MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R950C6. DataSheet. PowerManagement&Multimarket

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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket

2 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Qualified for industrial grade applications according to JEDEC 1) Pb-free plating, Halogen free mold compound gate pin 1 drain pin 2 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T j,max 650 V R DS(on),max 0.95 " Q g,typ 13 nc I D,pulse 12 A E 400V 1.3 µj Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPD60R950C6 PG-TO252!IFX C6 Product Brief IPB60R950C6 PG-TO263!IFX C6 Portfolio IPP60R950C6 PG-TO220 6R950C6!IFX CoolMOS Webpage IPA60R950C6 PG-TO220 FullPAK!IFX Design tools 1) J-STD20 and JESD22 FinalData Sheet 2 Rev. 2.2,

3 Table of Contents Table of Contents Description Table of Contents Maximum Ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test circuits Package outlines Revision History FinalData Sheet 3 Rev. 2.2,

4 Maximum Ratings 2 Maximum Ratings at T j = 25 C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Continuous drain current 1) Pulsed drain current 2) 1) Limited by T j,max. Maximum duty cycle D=0.75 2) Pulse width t p limited by T j,max 3) Identical low side and high side switch with identical R G Min. Typ. Max. I D A T C = 25 C 2.8 T C = 100 C I D,pulse A T C =25 C Avalanche energy, single pulse E AS mj I D =0.8 A,V DD =50 V (see table 21) Avalanche energy, repetitive E AR I D =0.8 A,V DD =50 V Avalanche current, repetitive I AR A MOSFET dv/dt ruggedness dv/dt V/ns V DS = V Gate source voltage V GS V static Power dissipation for TO-220, TO-252, TO-263 Power dissipation for TO-220 FullPAK AC (f>1 Hz) P tot W T C =25 C P tot W T C =25 C Operating and storage temperature T j,t stg C Mounting torque TO Ncm M3 and M3.5 screws TO-220FP 50 M2.5 screws Continuous diode forward current I S A T C =25 C Diode pulse current 2) I S,pulse A T C =25 C Reverse diode dv/dt 3) dv/dt V/ns V DS = V, I SD # I D, T j =125 C Maximum diode commutation di f /dt 500 A/µs (see table 22) speed 3) FinalData Sheet 4 Rev. 2.2,

5 Thermal characteristics 3 Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP60R950C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R950C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thja leaded T sold C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 (IPB60R950C6),TO-252 (IPD60R950C6) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient Soldering temperature, wave- & reflowsoldering allowed R thja SMD version, device on PCB, minimal footprint 35 SMD version, device on PCB, 6cm 2 cooling area 1) T sold C reflow MSL1 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling FinalData Sheet 5 Rev. 2.2,

6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 C, unless otherwise specified Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V (BR)DSS V V GS =0 V, I D =0.25 ma Gate threshold voltage V GS(th) V DS =V GS, I D =0.13 ma Zero gate voltage drain current I DSS µa V DS =600 V, V GS =0 V, T j =25 C V DS =600 V, V GS =0 V, T j =150 C Gate-source leakage current I GSS na V GS =20 V, V DS =0 V Drain-source on-state resistance R DS(on) " V GS =10 V, I D =1.5 A, T j =25 C V GS =10 V, I D =1.5 A, T j =150 C Gate resistance R G " f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance C iss pf V GS =0 V, V DS =100 V, Output capacitance C oss f=1 MHz Effective output capacitance, energy related 1) Effective output capacitance, time related 2) C o(er) V GS =0 V, V DS = V C o(tr) I D =constant, V GS =0 V V DS = V Turn-on delay time t d(on) ns V DD =400 V, Rise time t V GS =10 V, I D =1.9A, r R G = 12.2 " Turn-off delay time t d(off) (see table 20) Fall time t f ) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS 2) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS FinalData Sheet 6 Rev. 2.2,

7 Electrical characteristics Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. IGate to source charge Q gs nc V DD =480 V, I D =1.9 A, Gate to drain charge Q gd V GS =0 to 10 V Gate charge total Q g Gate plateau voltage V plateau V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage V SD V V GS =0 V, I F =1.9 A, T j =25 C Reverse recovery time t rr ns V R =400 V, I F =1.9 A, Reverse recovery charge Q di F /dt=100 A/µs rr µc (see table 22) Peak reverse recovery current I rrm A FinalData Sheet 7 Rev. 2.2,

transient thermal impedance TO-220, TO-252, TO-263 Max.

8 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 10 Power dissipation TO-220, TO-252, TO-263 Power dissipation TO-220 FullPAK P tot = f(t C ) P tot = f(t C ) Table 11 Max. transient thermal impedance TO-220, TO-252, TO-263 Max. transient thermal impedance TO-220 FullPAK Z (thjc) =f(tp); parameter: D=t p /T Z (thjc) =f(tp); parameter: D=t p /T FinalData Sheet 8 Rev. 2.2,

Electrical characteristics diagrams Table 12 Safe

operating area T C =25 C TO-220 FullPAK I D =f(v DS ); T C

=80 C TO-220, TO-252, TO-263 I D =f(v DS ); T C =25 C;

FullPAK I D =f(v DS ); T C =80 C; D=0; parameter t p I D

9 Electrical characteristics diagrams Table 12 Safe operating area T C =25 C TO-220, TO-252, TO-263 Safe operating area T C =25 C TO-220 FullPAK I D =f(v DS ); T C =25 C; D=0; parameter t p Table 13 Safe operating area T C =80 C TO-220, TO-252, TO-263 I D =f(v DS ); T C =25 C; D=0; parameter t p Safe operating area T C =80 C TO-220 FullPAK I D =f(v DS ); T C =80 C; D=0; parameter t p I D =f(v DS ); T C =80 C; D=0; parameter t p FinalData Sheet 9 Rev. 2.2,

Table 14 600V CoolMOS C6 Power Transistor Electrical characteristics diagrams Typ. output characteristics T j =25 C Typ.

10 Table V CoolMOS C6 Power Transistor Electrical characteristics diagrams Typ. output characteristics T j =25 C Typ. output characteristics T j =125 C I D =f(v DS ); T j =25 C; parameter: V GS Table 15 Typ. drain-source on-state resistance I D =f(v DS ); T j =125 C; parameter: V GS Drain-source on-state resistance R DS(on) =f(i D ); T j =125 C; parameter: V GS R DS(on) =f(t j ); I D =1.5A; V GS =10 V FinalData Sheet 10 Rev. 2.2,

11 Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge I D =f(v GS ); V DS =20V Table 17 Avalanche energy V GS =f(q gate ), I D =1.9A pulsed Drain-source breakdown voltage E AS =f(t j ); I D =0.8A; V DD =50 V V BR(DSS) =f(t j ); I D =0.25 ma FinalData Sheet 11 Rev. 2.2,

12 Electrical characteristics diagrams Table 18 Typ. capacitances Typ. C oss stored energy C=f(V DS ); V GS =0 V; f=1 MHz E OSS =f(v DS ) Table 19 Forward characteristics of reverse diode I F =f(v SD ); parameter: T j FinalData Sheet 12 Rev. 2.2,

13 Test circuits 6 Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V D V DS V DS I D Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform R G1 I D )@% 4 % LL 1 % ; % % 4 " LL 1" ; % " 4 V DS 4 % LL %; % 4 R G2 998 " ; " $ LL )@% +*" 998 % # 998 0*" 998 R G1 = R G2 ;57***// FinalData Sheet 13 Rev. 2.2,

14 Package outlines 7 Package outlines Figure 1 Outlines TO-252, dimensions in mm/inches FinalData Sheet 14 Rev. 2.2,

15 Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches FinalData Sheet 15 Rev. 2.2,

16 6**M =^^[FGKm C6 H^fTa LaP]bXbc^a IP(%!'95!C% ),/ /,..,/*6*45,0(+*5 MIN MAX MIN MAX ' '# '$ # $ % & ; ) )# * = =# (BSC) (BSC) )1(7/*06 01" Z8B ('.* 2.5 *7412*'0 241-*(6, ,557* )'6* *8,5, mm ;XVc`T! Dcb[X]T E<%HD **( ;c[[e5@$ SX\T]aX^]a X] \\'X]RWTa Final Data Sheet +6 Rev. 2.2, 2.5,

17 Package outlines Figure 4 Outlines TO-263, dimensions in mm/inches FinalData Sheet 17 Rev. 2.2,

18 600VCoolMOS C6PowerTransistor RevisionHistory Revision: ,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release of final Data sheet PG-TO220 FullPAK package outline update (creation: ) WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 18 Rev.2.2,

MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R600E6. DataSheet. PowerManagement&Multimarket

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS"