SP3130 Series 0.3pF 10KV Bidirectional Discrete TVS

Transcription

1 SP313 Series.3p 1KV Bidirectional Discrete VS RoHS Pb GRN Description he SP313 includes back-to-back VS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (SD). hese robust diodes can safely absorb repetitive SD strikes up to the maximum level specified in the IC international standard without performance degradation. he back-to back configuration provides symmetrical SD protection for data lines when AC signals are present. Pinout 21 lipchip 1 2 SOD882 eatures SD protection of ±1kV contact discharge, ±15kV air discharge, (IC61-4-2) protection, IC61-4-4, 4A (tp=5/5ns) Lightning Protection, IC nd edition, 2A (t p =8/2µs) Low leakage current of 5nA (max) at 28V Space efficient 21 and 42 footprint Halogen free, Lead free and RoHS compliant 1 2 Low capacitance V R =V unctional Block Diagram Applications ablets Ultrabook ereader Smart Phones Digital Cameras MP3/ PMP Set op Boxes Portable Medical NC and elica

2 Absolute Maximum Ratings Parameter Value Units Peak Current (t p =8/2μs) 2. A OP Operating emperature -4 to 125 C SOR Storage emperature -55 to 15 C hermal Information Parameter Rating Units Storage emperature Range -55 to 15 C Maximum Lead emperature (Soldering 2-4s) 26 C CAUION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. his is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. lectrical Characteristics ( OP =25ºC) Parameter est Conditions Min yp Max Units Reverse Standoff Voltage V RM 28 V Reverse Leakage Current I LAK V R =28V with 1pin at GND 1 5 na Clamp Voltage 1 V C =1A, t p =8/2µs, wd V =2A, t p =8/2µs, wd V SD ithstand Voltage 1 V SD IC (Contact) ±1 kv IC (Air) ±15 kv Dynamic Resistance 2 R DYN LP, t P =1ns, I/O to GND 1. Ω Diode Capacitance 1 C I/O-I/O Reverse Bias=V, f=1 MHz.3.45 p Note: 1. Parameter is guaranteed by design and/or device characterization. 2 ransmission Line Pulse (LP) with 1ns width, 2ns rise time, and average window t1=7ns to t2= 9ns 8/2μS Pulse aveform Capacitance vs. Reverse Bias 11% 1%.5 Percent of 9% 8% 7% 6% 5% 4% 3% Capacitance (p) % 1%.1 % ime (μs) Bias Voltage (V)

3 emperature ransmission Line Pulsing (LP) Plot Insertion Loss (S21) LP Current (A) LP Voltage (V) Attenuation (db) requency (MHz) Soldering Parameters Reflow Condition Pb ree assembly - emperature Min ( s(min) ) 15 C Pre Heat - emperature Max ( s(max) ) 2 C - ime (min to max) (t s ) 6 18 secs Average ramp up rate (Liquidus) emp ( L ) to peak 3 C/second max S(max) to L - Ramp-up Rate 3 C/second max - emperature ( L ) (Liquidus) 217 C Reflow - emperature (t L ) 6 15 seconds Peak emperature ( P ) 26 +/-5 C ime within 5 C of actual peak emperature (t p ) 2 4 seconds Ramp-down Rate 6 C/second max ime 25 C to peak emperature ( P ) 8 minutes Max. Do not exceed 26 C Part Numbering System VS Diode Arrays (SPA Diodes) Series Number of Channels SP x G G= Green = ape & Reel Package : 21 lipchip : SOD882 P L S(max) S(min) 25 t S Preheat Ramp-up time to peak temperature Product Characteristics of 21 lipchip Lead Plating Lead Material Lead Coplanarity Substrate material Body Material Product Characteristics of SOD882 Lead Plating Lead Material Lead Coplanarity Substrate material t P t L Pre-Plated rame Copper Alloy.4 inches(.12mm) Body Material Molded poxy lammability UL 94 V- Ramp-down ime Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI Sn Copper 6µm(max) Critical Zone L to P

4 Ordering Information Part Number Package Marking Min. Order Qty. Packaging Option P/P1 Packaging Specification SP313-1G 21 lipchip 1 ape & Reel 8mm tape/7 reel 4mm/2mm IA RS-481 SP313-1G SOD882 1 ape & Reel 8mm tape/7 reel 4mm/2mm IA RS-481 Package Dimensions 21 lipchip D D1 21 lipchip Millimeters Inches Min Max Min Max 1 D op View D2 Bottom View D D2.4 BSC.157 BSC A A2 A A Side View A A Recommended Soldering Pad Layout (mm) mbossed Carrier ape & Reel Specification 21 lipchip P1 P P2 D Millimeters A.41+/-.3 B.7+/-.3 D ø D1 ø.2+/ / /-.5 K.38+/-.3 P 4.+/-.1 D1 Device Orientationinape P1 2.+/-.5 P2 2.+/ / /-.2 A K B

5 Package Dimensions SOD882 A Package SOD882 B JDC Millimeters MO-236 Inches op View c e Bottom View Min Max Min Max A B C SP e.65 BSC.26 BSC Side View Recommended Soldering Pad Layout (mm) mbossed Carrier ape & Reel Specification SOD882 P P2 Φ2: 1.55±.5 ape Dimensions op Cover ape 3 R A Millimetres Min Max A B B K.5.6 K P1 Φ:.4± Reel Size 7 Inch 1 S P P P R M N K H Reel Dimensions (Size Φ178) Millimetres Min Max M N Device Orientationinape H S K R