Features. Description. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube
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1 N-channel 650 V, Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V T Jmax R DS(on) max I D STW38N65M V Ω 30 A Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Figure 1: Internal schematic diagram Drain(1) Applications High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kw battery chargers Gate(4) Driver source(3) Power source(2) ND1PS2DS3G4 Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the wellknown PowerMESH horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube April 2016 DocID Rev 1 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
2 Contents STW38N65M5-4 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curve) Test circuits Package information TO247-4 package information Revision history /13 DocID Rev 1
3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V GS Gate- source voltage ±25 V I D Drain current (continuous) at T C = 25 C 30 A I D Drain current (continuous) at T C = 100 C 19 A I DM (1) Drain current (pulsed) 120 A P TOT Total dissipation at T C = 25 C 190 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns T stg T j Storage temperature range Operating junction temperature range Notes: (1) Pulse width limited by safe operating area (2) ISD 30 A, di/dt = 400 A/µs, V DS(peak) < V (BR)DSS, V DD = 400 V (3) VDS 520 V - 55 to 150 C Table 3: Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 0.66 C/W R thj-amb Thermal resistance junction-ambient max 50 C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) Single pulse avalanche energy (starting T J = 25 C, I D = I AR, V DD = 50 V) 8 C/W 660 mj DocID Rev 1 3/13
4 Electrical characteristics STW38N65M5-4 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current I D = 1 ma, V GS = V V DS = 650 V 1 µa V GS = 0, V DS = 650 V, (1) 100 µa T C=125 C V DS = 0, V GS = ± 25 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drain-source on- resistance Notes: (1) Defined by design, not subject to production test V GS = 10 V, I D = 15 A Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 100 V, f = 1 MHz, pf C rss Reverse transfer V GS = 0 capacitance pf Equivalent capacitance time related V GS = 0, V DS = 0 to 520 V pf Equivalent capacitance energy related pf R G Intrinsic gate resistance f = 1 MHz, I D=0 A Ω Q g Total gate charge V DD = 520 V, I D = 15 A, nc Q gs Gate-source charge V GS = 10 V (see Figure 16: nc Q gd Gate-drain charge "Gate charge test circuit") nc C o(tr) (1) C o(er) (2) Notes: (1) Co(tr) is a constant capacitance value that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. (2) Co(er) is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to 80% V DSS. 4/13 DocID Rev 1
5 Electrical characteristics Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(v) Voltage delay time V DD = 400 V, I D = 20 A, ns t r(v) Voltage rise time R G = 4.7 Ω, V GS = 10 V ns (see Figure 17: " Test circuit for t f(i) Current fall time inductive load switching and diode ns t c(off) Crossing time recovery times" and Figure 20: "Switching time waveform") ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 30 A Source-drain current (pulsed) A I SDM (1) V SD (2) Forward on voltage I SD = 30 A, V GS = V t rr Reverse recovery time I SD = 30 A, ns Q rr I RRM Reverse recovery charge Reverse recovery current di/dt = 100 A/µs V DD = 100 V (see Figure 20: "Switching time waveform") t rr Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 30 A, di/dt = 100 A/µs V DD = 100 V, T j = 150 C (see Figure 20: "Switching time waveform") Q rr I RRM Notes: (1) Pulse width limited by safe operating area (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% µc - 35 A ns µc - 40 A DocID Rev 1 5/13
6 Electrical characteristics 2.2 Electrical characteristics (curve) Figure 2: Safe operating area AM12636v1 ID (A) STW38N65M5-4 Figure 3: Thermal impedance Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Sinlge pulse VDS(V) 10µs 100µs 1ms 10ms Figure 4: Output characteristics ID (A) VGS = 10 V 80 VGS = 8 V AM12637v1 ID (A) 80 Figure 5: Tranfer characteristics AM12638v1 60 VGS = 7 V 60 VDS= 25V VGS = 6 V VDS(V) VGS(V) Figure 6: Gate charge vs gate-source voltage AM12639v1 VGS VDS (V) VDD=520V (V) ID=15A VDS 400 Figure 7: Static drain-source on-resistance Qg(nC) 6/13 DocID Rev 1
7 Figure 8: Capacitance variations C (pf) AM12641v1 Electrical characteristics Figure 9: Output capacitance stored energy AM12642v1 Eoss (µj) Ciss Coss 10 Crss VDS(V) VDS(V) Figure 10: Normalized gate threshold voltage vs temperature VGS(th) AM05459v1 (norm) 1.10 ID = 250 µa 1.00 Figure 11: Normalized on-resistance vs temperature RDS(on) (norm) VGS = 10 V ID = 15 A AM05460v TJ( C) TJ( C) Figure 12: Source-drain diode forward characteristics VSD AM05461v1 (V) TJ=-50 C TJ=25 C 0.6 TJ=150 C ISD(A) Figure 13: Normalized V (BR)DSS vs temperature V(BR)DSS AM10399v1 (norm) 1.08 ID = 1mA TJ( C) DocID Rev 1 7/13
8 Electrical characteristics Figure 14: Switching energy vs gate resistance E (µj) ID=20A VDD=400V Eon AM18024v1 STW38N65M Eoff RG(Ω) E on including reverse recovery of a SiC diode. 8/13 DocID Rev 1
9 Test circuits 3 Test circuits Figure 15: Switching times test circuit for resistive load Figure 16: Gate charge test circuit VDD VGS VD RG RL + D.U.T µf 3.3 µf VDD Vi VGS µf 12V IG=CONST 2.7kΩ 47kΩ 100nF 100Ω 1kΩ D.U.T. VG PW 47kΩ GND1 (driver signal) GND2 (power) AM15855v1 PW 1kΩ GND1 GND2 AM15856v1 Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit 25Ω G A D D.U.T. S B A FAST DIODE B A B L=100µH D µf + µf VDD VD L µf 3.3 µf VDD G ID RG S D.U.T. Vi D.U.T. GND1 GND2 AM15857v1 Pw GND1 GND2 AM15858v1 Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform Id Concept waveform for Indu ctive Load Turn-off 90%Vds 90%Id Tdelay -off Vgs 90%Vgs on Vgs(I(t )) 10%Vds 10%Id Vds Trise Tfall Tcross -over AM05540v2_for_M5 DocID Rev 1 9/13
10 Package information STW38N65M5-4 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 21: TO247-4 package outline 10/13 DocID Rev 1
11 Package information Table 9: TO247-4 mechanical data mm. Dim. Min. Typ. Max. A A A b b b c c D D D D E E E E e e L P P P Q S 6.15 T U DocID Rev 1 11/13
12 Revision history STW38N65M5-4 5 Revision history Table 10: Document revision history Date Revision Changes 20-Apr Initial release. 12/13 DocID Rev 1
13 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 1 13/13
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Nchannel 30 V, 0.02 Ω typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 2 3 STL6N3LLH6 30 V 0.025Ω (V GS= 0 V) 0.04Ω
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
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Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2
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N-channel 30 V, 0.0027 Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V DS R DS(on) max I D STL23NS3LLH7 30 V 0.0037
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N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
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N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
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STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB
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Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD7NM60N STF7NM60N 600 V 0.9 Ω 5 A DPAK TO-220FP
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N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
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STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code V DS R DS(on) max. I D STF14N80K5 STFI14N80K5
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel
N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
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STF18N6M2 N-channel 6 V,.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF18N6M2 65 V.28 Ω 13 A
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STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAKFP and TO-3PF packages Features Datasheet production data Order codes V
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N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
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Datasheet Nchannel 6 V, 15 mω typ., 25 A, MDmesh M6 Power MOSFET in a TO22FP package Features TO22FP D(2) 1 2 3 Order code V DS R DS(on) max. I D STF33N6M6 6 V 125 mω 25 A Reduced switching losses Lower
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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages TAB TAB Features DPAK 1 3 Order codes V DS R DS(on)
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N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP and I 2 PAKFP packages Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STF13N60M2 STFI13N60M2
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N-channel 650 V, 0.067 Ω typ., 35 A MDmesh V Power MOSFET in D 2 PAK, TO-220FP and TO-220 packages Datasheet production data TAB Features D 2 PAK TAB 2 3 1 1 2 3 TO-220FP Order codes V DSS @ T Jmax R DS(on)
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N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
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N-channel 100 V, 5 mω typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS R DS(on) max. I D P TOT STL110N10F7 100 V 6 mω 107 A 136 W Among the lowest R DS(on) on the
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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mω typ., 80 A STripFET F7 Power MOSFETs in D 2 PAK, DPAK, TO-220FP, I 2 PAK and TO-220 packages TAB TAB Features
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Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
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N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
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N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram
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STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
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More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh K5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID TAB IPAK 3 2 1 TO-220 1 2 3 STP3LN80K5 800 V
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N-channel 600 V, 4 Ω typ., 0.6 A MDmesh K3 Power MOSFET in a TO-92 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STQ2LN60K3-AP 600 V 4.5 Ω 0.6 A 2.5 W 1 TO-92 ammopack
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Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
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