Silicon Photonics in Optical Communications. Lars Zimmermann, IHP, Frankfurt (Oder), Germany

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1 Silicon Photonics in Optical Communications Lars Zimmermann, IHP, Frankfurt (Oder), Germany

2 Outline IHP who we are Silicon photonics Photonic-electronic integration IHP photonic technology Conclusions

3 IHP in East Brandenburg 1hr east of Berlin.

4

5 0.25/0.13µm BiCMOS Gate Delay (ps) / /140 f T /f max (GHz) C-Doped SiGe base 2002 Profile optimization Self aligned &elevated extrinsic base 200/200 Low parasitic coll. design Optimized base link 2.5ps 300/ ps 300/ Year 200mm technology regular MPW service 24/7 operation mixed signal design kit support

6 IHP s focus: More than Moore technologies HBT tech. Si Photonics IHP: 0.13 µm BiCMOS Source: ITRS Roadmap 2005

7 Teaming Up! Joint Lab Silicon Photonics Silicon Photonics

8 Why silicon photonics? Traffic growth Source: Cisco Systems, IEEE International Solid State Circuits Conference, 2012

9 Why silicon photonics Transport networks (Source: P. Winzer, Bob TkachAlcatel-Lucent) SE = spectral efficiency = per channel bit-rate / channel spacing [bit/s/hz]

10 Why silicon photonics Transport networks multiplexing higher order modulation formats (Source: P. Winzer, Alcatel-Lucent LEOS Newsletter) High performance complex coherent TRx technology

11 Why silicon photonics High-performance computing / data center Source: IBM Bert Offrein Low-cost high-bandwidth short-reach interconnects

12 Why silicon photonics Fiber to the home (FTTH etc) Source: Cisco White Paper Optical network unit etc

13 Why silicon photonics Radio access networks Source: Fujitsu Global Remote radio-head hauling etc

14 Photonic electronic integration Future transmission systems should provide Higher power efficiency Lower cost Higher capacity Key enabling technology: photonic-electronic integration OIF DP QPSK transmitter OIF DP coherent receiver Source: 100G Ultra Long Haul DWDM Framework Document, OIF

15 About complexity PD Transimpedance amplifier B. Sedighi et al, Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS (2012) Most complexity on electronic side

16 About parasitics C L R Photonics Electronics Parasitics often dominate achievable bandwidth and drive ability Minimizing R, C, L calls for optics really close to the transistors. Monolithic / frontend-of line photonic electronic integration or Photonic Electronics

17 Photonic CMOS SOI-CMOS Luxtera (130nm) IBM (90nm) Bulk CMOS with SPE / poly-soi Samsung (65nm) MIT/TI (28nm)

18 Communication ICs Typical driver IC technologies: GaAs, InP, SiGe IHP 40Gbit/sec modulator driver IHP 40Gbit/sec transimpedance amplifier Figure of merit breakdown-voltage x f T 1 2 Gate Delay (ps) / /140 f T /f max (GHz) 2000 C-Doped SiGe base 2002 Profile optimization Self aligned &elevated extrinsic base 200/200 Low parasitic coll. design Optimized base link 2.5ps 300/ ps 300/ Year Photonic BiCMOS

19 Photonic BiCMOS? 220nm 2µm?? High performance BiCMOS usually implemented on bulk silicon ~ 1µm 1) Fabrication incompatibility BiCMOS deep sub-collector implant Source:

20 Photonic BiCMOS? High-speed electronics power hungry Driving easily >400mW Source: Intel SiO 2 Excellent heat dissipation vital for high-speed silicon 1.4W/mK Heat dissipation through buried oxide 149W/mK Heat dissipation through bulk silicon 2) Buried oxide incompatible with HBT heat dissipation

21 Reconciliation Local SOI 1) Fabrication incompatibility 2) Buried oxide incompatible with HBT heat dissipation Mixed substrate Local SOI + bulk mc-si: 220 nm Photonics Local Buried Oxide Substrate (Si) Reconstructed Si Substrate BiCMOS D. Knoll et al, "Substrate Design and Thermal Budget Tuning for Integration of Photonic Components in a High-Performance SiGe:C BiCMOS Process," ECS Conference, Hawaii, USA (2012)

22 IHP SiPh technology 0-10 signal [dbm] x10-6 wavelength [µm]

23 IHP SiPh technology Linear loss measurements -5 signal [dbm] db/cm nanowire nanorib length [mm]

24 Fiber coupling grating couplers Standard linear Typically -4dB insertion loss 30nm 1dB bandwidth Linear enhanced Typically -1.5dB insertion loss 30nm 1dB bandwidth S. Lischke Accepted, ACP, Beijing, 2013

25 Germanium photodetectors Ge waveguide photodiode Cross section S. Lischke IEEE Phot. Conf., San Francisco, 2012

26 E/O waveguides for modulators Phase shift by free carrier dispersion

27 Modulators resonant structures S. Meister et al, OPTICS EXPRESS, Gb/s Injection type operation

28 Depletion type MZ modulators 6 5 1mm 6.6mm D. Thomson et al, IEEE STQE, 2013 Phase shift (radians) Reverse Bias (V) 20Gbit/sec 30Gbit/sec

29 Modulator with 10Gbit/sec driver Phase shift + tuning

30 Driver design Simplified schematic Differential output: 5.6V Design for 10Gbit/sec operation.

31 Cross sections Mixed substrate

32 Photonic BiCMOS: Driver + Mach-Zehnder modulator 10Gbit/sec L. Zimmermann et al, ECOC, 2013

33 Conclusions Photonic BiCMOS first driver + MZM results Local SOI technology to reconcile BiCMOS and SOI Photonic BiCMOS for High-performance SiPh System integration

34 We acknowledge support by German Ministry of Research and Education (BMBF), projects: SASER, RF2THzSiSoC, SILIMOD, PHOIBOS EU-FP7-ICT-HELIOS/GALACTICO Dieter Knoll, Andrzej Gajda, Stefan Lischke, Georg Winzer, Harald Richter, Bernd Heinemann, Karsten Voigt, Stefan Meister, Hanjo Rhee, Christoph Theiss, Ulrike Woggon, Bernd Tillack, Klaus Petermann

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