MOSFET MetalOxideSemiconductorFieldEffectTransistor. BareDie OptiMOS 3PowerMOSTransistorChip IPC302N10N3. DataSheet. Industrial&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS 3PowerMOSTransistorChip DataSheet Rev.2.5 Final Industrial&Multimarket
2 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPB027N10N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS 100 V RDS(on) 2.7 1) mω Die size 6.7 x 4.5 mm 2 Thickness 220 µm Gate Drain Source Type/OrderingCode Package Marking RelatedLinks Chip not defined - 2ElectricalCharacteristicsonWaferLevel attj=25 C,unlessotherwisespecified Table2 Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS V VGS=0V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=302µA Zero gate voltage drain current IDSS µa VGS=0V,VDS=100V Gate-source leakage current IGSS na VGS=20V,VDS=0V Drain-source on- resistance RDS(on) ) 100 3) mω VGS=10V,ID=2.0A Reverse diode forward on-voltage VSD V VGS=0V,IF=1A Avalanche energy, single pulse EAS ) - mj ID =30 A, RGS =25 Ω 1) packaged in a P-TO263-3 (see ref. product) 2) typicalbaredierds(on);vgs=10v 3) limited by wafer test-equipment 4) Wafer tested. For general avalanche capability refer to the datasheet of IPB027N10N3 G 2
3 3PackageOutlines Figure1OutlineChip,dimensionsinµm 3
4 RevisionHistory Revision: ,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) Release Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 4
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MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,40V BSZ025N04LS. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM PowerMOSFET,V DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOS TM PowerMOSFET,V 1Description Features Optimizedforsynchronousrectification
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD90NS3LLH7 30 V 3.4 mω 80
Features. Description. AM01476v1. Table 1: Device summary Order code Marking Package Packaging STWA40N95K5 40N95K5 TO-247 Tube
STWA40N95K5 N-channel 950 V, 0.110 Ω typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STWA40N95K5 950 V 0.130 Ω 38
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R280P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R28P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6
AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is available in DFN8(3x3) Package ORDERING INFORMATION Package Type Part Number DFN8(3x3) J8R J8 SPQ: 5,000pcs/Reel J8VR V: Halogen free Package Note R: Tape & Reel AiT provides all RoHS
Features. Description. Table 1: Device summary Order code Marking Package Packing STL3NK40 3NK40 PowerFLAT 5x5 Tape and reel
STL3NK40 N-channel 400 V, 4.5 Ω typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL3NK40 400 V 5.5 Ω 0.43 A 2.5
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mω 120 A 176.5 W Very low on-resistance
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6650V 650VCoolMOS E6PowerTransistor IPD65R250E6. DataSheet. Industrial&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6650V 650VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final Industrial&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower
PIN CONFIGURATION(SOP 8P)
DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPW60R041P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS P6PowerTransistor DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower
MOSFET IPZA60R099P7. 600VCoolMOS P7PowerTransistor
MOSFET 600VCoolMOS P7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V
Features. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel
Automotive-grade N-channel 60 V, 32 mω typ., 24 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD20NF06LAG 60 V 40 mω 24 A 60 W AEC-Q101
P-channel -30 V, 0.01 Ω typ., A, STripFET H6 Power MOSFET in an SO-8 package. Features. Description
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS10P3LLH6-30 V 0.012 Ω -12.5 A Very low on-resistance
Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI. Features. Description
Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI Datasheet - production data Features Order code VDS RDS(on) max. ID STL15DN4F5 40 V 9 mω 15 A Designed
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL120N4F6AG 40 V 3.6 mω 55 A
Features. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel
N-channel 60 V, 2.4 mω typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mω 140 A 125 W Among
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL210N4F7AG 40 V 1.6 mω 120
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C7 600VCoolMOS C7PowerTransistor IPP60R099C7. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 600VCoolMOS C7PowerTransistor DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS C7isarevolutionarytechnologyforhighvoltagepower
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS CE 800VCoolMOS CEPowerTransistor IPA80R650CE. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 8VCoolMOS CEPowerTransistor DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description CoolMOS CEisarevolutionarytechnologyforhighvoltagepower
Features. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube
N-channel 100 V, 2.6 mω typ., 180 A, STripFET F7 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID 100 V 3.0 mω 180 A 1 2 3 Among the lowest RDS(on) on
SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R600P6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R6P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 6VCoolMOS P6PowerTransistor IPP6R6P6,IPA6R6P6,IPD6R6P6
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW45NM50 W45NM50 TO-247 Tube
N-channel 500 V, 0.08 Ω typ., 45 A MDmesh Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID 500 V 0.1 Ω 45 A TO-247 1 3 2 100% avalanche tested High dv/dt
STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation
Features. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6 650VCoolMOS C6PowerTransistor IPL65R650C6S. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6 650VCoolMOS C6PowerTransistor DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower
Features. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code VDS RDS(on) max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 1.4 A Very low on-resistance
Features. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel
P-channel 20 V, 0.087 Ω typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3 A SOT23-6L Very low on-resistance