Features. Description. Table 1. Device summary. Quality level. Package. Gold TO-254AA
|
|
- Shanon Lee
- 5 years ago
- Views:
Transcription
1 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features Datasheet - production data V BDSS I D R DS(on) Q g 100 V 48 A 30 mω 135 nc TO-254AA Fast switching 100% avalanche tested Hermetic package 50 krad TID SEE radiation hardened Applications Figure 1. Internal schematic diagram D(1) Satellite High reliability Description G(3) This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified. S(2) SC30150 Table 1. Device summary Part number ESCC part number Quality level Package Lead finish Mass (g) Temp. range EPPL Engineering STRH100N10HY1 - - model Gold TO-254AA to 150 C STRH100N10HYG 5205/021/01 Yes ESCC flight STRH100N10HYT 5205/021/02 Solder dip - Note: Contact ST sales office for information about the specific conditions for product in die form and for other packages. April 2016 DocID17486 Rev 10 1/20 This is information on a product in full production.
2 Contents STRH100N10 Contents 1 Electrical ratings Electrical characteristics Radiation characteristics Electrical characteristics (curves) Test circuits Package information Order codes Other information Revision history /20 DocID17486 Rev 10
3 Electrical ratings 1 Electrical ratings (T C = 25 C unless otherwise specified) Table 2. Absolute maximum ratings (pre-irradiation) Symbol Parameter Value Unit V (1) DS Drain-source voltage (V GS = 0) 100 V (2) V GS Gate-source voltage ±20 V I (3) D Drain current (continuous) 48 A I (3) D Drain current (continuous) at T C = 100 C 30 A (4) I DM Drain current (pulsed) 192 A (3) P TOT Total dissipation 170 W dv/dt (5) Peak diode recovery voltage slope 2.6 V/ns T stg Storage temperature C - 55 to 150 T J Operating junction temperature C 1. This rating is T J 25 C (see Figure 10: Normalized BV DSS vs temperature). 2. This value is guaranteed over the full range of temperature. 3. Rated according to the R thj-case + R thc-s. 4. Pulse width limited by safe operating area. 5. I SD 48 A, di/dt 100 A/µs, V DD = 80% V (BR)DSS. Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 0.52 C/W R thc-s Case-to-sink typ 0.21 C/W DocID17486 Rev 10 3/20 20
4 Electrical ratings STRH100N10 Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR (1) E AS E AS E AR E AR Avalanche current, repetitive or not-repetitive (pulse width limited by T J max) Single pulse avalanche energy (starting T J =25 C, I D = I AR, V DD =50 V) Single pulse avalanche energy (starting T J =110 C, I D = I AR, V DD =50 V) Repetitive avalanche (V dd = 50 V, I AR = 24 A, f = 10 KHz, T J = 25 C, duty cycle = 50%) Repetitive avalanche (V dd = 50 V, I AR = 24 A, f = 100 khz, T J = 25 C, duty cycle = 10%) Repetitive avalanche (V dd = 50 V, I AR = 24 A, f = 100 khz, T J = 110 C, duty cycle = 10%) 24 A 954 mj 280 mj 60 mj 24 mj Maximum rating value. 4/20 DocID17486 Rev 10
5 Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified). Pre-irradiation Table 5. Pre-irradiation on/off states Symbol Parameter Test conditions Min. Typ. Max. Unit I DSS I GSS (1) BV DSS V GS(th) R DS(on) Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance 80% BV Dss 10 80% BV Dss T C = 125 C V GS = 20 V V GS = -20 V -100 V GS = 20 V, T C = 125 C V GS = -20 V, T C = 125 C V GS = 0, I D = 1 ma 100 V V DS = V GS, I D = 1 ma, T C = -55 C V DS = V GS, I D = 1 ma V DS = V GS, I D = 1 ma, T C = 125 C V GS = 12 V; I D = 24 A V GS = 12 V; I D = 24 A; T C = 125 C µa na V Ω 1. This rating is T J 25 C (see Figure 10: Normalized BV DSS vs temperature). DocID17486 Rev 10 5/20 20
6 Electrical characteristics STRH100N10 Table 6. Pre-irradiation dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss (1) C oss C rss Input capacitance pf Output capacitance V GS = 0, V DS = 25 V, pf f = 1 MHz Reverse transfer capacitance pf (1) Equivalent output C oss eq. capacitance (2) V GS = 0, V DD = 80 V 480 pf Q g Total gate charge nc Q gs Gate-to-source charge V DD = 50 V, I D = 48 A, nc Q gd V GS = 12 V Gate-to-drain ( Miller ) charge nc (3) R G Gate input resistance Ω f = 1 MHz gate DC bias=0 L G Gate inductance 4.5 nh test signal level=20mv L S Source inductance open drain 7.5 nh L D Drain inductance 7.5 nh 1. This value is guaranteed over the full range of temperature. 2. This value is defined as the ratio between the Q oss and the voltage value applied. 3. Not tested, guaranteed by process. Table 7. Switching times (pre-irradiation) Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) Turn-on delay time ns t r Rise time V DD = 50 V, I D = 24 A, ns t d(off) Turn-off-delay time R G = 4.7 Ω, V GS = 12 V ns t f Fall time ns 6/20 DocID17486 Rev 10
7 Electrical characteristics 1. Refer to the Figure 16. Table 8. Source drain diode (pre-irradiation) (1) Symbol Parameter Test conditions Min. Typ. Max Unit I SD Source-drain current 48 A I SDM (2) V SD (3) Source-drain current (pulsed) Forward on voltage 2. Pulse width limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. 4. Not tested in production, guaranteed by process. I SD = 48 A, V GS = I SD = 48 A, V GS = 0, T C = 125 C 192 A (4) t rr Reverse recovery time I SD = 48 A, ns Q (4) rr Reverse recovery charge di/dt = 100 A/µs 5 µc I (4) RRM Reverse recovery current V DD = 50 V, T J = 25 C 24 A t rr(4) Reverse recovery time I SD = 48 A, ns Q (4) rr Reverse recovery charge di/dt = 100 A/µs 7 µc I (4 RRM Reverse recovery current V DD = 50 V, T J = 150 C 28 A V DocID17486 Rev 10 7/20 20
8 Radiation characteristics STRH100N10 3 Radiation characteristics The technology of the STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to radiative environments. Every manufacturing lot is tested, using the TO-3 package, in total ionizing dose (irradiation done according to the ESCC specification, window 1) and single event effect according to the MIL-STD-750E TM1080 up to a fluence level of 3e+5 ions/cm². Both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (T amb = 22 ± 3 C unless otherwise specified). Total dose radiation (TID) testing One bias conditions using the TO-3 package: V GS bias: + 15 V applied and V DS = 0 V during irradiation The following parameters are measured (see Table 9, Table 10 and Table 11): before irradiation after irradiation after 24 room temperature after C anneal Table 9. Post-irradiation on/off T J = 25 C, (Co60 γ rays 50 K Rad(Si)) Symbol Parameter Test conditions Drift values Δ Unit I DSS I GSS Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) 80% BV Dss +4 µa V GS = 20 V V GS = -20 V BV DSS Drain-to-source breakdown voltage V GS = 0, I D = 1 ma -25% V V GS(th) Gate threshold voltage V DS = V GS, I D = 1 ma -50% / + 5% V R DS(on) Static drain-source on resistance V GS = 12 V; I D = 24 A ±10% Ω na Table 10. Dynamic T J = 25 C, (Co60 γ rays 50 K Rad(Si)) (1) Symbol Parameter Test conditions Drift values Δ Unit Q g Total gate charge -5% / +50% Q gs Gate-source charge I G = 1 ma, V GS = 12 V, V DS = 50 V, I DS = 48 A ±35% Q gd Gate-drain charge -5% / +130% nc 1. Post irradiation data guaranteed at 25 C per ESCC specification. 8/20 DocID17486 Rev 10
9 Radiation characteristics Table 11. Source drain diode T J = 25 C, (Co60 γ rays 50 K Rad(Si)) (1) Symbol Parameter Test conditions Drift values Δ. Unit V SD (2) Forward on voltage I SD = 48 A, V GS = 0 ±10% V 1. Refer to Figure Pulsed: pulse duration = 300 µs, duty cycle 1.5% Single event effect, SOA The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant to heavy ion environment for single event effect according to MIL-STD-750E method 1080 (bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have been performed with a fluence of 3e+5 ions/cm². The accept/reject criteria are: SEB test: drain voltage checked, trigger level is set to V ds = - 5 V. Stop condition: as soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm². SEGR test: the gate current is monitored every 100 ms. A gate stress is performed before and after irradiation. Stop condition: as soon as the gate current reaches 100 na (during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm². The results are: SEB immune at 60 MeV/mg/cm2 SEGR immune at 60 MeV/mg/cm2 within the safe operating area (SOA) given in Table 12: Single event effect (SEE), safe operating area (SOA) and Figure 2: Single event effect, SOA) Table 12. Single event effect (SEE), safe operating area (SOA) Ion Let (Mev/(mg/cm 2 ) Energy (MeV) Range (µm) V DS GS GS = -2 GS = -5 GS = -10 GS = -20 V Kr Xe DocID17486 Rev 10 9/20 20
10 Radiation characteristics STRH100N10 Figure 2. Single event effect, SOA 100 Kr (32 MeV.cm²/mg, 768MeV) Xe (60 MeV.cm²/mg, 1217MeV) Vgs (V) Vds (% Vdsmax) Figure 3. Single event effect, bias circuit (a) a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA). 10/20 DocID17486 Rev 10
11 Electrical characteristics (curves) 4 Electrical characteristics (curves) Figure 4. Safe operating area Figure 5. Thermal impedance 1000 AM04952v2 K δ=0.5 HG0K Id [A] Operation in in this this area area is is Limited by by max max RDS(on) DS(on) 100µs 1ms Tj=150 C Tc=25 C Single pulse 10ms DC Vds [V] Figure 6. Output characteristics Single pulse Zth=k(Rthj-c+Rthc-s) δ=tp/τ tp(s) Figure 7. Transfer characteristics tp τ ID (A) VGS=12V AM01494v V 100 6V 50 5V VDS(V) Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations C (pf) Crss AM01496v1 Ciss Coss 10 VDS=25V, VGS=0 f=1mhz, TJ=25 C VDS(V) DocID17486 Rev 10 11/20 20
12 Electrical characteristics (curves) STRH100N10 Figure 10. Normalized BV DSS vs temperature Figure 11. Static drain-source on resistance Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature Figure 14. Source drain-diode forward characteristics 12/20 DocID17486 Rev 10
13 Test circuits 5 Test circuits Figure 15. Switching times test circuit for resistive load (1) 1. Max driver V GS slope = 1V/ns (no DUT) Figure 16. Source drain diode DocID17486 Rev 10 13/20 20
14 Test circuits STRH100N10 Figure 17. Unclamped inductive load test circuit (single pulse and repetitive) 14/20 DocID17486 Rev 10
15 Package information 6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 18. TO-254AA package outline DocID17486 Rev 10 15/20 20
16 Package information STRH100N10 Table 13. TO-254AA mechanical data Dim. mm Inch Min. Typ. Max. Min. Typ. Max. A B C D E F G H I J K L M N 0.71 R R /20 DocID17486 Rev 10
17 Order codes 7 Order codes Table 14. Ordering information Order code ESCC part number Quality level EPPL Package Lead finish Marking Packing STRH100N10HY1 - Engineering model STRH100N10HYG 5205/021/01 Yes ESCC flight STRH100N10HYT 5205/021/ TO-254AA Gold Solder dip STRH100N10HY1+ BeO F + BeO F + BeO Strip pack For specific marking only the complete structure is: ST Logo ESA Logo Date code (date of sealing of the package) : YYWWA YY: year WW: week number A: week index ESCC part number (as mentioned in the table) Warning signs (e.g. BeO) Country of origin: FR (France) Part serial number within in the assembly lot Contact ST sales office for information about the specific conditions for products in die form and for other packages. 7.1 Other information Date code The date code for ESCC flight is structured as follows: yywwz where: yy: last two digits of year ww: week digits z: lot index in the week Documentation The table below provide a summary of the documentation provided with each type of products. DocID17486 Rev 10 17/20 20
18 Order codes STRH100N10 Table 15. Summary of the documentation provided Quality level Radiation level Documentation Engineering model - - ESCC flight 50Krad Certificate of conformance radiation verification test report 18/20 DocID17486 Rev 10
19 Revision history 8 Revision history Table 16. Document revision history Date Revision Changes 13-May First release. 14-Jun Updated Table 1: Device summary. 18-Oct Updated Table 1, 5, 9 and Dec Jul Nov May Apr Dec Apr Updated Figure 2: Single event effect, SOA. and TO-254AA mechanical data. Updated part numbers in Table 1: Device summary and Table 14: Ordering information. Minor text changes to improve readability. Updated dynamic values on Table 6: Pre-irradiation dynamic, Table 7: Switching times (pre-irradiation) and Table 8: Source drain diode (pre-irradiation). Updated Table 1, Table 12, Table 14, Figure 2 and Section 7: Order codes. Minor text changes in Section 3: Radiation characteristics Modified: Figure 2 Minor text changes Updated features in cover page. Updated Table 5, Table 8, Table 9, Table 10, Table 11 and Table 15. Updated Table 8: Source drain diode (pre-irradiation). Minor text changes. DocID17486 Rev 10 19/20 20
20 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 20/20 DocID17486 Rev 10
Features. Description. Table 1. Device summary. Gold TO-257AA
Rad-Hard 100 V, 12 A P-channel Power MOSFET Features Datasheet - production data V DSS I D R DS(on) Q g 100V 12 A 265 mω 40 nc TO-257AA 1 2 3 Fast switching 100% avalanche tested Hermetic package 100 krad
More informationSTRH8N10. Rad-Hard 100 V, 6 A N-channel Power MOSFET. Features. Applications. Description
Rad-Hard 100 V, 6 A N-channel Power MOSFET Features Datasheet - production data V DSS I D R DS(on) Q g 100 V 6 A 0.30 Ω 22 nc SMD.5 Fast switching 100% avalanche tested Hermetic package 50 krad TID SEE
More informationQuality level. Package. Engineering model TO-254AA Gold to 150 C. STRH100N10HY /021/01 ESCC flight Yes
Rad-Hard 100 V, 48 A N-channel Power MOSFET Features V BDSS I D R DS(on) Q g 100 V 48 A 30 mohm 135 nc Fast switching 100% avalanche tested Hermetic package 70 krad TID SEE radiation hardened Applications
More informationFeatures. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube
N- Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STWA70N60DM2 600 V 66 A 446 W 3 2 1 TO-247 long leads Figure 1: Internal schematic
More informationFeatures. Features. Description. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T Jmax R DS(on)max I D 5 STL33N60M2 650 V 0.135 Ω 22 A 4
More information1 Electrical ratings Electrical characteristics Electrical characteristics (curves)... 6
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP35N60DM2 600 V 0.110 Ω 28 A 210 W Figure
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel
Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
More informationN-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
More informationOrder code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationOrder code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode
More informationSTD12N65M2. N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package. Features. Applications. Description DPAK (TO-252)
N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on)max. I D 650 V 0.5 Ω 8 A DPAK (TO-252) Extremely low gate charge
More informationSTO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications.
Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationSTT7P2UH7. P-channel 20 V, Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package. Applications. Description.
P-channel 20 V, 0.0195 Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order codes Marking Package Packaging. STD13N65M2 13N65M2 DPAK Tape and reel
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
More informationFeatures. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF27N60M2-EP 27N60M2EP TO-220FP Tube
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh M2 EP Power MOSFET in TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max I D 600 V 0.163 Ω 20 A TO-220FP Figure 1: Internal schematic
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW40N65M2 40N65M2 TO-247 Tube
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D STW40N65M2 650 V 0.099 Ω 32 A TO-247 1 3 2 Extremely
More informationN-channel 30 V, Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3. Features.
N-channel 30 V, 0.0027 Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V DS R DS(on) max I D STL23NS3LLH7 30 V 0.0037
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube
N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
More informationSTP16N65M2, STU16N65M2
STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationOrder code V DS R DS(on) max. I D
N-channel 6 V,.23 Ω typ., 13 A MDmesh M2 EP Power MOSFET in an I²PAK package TAB Features Order code V DS R DS(on) max. I D STI2N6M2-EP 6 V.278 Ω 13 A I²PAK D(2, TAB) 1 2 3 Extremely low gate charge Excellent
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package Features TAB Order code V DS @ T Jmax R DS(on) max. I D STP15N60M2-EP 650 V 0.378 Ω 11 A TO-220 D(2, TAB) 1 2
More informationSTF12N120K5, STFW12N120K5
STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
More informationFeatures. Description S 7 6 D 5 D 4 S GIPG ALS
STL7N6M N-channel 6 V,.9 Ω typ., 5 A MDmesh M Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V DS @ Tjmax R DS(on) max 7 6 5 STL7N6M 65 V.5 Ω 5 A Extremely low
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package Features TO-247 1 3 2 Order code V DS @ T Jmax R DS(on) max. I D STW25N60M2-EP 650 V 0.188 Ω 18 A Extremely low
More informationP-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D
Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
More informationN-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
More informationOrder code V DS R DS(on) max I D
Datasheet N-channel 6 V,.23 Ω typ., 13 A, MDmesh M2 EP Power MOSFET in a TO-22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on) max I D STF2N6M2-EP 6 V.278 Ω 13 A Extremely low gate charge
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF7LN80K5 7LN80K5 TO-220FP Tube
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF7LN80K5 800 V 1.15 Ω 5 A 3 1 2 TO-220FP Figure 1:
More informationFeatures. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationSTF14N80K5, STFI14N80K5
STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code V DS R DS(on) max. I D STF14N80K5 STFI14N80K5
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel
N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
More informationSTB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet
STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D 2 PAK, I 2 PAK, TO-220 and TO-247 packages TAB TAB Features Order codes V DS @ T
More informationSTF10N105K5, STP10N105K5, STW10N105K5
STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data TAB Features Order codes V DS R DS(on)
More informationFeatures. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
More informationN-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D TAB 1 3 2 D
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Package Packaging. STF10N80K5 10N80K5 TO-220FP Tube
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT STF10N80K5 800 V 0.600 Ω 9 A 30 W TO-220FP Figure
More informationSTD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet production data TAB Order codes V
More informationFeatures. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data Order code V DS R DS(on) max I D TAB DPAK 1 3 STD12N50M2 500 V 0.38 Ω 10 A Extremely low
More informationSTD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet - production data Order code V DS
More informationAmong the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
N-channel 100 V, 5 mω typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS R DS(on) max. I D P TOT STL110N10F7 100 V 6 mω 107 A 136 W Among the lowest R DS(on) on the
More informationN-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel
N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest
More informationSTD12NF06LT4. N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package. Datasheet. Features. Applications.
Datasheet N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package Features TAB Order code V DS R DS(on) max. I D DPAK D(2, TAB) 2 1 3 STD12NF06LT4 60 V 90 mω 12 A Exceptional dv/dt
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube
N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
More informationOrder code V DS R DS(on ) max. I D
Datasheet N-channel 9 V,.21 Ω typ., 2 A MDmesh K5 Power MOSFET in a TO 22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on ) max. I D STF2N9K5 9 V.25 Ω 2 A Industry s lowest R DS(on) x area
More informationN-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
More informationSTD7N60M2, STP7N60M2, STU7N60M2
Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
More informationAutomotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.
Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DS R DS(on) max STD7N65M2 650 V 1.15 Ω 5 A I D DPAK 1 3 Extremely low gate
More information100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Datasheet N-channel 620 V, 1.7 Ω typ., 3.8 A MDmesh K3 Power MOSFET in DPAK package Features TAB Order codes V DS R DS(on) max. I D P TOT 2 3 1 DPAK D(2, TAB) STD4N62K3 620 V 2 Ω 3.8 A 70 W 100% avalanche
More informationSTD5N60M2, STP5N60M2, STU5N60M2
Datasheet N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS @ T Jmax R DS(on) max. I D STD5N60M2 STP5N60M2
More informationSTD16N50M2, STF16N50M2, STP16N50M2
Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages TAB 3 2 1 DPAK Features Order code V DS at T J max. R DS(on) max. I D Packages TAB STD16N50M2
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
More informationSTB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mω typ., 80 A STripFET F7 Power MOSFETs in D 2 PAK, DPAK, TO-220FP, I 2 PAK and TO-220 packages TAB TAB Features
More informationPrerelease product(s)
Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
More informationSTB22NM60N, STF22NM60N, STP22NM60N
Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube
N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V DS @ T Jmax R DS(on) max I D STW38N65M5-4 710 V 0.095 Ω 30 A Extremely
More informationOrder code V DS R DS(on) max. I D P TOT
Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2
More informationSTD7NM60N, STF7NM60N, STU7NM60N
Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD7NM60N STF7NM60N 600 V 0.9 Ω 5 A DPAK TO-220FP
More informationOrder code V DS R DS(on) max. I D
Datasheet Nchannel 6 V, 15 mω typ., 25 A, MDmesh M6 Power MOSFET in a TO22FP package Features TO22FP D(2) 1 2 3 Order code V DS R DS(on) max. I D STF33N6M6 6 V 125 mω 25 A Reduced switching losses Lower
More informationP-channel -30 V, 48 mω typ., -2 A STripFET H6 Power MOSFET in a SOT-23. Order code V DS R DS(on) max. I D
Datasheet Pchannel 30 V, 48 mω typ., 2 A STripFET H6 Power MOSFET in a SOT23 package 3 Features Order code V DS R DS(on) max. I D 1 SOT23 2 STR2P3LLH6 30 V 56 mω 2 A Very low onresistance Very low gate
More informationSTH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
STH12N120K5-2, STP12N120K5, N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V DS R DS(on) max.
More informationSTD4N52K3, STP4N52K3, STU4N52K3
Datasheet N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS R DS(on) max. I D Package STD4N52K3 2.5
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STL6N3LLH6 STG1 PowerFLAT 2x2 Tape and reel
Nchannel 30 V, 0.02 Ω typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 2 3 STL6N3LLH6 30 V 0.025Ω (V GS= 0 V) 0.04Ω
More informationAutomotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features
Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More informationAutomotive-grade N-channel 60 V, Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package. Features. Description.
Automotivegrade Nchannel 60 V, 0.012 Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package Datasheet production data Features TAB Order code V DS R DS(on) max. I D P TOT 60 V 0.014 Ω 60 A 110 W 1 3
More informationSTB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
More informationSTD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages TAB Features TAB 2 3 1 DPAK Order code V DS R DS(on) max. I D Package STD3NK90ZT4 DPAK STP3NK90Z
More informationN-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0016 Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D STL160NS3LLH7 30 V 0.0021
More informationN-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description.
STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationSTN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics
More informationN-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0027 Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D 30 V 0.0034 Ω 120 A Very
More informationSTP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationSTD2N62K3, STF2N62K3, STU2N62K3
Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP
More informationSTD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages TAB Features TAB IPAK 3 1 2 TAB 2 3 1 DPAK TO-220FP
More informationSTF40NF03L STP40NF03L
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features Type V DSS R DS(on) max I D STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationN-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
More informationN-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
More informationSTB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet
STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH Power MOSFET in D 2 PAK, TO-220, TO-220FP and TO-247 packages TAB TAB Features 3 1 2 D PAK TO-220 1
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationObsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
More informationSTF24N60M2, STFI24N60M2, STFW24N60M2
STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAKFP and TO-3PF packages Features Datasheet production data Order codes V
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More informationSTI260N6F6 STP260N6F6
STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
More informationSTP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More information