Cosmic Rays induced Single Event Effects in Power Semiconductor Devices

Transcription

1 Cosmic Rays induced Single Event Effects in Power Semiconductor Devices Giovanni Busatto University of Cassino ITALY

2 Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

3 Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

4 Flux of Cosmic Rays in Space J. F. Ziegler, Terrestrial cosmic rays intensities, IBM Journal of R & D, Vol. 42, No. 1, pp , 1998

5 Particles Cascade into the Atmosphere after the Impact of an Energetic Particle J. F. Ziegler et Al., IBM experiments in soft fails in computer electronics, IBM Journal of R & D, Vol. 40, No. 1, pp. 3-18, 1996

6 Flux of Impacting Energetic Particles at the Sea Level J. F. Ziegler, Terrestrial cosmic rays intensities, IBM Journal of R & D, Vol. 42, No. 1, pp , 1998

7 Radiations Effects IONIZING RADIATION EFFECTS TOTAL DOSE EFFECTS SINGLE EVENT EFFECTS SINGLE SOFT ERRORS SINGLE HARD ERRORS SEU SEFI SEL SEB SEGR

8 SEE Tests In field experiments are too expensive Accelerators (LinAc or cyclotrons) are used to produce high energy particle beams Typical experiments are performed by using: neutrons and protons heavy ions (Ni, Br, I, Au)

9 Heavy Ions Irradiation Facilities 16MV TANDEM XTU I.N.F.N. L N L (PD) 15MV TANDEM XTU I.N.F.N. L N S (CT)

10 Particle Impact on a Power Device DIODE Anode MOSFET Source Gate IGBT Gate Emitter E P+ N - N+ P+ N - N+ N - P+ x N+ Kathode N+ Drain N+ P+ Collector

11 Anode The Brag Diagram P+ N - 58 Ni 28, 142 MeV N+ Kathode

12 The Choice of the Impacting Particle Titus et al. Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFET s, IEEE Trans. on Nuclear Science, Vol. 43 n. 2, pp , 1996

13 Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

14 SEB of DIODES

15 Typical Test Circuit (Static Characterization) 1MΩ Ionbe beam DUT Vbias C i(t) 50Ω line 50Ω v(t)

16 Generated Charge Histograms 1700V Diode Diode failed at V SEB =1060V

17 Current [A] Charge Amplification (Measured Waveforms) V Diode 100ns Time [ns] Gerald Soelkner, et al., Charge Carrier Avalanche Multiplication in High- Voltage Diodes Triggered by Ionizing Radiation IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 47, NO. 6, pp , Dec. 2000

18 4kV Diode Bias Voltage: 1800V Simulated Particle : 12 C (17MeV) Energy Transfer Peak: 1.2 MeV/μm Range: 17μm Charge Amplification (2D Simulation) E-field[kV/cm] T=0 25ps 100ps 150ps 230ps 500ps 1ns Depth [ μm] -3 E-Density [cm ] P + N - N +

19 4kV Diode Bias Voltage: 1800V Simulated Particle : 12 C (17MeV) Energy Transfer Peak: 1.2 MeV/μm Charge Amplification (2D Simulation) E-field[kV/cm] -3 E-Density [cm ] ps 25ps 150ps 230ps 500ps 1ns 3ns Depth [ μm] 25ps 100ps 150ps 230ps 500ps 1ns Depth [ μm]

20 Diode Current during a Destructive Impact Bias Voltage: 2200V ns Current [A] Time [ns]

21 Simulation of a SEB 400 4kV Diode Biasing Voltage: 2200V E-field[kV/cm] ps 25ps 75ps 100ps 125ps 150ps Simulated particles: 12 C (17MeV) Depth [ μm] Energy Transfer Peak: 1.2 MeV/μm Range: 17μm -3 E-Density [cm ] ps 50ps 75ps 100ps 125ps 300ps 150ps Depth [ μm]

22 Double Injection Phenomenon E-field[kV/cm] High: Current Density Carriers Concentration Electric Field E-Density [cm ] Depth [ μm] Impact Ionization

23 Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

24 SEE in Power MOSFET SEGR SEB

25 Test Circuit GPIB Oscilloscope Computer for Statistical Analysis

26 SEB in Power MOSFET Studied Structures MOSFET DIODE Source Gate Anode Gate Body Body N + N + P _ P _ P + P + N _ N _ N + N + Drain Kathode

27 MOSFET Behaviour at increasing Voltage Charge [pc] Single Event Burn-out Gate Oxide Damage Diode is safe up to 200V Gate leakage 15 current significantly 10 increases Vds,Vnp [V] MOSFET DIODE

28 Parasitic BJT Activation Source Emitter Gate Body Base N + P _ R P+ P + N _ N + Drain Collector

29 The effect of the epi-thickness on the BJT Activation

30 3D Simulation of Potentially Destructive Impact 200V MOSFET V DS = 100V V GS = 0V Simulated Particle: 79 Br (236MeV) Range: 34μm

31 3D Simulation of Potentially Destructive Impact Holes Concentration Electric Field -3 Log (Hole Conc.) [cm ] Elec tric Field [V/c m] 5.00x x x x x x x x Drain Current

32 3D Simulation of Potentially Destructive Impact Holes Concentration Electric Field -3 Log (Hole Conc.) [cm ] Elec tric Field [V/c m] 5.00x x x x x x x x Drain Current

33 3D Simulation of Potentially Destructive Impact Electric Field (35ps)

34 SEGR in Power MOSFET SEGR

35 Mean Charge Generated in a 200V MOSFET and in Corresponding Diode 40 V GS =0 Charge [pc] Gate oxide damage is evidenced by the increase of Gate leakege current, IGSS Vds,Vnp [V] MOSFET DIODE

36 3D Simulation of an Impact accompanied by Gate Damage 200V MOSFET V DS = 60V V GS = 0V Simulated Particle: 79 Br (236MeV) Range: 34μm

37 3D Simulation of an Impact accompanied by Gate Damage Electric Field 200V MOSFET V DS = 60V V GS = 0V

38 3D Simulation of an Impact accompanied by Gate Damage Holes Concentration 200V MOSFET V DS = 60V V GS = 0V

39 SEGR Conceptual Model J. R. Brews, et. Al. A Conceptual model for SEGR in Power MOSFET s, IEEE TRANS. ON NUCLEAR SCIENCE, VOL. 40, NO. 6, DECEMBER 1993

40 Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

41 SEB in IGBTs Emettitore Gate N + P _ P + N _ P + Collettore

42 Emettitore SEB in IGBTs Kathode Gate Gate N + P _ P + R P+ N _ P + Collettore Anode

43 SEB in IGBTs (2D Simulation) W. Kaindl, et. Al. Cosmic Radiation-Induced Failure Mechanism of High Voltage IGBT, Proc. of the 17th ISPSD, May 23-26, 2005, Santa Barbara, CA

44 Conclusions Main phenomena observed during the impact with energetic particles have been presented In SEB phenomena the interaction between Charge and Electric Field (double injection) plays a relevant role in triggering electrical instabilities In MOSFET its effects are enhanced by parasitic BJT activation In IGBT the presence of two parasitic BJT makes the device even more subject to SEB In SEGR phenomena charge motion during the impact causes the electric field across the oxide to increase and causes damages to it more theoretical work must be developed to better understand the formation of the damages to the gate oxide

45 Thank you for your attention!