128K (16K x 8-Bit) CMOS EPROM
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1 1CY 27C1 28 fax id: 3011 CY27C K (16K x 8-Bit) CMOS EPROM Features Wide speed range 45 ns to 200 ns (commercial and military) Low power 248 mw (commercial) 303 mw (military) Low standby power Less than 83 mw when deselected ±10% Power supply tolerance Functional Description The CY27C128 is a high-performance 16,384-word by 8-bit CMOS EPROM. When disabled (CE HIGH), the CY27C128 automatically powers down into a low-power stand-by mode. The CY27C128 is packaged in the industry standard 600-mil DIP and LCC packages. The CY27C128 is also available in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms. The CY27C128 offers the advantage of lower power and superior performance and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each EPROM is also tested for AC performance to guarantee that after customer programming, the product will meet both DC and AC specification limits. Reading the CY27C128 is accomplished by placing active LOW signals on OE and CE. The contents of the memory location addressed by the address lines (A 0 - A 13 ) will become available on the output lines (O 0 - O 7 ). Logic Block Diagram Pin Configurations A 13 O 7 A 12 A 11 A 10 A 9 A 8 A 7 A 6 A 5 A 4 A 3 A 2 A 1 A 0 ROW ADDRESS ADDRESS DECODER COLUMN ADDRESS 128 x 1024 PROGRAMABLE ARRAY 8 x 1 OF 128 MULTIPLEXER O 6 O 5 O 4 O 3 O 2 V PP A 12 A 7 A 6 A 5 A 4 A 3 A 2 A 1 A 0 O 0 O 1 O 2 GND DIP/Flatpack C V CC PGM A 13 A 8 A 9 A 11 OE A 10 CE O 7 O 6 O 5 O 4 O 3 C128 2 A 6 A 5 A 4 A 3 A 2 A 1 A 0 NC O 0 LCC/PLCC [1] A C A A NC 9 25 OE A CE O O C128 3 POWER DOWN O 1 O 0 CE OE C128 1 Cypress Semiconductor Corporation 3901 North First Street San Jose CA February 1994
2 Selection Guide 27C C C C C C C Maximum Access Time (ns) Maximum Operating Current (ma) [2] Com l Mil Standby Current (ma) Com l Mil Chip Select Time (ns) Output Enable Time (ns) Notes: 1. For PLCC only: Pins 1 and 17 are common and tied to the die attach pad. They must therefore be DU (don t use) for the PLCC package. 2. Add 2 ma/mhz for AC power component. Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature C to +150 C Ambient Temperature with Power Applied C to +125 C Supply Voltage to Ground Potential V to +7.0V DC Voltage Applied to Outputs in High Z State V to +7.0V DC Input Voltage V to +7.0V DC Program Voltage V Static Discharge Voltage... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current... >200 ma UV Exposure Wsec/cm 2 Operating Range Range Ambient Temperature V CC Commercial 0 C to +70 C 5V ±10% Industrial [3] -40 C to +85 C 5V ±10% Military [4] -55 C to +125 C 5V ±10% 2
3 Electrical Characteristics Over the Operating Range [5] Parameter Description 27C128-45, 55, 70, 90, 120, 150, 200 Test Conditions Min. Max. V OH Output HIGH Voltage V CC = Min., I OH = -4.0 ma 2.4 V V OL Output LOW Voltage V CC = Min., I OL = 16.0 ma [6] 0.4 V V IH Input HIGH Level Guaranteed Input Logical HIGH Voltage for All Inputs V IL Input LOW Level Guaranteed Input Logical LOW Voltage for All Inputs Unit 2.0 V CC V V I IX Input Current GND < V IN < V CC µa I OZ Output Leakage Current GND < V OUT < V CC, Output Disabled Commercial µa Military µa I OS Output Short Circuit Current [7] V CC = Max., V OUT = GND ma I CC Power Supply Current [2] V CC = Max., V IN =V IH, Commercial 45 ma I OUT = 0 ma, CE=V IL, OE = V IH Military 55 I SB Standby Supply Current V CC = Max., CE = V IH Commercial 15 ma Military 20 V PP Programming Supply Voltage V I PP Programming Supply Current 50 ma V IHP V ILP Input HIGH Programming Voltage Input LOW Programming Voltage 3.0 V 0.4 V Capacitance [8] Parameter Description Test Conditions Max. Unit C IN Input Capacitance T A = 25 C, f = 1 MHz, 10 pf C OUT Output Capacitance V CC = 5.0V 10 pf Notes: 3. Contact a Cypress representative for information on industrial temperature range specifications. 4. T A is the instant on case temperature. 5. See the last page of this specification for Group A subgroup testing information. 6. I OL =12.0 ma for military devices. 7. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 8. See Introduction to CMOS PROMs in this Data Book for general information on testing. 3
4 AC Test Loads and Waveforms 5V OUTPUT 30 pf INCLUDING JIG AND SCOPE R1 250Ω (329Ω MIL) (a) NormalLoad R2 167Ω (202Ω MIL 5V OUTPUT 5 pf INCLUDING JIG AND SCOPE (b) HighZ Load R1 250Ω (329Ω MIL) R2 167Ω (202Ω MIL C128 4 ALL INPUT PULSES 3.0V GND 90% 10% 90% 10% < 5 ns < 5 ns C128 5 Equivalent to: THÉ VENIN EQUIVALENT OUTPUT 100Ω 2.00V OUTPUT 125Ω 1.9V Commercial Military [5, 8] Switching Characteristics Over the Operating Range Parameter Description 27C C C C Min. Max. Min. Max. Min. Max. Min. Max. t AA Address to Output Valid ns t HZOE Outpout Enable Inactive to High Z ns t OE Output Enable Active to Output Valid ns t HZCE Chip Enable Inactive to High Z ns t ACE Chip Enable Active to Output Valid ns t PU Chip Enable Active to Power Up ns t PD Chip Enable Inactive to Power Down ns t OH Output Hold from Address Change ns Unit Switching Characteristics Over the Operating Range [5, 8] (continued) 27C C C Parameter Description Min. Max. Min. Max. Min. Max. Unit t AA Address to Output Valid ns t HZOE Outpout Enable Inactive to High Z ns t OE Output Enable Active to Output Valid ns t HZCE Chip Enable Inactive to High Z ns t ACE Chip Enable Active to Output Valid ns t PU Chip Enable Active to Power Up ns t PD Chip Enable Inactive to Power Down ns t OH Output Hold from Address Change ns 4
5 Switching Waveform I CC SUPPLY CURRENT t PD t PU 50% 50% POWER-DOWN CONTROLLED BY CE A 0 - A 13 ADDRESS OE, CE t OH t AA (t HZOE ) t HZCE (t OE ) t ACE O 0 - O 7 PREVIOUS DA TA VALID DATA VALID HIGH Z C128 6 Erasure Characteristics Wavelengths of light less than 4000 Å begin to erase the 27C128 in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Å for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mw/cm 2 power rating, the exposure time would be approximately 35 minutes. The CY27C128 needs to be Table 1. CY27C128 Mode Selection within 1 inch of the lamp during erasure. Permanent damage may result if the EPROM is exposed to high-intensity UV light for an extended period of time Wsec/cm 2 is the recommended maximum dosage. Programming Modes Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed programming information, including a listing of software packages, please see the EPROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. Pin Function [9] Mode A 13 - A 0 OE CE V PP PGM O 7 - O 0 Read A 13 - A 0 V IL V IL X Note 10 O 7 - O 0 Output Disable A 13 - A 0 V IH X X Note 10 High Z Power Down A 13 - A 0 X V IH X Note 10 High Z Notes: 9. X must be either V IL or V IH. 10. X must be either V IL or V IH (must not switch). 5
6 Typical DC and AC Characteristics NORMALIZED SUPPLYCURRENT NORMALIZED SUPPLYCURRENT vs. SUPPLYVOLTAGE vs. AMBIENT TEMPERATURE T A =25C f= f MAX SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE ( C) NORMALIZED ACCESSTIME vs. SUPPLY VOLTAGE SUPPLY VOLTAGE (V) NORMALIZED ACCESSTIME vs. TEMPERATURE OUTPUT SOURCECURRENT vs. OUTPUT VOLTAGE TYPICALACCESS TIME CHANGE vs. OUTPUT LOADING V CC =5V T A =25 C V CC =4.5V T A =25 C AMBIENTTEMPERATURE( C) OUTPUTVOLTAGE(V) CAPACITANCE(pF) 1000 OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE V CC =5.0V 50 T A =25 C OUTPUT VOLTAGE(V) 4.0 NORMALIZED SUPPLYCURRENT vs. ACCESS TIME V CC =5.6V T A =25 C CYCLE TIME (ns) 6
7 Ordering Information [11] Speed (ns) Ordering Code Package Name Package Type Operating Range 45 CY27C128-45JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C128-45PC P15 28-Lead (600-Mil) Molded DIP CY27C128-45WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C128-45WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 55 CY27C128-55JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C128-55PC P15 28-Lead (600-Mil) Molded DIP CY27C128-55WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C128-55WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 70 CY27C128-70JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C128-70PC P15 28-Lead (600-Mil) Molded DIP CY27C128-70WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C128-70WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 90 CY27C128-90JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C128-90PC P15 28-Lead (600-Mil) Molded DIP CY27C128-90WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C128-90WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 120 CY27C JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C PC P15 28-Lead (600-Mil) Molded DIP CY27C WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 150 CY27C JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C PC P15 28-Lead (600-Mil) Molded DIP CY27C WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C WMB W16 28-Lead (600-Mil) Windowed CerDIP Military 200 CY27C JC J65 32-Pin Rectangular Plastic Leaded Chip Carrier Commercial CY27C PC P15 28-Lead (600-Mil) Molded DIP CY27C WC W16 28-Lead (600-Mil) Windowed CerDIP CY27C WMB W16 28-Lead (600-Mil) Windowed CerDIP Military Notes: 11. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. 7
8 MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter Subgroups V OH 1, 2, 3 V OL 1, 2, 3 V IH 1, 2, 3 V IL 1, 2, 3 I IX 1, 2, 3 I OZ 1, 2, 3 I CC 1, 2, 3 I SB 1, 2, 3 Switching Characteristics Parameter Subgroups t AA 7, 8, 9, 10, 11 t OE 7, 8, 9, 10, 11 t ACE 7, 8, 9, 10, 11 Document #:
9 Package Diagrams 32-Lead Plastic Leaded Chip Carrier J65 28-Lead (600-Mil) Molded DIP P15 9
10 Package Diagrams (continued) 28-Lead (600-Mil) Windowed CerDIP W16 MIL-STD-1835 D-10 Config.A Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
8K x 8 EPROM CY27C64. Features. Functional Description. fax id: 3006
1CY 27C6 4 fax id: 3006 CY27C64 Features CMOS for optimum speed/power Windowed for reprogrammability High speed 0 ns (commercial) Low power 40 mw (commercial) 30 mw (military) Super low standby power Less
32K x 8 Power Switched and Reprogrammable PROM
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32K x 8 Power Switched and Reprogrammable PROM
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8K x 8 Power-Switched and Reprogrammable PROM
8K x 8 Power-Switched and Reprogrammable PROM Features CMOS for optimum speed/power Windowed for reprogrammability High speed 20 ns (commercial) 25 ns (military) Low power 660 mw (commercial) 770 mw (military)
2K x 8 Reprogrammable PROM
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2K x 8 Reprogrammable PROM
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32K x 8 Reprogrammable Registered PROM
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512 x 8 Registered PROM
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PRELIMINARY C106A 1. 7C106A 12 7C106A 15 7C106A 20 7C106A 25 7C106A 35 Maximum Access Time (ns) Maximum Operating
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SENSE AMPS POWER DOWN
185 CY7C185 8K x 8 Static RAM Features High speed 15 ns Fast t DOE Low active power 715 mw Low standby power 220 mw CMOS for optimum speed/power Easy memory expansion with,, and OE features TTL-compatible
I/O 1 I/O 2 I/O 3 A 10 6
Features High speed 12 ns Fast t DOE CMOS for optimum speed/power Low active power 495 mw (Max, L version) Low standby power 0.275 mw (Max, L version) 2V data retention ( L version only) Easy memory expansion
2Kx8 Dual-Port Static RAM
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A 4 A 3 A 2 ROW DECODER 64K x 16 RAM Array I/O 1 I/O X 2048 I/O 9 I/O 16
021 CY7C1021 Features High speed t AA = 12 ns CMOS for optimum speed/power Low active power 1320 mw (max.) Automatic power-down when deselected Independent Control of Upper and Lower bits Available in
I/O 1 I/O 2 I/O 3 A 10 6
Features High speed 12 ns Fast t DOE CMOS for optimum speed/power Low active power 467 mw (max, 12 ns L version) Low standby power 0.275 mw (max, L version) 2V data retention ( L version only) Easy memory
I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 A 16 I/O 7 A 15 7
Features High speed t AA = 12 ns Low active power 495 mw (max.) Low CMOS standby power 11 mw (max.) (L Version) 2.0V Data Retention Automatic power-down when deselected TTL-compatible inputs and outputs
I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 A 16 I/O 7
128K x 8 Static RAM Features High speed t AA = 12 ns Low active power 495 mw (max. 12 ns) Low CMOS standby power 55 mw (max.) 4 mw 2.0V Data Retention Automatic power-down when deselected TTL-compatible
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I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7
Features High speed t AA = 12 ns Low active power 1320 mw (max.) Low CMOS standby power (Commercial L version) 2.75 mw (max.) 2.0V Data Retention (400 µw at 2.0V retention) Automatic power-down when deselected
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 2K x 8 Dual-Port Static RAM Features True Dual-Ported memory cells which
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 256K (32K x 8) Static RAM Features Temperature Ranges Commercial: 0 C to
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Features Fast Read Access Time - 45 ns Low-Power CMOS Operation 100 µa max.
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