TELECOM PARISTECH P o h toni n qu q e u e s ur u s ilicium u m : un u e n e n o n uv u e v l e le

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1 TELECOM PARISTECH Photonique sur silicium : une nouvelle plateforme d intégration photonique Guang-Hua DUAN 12 Dec III-V Lab, a joint lab of 'Alcatel-Lucent Bell Labs France', 'Thales Research and Technology' and 'CEA Leti', Campus Polytechnique, 1, Avenue A. Fresnel, Palaiseau cedex, France.

2 Outline Motivation Photonic integrated circuits on silicon for optical communications Comparison of InPPICs and silicon PICs Current state of art of silicon photonics Hybrid III-V/Si integration technology Hybrid integration technology Hybrid III-V/Si lasers Integrated tunable laser- Mach-Zehnder modulator Future directions Page 2

3 Electronic integration: Moore s law Page 3

4 Photonic Integrated Circuits 100 Gb/s Transmit 100Gb/s Transmit 100Gb/s Receive 100 Gb/s Receive Courtery from Infinera

5 PIC: an on-going (r)evolution Photonic Integration Small footprint Cost effective Reduced power consumption

6 PIC for QPSK transmitter Infinera s QPSK transmitter: PM DFB Nested MZM Bell Lab s QPSK/QAM Source Integration of tunable laser and Electro-absorption Modulators I. Kang, Optics Express 2007 Page 6

7 Roadmap of Infinera s PICs 100 elements 40 elements 40 elements From R. Dodd, Infinera Page 7

8 Photonic integrated circuits on silicon CMOS EIC platform on silicon Mature industrial process with high yield Foundry model for cost-effective industrial production Cost-effective for large volume PICs on silicon Taking benefit for EICs: industrial tools, foundry models, etc. Co-integration with CMOS electronics, close proximity between signal processing unit and photonic elements Providing optical interconnect solutions for More than Moore for EICs Can silicon be a Photonic integration plateform?

9 The building blocks Optical modulator Photodetector MUX & DEMUX Waveguide Laser source Grating coupler In-plane coupler Optical switch

10 I/O & waveguides Waveguides Transitions Splitters MMI Resonators AWG onoc Slow wave structure Edge coupling with inverted taper: <1dB losses

11 Germanium photodetectors ~ 90 GHz 15 GHz 40 GHz AWG 400GHz P (dbm) Lambda (nm) Voie 1 Voie 2 Voie 3 Voie 4 Voie 5 Voie 6 Voie 7 Voie 8 Eye 40Gbps From L. Vivian, IEF

12 Carrier depletion modulators 40Gb/s demonstrated with 10dB extinction ratio Tradeoff between losses, power consumption and extinction ratio From D. Morris, IEF

13 Impossible d'afficher l'image. Votre ordinateur manque peut-être de mémoire pour ouvrir l'image ou l'image est endommagée. Redémarrez l'ordinateur, puis ouvrez à nouveau le fichier. Si le x rouge est toujours affiché, vous devrez peut-être supprimer l'image avant de la réinsérer. Wafer level testing

14 Photonic Integration : InPvsSi Photonics Platforms Functionality Performance Footprint InP platform (III-V Lab) Source, Detector, Waveguide, Modulator Excellent optical performance No large scale integration with electronics Large for passive elements (AWG, ring resonators, etc) Si-photonics platform (III-V Lab, CEA, LETI) Detector, Waveguide, Modulator Massive electronic integration No source: need for InP heterointegration or Ge sources Good optical performance Large scale integration with electronics for free Compact for passive elements (AWG, ring resonators, etc) Cost Power consumption Higher due to individual device testing, Low yield for PICs Low for electro-absorption modulator, higher for Mach-Zehnder type modulator Wafer scale testing CMOS processing & monitoring for free Foundry model for volume production will drive cost down Novel modulator design results in low drive voltage

15 Our Vision on Silicon PICs Silicon photonics approach: Mature CMOS fabrication process Available key building blocks: modulators, detectors, low loss passive waveguides, wavelength multiplexers/demultiplexers Lack of efficient lasers sources on silicon Sources for silicon photonics Geon silicon lasers and Epitaxyof III-V layers on silicon through a buffer layers: very promising results, but still requiring developments Hybrid III-V/Si integration using wafer bodning: most efficient solution today Hybrid III-V/Si integration combing advantages of III-V and Si III-V: providing optical gain Si: providing wavelength selection and tuning using passive silicon waveguides Dies to wafer or wafer to wafer bonding proven to be a reliable process for SOI wafers => a new classeof tunablelasers with large tuning range, high SMSR and compact size = > PIC transmitter integrating tunablelasers and silicon modulators Page 15

16 Heterogeneous integration Growth of the III- V wafers III-V die or wafer bonding on SOI (unprocessed) InP substrate removal Processing of SOI wafers (modulators, detectors, passive waveguides, etc.) Processing of III-V dies/wafer Metallization of lasers, modulators and detectors

17 Bonded III-V wafers/dies on SOI Wafer to wafer bonding Dies to wafer bonding Page 17

18 Bonding of III-V dies on SOI wafer III-V dies SiO2 BOX Si waveguide

19 Laser cutting of 8 wafers into 3 wafers, ready to be processed in a III-V foundry Processing of III-V lasers on silicon

20 Tunablelasers with 45 nm tuning range Heater/Ring resonator 2 Gain section Heater/Ring resonator 1 Grating coupler A. Le Liepvre, et al., GFP Conference, Aug. 2012

21 SiliconRacetrackring ring resonator Lowlossin waveguidesand bends 90 Turn: 0.01 db lossfor 5µm radius High finesse (> 10) ring/racetracks resonators in Si with FSR around 5nm Measured transmission of two ring resonators used in the laser Si Racetrack resonator

22 Main Laser CW Characteristics Threshold : 22mA, maximum total output power 10 dbm Single-mode operation with SMSR > 40 db Series resistance : 5-6 Ω 0 Power coupled in fibre (dbm) Wavelength (nm) Laser spectrum for I=80mA, T=20 C Page 22

23 Wavelength tuning curves Power (dbm) Wavelength (nm) Laser wavelength (nm) P1=0mW P1=27mW P1=55mW P1=79mW P1=100mW P1=123mW P1=149mW P1=173mW P1=194mW R2 heating power P2(mW) 45 nm tuning range with SMSR > 40 db over the tuning range More robust single mode operation than InP based tunable lasers Page 23

24 Tunable transmitter and local oscillator in a coherent receiver Line Terminal (OLT) Tunable laser 112 Gbit/s PDM-QPSK Tx Network Unit (ONU) λ under test CW laser λ 1. λ Gbit/s PDM-QPSK Tx Potentially Integrated ONU Offline processing VOA Coherent Rx BM-Rx EDFA SMF VOA CW TL DM TL EDFA G. De Valicourt, et al., ECOC post-deadline paper Data (upstream)

25 Coherent colorless Optical network unit [1] C. R. Doerr et al., Proc. OFC 09, PDPB2 (2009). Potentially Integrated ONU Coherent Rx CW TL DM TL VOA EDFA (for this experiment)

26 Hybrid III-V/silicon lasers Laser 1 : Upstream transmitter Output 1 : grating coupler Ring resonators 1 Gain Section 1 Laser 2 : Downstream local oscillator Ring resonators 2 Gain Section 2 Coherent Rx CW TL DM TL Ring resonators 1 Lensed optical fiber Ring resonators 2 Output 2 : grating coupler

27 Directly modulated tunable hybrid laser -1 Back-to-Back 25 Km 10 Gbit/s OOK burst mode operation 200 ns -2 Log(BER) Received optical power (dbm) 5 µs Less than 2.5 db of sensibility penalty after 25 km Dynamic small reconfiguration ± 0.7 db wavelength dependence of client of the sensitivity connections across the C-band with joint flexibility Limited in optical time budget and wavelength (P out laser = -5dBm) domains Could be reduced by using more advanced coupling structure and new laser design (actual coupling loss:~8db)

28 Coherent receiver using the hybrid laser as local oscillator 100 Gbit/s PDM-QPSK signal Log(BER) Reference laser Back-to-back 25 km 100 km Spectral linewidth of 2.3 MHz Compatible with 112 Gbit/s PDM- QPSK signal for coherent detection Received optical power (dbm) Power sensitivity of -27 dbm in BER = 10-3 No penalty compared to the reference laser (ECL) No further penalty after transmission Digital dispersion compensation in the receiver -5-6

29 WDM operation over the C-band Sen nsitivity penalty BER = 1e G H z 50 G H z 0,4 0,2 0,0 1549, , ,52 B-t-B 100 km W avelength (nm ) Sensitivity penalties with respect to the ECL Less than 1 db channel-to-channel sensitivity across the C-band Consecutive wavelengths on the 50-GHz ITU grid

30 Sen nsitivity penalty BER = 1e WDM operation with co-propagating channels Downstream channel 3 ch. 5 ch. 9 ch. Local Oscillator 80 ch Number of channel Number of neighboring channels up to a worst case of 80 (50 GHz) Possibility of filterless operation

31 Wavelength selectable laser Wavelength selectable source : Si AWG insidethe laser cavityas a filter Broadband bragg reflectors for feedback Si AWG : 5 channels, 400GHz spacing Vertical bragggratingsfor on wafer scale testing Simple wavelength tuning for access networks Can also be used as multiwavelength source Page 31

32 Wavelengthselectablelaser laser : spectrum Spectrum for each channel with 110mA injection Single mode operationwith> 30 db SMSR 390GHz spacing between channels 0 Power coupled to fibre (dbm) Wavelength (nm) Power coupled in fibr re (dbm) L5 I=110mA L4 I=110mA -30 L3 I=110mA L2 I=110mA -40 L1 I=110mA Wavelength (nm) Spectrum for each channel Page 32

33 Tunable transmitter chip Back Bragg reflector III-V waveguide Hybrid III-V/Si laser Front Bragg reflector Silicon MZ modulator Output waveguide Laser Ring resonator Mach-Zehnder Modulator G. H. Duan, et al., ECOC 2012 Page 33

34 Wavelength tunability over 9 nm Waveleng gth (nm) λ7 λ λ λ λ4 λ λ λ Heating power (mw) Power lev vel (dbm) -30 λ1-40 λ2 λ λ4 λ5 λ6-70 λ7-80 λ Wavelength (nm)

35 Si MachZehnder modulator 0 Modulation res sponse (db) V -2 V -4 V -6 V 3 db modulation bandwidth around 13 GHz Modulation frequency (GHz) Page 35

36 BER and eye diagrammeat at 10 Gb/s Log(B BER) Ref. λ1 λ2 λ3 λ4 λ5 λ6 λ7 λ Received Power (dbm) λ1 λ3 λ5 λ7 λ2 λ4 λ6 λ8 Page 36

37 State of the art on hybrid III-V/Si lasers III-V Lab LETI Intel/UCSB Monolithic InP lasers Type Si FP Si RRs Si DBR Si DBR Si DFB Si DBR DFB SG DBR Silicon waveguide thickness (nm) / / Ith (ma) at 20 C < 20 < 20 η (mw/ma) at 20 C > 0.25 > 0.25 Pmax (mw) at 20 C SMSR (db) / 45 >20 / Tunability (nm) / 45 / / / / / 40 T max operation 60 C 60 C 60 C 90 C 50 C 45 C 90 C 90 C Wavelength (µm) Page 37

38 Intel s4x12.5 Gb/s transceiver

39 Luxterra sactive Optical Cables Luxtera technology for transceiver Freescale SC Hip7 0.13µm SOI CMOS process Customized SOI & CMOS 130nm technology Proprietary library for electronic design Flip chip laser die bonding Si lateral depletion modulator 10Gb/s Ge photodetectors 20GHz Surface holographic gratings fiber coupling 4x28 Gb/s using 4 parallel links Luxtera and STMicroelectronics to Enable High- Volume Silicon Photonics Solutions Collaboration between two leading companies will bring silicon photonics into mainstream markets March 1 st, Juin 2011 Page 39

40 Technology roadmap Demonstrators 4x25G Active optical cable 4x40G Active optical cable 2 Tb/s WDM transceivesr Optical Network on Chip Design & integration Photonic PDK Photonic Electronic integration Photonic IP libraries Complete Design flow Building blocks Avalanche photodiode High temperature laser Low power 40G modulator Plasmonic s

41 La chaine de la valeur en photonique silicium Materiaux Equipements Design Simulation Fonderies Integrateurs, Fabless End-users Soitec IQE Replisaurus/SET EVG Agilent Cascade PhoeniX Mentor Graphics Cadence Dolphin integration ARM ST ALTIS LFoundry Globalfoundries Intel IBM ST 3S Photonics OCLARO DAS Photonics Caliopa Intel, IBM, HP, Oracle Finisar, PMC-Sierra Altera Luxtera, Kotura, Genalyte Aurrion Skorpious Bull Tyco Electronics IBM Alcatel-Lucent Thales FCI Radiall Ericsson Nokia Oracle Google Cisco New start-ups?

42 Acknowledgements European projects: HELIOS, Plat4M, Fabulous French national projects: ANR MICROS (coherent receiver) ANR SILVER (transceiver for access networks) III-V Lab: C. Jany, A. Le Liepvre, M. Lamponi, A. Accard, F. Poingt, D. Make, F. Lelarge, G. Levaufre, N. Girard CEA: S. Messaoudene, D. Bordel, and J.-M. Fedeli, C Kopp, B. Ben Bakir, L. Fulbert Photonics Research Group, INTEC, Ghent University-IMEC S. Keyvaninia, G. Roelkens, D. Van Thourhout School of Electronics and Computer Science, University of Southampton D. J. Thomson, F. Y. Gardesand G. T. Reed Page 42