Development of n-ch Power MOSFETs (100V to 500V Class) for Space Applications

Transcription

1 Development of n-ch Power MOSFETs (100V to 500V Class) for Space Applications Masanori INOUE, Humiaki KIRIHATA, Takashi KOBAYASHI, Naomi IKEDA *), and Satoshi KUBOYAMA *) Fuji Electric Device Technology Co., Ltd. *) JAXA

2 Outline Roadmap and Fuji s Rad-Hard Power MOSFETs Performance: Ron, TID, SEE-SOA Futures of QT and QCI Main Characteristics of SMD and Products Development Plan of New Products Conclusions 2

3 Roadmap of Fuji s Power MOSFETs 1990 s BJT 1 st Gen. MOS (500V, 250V) nd Gen. MOS Technology Development Production 1998 PKG Series (100,130, 200,250, 500V) QML Parts 08 for Domestic SMD-PKG Series (100,130, 200,250, 500V) 09 for Oversea 3

4 Photographs of Fuji s Power MOSFETs 4

5 Performance Ron: Fuji s 2 nd Generation MOSFET Technology On-sate Resistance Normalized RDS(on) V MOS 200V MOS 1 st Gen Rad-Hard 250V MOS 2nd Gen Rad-Hard Silicon Limit General Purpose MOS BVDSS [V] 250V MOS BVDSS dependence of RDS(on) Fuji s Rad-Hard Power MOSFET technology was presented at the 17 th MEWS, Ω/ 500V device 38mΩ/ 250V device 26mΩ/ 200V device 17mΩ/ 130V device 13mΩ/ 100V device. The Ron shows the top-class performance in the world. 5

6 TID Total Ionizing Dose 300 Source: Co 60 gamma-ray Dose: 1000 Gy(1000Gy/hr), 3000 Gy(3000Gy/hr), 6000 Gy(3000Gy/hr) Bias Conditions (During and after irradiation) (a) V DS =0V, V GS =20 V (b) V DS =0V, V GS =-20 V (c) V DS =200V, V GS =0V Test Sample: JAXA R 2SK4158 (250V) BIAS (a):vgs=+20v (b):vgs=-20v (c):vds=200v Vds=5V BIAS (a):vgs=+20v (b):vgs=-20v (c):vds=200v Total Dose(Gy) Total dose dependence of BV DSS Total Dose(Gy) Total dose dependence of V GS(th) The TID shows the good performance over 1000Gy (100kRad). 6

7 SEE-SOA (SEB/SEGR) Single Event Effect Safe Operating Area Single Event Burnout / Single Event Gate Rupture LET: 40.1MeV/(mg/cm 2 ) Ion: 89Y Energy: 928 MeV Range: 102μm TA=25+/-5 o C Fluence: 3E5+/- 5% ions/cm 2 Irradiation angle: Perpendicular to die surface Test Sample: JAXA R 2SK4158 (250V) VDS (V) V GS (V) The SEE-SOA shows the good performance up to LET=40.1MeV/(mg/cm 2 ). 7

8 Part No. JAXA R 2SK4049 2SK4050 2SK4214 2SK4215 2SK4216 2SK4051 2SK4052 2SK4053 2SK4054 2SK4055 2SK4056 2SK4185 2SK4186 2SK4187 Available Fuji s Rad Hard MOSFETs Spec 100V/18mΩ 100V/33mΩ 100V/69mΩ 130V/24mΩ 130V/46mΩ 130V/96mΩ 200V/33mΩ 200V/69mΩ 200V/155mΩ 250V/45mΩ 250V/98mΩ 250V/230mΩ 500V/0.18Ω 500V/0.48Ω 500V/1.15Ω Packag e Part No. JAXA R 2SK4217 2SK4218 2SK4219 2SK4152 2SK4153 2SK4154 2SK4155 2SK4156 2SK4157 2SK4158 2SK4159 2SK4160 2SK4188 2SK4189 2SK4190 Spec 100V/13mΩ 100V/28mΩ 100V/64mΩ 130V/17mΩ 130V/39mΩ 130V/89mΩ 200V/26mΩ 200V/62mΩ 200V/148mΩ 250V/38mΩ 250V/91mΩ 250V/223mΩ 500V/0.18Ω 500V/0.48Ω 500V/1.15Ω Package SMD-2 SMD-1 SMD-0.5 SMD-2 SMD-1 SMD-0.5 SMD-2 SMD-1 SMD-0.5 SMD-2 SMD-1 SMD-0.5 SMD-2 SMD-1 SMD-0.5 Features of QT and QCI in JAXA-QTS SK4048 Series SMD Series Applicable Documents The JAXA General Spec. JAXA-QTS-2030C The JAXA Detail Spec. JAXA-QTS-2030/101A JAXA-QTS-2030/102 JAXA-QTS-2030/103 The JAXA Appl. Data Sheet JAXA-ADS-2030/101A JAXA-ADS-2030/102 JAXA-ADA-2030/103 8

9 QT Qualification Test QT The QT in accordance with the JAXA-QTS-2030/101A *), 102, and 103 had been successfully performed by FDT and certified by JAXA. And the devices were listed in the QML on May Correspondence with the MIL-PRF-19500N The QT specified in the JAXA-QTS-2030/102 and 103 is comprised of the same test items specified in the MIL-PRF-19500N. *) Note The JAXA-QTS-2030/101A is re-certified, based on the QT test results of the same dice used in the JAXA-QTS-2030/102 and the same package used in the JAXA-QTS-2030/103. 9

10 QCI Quality Conformance Inspection Sample selection for QCI The dice of higher rated voltage and larger size in one wafer lot are selected for QCI to represent the wafer lot. Omission of QCI items When the devices built with the representative dice passed the QCI items, it is regarded that the devices with the lower rated voltage and smaller size dice in the wafer lot passed all or a part of the QCI items. The detailed criteria for the omission is shown in the JAXA Specifications: JAXA-QTS-2030/101A, 102, and 103. These features come from the wafer lot consisting of dice with various voltage ratings and sizes designed with the same rule. 10

11 Wafer Lot One wafer lot consists of 1 to 4 rated voltage types of Si wafer and three kinds of die size (1/1, 1/2, and 1/4 sizes). The same fabrication process, the same photo-mask, and the same die design are applied to the 100V, 130V, 200V, and 250V dice. 250V 200V 130V 100V Unit Block In the wafer process, the difference is only Si epi-crystal specifications for each rated voltage. Schematic representation of the wafer lot for the die family A large number of unit block consisting of 1/1, 1/2, and 1/4 size dice are arranged on one wafer. 11

12 Fuji s Rad-Hard Power MOSFET Series Packages SMD-2 SMD-1 SMD-0.5 Voltage Ratings Die Sizes 100V 130V 200V 250V 1/1 size 1/2 size 1/4 size 2SK4048 2SK4051 2SK4054 2SK4214 2SK4049 2SK4052 2SK4055 2SK4215 2SK4050 2SK4053 2SK4056 2SK4216 2SK4152 2SK4155 2SK4158 2SK4217 2SK4153 2SK4156 2SK4159 2SK4218 2SK4154 2SK4157 2SK4160 2SK4219 1/1 size 2SK4185 2SK V 1/2 size 2SK4186 2SK4189 1/4 size 2SK4187 2SK

13 Main Characteristics of SMD Products Type JAXA R _ V DSS V I D A R DS (on) Max. *1 Ω P D *2 W V GS V V GS (th) V Qg Max. nc Radiation Level krad PKG Spec. No JAXA-QTS-20 2SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SMD Package 2SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD SK ± SMD *1 RDS (on): V GS =12V, *2 P D : T C =25 o C 13

14 Main Characteristics of Products Package Type JAXA R _ V DSS V I D A R DS (on) Max. *1 Ω P D *2 W V GS V V GS (th) V Qg Max. nc Radiation Level krad PKG Spec. No JAXA-QTS-20 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± A 2SK ± SK ± SK ± *1 RDS (on): V GS =12V, *2 P D : T C =25 o C 14

15 Development Plan of New Products Development Control IC and 30V MOSFET for POL Production n-ch Power MOSFETs QT Lower Voltage Rating and Lower Ron p-ch Power MOSFETs QT 15

16 Conclusions We have developed the rad-hard and low Ron power MOSFETs in the rated voltage range of 100V to 500V. Some of products are now supplied for domestic and oversea customers. These space use MOSFETs are qualified in accordance with the JAXA-QTS-2030/101A, 102, and 103. The QT also fulfill the MIL-PRF-19500N. We are just developing a n-ch MOSFET of voltage rating lower than 100V and also will start to develop p- ch MOSFETs in this year. 16

17 Thank you very much! Matsumoto Castle Matsumoto, Nagano Pref. 17