MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R190C6. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.3 Final PowerManagement&Multimarket

1 Description IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

2 1 Description IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC 1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. gate pin 1 drain pin 2 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T j,max 650 V R DS(on),max 0.19! Q g,typ 63 nc I D,pulse 59 A E 400V 5.2 µj Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW60R190C6 PG-TO247 IFX C6 Product Brief IPB60R190C6 PG-TO263 IFX C6 Portfolio IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage IPP60R190C6 PG-TO220 IFX Design tools IPA60R190C6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Rev. 2.3 Page

3 Table of Contents Table of Contents 1 Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test circuits Package outlines Revision History Rev. 2.3 Page

4 600V CoolMOSTM C6 Power Transistor Maximum ratings 2 Maximum ratings at Tj = 25 C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current 1) ID A TC= 25 C 12.8 T C =100 C Pulsed drain current 2) ID,pulse A T C =25 C Avalanche energy, single pulse EAS mj ID=3.4 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR ID=3.4 A,VDD=50 V Avalanche current, repetitive IAR A MOSFET dv/dt ruggedness dv/dt V/ns V DS = V Gate source voltage VGS V static Power dissipation for TO-220, TO-247, TO-262, TO-263 Power dissipation for TO-220 FullPAK AC (f>1 Hz) Ptot W TC=25 C Ptot Operating and storage temperature Tj,Tstg C Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK Ncm M3 and M3.5 screws 50 M2.5 screws Continuous diode forward current IS A TC=25 C Diode pulse current 2) IS,pulse A TC=25 C Reverse diode dv/dt 3) dv/dt V/ns VDS= V,ISD& ID, Maximum diode dif/dt A/µs Tj=25 C commutation speed 3) (see table 22) Insulation withstand voltage TO-220 FullPAK 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse widtht p limited by Tj,max 3) Identical low side and high side switch with identical RG VISO V VRMS, T C =25 C, t = 1 min Final Data Sheet 4 Rev. 2.2, Rev. 2.3 Page

5 Thermal characteristics 3 Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 (IPB60R190C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wave- & reflow soldering allowed R thja SMD version, device on PCB, minimal footprint 35 SMD version, device on PCB, 6cm 2 cooling area 1) T sold C reflow MSL1 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev. 2.2, Rev. 2.3 Page

6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V (BR)DSS V V GS =0 V, I D =0.25 ma Gate threshold voltage V GS(th) V DS =V GS, I D =0.63mA Zero gate voltage drain current I DSS µa V DS =600 V, V GS =0 V, T j =25 C V DS =600 V, V GS =0 V, T j =150 C Gate-source leakage current I GSS na V GS =20 V, V DS =0 V Drain-source on-state resistance R DS(on) ! V GS =10 V, I D =9.5 A, T j =25 C V GS =10 V, I D =9.5 A, T j =150 C Gate resistance R G ! f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance C iss pf V GS =0 V, V DS =100 V, Output capacitance C oss f=1 MHz Effective output capacitance, energy related 1) Effective output capacitance, time related 2) C o(er) V GS =0 V, V DS = V C o(tr) I D =constant, V GS =0 V V DS = V Turn-on delay time t d(on) ns V DD =400 V, Rise time t V GS =13 V, I D =9.5A, r R G = 3.4! Turn-off delay time t d(off) (see table 20) Fall time t f - 9-1) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS 2) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS Final Data Sheet 6 Rev. 2.2, Rev. 2.3 Page

7 Electrical characteristics Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Q gs nc V DD =480 V, I D =9.5A, Gate to drain charge Q gd V GS =0 to 10 V Gate charge total Q g Gate plateau voltage V plateau V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage V SD V V GS =0 V, I F =9.5A, T j =25 C Reverse recovery time t rr ns V R =400 V, I F =9.5A, Reverse recovery charge Q di F /dt=100 A/µs rr µc (see table 22) Peak reverse recovery current I rrm A Final Data Sheet 7 Rev. 2.2, Rev. 2.3 Page

transient thermal impedance TO-220, TO-247, TO-262, TO-263 Max.

8 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 10 Power dissipation TO-220, TO-247, TO-262, TO-263 Power dissipation TO-220 FullPAK P tot = f(t C ) P tot = f(t C ) Table 11 Max. transient thermal impedance TO-220, TO-247, TO-262, TO-263 Max. transient thermal impedance TO-220 FullPAK Z (thjc) =f(tp); parameter: D=t p /T Z (thjc) =f(tp); parameter: D=t p /T Final Data Sheet 8 Rev. 2.2, Rev. 2.3 Page

Electrical characteristics diagrams Table 12 Safe operating

area T C =25 C TO-220 FullPAK I D =f(v DS ); T C =25 C; D=0;

TO-247, TO-262, TO-263 I D =f(v DS ); T C =25 C; D=0; parameter

T C =80 C; D=0; parameter t p I D =f(v DS ); T C =80 C; D=0;

9 Electrical characteristics diagrams Table 12 Safe operating area T C =25 C TO-220, TO-247, TO-262, TO-263 Safe operating area T C =25 C TO-220 FullPAK I D =f(v DS ); T C =25 C; D=0; parameter t p Table 13 Safe operating area T C =80 C TO-220, TO-247, TO-262, TO-263 I D =f(v DS ); T C =25 C; D=0; parameter t p Safe operating area T C =80 C TO-220 FullPAK I D =f(v DS ); T C =80 C; D=0; parameter t p I D =f(v DS ); T C =80 C; D=0; parameter t p Final Data Sheet 9 Rev. 2.2, Rev. 2.3 Page

drain-source on-state resistance I D =f(v DS ); T j =125 C; parameter: V GS Drain-source on-state resistance R

10 Electrical characteristics diagrams Table 14 Typ. output characteristics T C =25 C Typ. output characteristics T j =125 C I D =f(v DS ); T j =25 C; parameter: V GS Table 15 Typ. drain-source on-state resistance I D =f(v DS ); T j =125 C; parameter: V GS Drain-source on-state resistance R DS(on) =f(i D ); T j =125 C; parameter: V GS R DS(on) =f(t j ); I D =9.5 A; V GS =10 V Final Data Sheet 10 Rev. 2.2, Rev. 2.3 Page

Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge I D =f(v GS ); V DS =20V Table 17 Avalanche energy V GS =f(q gate ), I D =9.

11 Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge I D =f(v GS ); V DS =20V Table 17 Avalanche energy V GS =f(q gate ), I D =9.5A pulsed Drain-source breakdown voltage E AS =f(t j ); I D =3.4 A; V DD =50 V V BR(DSS) =f(t j ); I D =0.25 ma Final Data Sheet 11 Rev. 2.2, Rev. 2.3 Page

Table 19 Forward characteristics of reverse diode I F =f(v SD );

12 Electrical characteristics diagrams Table 18 Typ. capacitances Typ. C oss stored energy C=f(V DS ); V GS =0 V; f=1 MHz E OSS =f(v DS ) Table 19 Forward characteristics of reverse diode I F =f(v SD ); parameter: T j Final Data Sheet 12 Rev. 2.2, Rev. 2.3 Page

13 Test circuits 6 Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V D V DS V DS I D Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform R G1 I D # /# #/ $ ) $ 00 ( $. " $ )! 00 (!. "! ) $ 00 V DS ) $. $ ) R G2 --,!.! ) /# 00 #/ $ %$! --, $ " --, '$! --, R G1 = R G2.*+$$$&& Final Data Sheet 13 Rev. 2.2, Rev. 2.3 Page

14 Package outlines 7 Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 14 Rev. 2.2, Rev. 2.3 Page

15 Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 15 Rev. 2.2, Rev. 2.3 Page

16 6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J190= MILLIMETERS DIMENSIONS MIN. MAX. DOCUMENT NO. A Z8B A A REVISION b b b SCALE 5:1 b mm b c D D EUROPEAN PROJECTION E e 2.54 H L L1 øp ISSUE DATE Q Figure 3 Outline PG TO 220 FullPAK dimensions in mm >X]P[ <PcP KWTTc +6 JTe(,(,&,*+.'12'02 Rev. 2.3 Page

17 Package outlines Figure 4 Outlines TO-262, dimensions in mm/inches Final Data Sheet 17 Rev. 2.2, Rev. 2.3 Page

18 )$$4 +AA>./2H +) 0AF8B -0G)$1%*$+) 056=598 ( 3/"&)'! <@??#<@6;8C *02-1 )-3-,/..3 %' +.4# Rev. &#%! 2.2, &$"$&"$( Rev. 2.3 Page

19 600VCoolMOSªC6PowerTransistor RevisionHistory Revision: ,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) Release of final data sheet PG-TO220 FullPAK package outline update (creation: ) Outline PG-TO220 FullPAK update TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 19 Rev.2.3,

MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R600E6. DataSheet. PowerManagement&Multimarket

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS"