptot[W] 2 1 ID[A] TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance ms 1 ms 1 µs 1 µs 1 µs. ID[A] DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6

7 Diagram:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 1 V 8 V 7 V 6 V V 1 V 8 V 7 V 6 V ID[A] 2 1. V ID[A] 1 1. V V 1 V 4. V 4. V VDS[V] ID=f(VDS);Tj=2 C;parameter:VGS VDS[V] ID=f(VDS);Tj=12 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 2. V. V V 6. V 7 V 1 V Diagram8:Drainsourceonstateresistance % RDS(on)[Ω] RDS(on)[Ω]. typ ID[A] RDS(on)=f(ID);Tj=12 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=4.A;VGS=1V 7

8 Diagram9:Typ.transfercharacteristics 3 Diagram1:Typ.gatecharge C V 64 V ID[A] 1 1 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=4.Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode C 12 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=1.8A;VDD=V 8

9 Diagram13:Drainsourcebreakdownvoltage 9 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] 8 C[pF] 1 1 Coss 7 1 Crss Tj[ C] VBR(DSS)=f(Tj);ID=1mA VDS[V] C=f(VDS);VGS=V;f=2kHz Diagram1:Typ.Cossstoredenergy 6 4 Eoss[µJ] VDS[V] Eoss=f(VDS) 9

10 TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 1

11 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b b b c D D1 E e e1 N H L L1 øp Q (BSC) (BSC) DOCUMENT NO. Z8B3319 SCALE 2. EUROPEAN PROJECTION 2. ISSUE DATE REVISION 6 mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 11

12 7AppendixA Table11RelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 12

13 RevisionHistory Revision:21827,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust21 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13