ML1350 Monolithic IF Amplifier

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1 M35 Monolithic IF Amplifier Legacy Device: Motorola M35 The M35 is an integrated circuit featuring wide range AGC for use as a linear IF amplifier in AM radio, shortwave, TV and instrumentation. Power Gain: 5 db Typ at 45 MHz 5 db Typ at 5 MHz AGC Range: 6 db Min, DC to 45 MHz Nearly Constant & Admittance over the Entire AGC Range Y21 Constant (3. db) to 9 MHz Low Reverse Transfer Admittance: << 1. µmho Typical 12 V Operation, SinglePolarity Power Supply Operating Temperature Range TA = to +75 C Note: See M49 Similar Function MAXIMUM RATINGS (TA = +25 C, unless otherwise noted.) Rating Symbol Value Unit Power Supply Voltage V+ +1 Vdc Supply Voltage V1, V +1 Vdc AGC Supply Voltage VAGC V+ Vdc Differential Voltage Vin 5. Vdc Power Dissipation (Package Limitation) Plastic Package Derate above 25 C PD mw mw/ C 1 SO = -5P CASE 751 (SO) P DIP = PP CASE 626 CROSS REFERENCE/ORDERING INFORMATION PACKAGE MOTOROLA LANSDALE P DIP M35P M35PP SO M35D M35-5P Note: Lansdale lead free (Pb) product, as it becomes available, will be identified by a part number prefix change from ML to MLE. 1 Operating Temperature Range TA to +75 C Figure 1. Typical M35 Video IF Amplifier and M33 LowLevel Video Detector Circuit 45MHz.2µF µF.1µF 3.3k.1µF 6pF M35 M33AP +1Vdc 1V Auxiliary Video 1V Primary Video and Sound 7.7V 3.9k 5.k µ F.2µ F 2pF 12pF 3 33pF k AFT AGC 5" 3" " 1 Turns Turns 4 Turns All windings #3 AWG tinned nylon acetate wire tuned with Carbonyl E or J slugs. 3" 16 wound with #26 AWG tinned nylon acetate wire tuned by distorting winding. Page 1 of 6

2 M35 ELECTRICAL CHARACTERISTICS (V+ = +12 Vdc, TA = +25 C, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit AGC Range, 45 MHz (5. V to 7. V) (Figure 1) 6 6 db Power Gain (Pin 5 grounded via a 5.1 kω resistor) f = 5 MHz, BW = 4.5 MHz See Figure 6(a) f = 45 MHz, BW = 4.5 MHz See Figure 6(a), (b) f = 1.7 MHz, BW = 35 khz See Figure 7 f = 455 khz, BW = 2 khz Maximum Differential Voltage Swing db AGC 3 db AGC Stage Current (Pins 1 and ) I1 + I 5.6 ma Total Supply Current (Pins 1, 2 and ) IS madc Power Dissipation PD mw DESIGN PARAMETERS, Typical Values (V+ = +12 Vdc, TA = +25 C, unless otherwise noted.) SingleEnded Admittance Ap VO 46 Frequency Parameter Symbol 455 khz 1.7 MHz 45 MHz 5 MHz Unit g11 b db Vpp mmho Admittance Variations with AGC ( db to 6 db) g11 b11 6 µmho Differential Admittance g22 b µmho Admittance Variations with AGC ( db to 6 db) g22 b µmho Reverse Transfer Admittance (Magnitude) y12 < < 1. < < 1. < < 1. < < 1. µmho Forward Transfer Admittance Magnitude Angle ( db AGC) Angle (3 db AGC) y21 < y21 < y21 SingleEnded Capacitance Cin pf Differential Capacitance CO pf mmho Degrees Degrees GAIN REDUCTION (db) Figure 2. Typical Gain Reduction IAGC =.1 ma (Figures 6 and 7) IAGC =.2 ma VAGC, SUPPLY VOLTAGE (V) NOISE FIGURE (db) Figure 3. Noise Figure versus Gain Reduction MHz MHz 12 (Figure 6) GAIN REDUCTION (db) Page 2 of 6

3 M35 The input amplifiers (Q1 and Q2) operate at constant emitter currents so that input impedance remains independent of AGC action. signals may be applied singleended or differentially (for AC) with identical results. Terminals 4 and 6 may be driven from a transformer, but a DC path from either terminal to ground is not permitted. AGC 7 5 AGC Amplifier Section 47 Q3 Q4 Figure 4. Circuit Schematic Q5 2.k 47 Q6 5.53k 1.47k 12.1 k GENERAL OPERATING INFORMATION V+ 2 (+) V ( ) AGC action occurs as a result of an increasing voltage on the base of Q4 and Q5 causing these transistors to conduct more heavily thereby shunting signal current from the interstage amplifiers Q3 and Q6. The output amplifiers are supplied from an active current source to maintain constant quiescent bias thereby holding output admittance nearly constant. Collector voltage for the output amplifier must be supplied through a centertapped tuning coil to Pins 1 and. The 12 V supply (V+) at Pin 2 may be used for this purpose, but output admittance remains more nearly constant if a separate 15 V supply (V+ +) is used, because the base voltage on the output amplifier varies with AGC bias. Figure 5. Frequency Response Curve (45 MHz and 5 MHz) 4 ( ) s 6 ( + ) Q1 66 Q2 1.4k Q7 Q1 Q 45 Q9 2.k k 5.k 5.k 1.1k 1.1k 5.6k.4k 1.9k 2 7 Gnd Amplifier Section Bias Supplies Amplifier Section Scale: 1. MHz/cm (a) 45 MHz and 5 MHz +12V Figure 6. Power Gain, AGC and Noise Figure Test Circuits (b) Alternate 45 MHz R S = 5Ω V AGC *.1µF.1µF L P L P 1.52pF L P.1 µf M µF R L = 5Ω R S = 5Ω V AGC.6µH M µH +12V R L = 5Ω.1µF.1µF *Connect to ground for maximum power gain test. All power supply chokes (Lp), are selfresonant at input frequency. LP 2 kω. See Figure 5 for Frequency Response Curve..1 Ferrite Core 14 Turns 2 45 MHz = 7 1/4 Turns on a 1/4" coil 5 MHz = 6 Turns on a 1/4" coil form Primary Winding = 1 Turns on a 1/4" coil form, centertapped, #25 AWG Secondary Winding = 2 Turns centered over Primary 45 MHz = 1 5 MHz Slug = Carbonyl E or J 525 pf 525 pf 525 pf 45 MHz 5 MHz.4 µh Q 1.3 µh Q µh to 3.4 µh Q 2. µh 1.2 µh to 3. µh Q 2. µh 5 pf to 16 pf. pf to 6 pf. pf to 6 pf 3. pf to 35 pf Page 3 of 6

4 M35 Legacy Applications Information Figure 7. Power Gain and AGC Test Circuit (455 khz and 1.7 MHz) R S = 5Ω V AGC * *Grounded for maximum power gain M C7 C6 C5 12 V C4 R S = 5Ω Component C4 C5 C C7 Frequency 455 khz 1.7 MHz.5 µf.5 µf.1 µf.5 µf.5 µf Note 1 45 pf 5. pf.1 µf.5 µf 36 pf.5 µf.5 µf 4.6 µf Note 2 NOTES: 1. Primary: 12 µh (centertapped) NOTES: 1. Q u = 14 at 455 khz NOTES: 1. Primary: Secondary turns ratio 13 NOTES: 2. Primary: 6. µh NOTES: 2. Primary winding = 24 turns #36 AWG NOTES: 2. (closewound on 1/4" dia. form) NOTES: 2. Core = Carbonyl E or J NOTES: 2. Secondary winding = 11/2 turns #36 AWG, 1/4" dia. NOTES: 2. (wound over centertap) Figure. SingleEnded Admittance Figure 9. Forward Transfer Admittance 5. 5 < Y21 (3 db gain) 4. 4 < Y21 (max gain) 4 g11,b 11 (mmhos) b11 g11 Y 21 (mmhos) Y (DEGREES) < Y 21 (mmho) g 22, b f, FREQUENCY (MHz) Figure 1. Differential Admittance (Singleended output admittance exhibits twice these values.) f, FREQUENCY (MHz) b22 g22 DIFFERENTIAL OUTPUT VOLTAGE (V) f, FREQUENCY (MHz) Figure 11. Differential Voltage V + + = 14 V V + + = 12 V GAIN REDUCTION (db) Page 4 of 6

5 M35 Figure 12. Typical application of a AM Modulator using M35 V1 12V +V C4.1uF 22pF L2 1uH R3 1k 4% AGC RF input V2 1V +V R1 R2 P1 5 MOD input C7 1uF P2.1uF rfin 4 gnd agc 5 3 M35 rfin 6 vcc 2 gnd 7 rfout t rfou 1 U2 C5 47pF C6 47pF RF out P3.1uF Page 5 of 6

6 M35 OUTLINE DIMENSIONS NOTE 2 T SEATING PLANE H F A G D N B C K.13 (.5) M T A M B M P DIP = PP (M35PP) CASE 6265 ISSUE K L J M NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 192. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G 2.54 BSC.1 BSC H J K L 7.62 BSC.3 BSC M N T 1 4 G X D A 5 B K 4X P C SEATING PLANE.25 (.1) M T B S A S.25 (.1) M B M M SO = -5P (M35-5P) CASE 7515 (SO) ISSUE N R X 45 J F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G 1.27 BSC.5 BSC J K M P R Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. Typical parameters which may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by the customer s technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc. Page 6 of 6

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