SP6002 Series 15pF 15kV EMI Filter Array

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1 TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - 15pF 15kV EMI Filter Array RoHS Pb GREEN Description The Littelfuse SP6002 SPA series integrates 4, 6 and 8 EMI filters (C-R-C) into a small, low-profile μdfn package with each filter providing greater than -30dB attenuation at 800MHz. Additionally, each I/O is capable of shunting ±15kV ESD strikes (IEC , contact discharge) away from sensitive electronic components. The performance of this small, slim design makes it extremely suitable for mobile handsets, PDAs and notebook computers. SP6002 Features Pinout μdfn frequencies from 800MHz to 3GHz attenuation (TYP) at 800MHz ±15kV contact, ±30kV air (JEDEC MO-229) package (TYP 0.5mm height) SP UTG-1 Applications μdfn SP UTG portable electronics interfaces for handsets portable electronics device μdfn SP UTG-1 9 Application Example Functional Block Diagram Input LCD Module Controller SP UTG SP UTG SP UTG Outside World SP UTG (μdfn) D1 D3 D Signal Ground Please refer to for current information.

2 TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - Absolute Maximum Ratings Symbol Parameter Value Units T OP Operating Temperature - C T STOR Storage Temperature - to 150 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range - to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T OP =25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 5.0 V Breakdown Voltage V BR I R =1mA 7.0 V Reverse Leakage Current I V RWM =5V μa Resistance R A I R =10mA Ω Diode Capacitance 1,2 C D V R =2.5V,f=1MHz 15 pf Line Capacitance 1,2 C L V R =2.5V,f=1MHz pf IEC (Contact Discharge) ±15 kv ESD Withstand Voltage 1 V ESD IEC (Air Discharge) ±30 kv Above this frequency, appreciable Cutoff Frequency 3 F -3dB 100 MHz attenutation occurs Notes: 1 Parameter is guaranteed by design and/or device characterization. 2 Total line capacitance is two times the diode capacitance (C D ). 3 50Ω source and 50Ω load termination Insertion Loss (S21) Inseron Loss(dB) Analog Crosstalk (S41) Inseron Loss(dB) Frequency (MHz) Frequency (MHz) Please refer to for current information.

3 Temperature TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - Line Capacitance vs. DC Bias Soldering Parameters 50 Reflow Condition Pb Free assembly Capacitance (pf) DC Bias (V) Product Characteristics Lead Plating Pre-Plated Frame - Temperature Min (T s(min) ) 150 C Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T S(max) to T L - Ramp-up Rate 3 C/second max Reflow - Temperature (T L ) (Liquidus) 217 C - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 260 C SP6002 Lead Material Copper Alloy Lead Coplanarity Substitute Material 04 inches (0.102mm) Silicon T P Ramp-up t P Critical Zone TL to TP Body Material Molded Epoxy T L T S(max) t L Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI T S(min) 25 t S Preheat time to peak temperature Ramp-down Time Part Numbering System SP 6002 ** U T G -1 TVS Diode Arrays (SPA ) Series Number of Channels 04 = 4 Channel μdfn = 6 Channel μdfn = 8 Channel μdfn-16 G= Green T= Tape & Reel Package μdfn-08 (1.7x1.35mm) μdfn-12 (2.5x1.35mm) μdfn-16 (3.3x1.35mm) Ordering Information Part Number Package Size Marking Min. Order Qty. SP UTG-1 μdfn x1.35mm C SP UTG-1 μdfn x1.35mm C SP UTG-1 μdfn x1.35mm C128YYWW 3000 Please refer to for current information.

4 TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - Package Dimensions μdfn-08 E D Pin 1 Marking Pin 1 Locator r 8X M 0.10 C A B e C0.2 PAD b E2 μdfn-08 JEDEC MO-229 Millimeters Inches Min Max Min Max A A A REF 6 REF Top View K Bottom View L b D E C E e BSC BSC C K L A1 Side View A A3 Package Dimensions μdfn-12 E D Pin 1 Marking 5 6 Top View Pin 1 Locator e 12X 0.10 C A B M C0.2 PAD Bottom View b L E2 μdfn-12 JEDEC MO-229 Millimeters Inches Min Max Min Max A A A REF 4 REF b D C E C E e BSC BSC Side View A1 A A3 L Please refer to for current information.

5 TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - Package Dimensions μdfn-16 μdfn-16 E C C D Pin 1 Marking 5 Top View A1 A A3 6 Side View Pin 1 Locator e C0.2 PAD M 0.10 C A B Bottom View b L E 2 JEDEC MO-229 Millimeters Inches Min Max Min Max A A A REF 0.04 REF b D E E e 0.40 BSC BSC L SP6002 Embossed Carrier Tape & Reel Specification μdfn ± ± W 4.00± ±0.05 ø1.55± ± ±0.10 ø13.22 ø70.55 ø ø ø1.00± ±0.05 A0 0.65±0.05 K0 1.85±0.10 B0 ø58.11 ø15.57 T=0.20± Please refer to for current information.

6 TVS Diode Arrays (SPA D) ESD and EMI Filter Devices - Embossed Carrier Tape & Reel Specification μdfn ± ± ± ±0.05 ø1.50± ± ± ø13.22 ø70.55 ø ø ø1.00± ± ±0.10 A0 12º MAX 0.80±0.10 K0 2.80±0.10 B0 12º MAX ø58.11 ø Embossed Carrier Tape & Reel Specification μdfn ± ± ±0.05 ø1.50± ± ø ± A0 W 0.70±0.05 K0 ø58.11 ø13.22 ø70.55 ø ø ø1.00± ±0.05 B0 T=0.20± ±0.10 Please refer to for current information.

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