STD2N62K3, STF2N62K3, STU2N62K3

Transcription

1 Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP G(1) D(2, TAB) STU2N62K3 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected IPAK S(3) AM01475V1 Applications Switching applications Product status link STD2N62K3 STF2N62K3 STU2N62K3 Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. DS Rev 3 - June 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value DPAK TO-220FP IPAK Unit V DS Drain-source voltage 620 V V GS Gate-source voltage ±30 V I D Drain current (continuous) at T C = 25 C (1) 2.2 A I D Drain current (continuous) at T C = 100 C 1 1 (1) 1 A I (2) DM Drain current (pulsed) 8.8 A P TOT Total dissipation at T C = 25 C W V ISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, T C = 25 C) V dv/dt (3) Peak diode recovery voltage slope 12 V/ns T j T stg Operating junction temperature range Storage temperature range -55 to 150 C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 2.2 A, di/dt 400 A/μs, V DSpeak V (BR)DSS, V DD = 80% V (BR)DSS. Table 2. Thermal data Symbol Parameter Value DPAK TO-220FP IPAK Unit R thj-case Thermal resistance junction-case C/W R thj-amb Thermal resistance junction-ambient C/W R (1) thj-pcb Thermal resistance junction-pcb 50 C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I (1) AR Avalanche current, repetitive or not-repetitive 2.2 A E (2) AS Single pulse avalanche energy 85 mj 1. Pulse width limited by T j max. 2. Starting T j = 25 C, I D = I AR, V DD = 50 V. DS Rev 3 page 2/27

3 Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current Gate body leakage current I D = 1 ma, V GS = 0 V 620 V V GS = 0 V, V DS = 620 V 1 µa V GS = 0 V, V DS = 620 V, T C = 125 C (1) 50 µa V DS = 0 V, V GS = ±20 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 1.1 A Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 340 C oss Output capacitance V DS = 50 V, f = 1 MHz, V GS = 0 V 26 - C rss Reverse transfer capacitance 4 - pf C o(tr) (1) Equivalent capacitance time related V DS = 0 to 496 V, V GS = 0 V pf R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 496 V, I D = 2.2 A, V GS = 0 to 10 V 15 Q gs Gate-source charge (see Figure 17. Test circuit for gate charge - 3 Q gd Gate-drain charge behavior) 9 - nc 1. C o(tr) is a constant capacitance value that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD = 310 V, I D = 1.1 A, R G = 4.7 Ω, V GS = 10 V - (see Figure 16. Test circuit for resistive load switching times and Figure 21. Switching time waveform) ns DS Rev 3 page 3/27

4 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) Source-drain current Source-drain current (pulsed) A V (2) SD Forward on voltage I SD = 2.2 A, V GS = 0 V V t rr Reverse recovery time I SD = 2.2 A, di/dt = 100 A/µs 200 ns Q rr Reverse recovery charge V DD = 60 V (see Figure 18. Test circuit for μc I RRM Reverse recovery current inductive load switching and diode recovery times) 9 A t rr Reverse recovery time I SD = 2.2 A, di/dt = 100 A/µs 240 ns Q rr Reverse recovery charge V DD = 60 V, T j = 150 C(see Figure 18. Test μc I RRM Reverse recovery current circuit for inductive load switching and diode recovery times) 10 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I gs = ±1 ma, I D = 0 A ±30 V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS Rev 3 page 4/27

5 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK and IPAK Figure 2. Thermal impedance for DPAK and IPAK ID (A) 10 1 Tj=150 C Tc=25 C Single pulse AM09181v Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 10ms VDS(V) Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP ID (A) Operation in this area is Limited by max RDS(on) Tj = 150 C Tc = 25 C Single pulse AM09182v1 10µs 100µs 1ms 10ms K δ=0.5 δ= Single pulse GC20940_ZTH VDS(V) tp(s) Figure 5. Output characterisics Figure 6. Transfer characteristics DS Rev 3 page 5/27

6 Electrical characteristics curves Figure 7. Gate charge vs gate-source voltage Figure 8. Static drain-source on-resistance VGS (V) 12 VDS VDD=496V ID=2.2A AM09186v1 VDS (V) Qg(nC) Figure 9. Capacitance variations Figure 10. Output capacitance stored energy C (pf) AM09188v1 Ciss Coss Crss VDS(V) Figure 11. Normalized gate threshold voltage vs temperature VGS(th) (norm) ID=50µA AM09190v TJ( C) Figure 12. Normalized on-resistance vs temperature RDS(on) (norm) ID=1.1A VGS=10V AM09191v TJ( C) DS Rev 3 page 6/27

7 Electrical characteristics curves Figure 13. Source-drain diode forward characteristics Figure 14. Normalized V (BR)DSS vs temperature V (BR)DSS (norm) 1.10 ID=1mA AM09192v TJ( C) Figure 15. Maximum avalanche energy vs starting T j EAS (mj) AM09180v1 90 ID=2.2 A 80 VDD=50 V TJ( C) DS Rev 3 page 7/27

8 Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD VD RL μf 3.3 μf VDD VGS 12 V IG= CONST 47 kω 100 Ω 100 nf D.U.T. 1 kω VGS pulse width RG D.U.T. pulse width 2200 μf kω 47 kω VG 1 kω AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B A fast diode B A B G 100 µh D µf + µf VDD D.U.T. VD ID L µf 3.3 µf VDD + _ RG S Vi pulse width D.U.T. AM01471v1 AM01470v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton toff VD td(on) tr td(off) tf IDM 90% 10% 90% ID 0 10% VDS VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS Rev 3 page 8/27

9 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 3 page 9/27

10 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 22. DPAK (TO-252) type A package outline _A_25 DS Rev 3 page 10/27

11 DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e e H L (L1) L L R 0.20 V2 0 8 DS Rev 3 page 11/27

12 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 23. DPAK (TO-252) type C package outline _C_25 DS Rev 3 page 12/27

13 DPAK (TO-252) type C package information Table 10. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e H L L REF L L BSC L L BSC θ θ V2 0 8 DS Rev 3 page 13/27

14 DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 24. DPAK (TO-252) type E package outline _type-E_rev.25 DS Rev 3 page 14/27

15 DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e e H L L L L Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_ _25 DS Rev 3 page 15/27

16 DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 DS Rev 3 page 16/27

17 DPAK (TO-252) packing information Figure 27. DPAK (TO-252) reel outline B 40mm min. access hole at slot location T D C A N Full radius Tape slot in core for tape start 2.5mm min.width G measured at hub AM06038v1 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W DS Rev 3 page 17/27

18 TO-220FP package information 4.5 TO-220FP package information Figure 28. TO-220FP package outline _Rev_12_B DS Rev 3 page 18/27

19 TO-220FP package information Table 13. TO-220FP package mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia DS Rev 3 page 19/27

20 IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 29. IPAK (TO-251) type A package outline _IK_typeA_rev14 DS Rev 3 page 20/27

21 IPAK (TO-251) type A package information Table 14. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. Max. A A b b b B c c D E e 2.28 e H L L L V1 10 DS Rev 3 page 21/27

22 IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 30. IPAK (TO-251) type C package outline _IK_typeC_rev14 DS Rev 3 page 22/27

23 IPAK (TO-251) type C package information Table 15. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A A b b b c c D D E E e e H L L L θ θ DS Rev 3 page 23/27

24 Ordering information 5 Ordering information Table 16. Order codes Order code Marking Package Packing STD2N62K3 DPAK Tape and reel STF2N62K3 STU2N62K3 2N62K3 TO-220FP IPAK Tube DS Rev 3 page 24/27

25 Revision history Table 17. Document revision history Date Version Changes 31-May First release 20-Mar Jun Added new package: D²PAK Table 1: Device summary, Section 4: Package mechanical data and Section 5: Packaging mechanical data have been modified. Minor text changes. The part numbers STB2N62K3 and STP2N62K3 have been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics, Section 2.1 Electrical characteristics curves and Section 4 Package information. Minor text changes. DS Rev 3 page 25/27

26 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics curves Test circuits Package information DPAK (TO-252) type A package information DPAK (TO-252) type C package information DPAK (TO-252) type E package information DPAK (TO-252) packing information TO-220FP package information IPAK (TO-251) type A package information IPAK (TO-251) type C package information Ordering information...24 Revision history...25 DS Rev 3 page 26/27

27 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 3 page 27/27