2K x 8 Reprogrammable PROM
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- Rudolph Sydney Eaton
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1 1CY 7C29 2A CY7C291A Features Windowed for reprogrammability CMOS for optimum speed/power High speed 20 ns (commercial) 25 ns (military) Low power 660 mw (commercial and military) Low standby power 220 mw (commercial and military) EPROM technology 100% programmable Slim 300-mil or standard 600-mil packaging available 5V ±10% V CC, commercial and military TTL-compatible I/O Direct replacement for bipolar PROMs Capable of withstanding >2001V static discharge Functional Description 2K x 8 Reprogrammable PROM identical, but are packaged in 300-mil (7C291A, 7C293A) and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C291A, CY7C292A, and CY7C293A are plug-in replacements for bipolar devices and offer the advantages of lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits. A read is accomplished by placing an active LOW signal on CS 1, and active HIGH signals on CS 2 and CS 3. The contents of the memory location addressed by the address line (A 0 A 10 ) will become available on the output lines (O 0 O 7 ). The CY7C291A, CY7C292A, and CY7C293A are high-performance 2K-word by 8-bit CMOS PROMs. They are functionally Logic Block Diagram Pin Configurations A 0 A 1 A 2 A 3 A 4 A 5 A 6 A 7 A 8 A 9 A 10 CS 1 CS 2 CS 3 ROW ADDRESS ADDRESS DECODER COLUMN ADDRESS PROGRAM- MABLE ARRAY POWER DOWN 7C293A MULTI- PLEXER O 7 O 6 O 5 O 4 O 3 O 2 O 1 O 0 C291A-1 A 7 A 6 A 5 A 4 A 3 A 2 A 1 A 0 DIP Top View C291A 22 7C292A 21 7C293A O O O GND V CC A 8 A 9 A 10 CS 1 CS 2 CS 3 O 7 O 6 O 5 O 4 O 3 C291A-2 LCC/PLCC (Opaque Only) Top View A A 10 A 3 6 7C291A 24 CS 1 A CS 2 A CS 3 A NC NC 7C293A O 7 O O C291A-3 Window available on 7C291A and 7C293A only. Cypress Semiconductor Corporation 3901 North First Street San Jose CA March 1986 Revised May 1993
2 Selection Guide 7C291A-20 7C292A-20 7C293A-20 7C291A-25 7C292A-25 7C293A-25 7C291AL-25 7C292AL-25 7C293AL-25 7C291A-35 7C292A-35 7C293A-35 7C291AL-35 7C292AL-35 7C293AL-35 7C291A-50 7C292A-50 7C293A-50 7C291AL-50 7C292AL-50 7C293AL-50 Maximum Access Time (ns) Maximum Operating Current (ma) Standby Current (ma) 7C293A Only Standard Commercial Military L Commercial Commercial Military Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature C to+150 C Ambient Temperature with Power Applied C to+125 C Supply Voltage to Ground Potential V to+7.0v DC Voltage Applied to Outputs in High Z State V to+7.0v DC Input Voltage V to +7.0V DC Program Voltage V UV Exposure Wsec/cm 2 Static Discharge Voltage...>2001V (per MIL-STD-883, Method 3015) Latch-Up Current... >200 ma Operating Range Range Ambient Temperature V CC Commercial 0 C to + 70 C 5V ±10% Industrial [1] 40 C to + 85 C 5V ±10% Military [2] 55 C to C 5V ±10% Notes: 1. Contact a Cypress representative for industrial temperature range specifications. 2. T A is the instant on case temperature. 2
3 Electrical Characteristics Over the Operating Range [3,4] 7C291A-20 7C292A-20 7C293A-20 7C291A-25 7C292A-25 7C293A-25 7C291AL-25 7C292AL-25 7C293AL-25 Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Unit V OH Output HIGH Voltage V CC = Min., I OH = 4.0 ma V V OL Output LOW Voltage V CC = Min., I OL = 16.0 ma V V IH Input HIGH Voltage Guaranteed Input Logical HIGH Voltage for All Inputs V IL Input LOW Voltage Guaranteed Input Logical LOW Voltage for All Inputs 2.0 V CC 2.0 V CC 2.0 V CC V V I IX Input Load Current GND < V IN < V CC µa V CD Input Diode Clamp Voltage Note 4 I OZ Output Leakage Current GND < V OUT < V CC, Output Disabled I OS I CC I SB µa Output Short Circuit V CC = Max., V OUT = GND ma Current [5] V CC Operating Supply Current Standby Supply Current (7C293A Only) V CC = Max., I OUT = 0 ma Com l ma Mil 120 V CC = Max., Com l ma CS 1 = V IH Mil 40 V PP Programming Supply Voltage V I PP Programming Supply Current ma V IHP V ILP Input HIGH Programming Voltage Input LOW Programming Voltage V V Notes: 3. See the last page of this specification for Group A subgroup testing information. 4. See the Introduction to CMOS PROMs section of the Cypress Data Book for general information on testing. 5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 3
4 Electrical Characteristics Over the Operating Range [3,4] (continued) 7C291AL-35, 50 7C292AL-35, 50 7C293AL-35, 50 7C291A-35, 50 7C292A-35, 50 7C293A-35, 50 Parameter Description Test Conditions Min. Max. Min. Max. Unit V OH Output HIGH Voltage V CC = Min., I OH = 4.0 ma V V OL Output LOW Voltage V CC = Min., I OL = 16.0 ma V V IH Input HIGH Voltage Guaranteed Input Logical HIGH Voltage for All Inputs V IL Input LOW Voltage Guaranteed Input Logical LOW Voltage for All Inputs V V I IX Input Load Current GND < V IN < V CC µa V CD Input Diode Clamp Voltage Note 4 I OZ Output Leakage Current GND < V OUT < V CC, Output Disabled µa I OS Output Short Circuit Current [5] V CC = Max., V OUT = GND ma I CC V CC Operating Supply Current V CC = Max., V IN = 2.0V I OUT =0 ma I SB Standby Supply Current (7C293A Only) Commercial ma Military 90 V CC = Max., Commercial ma CS 1 =V IH Military 40 V PP Programming Supply Voltage V I PP Programming Supply Current ma V IHP Input HIGH Programming Voltage V V ILP Input LOW Programming Voltage V Capacitance [4] Parameter Description Test Conditions Max. Unit C IN Input Capacitance T A = 25 C, f = 1 MHz, 10 pf C OUT Output Capacitance V CC = 5.0V 10 pf 4
5 AC Test Loads and Waveforms [4] 5V OUTPUT 30pF INCLUDING JIG AND SCOPE R1250 Ω (a) Normal Load R2 167Ω 5V OUTPUT 5pF INCLUDING JIG AND SCOPE R1250Ω R2 167Ω C291A-4 (b) HighZ Load ALL INPUT PULSES 3.0V 90% 90% GND 10% 10% < 5 ns < 5 ns C291A-5 Equivalent to: THÉ VENIN EQUIVALENT 100Ω OUTPUT 2.0V C291A-6 V CC SUPPLY CURRENT t PD t PU 50% 50% A 0 A 10 ADDRESS CS 2 CS 3 CS 1 t AA t HZCS t ACS O 0 - O 7 C291A-7 Switching Characteristics Over the Operating Range [3, 4] 7C291A-20 7C292A-20 7C293A-20 7C291A-25 7C292A-25 7C293A-25 7C291AL-25 7C292AL-25 7C293AL-25 7C291A-35 7C292A-35 7C293A-35 7C291AL-35 7C292AL-35 7C293AL-35 7C291A-50 7C292A-50 7C293A-50 7C291AL-50 7C292AL-50 7C293AL-50 Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit t AA Address to Output Valid ns t HZCS1 Chip Select Inactive to High Z ns t ACS1 Chip Select Active to Output Valid ns t HZCS2 t ACS2 t PU t PD Chip Select Inactive to High Z ns (7C293A CS 1 Only) [6] Chip Select Active to Output Valid ns (7C293A CS 1 Only) [6] Chip Select Active to Power-Up (7C293A CS 1 Only) Chip Select Inactive to Power-Down (7C293A CS 1 Only) Notes: 6. t HZCS2 and t ACS2 refer to 7C293A CS 1 only ns ns 5
6 Erasure Characteristics Wavelengths of light less than 4000 Angstroms begin to erase these PROMs. For this reason, an opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a minimum dose (UV intensity x exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mw/cm 2 power rating, the exposure time would be approximately 35 minutes. Table 1. Mode Selection These PROMs need to be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-intensity UV light for an extended period of time Wsec/cm 2 is the recommended maximum dosage. Programming Information Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed programming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. Pin Function [7] Read or Output Disable A 10 A 0 CS 3 CS 2 CS 1 O 7 O 0 Mode Other A 10 A 0 PGM VFY V PP D 7 D 0 Read A 10 A 0 V IH V IH V IL O 7 O 0 Output Disable [8] A 10 A 0 X X V IH High Z Output Disable A 10 A 0 X V IL X High Z Output Disable A 10 A 0 V IL X X High Z Program A 10 A 0 V ILP V IHP V PP D 7 D 0 Program Verify A 10 A 0 V IHP V ILP V PP O 7 O 0 Program Inhibit A 10 A 0 V IHP V IHP V PP High Z Intelligent Program A 10 A 0 V ILP V IHP V PP D 7 D 0 Blank Check Zeros A 10 A 0 V IHP V ILP V PP Zeros Notes: 7. X = don t care but not to exceed V CC +5%. 8. The power-down mode for the CY7C293A is activated by deselecting CS 1. DIP Top View LCC/PLCC (Opaque Only) Top View A 7 A 6 A 5 A 4 A 3 A 2 A 1 A 0 D 0 D 1 D 2 GND C291A C292A 5 7C293A V CC A 8 A 9 A 10 V PP VFY PGM D 7 D 6 D 5 D 4 D 3 C291A A A 3 6 7C291A 24 A A A NC 10 7C293A 20 D A 10 V PP VFY PGM NC D 7 D 6 C291A-9 Figure 1. Programming Pinouts 6
7 Typical DC and AC Characteristics 1.6 NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.2 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE T A =25 C f= f MAX SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE ( C) T A =25 C SUPPLY VOLTAGE (V) C291A NORMALIZED ACCESS TIME vs. TEMPERATURE 60 OUTPUT SOURCE CURRENT vs. VOLTAGE TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING V CC =4.5V T A =25 C AMBIENT TEMPERATURE( C) OUTPUT VOLTAGE (V) CAPACITANCE (pf) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE I CC vs. CYCLEPERIOD V CC =5.5V T A =25 C V CC =5.0V T A =25 C OUTPUT VOLTAGE (V) CYCLEPERIOD (ns) C291A-11 7
8 Ordering Information [9] Speed (ns) I CC (ma) Ordering Code Package Name Package Type Operating Range CY7C291A-20JC J64 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291A-20PC P13 24-Lead (300-Mil) Molded DIP CY7C291A-20SC S13 24-Lead Molded SOIC CY7C291A-20WC W14 24-Lead (300-Mil) Windowed CerDIP CY7C291AL-25JC J64 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL-25PC P13 24-Lead (300-Mil) Molded DIP CY7C291AL-25WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C291A-25JC J64 28-Lead Plastic Leaded Chip Carrier CY7C291A-25PC P13 24-Lead (300-Mil) Molded DIP CY7C291A-25SC S13 24-Lead Molded SOIC CY7C291A-25WC W14 24-Lead (300-Mil) Windowed CerDIP 120 CY7C291A-25DMB D14 24-Lead (300-Mil) CerDIP Military CY7C291A-25LMB L64 28-Square Leadless Chip Carrier CY7C291A-25QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C291A-25TMB T73 24-Lead Windowed Cerpack CY7C291A-25WMB W14 24-Lead (300-Mil) Windowed CerDIP CY7C291A-30DMB D14 24-Lead (300-Mil) CerDIP Military CY7C291A-30LMB L64 28-Square Leadless Chip Carrier CY7C291A-30QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C291A-30TMB T73 24-Lead Windowed Cerpack CY7C291A-30WMB W14 24-Lead (300-Mil) Windowed CerDIP CY7C291AL-35JC J64 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL-35PC P13 24-Lead (300-Mil) Molded DIP CY7C291AL-35WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C291A-35SC S13 24-Lead Molded SOIC Commercial CY7C291A-35PC P13 24-Lead (300-Mil) Molded DIP CY7C291A-35WC W14 24-Lead (300-Mil) Windowed CerDIP 120 CY7C291A-35DMB D14 24-Lead (300-Mil) CerDIP Military CY7C291A-35LMB L64 28-Square Leadless Chip Carrier CY7C291A-35QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C291A-35TMB T73 24-Lead Windowed Cerpack CY7C291A-35WMB W14 24-Lead (300-Mil) Windowed CerDIP Notes: 9. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. 8
9 Ordering Information [9] (Continued) Speed (ns) I CC (ma) Ordering Code Package Name Package Type CY7C291AL-50JC J64 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL-50PC P13 24-Lead (300-Mil) Molded DIP CY7C291AL-50WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C291A-50SC S13 24-Lead Molded SOIC Commercial CY7C291A-50PC P13 24-Lead (300-Mil) Molded DIP CY7C291A-50WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C291A-50DMB D14 24-Lead (300-Mil) CerDIP Military CY7C291A-50LMB L64 28-Square Leadless Chip Carrier CY7C291A-50QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C291A-50TMB T73 24-Lead Windowed Cerpack CY7C291A-50WMB W14 24-Lead (300-Mil) Windowed CerDIP CY7C292A-20DC D12 24-Lead (600-Mil) CerDIP Commercial CY7C292A-20PC P11 24-Lead (600-Mil) Molded DIP CY7C292A-25DC D12 24-Lead (600-Mil) CerDIP Commercial CY7C292A-25PC P11 24-Lead (600-Mil) Molded DIP CY7C292A-25DMB D12 24-Lead (600-Mil) CerDIP Military CY7C292A-30DMB D12 24-Lead (600-Mil) CerDIP Military CY7C292AL-35PC P11 24-Lead (600-Mil) Molded DIP Commercial 90 CY7C292A-35DC D12 24-Lead (600-Mil) CerDIP Commercial CY7C292A-35PC P11 24-Lead (600-Mil) Molded DIP 120 CY7C292A-35DMB D12 24-Lead (600-Mil) CerDIP Military CY7C292AL-50PC P11 24-Lead (600-Mil) Molded DIP Commercial 90 CY7C292A-50DC D12 24-Lead (600-Mil) CerDIP Commercial CY7C292A-50PC P11 24-Lead (600-Mil) Molded DIP 120 CY7C292A-50DMB D12 24-Lead (600-Mil) CerDIP Military CY7C293A-20PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293A-20WC W14 24-Lead (300-Mil) Windowed CerDIP CY7C293A-25PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293A-25WC W14 24-Lead (300-Mil) Windowed CerDIP CY7C293A-25DMB D14 24-Lead (300-Mil) CerDIP Military CY7C293A-25LMB L64 28-Square Leadless Chip Carrier CY7C293A-25QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C293A-25WMB W14 24-Lead (300-Mil) Windowed CerDIP Operating Range 9
10 Ordering Information [9] (Continued) Speed (ns) I CC (ma) Ordering Code Package Name Package Type CY7C293A-30DMB D14 24-Lead (300-Mil) CerDIP Military CY7C293A-30LMB L64 28-Square Leadless Chip Carrier CY7C293A-30QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C293A-30WMB W14 24-Lead (300-Mil) Windowed CerDIP CY7C293AL-35PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293AL-35WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C293A-35PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293A-35WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C293A-35DMB D14 24-Lead (300-Mil) CerDIP Military CY7C293A-35LMB L64 28-Square Leadless Chip Carrier CY7C293A-35QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C293A-35WMB W14 24-Lead (300-Mil) Windowed CerDIP CY7C293AL-50PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293AL-50WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C293A-50PC P13 24-Lead (300-Mil) Molded DIP Commercial CY7C293A-50WC W14 24-Lead (300-Mil) Windowed CerDIP 90 CY7C293A-50DMB D14 24-Lead (300-Mil) CerDIP Military CY7C293A-50LMB L64 28-Square Leadless Chip Carrier CY7C293A-50QMB Q64 28-Pin Windowed Leadless Chip Carrier CY7C293A-50WMB W14 24-Lead (300-Mil) Windowed CerDIP Operating Range 10
11 MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter Document #: G Subgroups V OH 1, 2, 3 V OL 1, 2, 3 V IH 1, 2, 3 V IL 1, 2, 3 I IX 1, 2, 3 I OZ 1, 2, 3 I CC 1, 2, 3 I SB [10] 1, 2, 3 Switching Characteristics Parameter Subgroups t AA 7, 8, 9, 10, 11 t ACS1 [11] t ACS2 [10] Notes: 10. 7C293A only C291A and 7C292A only. 7, 8, 9, 10, 11 7, 8, 9, 10, 11 SMD Cross Reference SMD Number Suffix Cypress Number KX CY7C291-50TMB LX CY7C291-50WMB X CY7C291-50QMB KX CY7C291-35TMB LX CY7C291-35WMB X CY7C291-35QMB LX CY7C293A-50WMB KX CY7C293A-50TMB X CY7C293A-50QMB LX CY7C293A-35WMB KX CY7C293A-35TMB X CY7C293A-35QMB LX CY7C293A-30WMB KX CY7C293A-30TMB X CY7C293A-30QMB LX CY7C293A-25WMB KX CY7C293A-25TMB X CY7C293A-25QMB JX CY7C292A-45DMB KX CY7C291A-45KMB LX CY7C291A-45DMB X CY7C291A-45LMB JX CY7C292A-35DMB KX CY7C291A-35KMB LX CY7C291A-35DMB X CY7C291A-35LMB JX CY7C292A-25DMB KX CY7C291A-25KMB LX CY7C291A-25DMB X CY7C291A-25LMB 11
12 Package Diagrams 24-Lead (600-Mil) CerDIP D12 MIL-STD-1835 D- 3 Config.A 28-Square Leadless ChipCarrier L64 MIL-STD-1835 C-4 24-Lead (300-Mil) CerDIP D14 MIL-STD-1835 D- 9Config.A 12
13 Package Diagrams (Continued) 24-Lead (600-Mil) Molded DIP P11 24-Lead (300-Mil) Molded DIP P13/P13A 13
14 Package Diagrams (Continued) 28-Pin Windowed Leadless ChipCarrier Q64 MIL-STD-1835 C-4 24-Lead (300-Mil) Molded SOIC S13 14
15 Package Diagrams (Continued) 24-Lead Windowed Cerpack T73 24-Lead (300-Mil) WindowedCerDIP W14 MIL-STD-1835 D- 9 Config.A Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
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41 CYM1441 Features High-density 2-megabit module High-speed CMOS s Access time of 20 ns Low active power 5.3W (max.) SMD technology Separate data I/O 60-pin ZIP package TTL-compatible inputs and outputs
KEY FEATURES. Immune to Latch-UP Fast Programming. ESD Protection Exceeds 2000 V Asynchronous Output Enable GENERAL DESCRIPTION TOP VIEW A 10
HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES Ultra-Fast Access Time DESC SMD Nos. 5962-88735/5962-87529 25 ns Setup Pin Compatible with AM27S45 and 12 ns Clock to Output CY7C245 Low Power
Flash Erasable, Reprogrammable CMOS PAL Device
Features Low power ma max. commercial (1 ns) 13 ma max. commercial (5 ns) CMO Flash EPROM technology for electrical erasability and reprogrammability Variable product terms 2 x(8 through 16) product terms
27C Bit ( x 8) UV Erasable CMOS PROM Military Qualified
27C256 262 144-Bit (32 768 x 8) UV Erasable CMOS PROM Military Qualified General Description The 27C256 is a high-speed 256K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications
Am27C Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM
FINAL Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time 90 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved pinout Plug in upgrade
Flash-erasable Reprogrammable CMOS PAL Device
PALCE22V1 is a replacement device for PALC22V1, PALC22V1B, and PALC22V1D. UE ULTRA37 TM FOR ALL NEW DEGN PALCE22V1 Features Low power 9 ma max. commercial (1 ns) 13 ma max. commercial (5 ns) CMO Flash
1 Mbit (128K x 8) Static RAM
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64-Macrocell MAX EPLD
43B CY7C343B Features 64 MAX macrocells in 4 LABs 8 dedicated inputs, 24 bidirectional pins Programmable interconnect array Advanced 0.65-micron CMOS technology to increase performance Available in 44-pin
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
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256K (32K x 8) Static RAM
256K (32K x 8) Static RAM Features Temperature Ranges Commercial: 0 C to 70 C Industrial: 40 C to 85 C Automotive-A: 40 C to 85 C Automotive-E: 40 C to 125 C Speed: 70 ns Low Voltage Range: 2.7V to 3.6V
NMC27C32B Bit (4096 x 8) CMOS EPROM
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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
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NMC27C64 65,536-Bit (8192 x 8) CMOS EPROM
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SOIC (SOP) NC A8 A9 A10 A11 A12 A13 A14 A15 A16 NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 BYTE/VPP GND O15/A-1 GND O7 O14 O6 O13 O5 O12 O4 VCC
Features Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Operation -100 µa Maximum Standby - 50 ma Maximum Active at 5 MHz Wide Selection
CY Features. Logic Block Diagram
Features Temperature Ranges -Commercial:0 to 70 -Industrial: -40 to 85 -Automotive: -40 to 125 High speed: 55ns and 70 ns Voltage range : 4.5V 5.5V operation Low active power (70ns, LL version, Com l and
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NM27C ,288-Bit (64K x 8) High Performance CMOS EPROM
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256K (32K x 8) Paged Parallel EEPROM AT28C256
Features Fast Read Access Time 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
FM27C ,144-Bit (32K x 8) High Performance CMOS EPROM
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P4C1299/P4C1299L. ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES DESCRIPTION. Full CMOS, 6T Cell. Data Retention with 2.0V Supply (P4C1299L)
FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 15/20/25/35 ns (Commercial/Industrial) 15/20/25/35/45 ns (Military) Low Power Operation Single 5V±10% Power Supply Output Enable (OE)
1K x 8 Dual-Port Static RAM
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NTE27C256 12D, NTE27C256 15D, NTE27C256 70D Integrated Circuit 256 Kbit (32Kb x 8) UV EPROM 28 Lead DIP Type Package
NTE27C256 12D, NTE27C256 15D, NTE27C256 70D Integrated Circuit 256 Kbit (32Kb x 8) UV EPROM 28 Lead DIP Type Package NTE27C256 15P Integrated Circuit 256 Kbit (32Kb x 8) OTP EPROM 28 Lead DIP Type Packag
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TMS27C BY 16-BIT UV ERASABLE TMS27PC BY 16-BIT PROGRAMMABLE READ-ONLY MEMORIES
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MM74HC00 Quad 2-Input NAND Gate
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