256K x 8 Static RAM Module

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1 41 CYM1441 Features High-density 2-megabit module High-speed CMOS s Access time of 20 ns Low active power 5.3W (max.) SMD technology Separate data I/O 60-pin ZIP package TTL-compatible inputs and outputs Low profile Max. height of 0.5 in. Small PCB footprint 1.14 sq. in. 256K x 8 Static RAM Module Functional Description The CYM1441 is a very high performance 2-megabit static RAM module organized as 256K words by 8 bits. The module is constructed using eight static RAMs in SOJ packages mounted onto an epoxy laminate substrate with pins. Two chip selects (CS L and CS U ) are used to independently enable the upper and lower 4 bits of the data word. Writing to the memory module is accomplished when the chip select (CS) and write enable () inputs are both LOW. Data on the eight input pins (DI 0 through DI 7 ) is written into the memory location specified on the address pins (A 0 through A 17 ). Reading the device is accomplished by taking chip select (CS) LOW while write enable () remains inactive or HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the appropriate data output pins (DO 0 through DO 7 ). The data output pins remain in a highimpedance state unless the module is selected and write enable () is HIGH.Two pins (PD 0 and PD 1 ) are used to identify module memory density in applications where alternate versions of the JEDEC-standard modules can be interchanged. Logic Block Diagram A 0 - A 17 CS U DI 4 - DI 7 CS L DI 0 - DI 3 DO 0 - DO 3 Pin Configuration ZIP TopView (OPEN)PD 0 DI 0 DO 0 A 0 A 2 A 4 A 6 DI 1 DO 1 DO 4 - DO 7 A 9 CS L DI 2 DO 2 A 10 A 12 A 14 A 16 DI 3 DO PD 1 () DI 4 DO 4 A 1 A 3 A 5 A 7 DI 5 DO 5 A 8 CS U DI 6 DO 6 A 11 A 13 A 15 A 17 DI 7 DO 7 Cypress Semiconductor Corporation 3901 North First Street San Jose CA Document #: Rev. ** Revised March 15, 2002

2 Selection Guide Shaded area contains preliminary information. Maximum Ratings (Above which the useful life may be impaired.) Storage Temperature C to +125 C Ambient Temperature with Power Applied C to +85 C Supply Voltage to Ground Potential V to +7.0V Maximum Access Time (ns) Maximum Operating Current (ma) Maximum Standby Current (ma) DC Voltage Applied to Outputs in High Z State V to +7.0V DC Input Voltage V to +7.0V Operating Range Ambient Range Temperature Commercial 0 C to +70 C 5V ± 10% Electrical Characteristics Over the Operating Range Parameter Description Test Conditions Min. Max. Unit V OH Output HIGH Voltage = Min., I OH = 4.0 ma 2.4 V V OL Output LOW Voltage = Min., I OL = 12.0 ma 0.4 V V IH Input HIGH Voltage 2.2 V V IL Input LOW Voltage [1] V I IX Input Load Current < V I < µa I OZ Output Leakage Current < V O <, Output Disabled µa I CC Operating Supply Current = Max., I OUT = 0 ma, CS < V IL 960 ma I SB1 Automatic CS Max., CS > V IH, 320 ma Power-Down Current Min. Duty Cycle = 100% I SB2 Capacitance [2] Automatic CS Power-Down Current Max., CS > - 0.2V, V IN > - 0.2V or V IN < 0.2V 160 ma Parameter Description Test Conditions Max. Unit C IN Input Capacitance T A = 25 C, f = 1 MHz, 60 pf C OUT Output Capacitance = 5.0V 15 pf AC Test Loads and Waveforms R1329 Ω 5V OUTPUT 30 pf ILUDING JIG AND SCOPE (a) R1329 Ω 5V OUTPUT R2 202Ω 5 pf ILUDING JIG AND SCOPE (b) R2 202Ω 3.0V <5ns 10% ALL INPUT PULSES 90% 90% 10% < 5ns Equivalent to: OUTPUT THÉ VENIN EQUIVALENT 125Ω 1.9V Notes: 1. V IN (min.) = 3.0V for pulse widths less than 20 ns. 2. Tested on a sample basis. Document #: Rev. ** Page 2 of 6

3 Switching Characteristics Over the Operating Range [3] Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit READ CYCLE t RC Read Cycle Time ns t AA Address to Data Valid ns t OHA Data Hold from Address Change ns t ACS CS LOW to Data Valid ns t LZCS CS LOW to Low Z ns t HZCS CS HIGH to High Z [4] ns t PU CS LOW to Power-Up ns t PD CS HIGH to Power-Down ns WRITE CYCLE [5] t WC Write Cycle Time ns t SCS CS LOW to Write End ns t AW Address Set-Up to Write End ns t HA Address Hold from Write End ns t SA Address Set-Up to Write Start ns t P Pulse Width ns t SD Data Set-Up to Write End ns t HD Data Hold from Write End ns t LZ HIGH to Low Z ns t HZ LOW to High Z [4] ns Shaded area contains preliminary information. Switching Waveforms [6,7] Read Cycle No. 1 ADDRESS t RC t OHA t AA PREVIOUS Notes: 3. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL /I OH and 30-pF load capacitance. 4. t HZCS and t HZ are specified with C L = 5 pf as in part (b) of AC Test Loads and Waveforms. Transition is measured ±500 mv from steady state voltage. 5. The internal write time of the memory is defined by the overlap of CS LOW and LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 6. is HIGH for read cycle. 7. Device is continuously selected, CS = V IL. Document #: Rev. ** Page 3 of 6

4 Switching Waveforms (continued) [6,8] Read Cycle No. 2 CS t RC t LZCS t ACS HIGH IMPEDAE t HZCS HIGH IMPEDAE SUPPLY CURRENT t PU 50% t PD 50% ICC ISB Write Cycle No. 1 ( Controlled) [5] t WC ADDRESS CS t SCS t AW t SA t P t HA t SD t HD DATAIN t HZ t LZ DATA UNDEFINED HIGH IMPEDAE [5,9] Write Cycle No. 2 (CS Controlled) t WC ADDRESS t SA t SCS CS t AW t P t HA t SD t HD DATAIN t HZ DATA UNDEFINED HIGH IMPEDAE Notes: 8. Address valid prior to or coincident with CS transition LOW. 9. If CS goes HIGH simultaneously with HIGH, the output remains in a high-impedance state. Document #: Rev. ** Page 4 of 6

5 Truth Table CS Input/Output Mode H X High Z Deselect/Power-Down L H Data Out Read L L Data In Write Ordering Information Speed Ordering Code Package Name Package Type Operating Range 20 CYM1441PZ-20C PZ04 60-Pin ZIP Module Commercial 25 CYM1441PZ-25C PZ04 60-Pin ZIP Module Commercial 35 CYM1441PZ-35C PZ04 60-Pin ZIP Module Commercial 45 CYM1441PZ-45C PZ04 60-Pin ZIP Module Commercial Shaded area contains preliminary information. Package Diagrams 60-Pin ZIP Module PZ04 BottomView MAX MAX Pin 1 DIMENSIONS IN IHES MIN. MAX. Document #: Rev. ** Page 5 of 6 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.

6 Document Title: CYM K x 8 Static RAM Module Document Number: Issue Orig. of REV. ECN NO. Date Change Description of Change ** /19/02 DSG Change from Spec number: 38-M to Document #: Rev. ** Page 6 of 6

64K x V Static RAM Module

64K x V Static RAM Module 831V33 Features High-density 3.3V 2-megabit SRAM module High-speed SRAMs Access time of 12 ns Low active power 1.512W (max.) at 12 ns 64 pins Available in ZIP format Functional Description CYM1831V33 64K