MOSFET IPT059N15N3. OptiMOS ª 3Power-Transistor,150V
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1 MOSFET OptiMOS ª 3PowerTransistor,15V Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Idealforhighfrequencyswitchingandsynchronousrectification HalogenfreeaccordingtoIEC HSOF Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 15 V RDS(on),max 5.9 mω ID 155 A Gate Pin 1 Drain Tab Source Pin 28 Type/OrderingCode Package Marking RelatedLinks PGHSOF8 59N15N3 1) JSTD2 and JESD22 1
2 OptiMOS ª 3PowerTransistor,15V TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer
3 OptiMOS ª 3PowerTransistor,15V 1Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID A TC=25 C TC=1 C Pulsed drain current 1) ID,pulse 62 A TC=25 C Avalanche energy, single pulse EAS 52 mj ID=15A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 375 W TC=25 C Operating and storage temperature Tj,Tstg C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case RthJC.2.4 K/W Thermal resistance, junction ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction ambient, 6 cm2 cooling area 2) RthJA 4 K/W 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 15 V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=27µA Zero gate voltage drain current IDSS µa VDS=12V,VGS=V,Tj=25 C VDS=12V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG Ω mω VGS=1V,ID=15A VGS=8V,ID=75A Transconductance gfs S VDS >2 ID RDS(on)max,ID=15A 1) See figure 3 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3
4 OptiMOS ª 3PowerTransistor,15V Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance Ciss pf VGS=V,VDS=75V,f=1MHz Output capacitance Coss pf VGS=V,VDS=75V,f=1MHz Reverse transfer capacitance Crss 1 19 pf VGS=V,VDS=75V,f=1MHz Turnon delay time td(on) 25 ns Rise time tr 35 ns Turnoff delay time td(off) 46 ns Fall time tf 14 ns VDD=75V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=75V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=75V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=75V,VGS=1V,ID=1A, RG,ext=1.6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 29 nc VDD=75V,ID=1A,VGS=to1V Gate to drain charge Qgd 11 nc VDD=75V,ID=1A,VGS=to1V Switching charge Qsw 24 nc VDD=75V,ID=1A,VGS=to1V Gate charge total Qg nc VDD=75V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=75V,ID=1A,VGS=to1V Output charge Qoss 178 nc VDD=75V,VGS=V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 155 A TC=25 C Diode pulse current IS,pulse 62 A TC=25 C Diode forward voltage VSD V VGS=V,IF=15A,Tj=25 C Reverse recovery time trr ns VR=75V,IF=IS,diF/dt=1A/µs Reverse recovery charge Qrr 478 nc VR=75V,IF=IS,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition 4
5 OptiMOS ª 3PowerTransistor,15V 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 4 Diagram2:Draincurrent Ptot[W] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea µs Diagram4:Max.transientthermalimpedance 1 1 µs µs 1 ms DC 1 ms ZthJC[K/W] VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 single pulse tp[s] ZthJC=f(tp);parameter:D=tp/T 5
6 OptiMOS ª 3PowerTransistor,15V Diagram5:Typ.outputcharacteristics 35 1 V 8 V Diagram6:Typ.drainsourceonresistance V V 6.5 V 12 5 V 5.5 V V 5.5 V RDS(on)[mΩ] V 8 V 1 V 5 5 V 4.5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 2 Diagram8:Typ.forwardtransconductance gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj gfs=f(id);tj=25 C 6
7 OptiMOS ª 3PowerTransistor,15V Diagram9:Drainsourceonstateresistance 2 Diagram1:Typ.gatethresholdvoltage µa µa RDS(on)[mΩ] 1 98% VGS(th)[V] typ Tj[ C] RDS(on)=f(Tj);ID=15A;VGS=1V Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss C 175 C 25 C, 98% 175 C, 98% 1 3 Coss 1 2 C[pF] 1 2 IF[A] 1 1 Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 7
8 OptiMOS ª 3PowerTransistor,15V Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge V C 6 3 V 75 V IAS[A] 125 C 1 C VGS[V] tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 17 Gate charge waveforms VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8
9 OptiMOS ª 3PowerTransistor,15V 5PackageOutlines 1) partially covered with Mold Flash DIM MILLIMETERS INCHES MIN MAX MIN MAX A b b b c D D2 E E1 E4 E5 e H H (BSC).47 (BSC) H H H N 8 8 K L L L L DOCUMENT NO. Z8B SCALE 2 2 4mm EUROPEAN PROJECTION ISSUE DATE REVISION 2 Figure1OutlinePGHSOF8 9
10 OptiMOS ª 3PowerTransistor,15V RevisionHistory Revision:217516,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Insert aditional typ value (Rthjc) and max values (Crss,trr, Rg,Qg, Coss, Ciss) Update Zth Diagram and "T" condition in "Maximum ratings" TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 217InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1
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