UAA2016 ZERO VOLTAGE SWITCH POWER CONTROLLER

Size: px
Start display at page:

Download "UAA2016 ZERO VOLTAGE SWITCH POWER CONTROLLER"

Transcription

1 Order this document by UAA6/D The UAA6 is designed to drive triacs with the Zero Voltage technique which allows RFI free power regulation of resistive loads. Operating directly on the AC power line, its main application is the precision regulation of electrical heating systems such as panel heaters or irons. A built in digital sawtooth waveform permits proportional temperature regulation action over a ± C band around the set point. For energy savings there is a programmable temperature reduction function, and for security a sensor failsafe inhibits output pulses when the sensor connection is broken. Preset temperature (i.e. defrost) application is also possible. In applications where high hysteresis is needed, its value can be adjusted up to C around the set point. All these features are implemented with a very low external component count. Zero Voltage Switch for Triacs, up to. kw (MACA) Direct AC Line Operation Proportional Regulation of Temperature over a C Band Programmable Temperature Reduction Preset Temperature (i.e. Defrost) Sensor Failsafe Adjustable Hysteresis Low External Component Count ZERO VOLTAGE SWITCH POWER CONTROLLER SEMICONDUCTOR TECHNICAL DATA P SUFFIX PLASTIC PACKAGE CASE 66 D SUFFIX PLASTIC PACKAGE CASE 7 (SO ) PIN CONNECTIONS Representative Block Diagram Vref Hys. Adj. 7 Sync VCC Sense Input Failsafe + Sampling Full Wave Logic UAA6 Pulse Amplifier 6 Output Sensor Temp. Reduc. (Top View) 6 Output VEE Temperature Reduction / Internal Reference 7 +VCC Hysteresis Adjust Voltage Reference Bit DAC Bit Counter Synchronization Sync Supply Voltage VEE Device UAA6D UAA6P ORDERING INFORMATION Operating Temperature Range TA = to + C Package SO Plastic DIP This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. MOTOROLA ANALOG IC DEVICE DATA Motorola, Inc. 996 Issue

2 UAA6 MAXIMUM RATINGS (Voltages referenced to Pin 7) Rating Symbol Value Unit Supply Current (IPin ) ICC ma Non Repetitive Supply Current (Pulse Width =. µs) ICCP ma AC Synchronization Current Isync. ma Pin Voltages VPin VPin VPin VPin 6 ; Vref ; Vref ; Vref ; VEE Vref Current Sink IPin. ma Output Current (Pin 6) (Pulse Width < µs) IO ma Power Dissipation PD 6 mw Thermal Resistance, Junction to Air RθJA C/W Operating Temperature Range TA to + C ELECTRICAL CHARACTERISTICS (TA = C, VEE = 7. V, voltages referred to Pin 7, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Supply Current (Pins 6, not connected) ICC ma (TA = to + C).9. Stabilized Supply Voltage (Pin ) (ICC =. ma) VEE 9.. V Reference Voltage (Pin ) Vref 6... V V Output Pulse Current (TA = to + C) (Rout = 6 W, VEE =. V) IO 9 ma Output Leakage Current (Vout = V) IOL µa Output Pulse Width (TA = to + C) (Note ) (Mains = Vrms, Rsync = kω) TP µs Comparator Offset (Note ) Voff + mv Sensor Input Bias Current IIB. µa Sawtooth Period (Note ) TS.96 sec Sawtooth Amplitude (Note 6) AS 7 9 mv Temperature Reduction Voltage (Note ) (Pin Connected to VCC) VTR mv Internal Hysteresis Voltage (Pin Not Connected) VIH mv Additional Hysteresis (Note ) (Pin Connected to VCC) VH mv Failsafe Threshold (TA = to + C) (Note 7) VFSth mv NOTES:. Output pulses are centered with respect to zero crossing point. Pulse width is adjusted by the value of R sync. Refer to application curves.. The actual sawtooth period depends on the AC power line frequency. It is exactly times the corresponding period. For the Hz case it is.96 sec. For the 6 Hz case it is. sec. This is to comply with the European standard, namely that. kw loads cannot be connected or removed from the line more than once every sec.. mv corresponds to C temperature reduction. This is tested at probe using internal test pad. Smaller temperature reduction can be obtained by adding an external resistor between Pin and V CC. Refer to application curves.. mv corresponds to a hysteresis of C. This is tested at probe using internal test pad. Smaller additional hysteresis can be obtained by adding an external resistor between Pin and V CC. Refer to application curves.. Parameter guaranteed but not tested. Worst case mv corresponds to. C shift on set point. 6. Measured at probe by internal test pad. 7 mv corresponds to C. Note that the proportional band is independent of the NTC value. 7. At very low temperature the NTC resistor increases quickly. This can cause the sensor input voltage to reach the failsafe threshold, thus inhibiting output pulses; refer to application schematics. The corresponding temperature is the limit at which the circuit works in the typical application. By setting this threshold at. V ref, the NTC value can increase up to times its nominal value, thus the application works below C. MOTOROLA ANALOG IC DEVICE DATA

3 UAA6 Figure. Application Schematic S S RS Rdef R R R Sense Input Failsafe + Sampling Full Wave Logic UAA6 Pulse Amplifier 6 Rout Output MACA NTC Temp. Red / Internal Reference 7 +VCC Vac CF Bit DAC HysAdj Bit Counter Synchronization Supply Voltage Load Vref Sync VEE Rsync RS APPLICATION INFORMATION (For simplicity, the LED in series with Rout is omitted in the following calculations.) Triac Choice and Rout Determination Depending on the power in the load, choose the triac that has the lowest peak gate trigger current. This will limit the output current of the UAA6 and thus its power consumption. Use Figure to determine Rout according to the triac maximum gate current (IGT) and the application low temperature limit. For a. kw load at Vrms, a good triac choice is the Motorola MACA. Its maximum peak gate trigger current at C is ma. For an application to work down to C, Rout should be 6 Ω. It is assumed that: IGT(T) = IGT( C) exp ( T/) with T in C, which applies to the MACA. Output Pulse Width, Rsync The pulse with TP is determined by the triac s IHold, ILatch together with the load value and working conditions (frequency and voltage): Given the RMS AC voltage and the load power, the load value is: RL = Vrms/POWER The load current is then: I (Vrms sin(ft) V ) R Load TM L where VTM is the maximum on state voltage of the triac, f is the line frequency. Set ILoad = ILatch for t = TP/ to calculate TP. Figures 6 and 7 give the value of TP which corresponds to the higher of the values of IHold and ILatch, assuming that VTM =.6 V. Figure gives the Rsync that produces the corresponding TP. RSupply and Filter Capacitor With the output current and the pulse width determined as above, use Figures 9 and to determine RSupply, assuming that the sinking current at Vref pin (including NTC bridge current) is less than. ma. Then use Figure and to determine the filter capacitor (CF) according to the ripple desired on supply voltage. The maximum ripple allowed is. V. Temperature Reduction Determined by R (Refer to Figures and.) MOTOROLA ANALOG IC DEVICE DATA

4 UAA6 Figure. Comparison Between Proportional Control and ON/OFF Control Room Temperature T ( C) Proportional Band Overshoot Time (minutes, Typ.) Time (minutes, Typ.) Heating Power P(W) Proportional Temperature Control Reduced Overshoot Good Stability Time (minutes, Typ.) ON/OFF Temperature Control Large Overshoot Marginal Stability Time (minutes, Typ.) Figure. Zero Voltage Technique AC Line Waveform IHold TP TP is centered on the zero crossing. ILatch Gate Current Pulse T x R sync 7 (µs) P Vrms x f f = AC Line Frequency (Hz) Vrms = AC Line RMS Voltage (V) Rsync = Synchronization Resistor (Ω) MOTOROLA ANALOG IC DEVICE DATA

5 Power Supply (Pin and Pin 7) The application uses a current source supplied by a single high voltage rectifier in series with a power dropping resistor. An integrated shunt regulator delivers a VEE voltage of.6 V with respect to Pin 7. The current used by the total regulating system can be shared in four functional blocks: IC supply, sensing bridge, triac gate firing pulses and zener current. The integrated zener, as in any shunt regulator, absorbs the excess supply current. The Hz pulsed supply current is smoothed by the large value capacitor connected between Pins and 7. Temperature Sensing (Pin ) The actual temperature is sensed by a negative temperature coefficient element connected in a resistor divider fashion. This two element network is connected between the ground terminal Pin and the reference voltage. V available on Pin. The resulting voltage, a function of the measured temperature, is applied to Pin and internally compared to a control voltage whose value depends on several elements: Sawtooth, Temperature Reduction and Hysteresis Adjust. (Refer to Application Information.) Temperature Reduction For energy saving, a remotely programmable temperature reduction is available on Pin. The choice of resistor R connected between Pin and VCC sets the temperature reduction level. Comparator When the positive input (Pin ) receives a voltage greater than the internal reference value, the comparator allows the triggering logic to deliver pulses to the triac gate. To improve the noise immunity, the comparator has an adjustable hysteresis. The external resistor R connected to Pin sets the hysteresis level. Setting Pin open makes a mv hysteresis level, corresponding to. C. Maximum hysteresis is obtained by connecting Pin to VCC. In that UAA6 CIRCUIT FUNCTIONAL DESCRIPTION case the level is set at C. This configuration can be useful for low temperature inertia systems. Sawtooth Generator In order to comply with European norms, the ON/OFF period on the load must exceed seconds. This is achieved by an internal digital sawtooth which performs the proportional regulation without any additional component. The sawtooth signal is added to the reference applied to the comparator negative input. Figure shows the regulation improvement using the proportional band action. Noise Immunity The noisy environment requires good immunity. Both the voltage reference and the comparator hysteresis minimize the noise effect on the comparator input. In addition the effective triac triggering is enabled every / sec. Failsafe Output pulses are inhibited by the failsafe circuit if the comparator input voltage exceeds the specified threshold voltage. This would occur if the temperature sensor circuit is open. Sampling Full Wave Logic Two consecutive zero crossing trigger pulses are generated at every positive mains half cycle. This ensures that the number of delivered pulses is even in every case. The pulse length is selectable by Rsync connected on Pin. The pulse is centered on the zero crossing mains waveform. Pulse Amplifier The pulse amplifier circuit sinks current pulses from Pin 6 to VEE. The minimum amplitude is 7 ma. The triac is then triggered in quadrants II and III. The effective output current amplitude is given by the external resistor Rout. Eventually, an LED can be inserted in series with the Triac gate (see Figure ). R out, OUTPUT RESISTOR ( Ω ) 6 6 Figure. Output Resistor versus Triac Gate Current TA = C TA = + C TA = C TA = C 6 IGT, TRIAC GATE CURRENT SPECIFIED AT C (ma) I Out(min), MINIMUM OUTPUT CURRENT (ma) 6 6 Figure. Minimum Output Current versus Output Resistor TA = C 6 Rout, OUTPUT RESISTOR (Ω) TA = + C MOTOROLA ANALOG IC DEVICE DATA

6 UAA6 T P, OUTPUT PULSE WIDTH ( µ s) 6 Figure 6. Output Pulse Width versus Maximum Triac Latch Current Vrms Vrms F = Hz. kw Loads VTM =.6 V TA = C ILatch(max), MAXIMUM TRIAC LATCH CURRENT (ma) 6 T P, OUTPUT PULSE WIDTH ( µ s) 6 Figure 7. Output Pulse Width versus Maximum Triac Latch Current Vrms Vrms F = Hz. kw Loads VTM =.6 V TA = C ILatch(max), MAXIMUM TRIAC LATCH CURRENT (ma) 6 R sync, SYNCHRONIZATION RESISTOR (k Ω ) Figure. Synchronization Resistor versus Output Pulse Width Vrms Vrms 6 TP, OUTPUT PULSE WIDTH (µs) F = Hz R Supply, MAXIMUM SUPPLY RESISTOR (k Ω ) 6 Figure 9. Maximum Supply Resistor versus Output Current 7 IO, OUTPUT CURRENT (ma) V = Vrms F = Hz TP = µs µs µs µs R Supply, MAXIMUM SUPPLY RESISTOR (k Ω ) Figure. Maximum Supply Resistor versus Output Current 7 IO, OUTPUT CURRENT (ma) V = Vrms F = Hz TP = µs µs µs µs C F(min), MINIMUM FILTER CAPACITOR ( µ F) Figure. Minimum Filter Capacitor versus Output Current 6 IO, OUTPUT CURRENT (ma) Ripple =. Vp p F = Hz µs µs µs TP = µs 6 MOTOROLA ANALOG IC DEVICE DATA

7 UAA6 C F(min), MINIMUM FILTER CAPACITOR ( µ F) 6 Figure. Minimum Filter Capacitor versus Output Current 6 IO, OUTPUT CURRENT (ma) Ripple =. Vp p F = Hz TP = µs µs µs µs C) T R, TEMPERATURE REDUCTION ( Figure. Temperature Reduction versus R Setpoint = C kω NTC kω NTC R, TEMPERATURE REDUCTION RESISTOR (kω) C) T R, TEMPERATURE REDUCTION ( Figure. Temperature Reduction versus Temperature Setpoint kω NTC kω NTC 6 TS, TEMPERATURE SETPOINT ( C) R = R DEF /(NOMINAL NTC VALUE) RATIO Figure. RDEF versus Preset Temperature kω NTC kω NTC TDEF, PRESET TEMPERATURE ( C) R S + R /(NOMINAL NTC VALUE) RATIO ( 6 Figure 6. RS + R versus Preset Setpoint kω NTC RDEF = kω 6 TS, TEMPERATURE SETPOINT ( C) TDEF = C kω NTC RDEF = 9 kω V H, COMPARATOR HYSTERESIS VOLTAGE (V)..... Figure 7. Comparator Hysteresis versus R R, HYSTERESIS ADJUST RESISTOR (kω) MOTOROLA ANALOG IC DEVICE DATA 7

8 UAA6 OUTLINE DIMENSIONS NOTE T SEATING PLANE H F A G D N B C K. (.) M T A M B M P SUFFIX PLASTIC PACKAGE CASE 66 ISSUE K L J M NOTES:. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D.... F G. BSC. BSC H J.... K.9... L 7.6 BSC. BSC M N T G X D A B K X P C SEATING PLANE. (.) M T B S A S. (.) M B M M D SUFFIX PLASTIC PACKAGE CASE 7 ISSUE N (SO ) R X J F NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.7 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B....7 C D F G.7 BSC. BSC J K....9 M 7 7 P R....9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, 6F Seibu Butsuryu Center, P.O. Box 9; Phoenix, Arizona 6. 7 or 6 Tatsumi Koto Ku, Tokyo, Japan. MFAX: RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong MOTOROLA ANALOG IC DEVICE UAA6/D DATA

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution

More information

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

MC3456 DUAL TIMING CIRCUIT

MC3456 DUAL TIMING CIRCUIT Order this document by /D The dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting

More information

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by SAA4/D The SAA4 drives a two phase stepper motor in the bipolar mode. The device contains three input stages, a logic section and two output stages. The IC is contained in a pin

More information

WIDEBAND AMPLIFIER WITH AGC

WIDEBAND AMPLIFIER WITH AGC Order this document by MC9/D The MC9 is an integrated circuit featuring wide range AGC for use in RF/IF amplifiers and audio amplifiers over the temperature range, to + C. High Power Gain: db Typ at MHz

More information

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR Order this document by /D The is an adjustable threeterminal negative voltage regulator capable of supplying in excess of 5 ma over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. Order this document by MC3393/D The MC3393 is a new generation industry standard UAA04 Flasher. It has been developed for enhanced EMI sensitivity, system reliability, and improved wiring simplification.

More information

DatasheetArchive.com. Request For Quotation

DatasheetArchive.com. Request For Quotation DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D... for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hfe = 6000 (Typ) @ IC = 3.0 Adc Monolithic

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8020/D The MOC8020 and MOC802 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching

More information

QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS

QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS Order this document by MC3487/D Motorolas Quad EIA422 Driver features four independent driver chains which comply with EIA Standards for the Electrical Characteristics of Balanced Voltage Digital Interface

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE23/D The MJE23 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery

More information

MC34063AD. DC to DC CONVERTER CONTROL CIRCUITS

MC34063AD. DC to DC CONVERTER CONTROL CIRCUITS Order this document by MC3403A/D The MC3403A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These devices consist of an internal temperature compensated

More information

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector

More information

Distributed by: www.jameco.com 1--31-4242 The content and copyrights of the attached material are the property of its owner. Order this document by M3/D The M3 is an integrated circuit featuring wide range

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by N/D The N, N and N7 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

More information

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector

More information

PRODUCT DATASHEET. is brought to you by. SOS electronic distribution of electronic components

PRODUCT DATASHEET. is brought to you by. SOS electronic distribution of electronic components PRODUCT DATASHEET is brought to you by SOS electronic distribution of electronic components Click to view availability, pricing and lifecycle information. Visit https://www.soselectronic.com/ Datasheet

More information

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage

More information

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction

More information

REMOTE CONTROL WIDEBAND AMPLIFIER WITH DETECTOR

REMOTE CONTROL WIDEBAND AMPLIFIER WITH DETECTOR Order this document by MC/D The MC is intended for application in infrared remote controls. It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode to the tuning

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector

More information

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6547/D The 2N6547 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)

More information

PERIPHERAL DRIVER ARRAYS

PERIPHERAL DRIVER ARRAYS Order this document by MC43/D The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

MC1488 QUAD MDTL LINE DRIVER EIA 232D

MC1488 QUAD MDTL LINE DRIVER EIA 232D Order this document by MC/D The MC is a monolithic quad line driver designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard

More information

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC

More information

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @

More information

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)

More information

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF Order this document by MC6C/D The MC6C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for use

More information

MC33349 LITHIUM BATTERY PROTECTION CIRCUIT FOR ONE CELL SMART BATTERY PACKS

MC33349 LITHIUM BATTERY PROTECTION CIRCUIT FOR ONE CELL SMART BATTERY PACKS Order this document by MC33349PP/D The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by /D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS)

More information

2 Amp Zero Cross Triac Output

2 Amp Zero Cross Triac Output SEMICONDUCTOR TECHNICAL DATA Order this document by MOC2A60 /D 2 Amp Zero Cross Triac Output This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero cross triac driver

More information

SEMICONDUCTOR TECHNICAL DATA MECL PLL COMPONENTS PRESCALER WITH STAND BY MODE

SEMICONDUCTOR TECHNICAL DATA MECL PLL COMPONENTS PRESCALER WITH STAND BY MODE SEMIONDUTOR TEHNIAL DATA The M1203 is a 2 prescaler for low power frequency division of a 1.1GHz high frequency input signal. On chip output termination provides output current to drive a 2pF (typical)

More information

For Isolated Package Applications

For Isolated Package Applications SEMONDUCTOR TECHNAL DATA Order this document by BUT11AF/D For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications.

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.

More information

Designer s Data Sheet Insulated Gate Bipolar Transistor

Designer s Data Sheet Insulated Gate Bipolar Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor

More information

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS Order this document by MC13144/D The MC13144 is designed in the Motorola High Frequency Bipolar MOSIAC V wafer process to provide excellent performance in analog and digital communication systems. It includes

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout

More information

MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA

MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MC456/D CMOS The MC456 is a phase locked loop (PLL) frequency synthesizer constructed in CMOS on a single monolithic structure. This synthesizer finds

More information

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount

More information

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator

More information

LM350 THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

LM350 THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR Order this document by /D The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage regulator is exceptionally

More information

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS Order this document by A26LS32/D otorola s Quad EIA422/3 Receiver features four independent receiver chains which comply with EIA Standards for the Electrical Characteristics of Balanced/Unbalanced Voltage

More information

1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS

1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3

More information

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS Order this document by TLC/D These lowcost JFET input operational amplifiers combine two stateof theart linear technologies on a single monolithic integrated circuit. Each internally compensated operational

More information

FACT DATA 5-1 SYNCHRONOUS PRESETTABLE BCD DECADE COUNTER

FACT DATA 5-1 SYNCHRONOUS PRESETTABLE BCD DECADE COUNTER The MC74AC160/74ACT160 and MC74AC162/74ACT162 are high-speed synchronous decade counters operating in e BCD (8421) sequence. They are synchronously presettable for application in programmable dividers

More information

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS Order this document by TLC/D These lowcost JFET input operational amplifiers combine two stateof theart linear technologies on a single monolithic integrated circuit. Each internally compensated operational

More information

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered

More information

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed

More information

HIGH PERFORMANCE VOLTAGE COMPARATORS

HIGH PERFORMANCE VOLTAGE COMPARATORS Order this document by LM/D The ability to operate from a single power supply of. V to V or ± V split supplies, as commonly used with operational amplifiers, makes the LM/LM a truly versatile comparator.

More information

查询 mc1723 供应商捷多邦, 专业 PCB 打样工厂,24 小时加急出货 12V CC V C. 15k. 10 V O 13 Compensation. Current. Limit. 2 Current. Sense. Inverting Input

查询 mc1723 供应商捷多邦, 专业 PCB 打样工厂,24 小时加急出货 12V CC V C. 15k. 10 V O 13 Compensation. Current. Limit. 2 Current. Sense. Inverting Input Motorola, Inc. 199 Rev 查询 mc 供应商捷多邦, 专业 PCB 打样工厂, 小时加急出货 Order this document by MCC/D The MCC is a positive or negative voltage regulator designed to deliver load current to 1 madc. Output current capability

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:

More information

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc

More information

Advance Information MC MOTOROLA. EIA 232 E and CCITT V.28 SEMICONDUCTOR TECHNICAL DATA

Advance Information MC MOTOROLA. EIA 232 E and CCITT V.28 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D Advance Information EIA E and CCITT. The is a silicon gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications

More information

THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS

THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS Order this document by MC7800/D These voltage regulators are monolithic integrated circuits designed as fixed voltage regulators for a wide variety of applications including local, on card regulation.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC2R60 /D This device consists of a gallium arsenide infrared emitting diode optically coupled to a random phase triac driver circuit and a power triac.

More information

MOTOROLA. MAX810x. Semiconductor Components

MOTOROLA. MAX810x. Semiconductor Components MOTOROLA Semiconductor Components Order Number: MAX809/D Rev. 0, 06/1999 PLASTIC PACKAGE (TO 236) CASE 318 08 Features Precision CC Monitor for 3.0, 3.3, and 5.0 Supplies 140msec Guaranteed Minimum, Output

More information

MC34119 LOW POWER AUDIO AMPLIFIER

MC34119 LOW POWER AUDIO AMPLIFIER Order this document by MC349/D The MC349 is a low power audio amplifier intergrated circuit intended (primarily) for telephone applications, such as in speakerphones. It provides differential speaker outputs

More information

MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS

MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by BUH/D The BUH has an application specific state of art die designed for use in Watts HALOGEN electronic transformers and switchmode applications. This

More information

C QUAM ADVANCED MEDIUM VOLTAGE AM STEREO DECODER

C QUAM ADVANCED MEDIUM VOLTAGE AM STEREO DECODER Order this document by MC3022A/D The MC3022A is designed for home and automotive AM stereo radio applications. The circuits and functions included in the design allow implementation of a full featured

More information

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance

More information

CMOS Micro-Power Comparator plus Voltage Follower

CMOS Micro-Power Comparator plus Voltage Follower Freescale Semiconductor Technical Data Rev 2, 05/2005 CMOS Micro-Power Comparator plus Voltage Follower The is an analog building block consisting of a very-high input impedance comparator. The voltage

More information

Integrated Power Stage for 3.0 hp Motor Drives

Integrated Power Stage for 3.0 hp Motor Drives Беларусь г.минск тел./факс 8(17)2-6-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM7B3A6B/D Integrated Power Stage

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications

More information

LOW POWER FM TRANSMITTER SYSTEM

LOW POWER FM TRANSMITTER SYSTEM Order this document by MC28/D MC28 is a onechip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. BCD DECADE/MODULO BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS The SN54/ 74LS8 and SN54/ 74LS9 are fully synchronous 4-stage up/down counters featuring a preset capability for programmable operation, carry

More information

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366 UNIVERSAL 4-BIT SHIFT REGISTER The SN54 / 74LS95A is a high speed 4-Bit Shift Register offering typical shift frequencies of 39 MHz. It is useful for a wide variety of register and counting applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX4250/D The Motorola MPX4250 series Manifold Absolute Pressure (MAP) sensor for turbo boost engine control is designed to sense absolute air pressure

More information

Designer s Data Sheet TMOS E FET. High Energy Power FET

Designer s Data Sheet TMOS E FET. High Energy Power FET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2NEZL/D Designer s Data Sheet TMOS E FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. PRESETTABLE BCD/DECADE UP/DOWN COUNTER PRESETTABLE 4-BIT BINARY UP/DOWN COUNTER The SN54/74LS192 is an UP/DOWN BCD Decade (8421) Counter and the SN54/74LS193 is an UP/DOWN MODULO- Binary Counter. Separate

More information

VCEO(sus) 850 Vdc Emitter Base Voltage VCEV. 10 Vdc Collector Current Continuous. Adc Collector Current Peak (1) Adc Base Current Peak (1) IBM

VCEO(sus) 850 Vdc Emitter Base Voltage VCEV. 10 Vdc Collector Current Continuous. Adc Collector Current Peak (1) Adc Base Current Peak (1) IBM SEMICONDUCTOR TECHNICAL DATA Order this document by BUT4/D The BUT4 Darlington transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ/D The MJ and MJ3 Darlington transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

More information

RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA

RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MR75/D Current Capacity Comparable to Chassis Mounted Rectifiers Very High Surge Capacity Insulated Case Mechanical Characteristics: Case: Epoxy, Molded

More information

SEMICONDUCTOR APPLICATION NOTE

SEMICONDUCTOR APPLICATION NOTE SEMICONDUCTOR APPLICATION NOTE Order this document by AN/D Prepared by: Bill Lucas and Warren Schultz A plugin module that is part of a systems development tool set for pressure sensors is presented here.

More information

SEMICONDUCTOR APPLICATION NOTE

SEMICONDUCTOR APPLICATION NOTE SEMICONDUCTOR APPLICATION NOTE Order this document by AN1516/D Prepared by: JC Hamelain Toulouse Pressure Sensor Laboratory Semiconductor Products Sector, Toulouse, France INTRODUCTION Motorola Discrete

More information

Bipolar Linear/I 2 L TELEPHONE TONE RINGER BIPOLAR LINEAR/I2L

Bipolar Linear/I 2 L TELEPHONE TONE RINGER BIPOLAR LINEAR/I2L Order this document by M0/D Bipolar Linear/I L omplete Telephone Bell Replacement ircuit with Minimum External omponents On hip Diode Bridge and Transient Protection Direct Drive for Piezoelectric Transducers

More information

Silicon Bidirectional Thyristors

Silicon Bidirectional Thyristors Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to

More information

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LSTTL/ MSI SN54/ LS353 is a Dual 4-Input Multiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs.

More information

LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER

LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER nc. Order this document by MRFIC856/D The MRFIC856 is designed for dual band subscriber equipment applications at in the cellular (800 MHz) and PCS (900 MHz) bands. The device incorporates two phemt GaAs

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L. DUAL -OF-4 DECODER/ DEMULTIPLEXER The SN54/ LS55 and SN54/ LS56 are high speed Dual -of-4 Decoder/Demultiplexers. These devices have two decoders with common 2-bit Address inputs and separate gated Enable

More information

MJE13002 MJE13003 Unit

MJE13002 MJE13003 Unit SEMONDUCTOR TECHNAL DATA Order this document by MJE3/D These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited

More information