EPIC: The Convergence of Electronics & Photonics

Transcription

1 EPIC: The Convergence of Electronics & Photonics K-Y Tu, Y.K. Chen, D.M. Gill, M. Rasras, S.S. Patel, A.E. White ell Laboratories, Lucent Technologies M. Grove, D.C. Carothers, A.T. Pomerene, T. Conway AE Systems L.C. Kimerling, J. Michel, M.A. eals, D.K. Sparacin Massachusetts Institute of Technology M. Lipson, A.. Apsel Cornell University C. Wong Columbia University

2 Spectrums of Signal to Process (example: commercial wireless) 100 MHz ands (Needs more input!) 450 MHz GSM bands M M M M M: Mobile transmit : ase station transmit MHz GSM ands DCS 1800 PCS 1900 UMTS/FDD UMTS/TDD 900 MHz M M GSM bands M MHz 1900 MHz GSM/UMTS bands 1710 M M M M MHz roadcasting Satellites Land mobiles Fixed wireless Amateur Radiolocation MHz Groups of Spectrum

3 Typical Wireless Transceiver Metallic cavity filter SAW or ceramic filters Active circuits 7 x5.5 x1.3 5mmx5mmx1.2mm 2mmx3mmx0.5mm Would Would like like Q s Q s >5,000 >5,000 est est if if Q >300 >300 Would Would like like Q s Q s >2,000 >2,000 Courtesy: Clark T.-C. Nguyen Would Would like like Q s Q s >10,000 >10,000

4 Processing Wireless Signals Optically E to O Antenna Coax Cable Antenna O to E Optical Fiber Antenna E to O OSP* + O to E Optical Fiber Signal Analysis Reduce weight, size & power Signal Analysis Signal Analysis *Optical Signal Processing, for e.g., separating signal into individual channels Government Apps Performance critical Optics compact! Commercial Apps Need to reduce Cost critical cost of optical Optics expensive! components

5 Cost Reduction by Integration Electronics in standard silicon PCs, PDAs, cars, cell phones, Gameoys, DVRs, standard silicon has highest volume, ensures lowest cost No equivalent of standard silicon in optics To reduce cost of optical Integrate Optical devices built on diverse technology optics on components platforms standard silicon InP, LiNbO 3, InGaAs, SiO 2 -PLCs, MEMS, LC,

6 EW AS-EPIC Program Objectives To demonstrate the world s first densely integrated Application Specific Electronic Photonic Integrated Circuit (AS-EPIC) using an electronic warfare (EW) application as a demonstration vehicle. Approach Integrate the best technology and designs from AE Systems, Lucent Technologies, MIT, and AWR to realize our AS-EPIC chip. This involves combining CMOS compatible, low loss, high index contrast (HIC) waveguides and electro optic components to form optical filters, modulators, and detectors. Tasks Develop an integrated, broadband (2MHz-18GHz), RF-photonic channelizer. Create an open-architecture optical component library that is completely compatible with CMOS processes. Fab devices at AE Foundry and characterize at team test facilities 7 EW Microwave Channelizer 4.5X Increased IW IW 95X Reduction Reduction in Size Size 80X Reduction in in Weight 5X Reduction in in *Power* 100X Reduction Reduction in Cost in Cost Nickel Size EPIC RF Photonic Channelizer Chip

7 Why Now? FEATURE SIZE (nm) Moore s Law Electron λ (~ 10 nm) QUANTUM REGIME Year 2004 Photon λ (~ nm) 90 nm Technological advances in standard silicon processing makes this the right time!

8 Optics Integration with Silicon OPTICS in standard silicon Electronics ELECTRONICS in standard silicon Use same standard silicon processes to build optical and electronic functionality Electronic & Photonic Integrated Circuits

9 EPIC Channelizer Chip RF IN Optical Channellizer Filter 1 Detector TIA LASER 20 X 20 mm Chip 100 Photonic Devices 1000 Electrical Devices Modulator Multimode Interferometric Splitter Filter ank Detector TIA Optical Filter Elements Optical ends & Transitions Modulator AS-EPIC lock Diagram Modulator Mode-locked Laser Multi-mode Interferometric Splitter 300MHz to 2.2GHz RF Multimode Interferometric Splitter One Element of A Filter ank Filter n Detector/TIA Detector Optical Channelizer Slice TIA Detected Waveforms (Electrical)

10 Optical Waveguides Transmission Loss = 0.35 d/cm Phase I Goal: <0.5 d/cm achieved SOI waveguides achieved 0.35 d/cm transmission loss Latest waveguide short loop demonstrated State of the Art transmission loss for highly confined deposited waveguides (~4 d/cm) Standard test structure for waveguide loss

11 Courtesy of Armani, Spillane, Kippenberg, Vahala

12 Filter Layout Fully tunable 4 th order pole-zero filter Phase shifter In Κ=0.5 R 1 R 2 Κ=0.5 R 3 R 4 Tunable MZ coupler κ 1, φ 1 κ 2, φ 2 β-φ tot Through In φ tot -β Cross κ 1, φ 1 κ 2, φ 2 Can dynamically move the zeros & poles of the 4th order filter providing wide range of passband tunability

13 Transmittance (d) Flexible Channel Tuning f GHz f 0 f GHz Single design can work for all channels! Frequency (THz) RF In Filter 1 Detector TIA RF Out CW LASER Modulator Silicon Chip Multi-mode Interferometric Splitter Filter n Detector TIA RF Out

14 (andwidth) x (Quantum efficiency) Size : 5µm 20µm Q.E: 90% transit time limit Ge-on-Si Photodetector Integration Waveguide-Integrated, EPIC Photodetector RC time limit d=0.5um d=1.0um d=1.5um d=2.0um Detector Size µm( 2 ) Discrete, free-space Photodetectors Ge Photodetector Wavelength W (nm) Responsivity (A/W) Size (um) Speed (Gb/s) Waveguide - Detector Coupling Efficiency

15 Micro-ring Modulator Width = 450nm Gap = 200nm Diameter = 12_m Lowest power consumption reported to date. - Less than 0.3V and µa current needed for complete modulation in DC. - In AC, 3.3Vpp and 1mA current were used. Expected theoretical bandwidth 1.5 Gbit/s using RZ pattern limit >10Gb/s!

16 RF Performance of Channelizer Photonic LO f GHz f 0 Up-converted signal Tuned to f GHz center NF = 68d IIP3 = 26dm SFDR = 88 d*hz 2/3 etter preamp, higher LO, lower optical loss will further improve system NF and SFDR

17 AS-EPIC Summary Devices Optical filter: design, fabrication and test the most sophisticated tunable optical filter with CMOS processing the first optically-lossless CMOS thermo-optic switching (TOS) Si waveguide: design, fabrication and test SOI (0.35d/cm) and deposited silicon ( 4d/cm) Ge detector: design, fabrication and test W=2.5GHz@1500nm, R>0.8A/W Si Modulator: design, fabrication and test =6 Gbit/sec, ER=15 d, L=10 µm, 3mW System SFDR: measured 88 d*hz 2/3 in surrogate system Channel Rejection: measured >28.6 d rejection ratio