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1 Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics B. G. Lee, J. Van Campenhout, A. V. Rylyakov, C. L. Schow, W. M. J. Green, S. Assefa, M. Yang, F. E. Doany, C. V. Jahnes, R. A. John, J. A. Kash, Y. A. Vlasov IBM T. J. Watson Research Center 2010 IBM Corporation
2 Outline Conference on Lasers and Electro-Optics May 2010 San Jose, CA Optical Interconnects for Computercom Current Status & Future Technologies Optics at the Chip Integration Platform Targeting Monolithically Integrated CMOS + Photonics Initially Demonstrating Hybrid Integration Components Broadband Photonic Switch Digital CMOS Driver Integrated Switch & Driver 2 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
3 Evolution of Optical Interconnects Time of Commercial Deployment (Copper Displacement): 1980 s 1990 s 2000 s WAN, MAN metro,long-haul LAN campus, enterprise System intra/inter-rack > 2011 Board module-module Module chip-chip Chip on-chip buses Distance Cost ($/Gb/s) Power (mw/gb/s) Density (Gb/s/mm 2 ) 10 s 100 s km 100 m 2 km < 10 m intra < 100 m inter < 1 m < 10 cm < 2 cm # of lines 10 s 100 s 1k s 10k s 100k s 1M s Integration required to meet cost, power, and density targets. Includes WDM and chip-level optical switching Telecom Datacom Computercom 3 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
4 Computercom Copper Displacement Current System Implementations IBM Blue Waters (2011) IBM Roadrunner (2008) Fiber to the Rack 50,000 optical links micropod TM parallel optical TX/RX [M. Fields, Avago, OFC 2010, paper OTuP1] Fiber to the Module 1,000,000 optical links Hub/switch module, with IC and 56 micropods Node Drawer Active optical cables plugged into back of switch rack [A. Benner, IBM, OFC 2010, paper OTuH1] 4 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
5 Computercom Copper Displacement Potential Technologies for Increased Integration Terabus Program (Optics on the PCB) 0.5 Tb/s bisectional BW [F. Doany et al., T. Adv. Packaging 2009] Advanced Photonic Switch Program (Optics at the Chip) Targets Monolithic CMOS + Photonics in 3D Integrated Stack 3D Chip Stack: (top) optical NoC, (center) memory layer, (bottom) processing cores 5 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
6 Considerations for Photonic Switch Design Metrics for System Scalability Insertion loss Optical crosstalk Footprint Targets Power/energy consumption Metrics for System Bandwidth Spectral bandwidth Transition speed Metrics for Practical Considerations Temperature dependence Solutions Forward-biased PIN diode Surface-passivated waveguides for enhanced carrier lifetimes Wavelength-insensitive Mach-Zehnder 50 µm 6 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
7 WIMZ Provides Large Bandwidth & Low Crosstalk with CMOS-Compatible Drive Voltage Measured with TE-polarized broadband LED and OSA Normalized to total OFF-state power in both outputs transmittance (db) V ON = 1 V I ON = 3.5 ma T = 23 C Reference MZ 110 nm wavelength (µm) 30 nm -18 db [Van Campenhout et al., Opt. Exp. 17(26) 2009] T 11 T 12 0 V 1 V 7 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
8 WIMZ Provides Large Bandwidth & Low Crosstalk with CMOS-Compatible Drive Voltage Measured with TE-polarized broadband LED and OSA Normalized to total OFF-state power in both outputs transmittance (db) V ON = 1 V I ON = 3.5 ma T = 23 C WIMZ 110 nm wavelength (µm) -18 db [Van Campenhout et al., Opt. Exp. 17(26) 2009] BW (nm) T 11 T 12 XT (db) XT OFF 0 V 1 V XT ON (db) IL ON (db) WIMZ MZ CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
9 WIMZ Bandwidth & Crosstalk Maintained For Both Input Ports and Over Large Temperature Range T = 23 C T = 30 C T 11 T 12 T = 50 C Temperature T 21 T 22 Performance maintained over > 25 C temperature variation [J. Van Campenhout et al., Optics Express 17(26) 2009] 9 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
10 Considerations for CMOS Driver R SERIES I(Q) C(Q) Forward-Biased PIN Diode Modeled by Capacitor Carrier Lifetime is Key Trade-off between switching speed and static power consumption Low Series Resistance Due to long device with large contact area Optimum Driver: Ideal Voltage Source Low source impedance Supplies whatever current is necessary to produce required output voltage Can Be Well-Approximated by Properly Designed CMOS Inverter 10 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
11 Custom Driver Circuit in Standard Digital 90-nm Bulk CMOS pmos (W/L): 83 µm / 90 nm 166 µm / 90 nm 1331 µm / 90 nm Ω nmos (W/L): 32 µm / 90 nm 64 µm / 90 nm 512 µm / 90 nm 11 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
12 Custom Driver Circuit in Standard Digital 90-nm Bulk CMOS Input Voltage (V IN ) 50 Ω Preamp Supply (V PA ) Output Stage Supply (V OS ) CMOS Switching Performance 2 Gb/s PRBS into 50 Ωload (200 ps/div) (200 mv/div) V PA = V OS = 0.8 V V PA = V OS = 1.2 V V PA = V OS = 1.6 V 12 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
13 Interim Value of Hybrid Integration Monolithic Integration Achieves: Power and area reductions Simplified assembly Improved yield Lower cost Complex process development required Hybrid Integration Can Be Valuable Tool Shortens iterative design loop Allows co-design of photonic and electronic circuits Maintains independent fabrication processes Provides interoperability verification Photonics Design, Fabrication, and Test Electronics Design, Fabrication, and Test 13 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
14 Wire-Bonded Electronic/Photonic Circuits optical fiber probe electrical probe photonics chip 1 mm CMOS chip optical fiber probe 14 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
15 CMOS+WIMZ: Static Performance V IN = 1.0 V, λ= 1530 nm Digital Optical Switch: [J. Van Campenhout et al., CLEO 2010 CPDA12] At V IN = 1 V DC, P ON = 4.2 mw At V IN = 0 V DC P OFF = 32 µw DC, T 11 T 12 T 21 T CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
16 CMOS+WIMZ: Transient Performance Switching Behavior: V IN = PRBS, λ= 1530 nm ~ 0.8 db IL Extinction Ratio & Crosstalk >> 15 db T 11 T 12 T 21 T CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
17 CMOS+WIMZ: Transient Performance Transition Times OFF ON ON OFF t 10/90 = 3.9 ns t 10/90 = 1.4 ns 17 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
18 CMOS+WIMZ: Switching of 160-Gb/s Signal Experimental Setup for 4-λ 40-Gb/s Demonstration 1531 nm 1537 nm passive combiner 40-Gb/s modulator booster EDFA on-chip Si switch 1543 nm 1549 nm spectral decorrelator (1-km SMF) preamp EDFA optical attenuator λ λ att RX tunable filter tunable filter high-speed photo-receiver 18 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
19 CMOS+WIMZ: Switching of 160-Gb/s Signal Eye Diagrams Recorded with -3 dbm/channel Average Power 1530 nm 1537 nm 1543 nm 1550 nm input T 11 (ON) T 22 (ON) T 12 (OFF) T 21 (OFF) 10 ps/div 19 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
20 CMOS+WIMZ: Switching of 160-Gb/s Signal BER Curves Recorded Using a 50-GHz Photo-Receiver input T 11 (ON) T 22 (ON) T 12 (OFF) T 21 (OFF) 1530 nm 1537 nm 1543 nm 1550 nm 20 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
21 CMOS+WIMZ: Power and Energy Contributions 1/f Switching Signal: Square-Wave (50% Duty Cycle) Frequency, f(hertz) Full-Cycle Transition Energies, A(Joules) ON-State Static Power, B(Watts) B A Energy Per Cycle: E = A+ (0.5B)/ f Switching Power: P = Ef= Af+ 0.5B 21 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
22 CMOS+WIMZ: Ultralow Energy-Per-Bit V IN = Square Wave with V H = 1 V & V L = 0 V; V OS = V PA = 1.0 V Preamp Supply (V PA ) Output Stage Supply (V OS ) Total Output Stage Supply Preamp Supply Energy Per Cycle Static ON- State Power Consumption PA 8.0 pj 37 µw OS 5.5 pj 4.0 mw Total 13.5 pj 4.1 mw Example System Parameters No. λ 16 λ Data Rate Packet Duration Energy Per Bit 6.4 nm 20 Gb/s 100 ns ~ 6 fj 22 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
23 Integrated Switch/Driver Performance Summary Switch: Wavelength-Insensitive Mach Zehnder > 100 nm bandwidth > 25 C temperature tolerance ~ 1 V driving voltage < -17 db crosstalk simultaneously achieved Driver: 5-Stage Buffer Chain delivers low-power operation < 50 ps transition times Integrated Switch & Driver ~ 2 mw average power consumption < 4 ns transition times 160-Gb/s bandwidth demonstrated with no observable penalty (ELEC. + PHOT.) Area (mm 2 ) Peak Bandwidth (Tb/s) Power (mw) Single Device Array Assuming example system parameters from previous slide. 23 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
24 Conclusions Conference on Lasers and Electro-Optics May 2010 San Jose, CA We have developed and demonstrated hybrid-integrated electronic and photonic circuits that can form a basis set for future monolithically integrated switch fabrics. Hybrid integration provides quick turnaround on design and test loop. Developed circuits can be included in future monolithic runs. Growing complexity in computercom point-to-point links can be addressed through these resulting monolithic chip-scale optical switch fabrics, which: Provide dynamic link allocation Facilitate WDM encoding formats. Dense optical integration will be required to achieve the cost, power, and density targets driven by future system demands. The work at IBM has been partially supported by DARPA through the Advanced Photonic Switch (APS) program. 24 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
25 Extra Slides Conference on Lasers and Electro-Optics May 2010 San Jose, CA 25 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
26 Carrier Lifetime Tuning Through Surface Passivation 10 3 lifetime can be tuned by over 100 carrier lifet time (ns) v s = 500 cm/s v s = cm/s Si 3 N 4 coated reference waveguide width (nm) [Van Campenhout et al., Opt. Lett. 34(10) 2009] 26 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
27 CMOS+WIMZ: Switching of 160-Gb/s Signal Optical Spectrum Recorded Following the Booster EDFA 27 CThJ1: Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics 2010 IBM Corporation
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