uclamp3311p Low Voltage µclamp TM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClamp TM Description Features Mechanical Characteristics

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1 - MicroClamp TM Description The µclamp TM series of Transient Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications where low operating voltage is vital. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The µclamp TM 33P is constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The µclamp TM 33P is in an 2-pin, RoHS/WEEE compliant, SLP06P2 package. It measures.0 x 0.6 x 0.5. The leads are spaced at a pitch of 0.65 and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD iunity requirements of IEC , Level 4 (±5kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. uclamp33p Low µclamp TM for ESD and CDE Protection Features Transient protection for data lines to IEC (ESD) ±5kV (air), ±8kV (contact) IEC (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small package (.0 x 0.6 x 0.5) Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics SLP06P2 package RoHS/WEEE Compliant Nominal Dimensions:.0 x 0.6 x 0.5 Lead Finish: NiPdAu Molding compound flaability rating: UL 94V-0 Marking : Marking code, cathode band Packaging : Tape and Reel Applications Cellular Handsets & Accessories Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Dimensions Schematic & PIN Configuration Revision 08/22/2007 Maximum Dimensions () SLP06P2 (Bottom View)

2 Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20µs) M aximum Peak Pulse Current ( tp = 8/20µs) P pk 90 Watts I pp 5 Amps ESD per IEC ESD per IEC (Air) (Contact) V ESD +/- 25 +/- 20 kv Operating Temperature T J -40 to +85 C Storage Temperature T STG 55 to C Electrical Characteristics (T=25 o C) Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off V WM R. 3 3 V Punch-Through Snap-Back V PT V SB I PT I SB = 2µ A 3. 5 V = 50mA 2. 8 V Reverse Leakage Current I R V RWM = 3.3V µ A Clamping V C I PP = A, tp = 8/20µ s 8 V Clamping V C I PP = 5A, tp = 8/20µ s 8 V I/O pin to Gnd Junction Capacitance C j = 0V, f = MHz V R 2 5 pf V R I/O pin to Gnd = 3.3V, f = MHz pf 2007 Semtech Corp. 2

3 Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - P PP (kw) Pulse Duration - tp (us) % of Rated Power or I PP Ambient Temperature - T A ( o C) Clamping vs. Peak Pulse Current Normalized Capacitance vs. Reverse Clamping - V C (V) Waveform 4 Parameters: 2 tr = 8µs td = 20µs Peak Pulse Current - I PP (A) Insertion Loss S2 CJ(VR) / CJ(VR=0) f = MHz Reverse - V R (V) CH S2 LOG 6 db / REF 0 db : db MHz 0 db 2: db 900 MHz -6 db -2 db -8 db : db.8 GHz 4: db 2.5 GHz -24 db -30 db -36 db MHz MHz 0 MHz GHz 3 GHz START. 030 MHz STOP MHz 2007 Semtech Corp. 3

4 Applications Information Device Connection Options Device Schematic & Pin Configuration The µclamp33p is designed to protect one data line operating up to 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will turn on when the line voltage exceeds 3.5 volts. The device is bidirectional and may be used on lines where the signal polarity is above and below ground. These devices are not recoended for use on dc power supply lines due to their snap-back voltage characteristic. EPD TVS Characteristics These devices are constructed using Semtech s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 3.3V while maintaining excellent electrical characteristics. EPD TVS IV Characteristic Curve IPP The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will punch-through to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. V F I SB I PT I R V RWM VSB VPT V C I F Circuit Board Layout Recoendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recoended: Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible Semtech Corp. 4

5 Applications Information - Spice Model uclamp33p Spice Model uclamp33p Spice Parameters Parameter IS BV VJ RS IBV CJO TT U nit D (TVS) D2 (TVS) Amp E-20 E-20 Volt Volt Ohm.. Farad 20E-2 20E-2 Amp E-3 E-3 sec 2.54E E- 9 M N --.. EG ev Semtech Corp. 5

6 Outline Drawing - SLP06P2 A D B aaa C A TOP VIEW E A C SEATING PLANE DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A b D E e.026 BSC 0.65 BSC L R N 2 2 aaa bbb PIN ID bxn bbb C A B R e 2x L BOTTOM VIEW NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP06P2 (C) G Z X Y DIMENSIONS DIM INCHES MILLIMETERS C (.033) (0.85) G X Y Z NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET Semtech Corp. 6

7 Marking Code X PIN ID Ordering Information Part Number uclamp33p.tct Working Qty per Reel Reel Size 3.3V 3,000 7 Inch Notes: ) This is a lead-free, RoHS/WEEE compliant product MicroClamp, uclamp and µclamp are marks of Semtech Corporation Tape and Reel Specification A0 B0 K / / /-0. Tape Width B, (Max) D D E F P P0 P2 T W (.65) ( ) 0.4 ±0.25 (.03).750±. (.069±.004) 3.5±0.05 (.38±.002) 4.0±0. (.57±.00-4) 4.0±0. (.57±.00-4) 2.0±0.05 (.079±.002) 0.254±0.02 (.06) (.32±.02) Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 9302 Phone: (805)498-2 FAX (805) Semtech Corp. 7

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