MOSFET IPD80R1K4P7. 800VCoolMOSªP7PowerTransistor

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1 MOSFET Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover8years pioneeringsuperjunctiontechnologyinnovation. DPAK tab Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thofVandsmallestV(GS)thvariationof±.5V IntegratedZenerDiodeESDprotection BestinclassCoolMOS qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtojedec(jstdandjesd) Fullyoptimizedportfolio Drain Pin, Tab Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin Source Pin Applications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. TableKeyPerformanceParameters Parameter Value Unit Tj=5 C 8 V RDS(on),max. Ω Qg,typ nc ID A 5V.9 µj VGS(th),typ V ESD class (HBM) Type/OrderingCode Package Marking RelatedLinks PGTO 5 8RKP7 see Appendix A Rev..,675

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev..,675

3 Maximumratings attj=5 C,unlessotherwisespecified TableMaximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ) ID.7 A TC=5 C TC= C Pulsed drain current ) ID,pulse 8.9 A TC=5 C Avalanche energy, single pulse EAS 8 mj ID=.6A; VDD=5V Avalanche energy, repetitive EAR.7 mj ID=.6A; VDD=5V Avalanche current, repetitive IAR.6 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=toV Gate source voltage VGS V static; AC (f> Hz) Power dissipation Ptot W TC=5 C Operating and storage temperature Tj,Tstg 55 5 C Continuous diode forward current IS A TC=5 C Diode pulse current ) IS,pulse 8.9 A TC=5 C Reverse diode dv/dt ) dv/dt V/ns VDS=toV,ISD<=.7A,Tj=5 C Maximum diode commutation speed ) dif/dt 5 A/µs VDS=toV,ISD<=.7A,Tj=5 C Thermalcharacteristics TableThermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC.9 C/W Thermal resistance, junction ambient RthJA 6 C/W Device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA 5 5 C/W Tsold 6 C reflow MSL Device on mm*mm*.5mm epoxy PCB FR with 6cm (one layer 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. ) Limited by Tj max. Maximum duty cycle D=.5 ) Pulse width tp limited by Tj,max ) VDClink=V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<µs Rev..,675

4 Electricalcharacteristics attj=5 C,unlessotherwisespecified TableStaticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=mA Gate threshold voltage VGS(th).5.5 V VDS=VGS,ID=.7mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS µa VDS=8V,VGS=V,Tj=5 C VDS=8V,VGS=V,Tj=5 C IGSS µa VGS=V,VDS=V RDS(on)... Ω VGS=V,ID=.A,Tj=5 C VGS=V,ID=.A,Tj=5 C Gate resistance RG.5 Ω f=5khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 5 pf VGS=V,VDS=5V,f=5kHz Output capacitance Coss 6.5 pf VGS=V,VDS=5V,f=5kHz Effective output capacitance, energy related ) Co(er) 8 pf VGS=V,VDS=to5V Effective output capacitance, time related ) Co(tr) 97 pf ID=constant,VGS=V,VDS=to5V Turnon delay time td(on) ns Rise time tr 8 ns Turnoff delay time td(off) ns Fall time tf ns VDD=V,VGS=V,ID=.A, RG=Ω VDD=V,VGS=V,ID=.A, RG=Ω VDD=V,VGS=V,ID=.A, RG=Ω VDD=V,VGS=V,ID=.A, RG=Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs nc VDD=6V,ID=.A,VGS=toV Gate to drain charge Qgd 5 nc VDD=6V,ID=.A,VGS=toV Gate charge total Qg nc VDD=6V,ID=.A,VGS=toV Gate plateau voltage Vplateau.5 V VDD=6V,ID=.A,VGS=toV ) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto5V ) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto5V Rev..,675

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=.A,Tf=5 C Reverse recovery time trr 8 ns VR=V,IF=.7A,diF/dt=5A/µs Reverse recovery charge Qrr 5 µc VR=V,IF=.7A,diF/dt=5A/µs Peak reverse recovery current Irrm 9 A VR=V,IF=.7A,diF/dt=5A/µs 5 Rev..,675

6 Electricalcharacteristicsdiagrams Diagram:Powerdissipation 5 Diagram:Safeoperatingarea 5 ms ms µs µs µs Ptot[W] 5 ID[A] DC TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=5 C;D=;parameter:tp Diagram:Safeoperatingarea Diagram:Max.transientthermalimpedance ms ms µs µs µs.5 ID[A] DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 5 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev..,675

7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V 8 V 7 V 7 6 V V 8 V 7 V 6 V 8 6 V V 5 V ID[A] V ID[A] 5 V.5 V.5 V 5 5 VDS[V] ID=f(VDS);Tj=5 C;parameter:VGS 5 5 VDS[V] ID=f(VDS);Tj=5 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance Diagram8:Drainsourceonstateresistance 6. 5 V 5.5 V 6 V 6.5 V 7 V V RDS(on)[Ω]. RDS(on)[Ω]..6 98% typ ID[A] RDS(on)=f(ID);Tj=5 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=.A;VGS=V 7 Rev..,675

8 Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge 9 5 C V 6 V ID[A] 5 5 C VGS[V] VGS[V] ID=f(VGS);VDS=V;parameter:Tj 6 8 Qgate[nC] VGS=f(Qgate);ID=.Apulsed;parameter:VDD Diagram:Forwardcharacteristicsofreversediode 5 C 5 C Diagram:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=.6A;VDD=5V 8 Rev..,675

9 Diagram:Drainsourcebreakdownvoltage 95 Diagram:Typ.capacitances 9 Ciss 85 VBR(DSS)[V] 8 C[pF] Coss 75 Crss Tj[ C] VBR(DSS)=f(Tj);ID=mA 5 VDS[V] C=f(VDS);VGS=V;f=5kHz Diagram5:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev..,675

10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g V,I (peak) R g I F di F / dt t F t rr t S I F t I F R g = R g I rrm Q F Q S di rr / dt %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D Rev..,675

11 Rev..,675 6PackageOutlines.5 REVISION 6 56 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm.5 DOCUMENT NO. Z8B8 MILLIMETERS.57 (BSC).9 (BSC) L D N H E e e E D L b A DIM b c b c A,95 MIN (BSC).9 (BSC) MAX INCHES MIN.7 MAX L FigureOutlinePGTO5,dimensionsinmm/inches

12 7AppendixA TableRelatedLinks IFXCoolMOSWebpage: IFXDesigntools: Rev..,675

13 RevisionHistory Revision:675,Rev.. Previous Revision Revision Date Subjects (major changes since last revision). 675 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C66,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust5 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 876München,Germany 6InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Rev..,675