p-channel MOSFETs for Space Application

Transcription

1 p-channel MOSFETs for Space Application Fuji Electric Co., Ltd. 1

2 R&D Road Map nd Generation n-ch MOS Technology (100V,130V, 200V,250V, 500V) R&D Mass Production 3rd Generation n-ch MOS Technology 1st Generation p-ch MOS Technology (-100V,-200V) 2

3 Design Concept p-ch Power MOSFET Quasi-Plane Junction Using the same technology with the n channel : Quasi-Plane Junction technology will also be used for the p channel MOS. Our aim is to reach the highest level of the low RonA. + p+ - Source p+ p+ n+ n- p+ p+ n+ n- p- drift Gate p+ p+ n+ n- p+ n+ n- p++ sub Drain 3

4 Design Concept Width and dopant concentration of JFET region determine the main electrical characteristics : BVDSS, Ron. These values of JFET's region are important design parameters, therefore optimized. Cross-section of p-ch MOS by SCM (SCM: Scaning Capacitance Microscopy) Source Gate Source Gate Gate OX p+ (Source) p+ Gate OX + p+ - p+ p+ n+ n- p+ p+ n+ n- p+ p+ n+ n- JFET Region n- (Body) p- drift p- drift p++ sub Drain Drain 4

5 Optimization BVDSS and Ron are tradeoff for the dopant concentration of JFET region. P-ch MOS was designed, taking into account the dependence of the dopant concentration and other parameters BVDSS 1.0 Remarkable decrease of BVDSS 0.8 BVDSS [V] Design Range Ron [Ω] Remarkable decrease 50of Ron Ron jfet 領域の不純物濃度 [cm -2 ] Dopant concentration in JFET region [cm -3 ] 0.0 5

6 Low RonA p-ch Power MOSFET Compared with the competitor s p channel MOS, we have achieved the RonA approximately 25% lower RonA(mΩcm2) competitor FUJI 200V class 100V class BVdss(V) 6

7 SEE-SOA -100V class p-ch Power MOSFET (2SJ1A01, 2SJ1A02, 2SJ1A03, 2SJ1A04, 2SJ1A05, 2SJ1A06) The SEE-SOA shows good performance up to LET=37MeV/(mg/cm 2 ) *). *) Note: average LET in device VDS (V) LET: 37MeV/(mg/cm 2 ) Ion: Kr, Energy: 520 MeV Range: 63.1μm, T A =25+/-5 o C Fluence: 3E5+/- 5% ions/cm VGS (V) 7

8 SEE-SOA -200V class p-ch Power MOSFET (2SJ1A07, 2SJ1A08, 2SJ1A09, 2SJ1A10, 2SJ1A11, 2SJ1A12) The SEE-SOA shows good performance up to LET=37MeV/(mg/cm 2 ) *). *) Note: average LET in device VDS (V) LET: 37MeV/(mg/cm 2 ) Ion: Kr, Energy: 520 MeV Range: 63.1μm, T A =25+/-5 o C Fluence: 3E5+/- 5% ions/cm VGS (V) 8

9 TID p-ch Power MOSFET The TID shows good performance over 1000Gy (100kRad) upper limit -4.5V BVDSS (V) ID=-1mA -200 lower limit -200V BIAS VGS=-20V, VDS=0V VGS=0V, VDS=-160V Total Dose (Gy) Vth (V) ID=-1mA lower limit -2.5V BIAS -1 VGS=-20V, VDS=0V VGS=0V, VDS=-160V Total Dose (Gy) Source: Co 60 gamma-ray Dose: 1000 Gy(360Gy/hr) Bias Conditions (During and after irradiation) (a) V DS =0V, V GS =-20 V (b) V DS =-160V, V GS =0V Test Sample: 2SJ1A11 (-200V) 9

10 QT The QT was performed in accordance with the JAXA-QTS-2030D. Testing requirement and sample size were based on the MIL-PRF N. Period : January 2011 March 2011 QT Result : Accept Certification Acquisition : June 2011 Specification Document : JAXA-QTS-2030/

11 Intermittent Operation Life Test Intermittent operation life (IOL) test was evaluated to 10,000 cycles. JAXA-QTS-2030D Requirements (QT) Additional Test Start 2,000cyc 6,000cyc 8,000cyc 10,000cyc Gr.B-5 Gr.C1-1 (MIL:C6) Acc/Rej: Electrical Characteristics Acc/Rej: Electrical Characteristics Acc/Rej:Bond Strength 11

12 Intermittent Operation Life Test Result IOL 6,000cyc Electrical Test : Accept IOL 6,000cyc Bond Strength Test (Wire Pull) : Accept IOL 10,000cyc Electrical Test : Accept Number of defects in IOL Test IOL Cycles 2000cyc 6000cyc 8000cyc 10,000cyc SMD2 2SJ1A10 SMD1 2SJ1A11 SMD0.5 2SJ1A12 TO-254 2SJ1A07 Electrical 0/22 0/22 0/10 0/10 Wire Pull 0/12 Electrical 0/22 0/22 0/10 0/10 Wire Pull 0/12 Electrical 0/22 0/22 0/10 0/10 Wire Pull 0/12 Electrical 0/22 0/22 0/11 0/11 Wire Pull 0/11 12

13 p-ch Power MOSFET Line-up p-ch Power MOSFET -100V class PKG TO254 SMD2 SMD1 SMD0.5 ID 42A 25A-29A 11A-13A SEE TID 2SJ1A01 2SJ1A Ω 0.038Ω 2SJ1A02 2SJ1A Ω 0.090Ω 2SJ1A03 2SJ1A Ω 0.219Ω LET=37MeV/(mg/cm2) Kr, Energy:520MeV, LET:37MeV/(mg/cm2), Range:63μm, VDS=rated VDS, VGS=+5V 1000Gy 13

14 p-ch Power MOSFET Line-up p-ch Power MOSFET -200V class PKG TO254 SMD2 SMD1 SMD0.5 ID 35A-37A 16A-18A 7.5A-8.5A SEE TID 2SJ1A07 2SJ1A Ω 0.084Ω 2SJ1A08 2SJ1A Ω 0.203Ω 2SJ1A09 2SJ1A Ω 0.480Ω LET=37MeV/(mg/cm2) Kr, Energy:520MeV, LET:37MeV/(mg/cm2), Range:63μm, VDS=rated VDS, VGS=+5V 1000Gy 14

15 Specification p-ch Power MOSFET Type JAXA R _ V DSS V I D A I D (pulse) A R DS (on) Max. *1 Ω P D *2 W V GS V V GS (th) V Qg Max. nc Radiation Level krad PKG Weigh Typ. g 2SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ SMD SJ1A ±20-2.5~ SMD SJ1A ±20-2.5~ SMD SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ TO SJ1A ±20-2.5~ SMD SJ1A ±20-2.5~ SMD SJ1A ±20-2.5~ SMD *1 RDS (on): V GS =-12V, *2 P D : T C =25 o C 15

16 Fuji Power MOSFET PKG TO-254 SMD2 SMD1 SMD0.5 Die size V 42A/18mΩ 42A/33mΩ 15A/69mΩ 42A/13mΩ 42A/28mΩ 15A/64mΩ n 130V 42A/24mΩ 35A/46mΩ 15A/96mΩ 42A/17mΩ 39A/39mΩ 15A/89mΩ 200V 42A/33mΩ 33A/69mΩ 14A/155mΩ 42A/26mΩ 32A/62mΩ 14A/148mΩ 250V 42A/45mΩ 27A/98mΩ 12A/230mΩ 42A/38mΩ 26A/91mΩ 12A/223mΩ 500V 23A/0.18Ω 10A/0.48Ω 4.5A/1.15Ω 23A/0.18Ω 10A/0.48Ω 4.5A/1.15Ω p -100V -42A/45mΩ -25A/97mΩ -11A/226mΩ -42A/38mΩ -29A/90mΩ -13A/219mΩ -200V -35A/91mΩ -16A/210mΩ -7.5A/487mΩ -37A/84mΩ -18A/203mΩ -8.5A/480mΩ Specification Document ttps://eeepitnl.tksc.jaxa.jp/en JAXA-QTS-2030/101A JAXA-QTS-2030/103 JAXA-QTS-2030/102 JAXA-QTS-2030/104 16

17 Conclusion P-ch Power MOSFET s were developed as the result of the optimization of parameter in the JFET structure region. RonA, SEE-SOA, and TID show good characteristics. IOL achieved to 10,000 cycles. 17

18 Thank you very much! 18