Wide Supply Range, Rail-to-Rail Output Instrumentation Amplifier AD8226

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1 Wide Supply Range, Rail-to-Rail Output Instrumentation Amplifier FEATURES Gain set with 1 external resistor Gain range: 1 to 1 Input voltage goes below ground Inputs protected beyond supplies Very wide power supply range Single supply:. V to 36 V Dual supplies: ±1.35 V to ±18 V Bandwidth (G = 1): 1.5 MHz CMRR (G = 1): 9 db minimum for BR models Input noise: nv/ Hz Typical supply current: 35 µa Specified temperature: 4 C to +15 C 8-lead SOIC and MSOP packages APPLICATIONS Industrial process controls Bridge amplifiers Medical instrumentation Portable data acquisition Multichannel systems PIN CONFIGURATION IN 1 R G R G 3 +IN 4 TOP VIEW (Not to Scale) Figure V OUT Table 1. Instrumentation Amplifiers by Category 1 General Purpose Zero Drift Military Grade Low Power High Speed PGA AD8 AD831 AD6 AD67 AD85 AD81 AD89 AD61 AD63 AD851 AD8 AD893 AD54 AD83 AD853 AD84 AD8553 AD56 AD88 AD8556 AD64 AD87 AD895 AD8557 AD835/ AD Visit for the latest instrumentation amplifiers. GENERAL DESCRIPTION The is a low cost, wide supply range instrumentation amplifier that requires only one external resistor to set any gain between 1 and 1. The is designed to work with a variety of signal voltages. A wide input range and rail-to-rail output allow the signal to make full use of the supply rails. Because the input range also includes the ability to go below the negative supply, small signals near ground can be amplified without requiring dual supplies. The operates on supplies ranging from ±1.35 V to ±18 V for dual supplies and. V to 36 V for single supply. The robust inputs are designed to connect to realworld sensors. In addition to its wide operating range, the can handle voltages beyond the rails. For example, with a ±5 V supply, the part is guaranteed to withstand ±35 V at the input with no damage. Minimum as well as maximum input bias currents are specified to facilitate open wire detection. The is perfect for multichannel, space-constrained industrial applications. Unlike other low cost, low power instrumentation amplifiers, the is designed with a minimum gain of 1 and can easily handle ±1 V signals. With its MSOP package and 15 C temperature rating, the thrives in tightly packed, zero airflow designs. The is available in 8-lead MSOP and SOIC packages, and is fully specified for 4 C to +15 C operation. For a device with a similar package and performance as the but with gain settable from 5 to 1, consider using the AD87. Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA 6-916, U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.

2 TABLE OF CONTENTS Features... 1 Applications... 1 Pin Configuration... 1 General Description... 1 Revision History... Specifications... 3 Absolute Maximum Ratings... 7 Thermal Resistance... 7 ESD Caution... 7 Pin Configuration and Function Descriptions... 8 Typical Performance Characteristics... 9 Theory of Operation Architecture Gain Selection Reference Terminal... Input Voltage Range... Layout... Input Bias Current Return Path... 1 Input Protection... Radio Frequency Interference (RFI)... Applications Information... 3 Differential Drive... 3 Precision Strain Gage... 4 Driving an ADC... 4 Outline Dimensions... 5 Ordering Guide... 5 REVISION HISTORY 3/11 Rev. A to Rev. B Added AD835/AD836 to Table Changes to Endnote 1, Table... 4 Change Endnote Placement in Total Noise Equation, Table Added G > 1 BRZ, BRMZ Max Parameter... 6 Changes to Endnote 1, Table Changes to Figure Changes to Figure Changes to Figure Updated Outline Dimensions /9 Rev. to Rev. A Added BRZ and BRM Models... Universal Changes to Features Section... 1 Changes to Table Changes to General Description Section... 1 Changes to Gain vs. Temperature Parameter, Output Parameter, and Operating Range Parameter, Table... 4 Changes to Common-Mode Rejection Ratio (CMRR) Parameter and to Input Offset, V OSO, Average Temperature Coefficient Parameter, Table Changes to Gain vs. Temperature Parameter, Table Changes to Gain Selection Section Changes to Reference Terminal Section and Input Voltage Range Section... Changes to Ordering Guide /9 Revision : Initial Version Rev. B Page of 8

3 SPECIFICATIONS = +15 V, V S = 15 V, V = V, T A = 5 C, G = 1, R L = 1 kω, specifications referred to input, unless otherwise noted. Table. Rev. B Page 3 of 8 ARZ, ARMZ BRZ, BRMZ Parameter Conditions Min Typ Max Min Typ Max Unit COMMON-MODE REJECTION RATIO (CMRR) V CM = 1 V to +1 V CMRR with DC to 6 Hz G = db G = db G = db G = db CMRR with DC at 5 khz G = db G = db G = db G = db NOISE Total noise: e N = (e NI + (e NO /G) ) Voltage Noise 1 khz Input Voltage Noise, e NI 4 4 nv/ Hz Output Voltage Noise, e NO nv/ Hz RTI f =.1 Hz to 1 Hz G = 1 µv p-p G = µv p-p G = 1 to µv p-p Current Noise f = 1 khz 1 1 fa/ Hz f =.1 Hz to 1 Hz 3 3 pa p-p VOLTAGE OFFSET Total offset voltage: V OS = V OSI + (V OSO /G) Input Offset, V OSI V S = ±5 V to ±15 V 1 µv Average Temperature Coefficient T A = 4 C to +15 C µv/ C Output Offset, V OSO V S = ±5 V to ±15 V 1 5 µv Average Temperature Coefficient T A = 4 C to +15 C µv/ C Offset RTI vs. Supply (PSR) V S = ±5 V to ±15 V G = db G = db G = db G = db INPUT CURRENT Input Bias Current 1 T A = +5 C na T A = +15 C na T A = 4 C na Average Temperature Coefficient T A = 4 C to +15 C 7 7 pa/ C Input Offset Current T A = +5 C na T A = +15 C na T A = 4 C.5 na Average Temperature Coefficient T A = 4 C to +15 C 5 5 pa/ C ERENCE INPUT R IN 1 1 kω I IN 7 7 µa Voltage Range V S V S V Reference Gain to Output 1 1 V/V Reference Gain Error.1.1 % DYNAMIC RESPONSE Small-Signal 3 db Bandwidth G = khz G = khz G = 1 khz G = 1 khz

4 ARZ, ARMZ BRZ, BRMZ Parameter Conditions Min Typ Max Min Typ Max Unit Settling Time.1% 1 V step G = µs G = µs G = µs G = µs Slew Rate G = V/µs G = 5 to V/µs GAIN G = 1 + (49.4 kω/r G ) Gain Range V/V Gain Error V OUT ±1 V G = % G = 5 to % Gain Nonlinearity V OUT = 1 V to +1 V G = 1 to 1 R L kω 1 1 ppm G = 1 R L kω ppm G = 1 R L kω ppm Gain vs. Temperature G = 1 T A = 4 C to +85 C 5 1 ppm/ C T A = 85 C to 15 C 5 ppm/ C G > 1 T A = 4 C to +15 C 1 1 ppm/ C INPUT V S = ±1.35 V to +36 V Input Impedance Differential.8.8 GΩ pf Common Mode.4.4 GΩ pf Input Operating Voltage Range 3 T A = +5 C V S.1.8 V S.1.8 V T A = +15 C V S.5.6 V S.5.6 V T A = 4 C V S.15.9 V S.15.9 V Input Overvoltage Range T A = 4 C to +15 C 4 V S V S + 4 V OUTPUT Output Swing R L = kω to Ground T A = +5 C V S V S V T A = +15 C V S V S V T A = 4 C V S V S V R L = 1 kω to Ground T A = +5 C V S +.. V S +.. V T A = +15 C V S V S V T A = 4 C V S +.. V S +.. V R L = 1 kω to Ground T A = 4 C to +15 C V S V S V Short-Circuit Current ma POWER SUPPLY Operating Range Dual-supply operation ±1.35 ±18 ±1.35 ±18 V Quiescent Current T A = +5 C µa T A = 4 C µa T A = +85 C µa T A = +15 C µa TEMPERATURE RANGE C 1 The input stage uses pnp transistors; therefore, input bias current always flows out of the part. The values specified for G > 1 do not include the effects of the external gain-setting resistor, R G. 3 Input voltage range of the input stage. The input range depends on the common-mode voltage, the differential voltage, the gain, and the reference voltage. See the Input Voltage Range section for more information. Rev. B Page 4 of 8

5 =.7 V, V S = V, V = V, T A = 5 C, G = 1, R L = 1 kω, specifications referred to input, unless otherwise noted. Table 3. ARZ, ARMZ BRZ, BRMZ Parameter Conditions Min Typ Max Min Typ Max Unit COMMON-MODE REJECTION RATIO (CMRR) V CM = V to 1.7 V CMRR with DC to 6 Hz G = db G = db G = db G = db CMRR with DC at 5 khz G = db G = db G = db G = db NOISE Total noise: e N = (e NI + (e NO /G) ) Voltage Noise 1 khz Input Voltage Noise, e NI 4 4 nv/ Hz Output Voltage Noise, e NO nv/ Hz RTI f =.1 Hz to 1 Hz G = 1.. µv p-p G = µv p-p G = 1 to µv p-p Current Noise f = 1 khz 1 1 fa/ Hz f =.1 Hz to 1 Hz 3 3 pa p-p VOLTAGE OFFSET Total offset voltage: V OS = V OSI + (V OSO /G) Input Offset, V OSI 1 µv Average Temperature Coefficient T A = 4 C to +15 C µv/ C Output Offset, V OSO 1 5 µv Average Temperature Coefficient T A = 4 C to +15 C µv/ C Offset RTI vs. Supply (PSR) V S = V to 1.7 V G = db G = db G = db G = db INPUT CURRENT Input Bias Current 1 T A = +5 C na T A = +15 C na T A = 4 C na Average Temperature Coefficient T A = 4 C to +15 C 7 7 pa/ C Input Offset Current T A = +5 C na T A = +15 C na T A = 4 C 1.1 na Average Temperature Coefficient T A = 4 C to +15 C 5 5 pa/ C ERENCE INPUT R IN 1 1 kω I IN 7 7 µa Voltage Range V S V S V Reference Gain to Output 1 1 V/V Reference Gain Error.1.1 % DYNAMIC RESPONSE Small-Signal 3 db Bandwidth G = khz G = khz G = 1 khz G = 1 khz Rev. B Page 5 of 8

6 ARZ, ARMZ BRZ, BRMZ Parameter Conditions Min Typ Max Min Typ Max Unit Settling Time.1% V step G = µs G = µs G = µs G = µs Slew Rate G = V/µs G = 5 to V/µs GAIN G = 1 + (49.4 kω/r G ) Gain Range V/V Gain Error G = 1 V OUT =.8 V to 1.8 V.4.1% % G = 5 to 1 V OUT =. V to.5 V.3.1% % Gain vs. Temperature G = 1 T A = 4 C to +85 C 5 1 ppm/ C T A = +85 C to +15 C 5 ppm/ C G > 1 T A = 4 C to +15 C 1 1 ppm/ C INPUT V S = V, =.7 V to 36 V Input Impedance Differential.8.8 GΩ pf Common Mode.4.4 GΩ pf Input Operating Voltage Range 3 T A = +5 C V T A = 4 C V T A = +15 C V Input Overvoltage Range T A = 4 C to +15 C 4 V S V S + 4 OUTPUT Output Swing R L = 1 kω to 1.35 V, T A = 4 C to +15 C V Short-Circuit Current ma POWER SUPPLY Operating Range Single-supply operation V Quiescent Current T A = +5 C, V S = V, =.7 V µa T A = 4 C, V S = V, =.7 V µa T A = +85 C, V S = V, =.7 V µa T A = +15 C, V S = V, =.7 V µa TEMPERATURE RANGE C 1 Input stage uses pnp transistors; therefore, input bias current always flows out of the part. The values specified for G > 1 do not include the effects of the external gain-setting resistor, R G. 3 Input voltage range of the input stage. The input range depends on the common-mode voltage, the differential voltage, the gain, and the reference voltage. See the Input Voltage Range section for more information. Rev. B Page 6 of 8

7 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage ±18 V Output Short-Circuit Current Indefinite Maximum Voltage at IN or +IN V S + 4 V Minimum Voltage at IN or +IN 4 V Voltage ±V S Storage Temperature Range 65 C to +15 C Specified Temperature Range 4 C to +15 C Maximum Junction Temperature 14 C ESD Human Body Model 1.5 kv Charge Device Model 1.5 kv Machine Model 1 V THERMAL RESISTANCE θ JA is specified for a device in free air. Table 5. Thermal Resistance Package θ JA Unit 8-Lead MSOP, 4-Layer JEDEC Board 135 C/W 8-Lead SOIC, 4-Layer JEDEC Board 11 C/W ESD CAUTION Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. B Page 7 of 8

8 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 8 R G 7 V OUT R G 3 6 +IN 4 5 TOP VIEW (Not to Scale) Figure. Pin Configuration 736- Table 6. Pin Function Descriptions Pin No. Mnemonic Description 1 IN Negative Input., 3 R G Gain-Setting Pins. Place a gain resistor between these two pins. 4 +IN Positive Input. 5 V S Negative Supply. 6 Reference. This pin must be driven by low impedance. 7 V OUT Output. 8 Positive Supply. Rev. B Page 8 of 8

9 TYPICAL PERFORMANCE CHARACTERISTICS T = 5 C, V S = ±15 V, R L = 1 kω, unless otherwise noted. 16 N: 3 MEAN: SD: MEAN:.41 SD: HITS 1 8 HITS V ±15V (µv) V OSI DRIFT (µv) Figure 3. Typical Distribution of Output Offset Voltage Figure 6. Typical Distribution of Input Offset Voltage Drift, G = 1 4 MEAN:.57 SD: MEAN: SD: HITS 1 HITS V OSO DRIFT (µv) POSITIVE I BIAS ±15V (na) Figure 4. Typical Distribution of Output Offset Voltage Drift Figure 7. Typical Distribution of Input Bias Current 35 MEAN: SD: MEAN:.3 SD: HITS 15 HITS V R G ±15V (µv) V ±15V (na) Figure 5. Typical Distribution of Input Offset Voltage Figure 8. Typical Distribution of Input Offset Current Rev. B Page 9 of 8

10 COMMON-MODE VOLTAGE (V) V, +.V +.V,.4V +.V, +1.3V +.V, +.3V +1.35V, +1.9V V = V +1.35V,.4V +.4V, +.8V V = +1.35V +.68V, +1.V +.68V, +.3V Figure 9. Input Common-Mode Voltage vs. Output Voltage, Single Supply, V S = +.7 V, G = COMMON-MODE VOLTAGE (V) V, +.V +.V, +1.3V +.V, +.4V +1.35V, +1.9V V = V V = +1.35V +.4V, +.8V +.67V, +1.3V +.67V, +.4V +.V,.3V +1.35,.3V Figure 1. Input Common-Mode Voltage vs. Output Voltage, Single Supply, V S = +.7 V, G = COMMON-MODE VOLTAGE (V) V, +4.3V +.V, +3.V +.V, +.8V +.V,.4V +.5V, +4.3V V = V +.5V,.4V +4.98V, +3.V +4.7V, +1.9V V = +1.35V +4.98V, +.8V Figure 1. Input Common-Mode Voltage vs. Output Voltage, Single Supply, V S = +5 V, G = COMMON-MODE VOLTAGE (V) V, +4.3V +.V, +3.V +.V, +.7V +.V,.3V +.5V, +4.V V = V +.5V,.3.V +4.7V, +1.9V V = +.5V +4.96V, +3.V +4.96V, +.7V Figure 13. Input Common-Mode Voltage vs. Output Voltage, Single Supply, V S = +5 V, G = COMMON-MODE VOLTAGE (V) V, +1.8V 4.97V, 3.V V, +4.3V V, 5.4V +4.96V, +1.8V +4.96V,.3V Figure 11. Input Common-Mode Voltage vs. Output Voltage, Dual Supplies, V S = ±5 V, G = COMMON-MODE VOLTAGE (V) V, +1.7V 4.96V, 3.1V V, +4.V V, 5.3V +4.96V, +1.7V +4.96V, 3.1V Figure 14. Input Common-Mode Voltage vs. Output Voltage, Dual Supplies, V S = ±5 V, G = Rev. B Page 1 of 8

11 15 V, +14.3V V S = ±15V 15 V, +14.V V S = ±15V COMMON-MODE VOLTAGE (V) V, +6.8V 11.95V, +5.3V 11.95V, 6.4V 14.96V, 7.9V V, +6.8V V, +11.3V V, +5.3V V S = ±1V V, 6.4V V, 1.4V V, 7.9V COMMON-MODE VOLTAGE (V) V, +6.7V 11.95V, +5.V 11.95V, 6.5V 14.95V, 8.V V, +6.7V V, +11.V V, +5.V V S = ±1V V, 6.5V V, 1.3V V, 8.V 15 V, 15.4V Figure 15. Input Common-Mode Voltage vs. Output Voltage, Dual Supplies, V S = ±15 V, G = V, 15.4V Figure 18. Input Common-Mode Voltage vs. Output Voltage, Dual Supplies, V S = ±15 V, G = V S =.7V. G = 1 V IN = V V OUT I IN INPUT VOLTAGE (V) Figure 16. Input Overvoltage Performance, G = 1, V S =.7 V INPUT CURRENT (ma) V S =.7V G = 1 V IN = V V OUT I IN INPUT VOLTAGE (V) Figure 19. Input Overvoltage Performance, G = 1, V S =.7 V INPUT CURRENT (ma) V S = ±15V.4 1 G = 1 V 1 IN = V.3 V 8 OUT I IN INPUT VOLTAGE (V) Figure 17. Input Overvoltage Performance, G = 1, V S = ±15 V INPUT CURRENT (ma) V S = ±15V.5 1 G = 1 V.4 1 IN = V 8 V OUT I IN INPUT VOLTAGE (V) Figure. Input Overvoltage Performance, G = 1, V S = ±15 V INPUT CURRENT (ma) Rev. B Page 11 of 8

12 INPUT BIAS CURRENT (na) V +4.V NEGATIVE PSRR (db) GAIN = 1 GAIN = 1 GAIN = 1 GAIN = COMMON-MODE VOLTAGE (V) Figure 1. Input Bias Current vs. Common-Mode Voltage, V S = +5 V k 1k 1k 1M FREQUENCY (Hz) Figure 4. Negative PSRR vs. Frequency V 7 6 GAIN = 1 V S = ±15V 4 5 INPUT BIAS CURRENT (na) V GAIN (db) GAIN = 1 GAIN = 1 GAIN = COMMON-MODE VOLTAGE (V) Figure. Input Bias Current vs. Common-Mode Voltage, V S = ±15 V k 1k 1k 1M 1M FREQUENCY (Hz) Figure 5. Gain vs. Frequency, V S = ±15 V GAIN = GAIN = 1 V S =.7V POSITIVE PSRR (db) GAIN = 1 GAIN = 1 GAIN = 1 GAIN (db) GAIN = 1 GAIN = 1 GAIN = k 1k 1k 1M FREQUENCY (Hz) Figure 3. Positive PSRR vs. Frequency, RTI k 1k 1k 1M 1M FREQUENCY (Hz) Figure 6. Gain vs. Frequency,.7 V Single Supply Rev. B Page 1 of 8

13 CMRR (db) GAIN = 1 GAIN = 1 GAIN = 1 GAIN = 1 BANDWIDTH LIMITED INPUT BIAS CURRENT (na) IN BIAS CURRENT +IN BIAS CURRENT OFFSET CURRENT V S = ±15V V = V INPUT OFFSET CURRENT (pa) k 1k 1k FREQUENCY (Hz) Figure 7. CMRR vs. Frequency, RTI TEMPERATURE ( C) Figure 3. Input Bias Current and Input Offset Current vs. Temperature CMRR (db) GAIN = 1 GAIN = 1 GAIN = 1 GAIN = 1 BANDWIDTH LIMITED GAIN ERROR (µv/v) ppm/ C.4ppm/ C.6 ppm/ C k 1k 1k FREQUENCY (Hz) Figure 8. CMRR vs. Frequency, RTI, 1 kω Source Imbalance NORMALIZED AT 5 C TEMPERATURE ( C) Figure 31. Gain Error vs. Temperature, G = CHANGE IN INPUT OFFSET VOLTAGE (µv) WARM-UP TIME (Seconds) Figure 9. Change in Input Offset Voltage vs. Warm-Up Time CMRR (µv/v) ppm/ C.ppm/ C REPRESENTATIVE DATA NORMALIZED AT 5 C TEMPERATURE ( C) Figure 3. CMRR vs. Temperature, G = Rev. B Page 13 of 8

14 INPUT VOLTAGE (V) ERRED TO SUPPLY VOLTAGES C +5 C +85 C +15 C +15 C OUTPUT VOLTAGE SWING (V) C +5 C +85 C +15 C +15 C SUPPLY VOLTAGE (±V S ) Figure 33. Input Voltage Limit vs. Supply Voltage k 1k 1k LOAD RESISTANCE (Ω) Figure 36. Output Voltage Swing vs. Load Resistance OUTPUT VOLTAGE SWING (V) ERRED TO SUPPLY VOLTAGES C +5 C +85 C +15 C +15 C OUTPUT VOLTAGE SWING (V) ERRED TO SUPPLY VOLTAGES C +5 C +85 C +15 C +15 C SUPPLY VOLTAGE (±V S ) Figure 34. Output Voltage Swing vs. Supply Voltage, R L = 1 kω µ 1µ 1m 1m OUTPUT CURRENT (A) Figure 37. Output Voltage Swing vs. Output Current, G = OUTPUT VOLTAGE SWING (V) ERRED TO SUPPLY VOLTAGES C +5 C +85 C +15 C +15 C SUPPLY VOLTAGE (±V S ) Figure 35. Output Voltage Swing vs. Supply Voltage, R L = kω NONLINEARITY (ppm/div) 8 G = Figure 38. Gain Nonlinearity, G = 1, R L kω Rev. B Page 14 of 8

15 8 6 G = 1 1k NONLINEARITY (ppm/div) 4 4 NOISE (nv/ Hz) 1 GAIN = 1 GAIN = 1 GAIN = Figure 39. Gain Nonlinearity, G = 1, R L kω 736- GAIN = 1 BANDWIDTH LIMITED k 1k 1k FREQUENCY (Hz) Figure 4. Voltage Noise Spectral Density vs. Frequency G = 1 GAIN = 1, nv/div NONLINEARITY (ppm/div) 4 4 GAIN = 1, 1µV/DIV Figure 4. Gain Nonlinearity, G = 1, R L kω s/DIV Figure Hz to 1 Hz RTI Voltage Noise, G = 1, G = G = 1 1k NONLINEARITY (1ppm/DIV) 4 4 NOISE (fa/ Hz) Figure 41. Gain Nonlinearity, G = 1, R L kω k 1k FREQUENCY (Hz) Figure 44. Current Noise Spectral Density vs. Frequency Rev. B Page 15 of 8

16 5V/DIV 15.46μs TO.1% 17.68µs TO.1%.%/DIV 1.5pA/DIV Figure Hz to 1 Hz Current Noise 1s/DIV µs/DIV Figure 48. Large-Signal Pulse Response and Settling Time, G = 1, 1 V Step, V S = ±15 V V S = ±15V OUTPUT VOLTAGE (V p-p) V S = +5V 3 1 1k 1k 1k 1M FREQUENCY (Hz) Figure 46. Large-Signal Frequency Response V/DIV.%/DIV 39.64μs TO.1% 58.4µs TO.1% 1µs/DIV Figure 49. Large-Signal Pulse Response and Settling Time, G = 1, 1 V Step, V S = ±15 V V/DIV 5.38μs TO.1% 6.µs TO.1% 5V/DIV 349.6μs TO.1% 59.6µs TO.1%.%/DIV.%/DIV 4µs/DIV Figure 47. Large-Signal Pulse Response and Settling Time, G = 1, 1 V Step, V S = ±15 V µs/DIV Figure 5. Large-Signal Pulse Response and Settling Time, G = 1, 1 V Step, V S = ±15 V Rev. B Page 16 of 8

17 mv/div 4µs/DIV mv/div µs/div Figure 51. Small-Signal Response, G = 1, R L = 1 kω, C L = 1 pf Figure 53. Small-Signal Response, G = 1, R L = 1 kω, C L = 1 pf mv/div 4µs/DIV mv/div 1µs/DIV Figure 5. Small-Signal Response, G = 1, R L = 1 kω, C L = 1 pf Figure 54. Small-Signal Response, G = 1, R L = 1 kω, C L = 1 pf Rev. B Page 17 of 8

18 34 33 NO LOAD R L = 47pF R L = 1pF R L = 147pF SUPPLY CURRENT (µa) mv/div 4µs/DIV Figure 55. Small-Signal Response with Various Capacitive Loads, G = 1, R L = SUPPLY VOLTAGE (±V S ) Figure 57. Supply Current vs. Supply Voltage SETTLING TIME (µs) SETTLED TO.1% SETTLED TO.1% STEP SIZE (V) Figure 56. Settling Time vs. Step Size, V S = ±15 V Dual Supplies Rev. B Page 18 of 8

19 THEORY OF OPERATION NODE 3 R G NODE 4 R1 4.7kΩ R 4.7kΩ R4 5kΩ R3 5kΩ NODE A3 V OUT +IN ESD AND OVERVOLTAGE PROTECTION Q1 A1 NODE 1 A Q ESD AND OVERVOLTAGE PROTECTION R5 5kΩ IN R6 5kΩ R B V BIAS R B GAIN STAGE Figure 58. Simplified Schematic DIFFERENCE AMPLIFIER STAGE ARCHITECTURE The is based on the classic 3-op-amp topology. This topology has two stages: a preamplifier to provide differential amplification, followed by a difference amplifier to remove the common-mode voltage. Figure 58 shows a simplified schematic of the. The first stage works as follows: in order to maintain a constant voltage across the bias resistor R B, A1 must keep Node 3 a constant diode drop above the positive input voltage. Similarly, A keeps Node 4 at a constant diode drop above the negative input voltage. Therefore, a replica of the differential input voltage is placed across the gain-setting resistor, R G. The current that flows across this resistance must also flow through the R1 and R resistors, creating a gained differential signal between the A and A1 outputs. Note that, in addition to a gained differential signal, the original common-mode signal, shifted a diode drop up, is also still present. The second stage is a difference amplifier, composed of A3 and four 5 kω resistors. The purpose of this stage is to remove the common-mode signal from the amplified differential signal. The transfer function of the is V OUT = G(V IN+ V IN ) + V where: G = kω R G GAIN SELECTION Placing a resistor across the R G terminals sets the gain of the, which can be calculated by referring to Table 7 or by using the following gain equation: R G 49.4 kω = G 1 Table 7. Gains Achieved Using 1% Resistors 1% Standard Table Value of R G (Ω) Calculated Gain 49.9 k k k k k The defaults to G = 1 when no gain resistor is used. The tolerance and gain drift of the R G resistor should be added to the specifications to determine the total gain accuracy of the system. When the gain resistor is not used, gain error and gain drift are minimal. If a gain of 5 is required and minimal gain drift is important, consider using the AD87. The AD87 has a default gain of 5 that is set with internal resistors. Because all resistors are internal, the gain drift is extremely low (<5 ppm/ C maximum). Rev. B Page 19 of 8

20 ERENCE TERMINAL The output voltage of the is developed with respect to the potential on the reference terminal. This is useful when the output signal needs to be offset to a precise midsupply level. For example, a voltage source can be tied to the pin to levelshift the output so that the can drive a single-supply ADC. The pin is protected with ESD diodes and should not exceed either or V S by more than.3 V. For the best performance, source impedance to the terminal should be kept below Ω. As shown in Figure 58, the reference terminal,, is at one end of a 5 kω resistor. Additional impedance at the terminal adds to this 5 kω resistor and results in amplification of the signal connected to the positive input. The amplification from the additional R can be computed by (5 kω + R )/(1 kω + R ). Only the positive signal path is amplified; the negative path is unaffected. This uneven amplification degrades CMRR. V INCORRECT V CORRECT + OP1177 Figure 59. Driving the Reference Pin INPUT VOLTAGE RANGE Figure 9 through Figure 15 and Figure 18 show the allowable common-mode input voltage ranges for various output voltages and supply voltages. The 3-op-amp architecture of the applies gain in the first stage before removing common-mode voltage with the difference amplifier stage. Internal nodes between the first and second stages (Node 1 and Node in Figure 58) experience a combination of a gained signal, a common-mode signal, and a diode drop. This combined signal can be limited by the voltage supplies even when the individual input and output signals are not limited. For most applications, Figure 9 through Figure 15 and Figure 18 provide sufficient information to achieve a good design. For applications where a more detailed understanding is needed, Equation 1 to Equation 3 can be used to understand how the gain (G), common-mode input voltage (V CM ), differential input voltage (V DIFF ), and reference voltage (V ) interact. The values for the constants, V LIMIT, V +LIMIT, and V _LIMIT, are shown in Table 8. These three formulas, along with the input and output range specifications in Table and Table 3, set the operating boundaries of the part V CM ( V ( V DIFF )( G) > V )( G) S + V LIMIT DIFF V CM + < + VS V+ LIMIT ( V )( G) + V DIFF CM + V < + V V S _ LIMIT Table 8. Input Voltage Range Constants for Various Temperatures Temperature V LIMIT V +LIMIT V _LIMIT 4 C.55 V.8 V 1.3 V +5 C.35 V.7 V 1.15 V +85 C.15 V.65 V 1.5 V +15 C.5 V.6 V.9 V Performance Across Temperature The common-mode input range shifts upward with temperature. At cold temperatures, the part requires extra headroom from the positive supply, and operation near the negative supply has more margin. Conversely, hot temperatures require less headroom from the positive supply, but are the worst-case conditions for input voltages near the negative supply. Recommendation for Best Performance A typical part functions up to the boundaries described in this section. However, for best performance, designing with a few hundred millivolts extra margin is recommended. As signals approach the boundary, internal transistors begin to saturate, which can affect frequency and linearity performance. If the application requirements exceed the boundaries, one solution is to apply less gain with the, and then apply additional gain later in the signal chain. Another option is to use the pin-compatible AD87. LAYOUT To ensure optimum performance of the at the PCB level, care must be taken in the design of the board layout. The pins are arranged in a logical manner to aid in this task. IN 1 R G R G 3 +IN 4 TOP VIEW (Not to Scale) V OUT Figure 6. Pinout Diagram (1) () (3) Rev. B Page of 8

21 Common-Mode Rejection Ratio Over Frequency Poor layout can cause some of the common-mode signals to be converted to differential signals before reaching the in-amp. Such conversions occur when one input path has a frequency response that is different from the other. To keep CMRR across frequency high, the input source impedance and capacitance of each path should be closely matched. Additional source resistance in the input path (for example, for input protection) should be placed close to the in-amp inputs, which minimizes their interaction with parasitic capacitance from the PCB traces. Parasitic capacitance at the gain-setting pins can also affect CMRR over frequency. If the board design has a component at the gain-setting pins (for example, a switch or jumper), the part should be chosen so that the parasitic capacitance is as small as possible. Power Supplies A stable dc voltage should be used to power the instrumentation amplifier. Note that noise on the supply pins can adversely affect performance. For more information, see the PSRR performance curves in Figure 3 and Figure 4. A.1 µf capacitor should be placed as close as possible to each supply pin. As shown in Figure 61, a 1 µf tantalum capacitor can be used farther away from the part. In most cases, it can be shared by other precision integrated circuits. INPUT BIAS CURRENT RETURN PATH The input bias current of the must have a return path to ground. When the source, such as a thermocouple, cannot provide a return current path, one should be created, as shown in Figure 6. INCORRECT TRANSFORMER THERMOCOUPLE 1MΩ CORRECT TRANSFORMER THERMOCOUPLE.1µF 1µF C C +IN IN.1µF 1µF V OUT LOAD Figure 61. Supply Decoupling,, and Output Referred to Local Ground References The output voltage of the is developed with respect to the potential on the reference terminal. Care should be taken to tie to the appropriate local ground C CAPACITIVELY COUPLED 1 f HIGH-PASS = πrc C R R CAPACITIVELY COUPLED Figure 6. Creating an I BIAS Path Rev. B Page 1 of 8

22 INPUT PROTECTION The has very robust inputs and typically does not need additional input protection. Input voltages can be up to 4 V from the opposite supply rail. For example, with a +5 V positive supply and a 8 V negative supply, the part can safely withstand voltages from 35 V to 3 V. Unlike some other instrumentation amplifiers, the part can handle large differential input voltages even when the part is in high gain. Figure 16, Figure 17, Figure 19, and Figure show the behavior of the part under overvoltage conditions. The rest of the terminals should be kept within the supplies. All terminals of the are protected against ESD. For applications where the encounters voltages beyond the allowed limits, external current-limiting resistors and lowleakage diode clamps such as the BAV199L, the FJH11s, or the SP7 should be used. RADIO FREQUENCY INTERFERENCE (RFI) RF rectification is often a problem when amplifiers are used in applications having strong RF signals. The disturbance can appear as a small dc offset voltage. High frequency signals can be filtered with a low-pass RC network placed at the input of the instrumentation amplifier, as shown in Figure 63. The filter limits the input signal bandwidth according to the following relationship: R 4.kΩ R 4.kΩ C C 1nF C D 1nF C C 1nF.1µF R G +IN IN.1µF 1µF Figure 63. RFI Suppression 1µF V OUT C D affects the difference signal and C C affects the common-mode signal. Values of R and C C should be chosen to minimize RFI. Mismatch between the R C C at the positive input and the R C C at the negative input degrades the CMRR of the. By using a value of C D that is one magnitude larger than C C, the effect of the mismatch is reduced and performance is improved FilterFrequency FilterFrequency where C D 1 C C. DIFF CM 1 = πr(c 1 = πrc C D + C C ) Rev. B Page of 8

23 APPLICATIONS INFORMATION DIFFERENTIAL DRIVE +IN IN R R V BIAS + OP AMP +OUT OUT RECOMMENDED OP AMPS: AD8515, AD8641, AD8. RECOMMENDED R VALUES: 5kΩ to kω. Figure 64. Differential Output Using an Op Amp Figure 64 shows how to configure the for differential output. The differential output is set by the following equation: V DIFF_OUT = V OUT+ V OUT = Gain (V IN+ V IN ) The common-mode output is set by the following equation: Tips for Best Differential Output Performance For best ac performance, an op amp with at least a MHz gain bandwidth and a 1 V/µs slew rate is recommended. Good choices for op amps are the AD8641, AD8515, and AD8. Keep trace lengths from the resistors to the inverting terminal of the op amp as short as possible. Excessive capacitance at this node can cause the circuit to be unstable. If capacitance cannot be avoided, use lower value resistors. For best linearity and ac performance, a minimum positive supply voltage ( ) is required. Table 9 shows the minimum supply voltage required for optimum performance. In this mode, V CM_MAX indicates the maximum common-mode voltage expected at the input of the. Table 9. Minimum Positive Supply Voltage Temperature Equation Less than 1 C > (V CM_MAX + V BIAS )/ V 1 C to 5 C > (V CM_MAX + V BIAS )/ V More than 5 C > (V CM_MAX + V BIAS )/ V V CM_OUT = (V OUT+ V OUT )/= V BIAS The advantage of this circuit is that the dc differential accuracy depends on the, not on the op amp or the resistors. In addition, this circuit takes advantage of the precise control that the has of its output voltage relative to the reference voltage. Although the dc performance and resistor matching of the op amp affect the dc common-mode output accuracy, such errors are likely to be rejected by the next device in the signal chain and therefore typically have little effect on overall system accuracy. Rev. B Page 3 of 8

24 PRECISION STRAIN GAGE The low offset and high CMRR over frequency of the make it an excellent candidate for performing bridge measurements. The bridge can be connected directly to the inputs of the amplifier (see Figure 65). 35Ω 35Ω 35Ω 35Ω 1µF.1µF 5V +IN + Figure 65. Precision Strain Gage R G IN.5V DRIVING AN ADC Figure 66 shows several methods for driving an ADC. The ADuC76 microcontroller was chosen for this example because it contains ADCs with an unbuffered, charge-sampling architecture that is typical of most modern ADCs. This type of architecture typically requires an RC buffer stage between the ADC and amplifier to work correctly Option 1 shows the minimum configuration required to drive a charge-sampling ADC. The capacitor provides charge to the ADC sampling capacitor while the resistor shields the from the capacitance. To keep the stable, the RC time constant of the resistor and capacitor needs to stay above 5 µs. This circuit is mainly useful for lower frequency signals. Option shows a circuit for driving higher speed signals. It uses a precision op amp (AD8616) with relatively high bandwidth and output drive. This amplifier can drive a resistor and capacitor with a much higher time constant and is therefore suited for higher frequency applications. Option 3 is useful for applications where the needs to run off a large voltage supply but drive a single-supply ADC. In normal operation, the output stays within the ADC range, and the AD8616 simply buffers it. However, in a fault condition, the output of the may go outside the supply range of both the AD8616 and the ADC. This is not an issue in the circuit, however, because the 1 kω resistor between the two amplifiers limits the current into the AD8616 to a safe level. 3.3V OPTION 1: DRIVING LOW FREQUENCY SIGNALS 3.3V 1Ω 1nF AV DD ADC ADuC76 3.3V OPTION : DRIVING HIGH FREQUENCY SIGNALS 3.3V AD8616 1Ω 1nF ADC1 +15V OPTION 3: PROTECTING ADC FROM LARGE VOLTAGES 3.3V 15V 1kΩ AD8616 1Ω 1nF ADC AGND Figure 66. Driving an ADC Rev. B Page 4 of 8

25 OUTLINE DIMENSIONS PIN 1 IDENTIFIER.65 BSC COPLANARITY MAX 6 15 MAX.3.9 COMPLIANT TO JEDEC STANDARDS MO-187-AA Figure Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters B 5. (.1968) 4.8 (.189) 4. (.1574) 3.8 (.1497) (.441) 5.8 (.84).5 (.98).1 (.4) COPLANARITY.1 SEATING PLANE 1.7 (.5) BSC 1.75 (.688) 1.35 (.53).51 (.1).31 (.1).5 (.98).17 (.67).5 (.196).5 (.99) 1.7 (.5).4 (.157) COMPLIANT TO JEDEC STANDARDS MS-1-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR ERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 8 Figure Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model 1 Temperature Range Package Description Package Option Branding ARMZ 4 C to +15 C 8-Lead MSOP RM-8 Y18 ARMZ-RL 4 C to +15 C 8-Lead MSOP, 13" Tape and Reel RM-8 Y18 ARMZ-R7 4 C to +15 C 8-Lead MSOP, 7" Tape and Reel RM-8 Y18 ARZ 4 C to +15 C 8-Lead SOIC_N R-8 ARZ-RL 4 C to +15 C 8-Lead SOIC_N, 13" Tape and Reel R-8 ARZ-R7 4 C to +15 C 8-Lead SOIC_N, 7" Tape and Reel R-8 BRMZ 4 C to +15 C 8-Lead MSOP RM-8 Y19 BRMZ-RL 4 C to +15 C 8-Lead MSOP, 13" Tape and Reel RM-8 Y19 BRMZ-R7 4 C to +15 C 8-Lead MSOP, 7" Tape and Reel RM-8 Y19 BRZ 4 C to +15 C 8-Lead SOIC_N R-8 BRZ-RL 4 C to +15 C 8-Lead SOIC_N, 13" Tape and Reel R-8 BRZ-R7 4 C to +15 C 8-Lead SOIC_N, 7" Tape and Reel R-8 1 Z = RoHS Compliant Part A Rev. B Page 5 of 8

26 NOTES Rev. B Page 6 of 8

27 NOTES Rev. B Page 7 of 8

28 NOTES 9 11 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D736--3/11(B) Rev. B Page 8 of 8

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