STF6N65K3, STFI6N65K3, STU6N65K3
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1 N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, IPAK Features Datasheet production data Order codes V DSS R DS(on) max. I D Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω 5.4 A 30 W TAB STU6N65K3 100% avalanche tested Extremely high dv/dt capability 110 W TO-220FP I²PAKFP IPAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Applications D(2,TAB) Switching applications Description G(1) These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF6N65K3 TO-220FP STFI6N65K3 6N65K3 I²PAKFP Tube STU6N65K3 IPAK November 2012 Doc ID Rev 2 1/16 This is information on a product in full production. 16
2 Contents STF6N65K3, STFI6N65K3, STU6N65K3 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /16 Doc ID Rev 2
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO-220FP I²PAKFP IPAK Unit V DS Drain-source voltage 650 V V GS Gate- source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 5.4 (1) 5.4 A I D Drain current (continuous) at T C = 100 C 3 (1) 3 A I (2) DM Drain current (pulsed) 21.6 (1) 21.6 A P TOT Total dissipation at T C = 25 C W Avalanche current, repetitive or notrepetitive (pulse width limited by T j I AR 5.4 A max) E AS ESD dv/dt (3) V ISO 1. Limited by package Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) Gate-source human body model (C = 100 pf, R = 1.5 kω) 2. Pulse width limited by safe operating area 3. I SD 5.4 A, di/dt 400 A/µs, V DD = 80% V (BR)DSS 100 mj 2.5 kv Peak diode recovery voltage slope 12 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) 2500 V T stg Storage temperature -55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value TO-220FP I²PAKFP IPAK Unit R thj-case Thermal resistance junction-case max C/W R thj-amb Thermal resistance junction-ambient max C/W Doc ID Rev 2 3/16
4 Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D = 1 ma, V GS = V V DS = 650 V V DS = 650 V, T C =125 C µa µa V GS = ± 20 V ± 9 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 µa V R DS(on Static drain-source on-resistance V GS = 10 V, I D = 2.7 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss (1) C o(tr) (2) C o(er) R G Q g Q gs Q gd Input capacitance Output capacitance Reverse transfer capacitance Eq. capacitance time related Eq. capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge V DS = 50 V, f = 1 MHz, V GS = 0 - V GS = 0, V DS = 0 to 520 V pf pf pf pf pf f = 1 MHz open drain Ω V DD = 500 V, I D = 5.4 A, V GS = 10 V (see Figure 18) nc nc nc 1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 2. C oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V D S increases from 0 to 80% V DSS 4/16 Doc ID Rev 2
5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off-delay time Fall time V DD = 325 V, I D = 2.7 A, R G = 4.7 Ω, V GS = 10 V (see Figure 17) ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 5.4 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 5.4 A, di/dt = 100 A/µs V DD = 60 V (see Figure 22) I SD = 5.4 A, di/dt = 100 A/µs V DD = 60 V, T j = 150 C (see Figure 22) A A ns nc A ns nc A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage Igs=± 1 ma, I D =0 (open drain) 30 - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components Doc ID Rev 2 5/16
6 Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP and I²PAKFP Figure 3. Thermal impedance for TO-220FP and I²PAKFP ID (A) 10 AM12960v1 Tj=150 C Tc=25 C Single pulse Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 10ms VDS(V) Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK ID (A) 10 1 Operation in this area is Limited by max RDS(on) AM12961v1 Tj=150 C Tc=25 C Single pulse 10µs 100µs 1ms 10ms VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics ID (A) 12 VGS=10V AM12962v1 ID (A) 10 VDS=15V AM12963v V VDS(V) VGS(V) 6/16 Doc ID Rev 2
7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance VGS (V) VDS VDD=500V ID=5.4A AM12964v1 VDS (V) Qg(nC) RDS(on) (Ω) 1.35 VGS=10V AM12965v ID(A) Figure 10. Capacitance variations Figure 11. Output capacitance stored energy C (pf) AM12966v1 Eoss (µj) AM12967v Ciss Coss 2 10 Crss VDS(V) VDS(V) Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature VGS(th) (norm) 1.10 ID=50µA VDS=VGS AM12968v1 RDS(on) (norm) 2.5 VGS=10V ID=2.7A AM12969v TJ( C) TJ( C) Doc ID Rev 2 7/16
8 Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 Figure 14. Normalized BV DSS vs temperature Figure 15. Source-drain diode forward characteristics BVDSS (norm) ID=1mA AM12970v1 VSD (V) AM12971v1 TJ=-50 C TJ=25 C TJ=150 C TJ( C) ISD(A) Figure 16. Maximum avalanche energy vs temperature EAS (mj) 100 ID=5.4 A VDD=50 V AM12972v TJ( C) 8/16 Doc ID Rev 2
9 Test circuits 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 Doc ID Rev 2 9/16
10 Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 9. Dim. TO-220FP mechanical data mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia /16 Doc ID Rev 2
11 Package mechanical data Figure 23. TO-220FP drawing _Rev_K_B Doc ID Rev 2 11/16
12 Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3 Table 10. Dim. I 2 PAKFP (TO-281) mechanical data mm Min. Typ. Max. A B D D E F F G H L L L L L L Figure 24. I 2 PAKFP (TO-281) drawing 12/16 Doc ID Rev 2
13 Package mechanical data Table 11. DIM. IPAK (TO-251) mechanical data mm. min. typ max. A A b b b B5 0.3 c c D E e 2.28 e H L L L V1 10 o Doc ID Rev 2 13/16
14 Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3 Figure 25. IPAK (TO-251) drawing _J 14/16 Doc ID Rev 2
15 Revision history 5 Revision history Table 12. Document revision history Date Revision Changes 05-Apr First release 07-Nov Added new part numbers: STFI6N65K3 in I²PAKFP package and STU6N65K3 in IPAK packages. Section 2.1: Electrical characteristics (curves) has been updated. Minor text changes. Doc ID Rev 2 15/16
16 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 Doc ID Rev 2
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N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
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Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
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