TVS Diode Arrays (SPA Devices) TVS Diode Arrays. Low Capacitance ESD Protection - SP3012 Series. (SPA Devices) SP3012. SP 3012 xx U T G V * *

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1 TVS Diode rrays (SP Devices) SP312 Series.5pF Diode rray RoHS Pb GRN Description Pinout The SP312 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (SD). These robust devices can safely absorb repetitive SD strikes above the maximum level specified in the IC international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal lines such as US3., HDMI, US2., and est. SP312 SP312-4UTG SP312-6UTG 14 *Pins 6, 7, 9, 1 are not internally connected but should be connected to the trace. *Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the opposite pin with the PC trace. Features SD, IC61-4-2, ±12kV contact, ±25kV air FT, IC61-4-4, 4 (t P =5/5ns) Lightning, IC61-4-5, 4 (t P =8/2μs) Low capacitance of.5pf (TYP) per I/O Low leakage current of 1.5μ (MX) at 5V Small form factor μdfn (JDC MO- 229) package provides flow through routing to simplify PC layout 7 1 pplications Functional lock Diagram Pin 1 Pin 2 Pin 4 Pin 5 SP312-4UTG LCD/PDP TVs xternal Storages DVD/lu-ray Players Desktops MP3/PMP Set Top oxes Smartphones Ultrabooks/Notebooks Digital Cameras GND (Pins 3,8) SP312-6UTG pplication xample for US3. US Port US Controller V US SSTX+ dditional Information SSTX- SSRX+ IC SSRX- GND D+ SP312-6UTG D- Life Support Note: Not Intended for Use in Life Support or Life Saving pplications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Signal GND

2 TLP Current () TVS Diode rrays (SP Devices) bsolute Maximum Ratings Parameter Value Units I PP Peak Current (t p =8/2μs) 4. T OP Operating Temperature 4 to 125 C T STOR Storage Temperature 55 to 15 C CUTION: Stresses above those listed in bsolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. lectrical Characteristics (T OP =25ºC) SP312 Parameter Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1µ 5. V Reverse Leakage Current I LK V R =5V, ny I/O to GND 1.5 µ I PP =1, t p =8/2µs, Fwd 6.6 V Clamp Voltage 1 V C I PP =2, t p =8/2µs, Fwd 7. V Dynamic Resistance R DYN (V C2 - V C1 ) / (I PP2 - I P ).4 Ω IC (Contact) ±12 kv SD Withstand Voltage 1 V SD IC (ir) ±25 kv Diode Capacitance 1 C I/O-GND Reverse ias=v, f=1 MHz.5 pf Diode Capacitance 1 C I/O-/O Reverse ias=v, f=1 MHz.3 pf Note: 1 Parameter is guaranteed by design and/or device characterization. Capacitance vs. ias Voltage 1. Insertion Loss (S21) I/O to GND -3 Capacitance (pf) ttenuation (d) ias Voltage (V) Frequency (MHz) Clamping Voltage vs. I PP Transmission Line Pulsing(TLP) Plot Clamp Voltage (V) Current () TLP Voltage (V)

3 Temperature TVS Diode rrays (SP Devices) Pulse Waveform Power Derating Curve Percent of I PP 11% 1% 9% 8% 7% 6% 5% 4% 3% 2% 1% % Time (μs) % of Rated Power or I PP mbient Temperature-T ( o C) SP312 Soldering Parameters Reflow Condition Pre Heat Pb Free assembly - Temperature Min (T s(min) ) 15 C - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 6 18 secs verage ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T S(max) to T L - Ramp-up Rate 3 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 6 15 seconds Peak Temperature (T P ) 26 +/-5 C Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 26 C T P T L T S(max) T S(min) 25 t S Preheat Ramp-up time to peak temperature Ordering Information t P t L Ramp-down Time Critical Zone TL to TP Part Number Package Marking Min. Order Qty. SP312-4UTG µdfn-1 V*4 3 SP312-6UTG µdfn-14 V*6 3 Product Characteristics Part Numbering System Lead Plating Lead Material Pre-Plated Frame Copper lloy TVS Diode rrays (SP Devices) SP 312 xx U T G G= Green Lead Coplanarity.4 inches (.12mm) Substitute Material Silicon ody Material Molded poxy Flammability UL 94 V- Series Number of Channels 4 = 4 channel 6 = 6 channel T= Tape & Reel Package µdfn-1 (2.5x1.mm) µdfn-14 (3.5x1.35mm) Notes : 1. ll dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. lo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI Part Marking System V * * Product Series V = SP312 ssembly Site Number of Channels 4 = 4 channel 6 = 6 channel

4 TVS Diode rrays (SP Devices) pplication Information Signal Integrity of High-Speed Data Interfaces Figure 1: PC Layout of the SP312-6UTG for US 3. dding external SD protection to a high-speed data port is not trivial for a variety of reasons. 1. SD protection devices will add parasitic capacitance to each data line from line to GND and line to line causing impedance mismatches between the differential pairs. This ultimately affects the signal eye-diagram and whether or not the transceiver can distinguish a 1 from a. 2. SD devices should be placed as close as possible to the port being protected to maximize their effect (i.e. clamping capability) and minimize the effect that PC trace inductance can have during an SD transient. Depending on the package size and pinout this could be challenging and the bigger the package, the larger the land pattern must be, which adds more parasitic capacitance. 3. Stub traces can add another element of discontinuity adversely affecting signal integrity so SD protection is best employed when it s overlaid on the data lines or when the signals can simply pass underneath the device. Taking all of this into account Littelfuse developed the SP312 Series which was designed specifically for protection of high-speed data ports such as HDMI 1.3/1.4 and US 3.. They present less than.5pf from line to GND and only.3pf from line to line minimizing impedance mismatch between the differential pairs. Furthermore, the SP312 is rated up to ±12kV (contact discharge) which far exceeds the maximum requirement of the IC standard. There are two options available (4 channel and 6 channel) and both are housed in leadless µdfn packages so the data lines can pass directly underneath the device to reduce discontinuities and maintain signal integrity. Figure 2 shows the US 3. eye diagram that resulted from the PC layout above with the SP312-6UTG soldered on the landing pattern. 5-5 Wfrms:5 ase: 27. ns Scale:33. ps/div Figure 2: US 3. ye Diagram with the SP312-6UTG Using a similar layout as above, Figure 3 shows the eye diagram that resulted using the SP312-4UTG to protect the Super-Speed data lines and the SP33-2UTG to protect the legacy data pair. J1 U1 US 3. ye Diagram Data Figure 1 shows the layout used for the SP312-6UTG in a US 3. application. The traces routed toward the top are the two legacy US 2. lines (D+/D-) that run at the slower speed of 48Mbps and therefore are not as critical as the 5Gbps Super-Speed traces. 5-5 Wfrms:85 ase: 27. ns Scale:33. ps/div Figure 3: US 3. ye Diagram with the SP312-4UTG

5 TVS Diode rrays (SP Devices) Top View D Package Dimensions µdfn-1 (2.5x1.x.5mm) Seating Plane.5 C C L Top View b D Side View b1.1 M C.5 M C ottom View R.125 e P 1 2xR.75mm (7x) Recomended 3.5 C Side View.5 C 1 3 Package µdfn-1 (2.5x1.x.5mm) Seating Plane JDC MO-229 C b b1 Min Nom Max Min.1Nom M C Max M C Ref.5 Ref ottom View b b R D L e.5 SC.2 SC L xR.75mm (7x) e Dimensions Inch Millimeter C (.34) (.875) G.8.2 P X.8.2 X Y Y1 (.61) (1.55) Z Z (C) Z (C) X Recomended G X G P P X1 lternative X1 Y (Y1) Y (Y1).5 C SP312 mbossed Carrier Tape & Reel YSpecification µdfn-1 Z (C) G (Y1) P2 X K D1 P D X1 5º Max F W T 5º Max User Feeding Direction Pin 1 Location Package µdfn-1 (2.5x1.x.5mm) 1.3 +/ /-.1 D Ø D1 Ø /-.1 F 3.5 +/-.5 K.65 +/-.1 P 4. +/ /-.1 P2 2. +/-.5 T.254 +/-.2 W /-.1

6 TVS Diode rrays (SP Devices) Package Dimensions µdfn-14 (3.5x1.35x.5mm) Top View D µdfn-14 (3.5x1.35x.5mm) JDC MO-229 PIN 1 Index rea Seating Plane C Side View b ottom View 1 2 Pin 1 Identification Chamfer.1X45º Recomended Min Nom Max Min Nom Max Ref.8 Ref b D D e.5 SC.2 SC L Notes: 1. Dimension and tolerancing comform to SM Y14.5M Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact. Dimensions Millimeter Min Nom Max Min Nom Max D b L e.5 typ.2 typ s s mbossed Carrier Tape & Reel Specification µdfn-14 P2 W P D1 D F K User Feeding Direction Pin 1 Location T / /-.1 D D1 Ø /-.1 F 5.5 +/-.5 K.68 +/-.1 P 2. +/ /-.1 P2 4. +/-.1 T.28 +/-.2 W /-.1