Features. Features. Description. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT 8x8 HV Tape and reel
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1 N-channel 600 V, Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V T Jmax R DS(on)max I D 5 STL33N60M2 650 V Ω 22 A PowerFLAT 8x8 HV Features Extremely low gate charge Excellent output capacitance (C OSS ) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT 8x8 HV Tape and reel November 2015 DocID Rev 3 1/15 This is information on a product in full production.
2 Contents STL33N60M2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data PowerFLAT 8x8 HV package mechanical data Packaging mechanical data PowerFLAT 8x8 HV packaging mechanical data Revision history /15 DocID Rev 3
3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D (1) I D (1) I DM (2) Drain current (continuous) at T C = 25 C 22 A Drain current (continuous) at T C = 100 C 13.8 A Drain current (pulsed) 88 A P TOT Total dissipation at T C = 25 C 150 W I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 4 A 1100 mj dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns T stg Storage temperature - 55 to 150 C T j Operating junction temperature 150 C Notes: (1) The value is limited by package. (2) Pulse width limited by safe operating area. (3) ISD 22 A, di/dt 400 A/µs, V DS(peak) < V (BR)DSS, V DD = 400 V. (4) VDS 480 V. Table 3: Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 0.83 C/W R thj-amb (1) Thermal resistance junction-ambient max 45 C/W Notes: (1) When mounted on FR-4 board of inch², 2oz Cu. DocID Rev 3 3/15
4 Electrical characteristics STL33N60M2 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS V GS(th) R DS(on) Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on- resistance V GS = 0, I D = 1 ma 600 V V GS = 0, V DS = 600 V 1 µa V GS = 0, V DS = 600 V, T C=125 C 100 µa V DS = 0, V GS = ± 25 V ±10 µa V DS = V GS, I D = 250 µa V V GS = 10 V, I D = 11 A Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 100 V, f = 1 MHz, pf Reverse transfer V GS = 0 C rss pf capacitance C oss eq. (1) R G Equivalent output capacitance Intrinsic gate resistance V DS = 0 to 480 V, V GS = pf f = 1 MHz open drain Ω Q g Total gate charge V DD = 480 V, I D = 26 A nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 15: "Gate charge test circuit") nc Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% V DSS. Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 300 V, I D = 13 A ns t r Rise time R G = 4.7 Ω, V GS = 10 V ns t d(off) Turn-off delay time (see Figure 14: "Switching times test circuit for resistive ns t f Fall time load") ns 4/15 DocID Rev 3
5 Table 7: Source drain diode Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 22 A I SDM (1) V SD (2) Source-drain current (pulsed) - 88 A Forward on voltage I SD = 26 A, V GS = V t rr Reverse recovery time I SD = 26 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V (see Figure 17: " Unclamped inductive load µc I RRM Reverse recovery current test circuit") - 30 A t rr Reverse recovery time I SD = 26 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V, T j = 150 C µc I RRM Reverse recovery current (see Figure 17: " Unclamped inductive load test circuit") A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID Rev 3 5/15
6 Electrical characteristics 2.2 Electrical characteristics (curves) Figure 2: Safe operating area STL33N60M2 Figure 3: Thermal impedance K δ= Single pulse 0.01 Z th = K*R thj-c δ= t p /Ƭ 10-2 t p Ƭ tp(s) Figure 4: Output characteristics GIPG MT ID(A) VGS=7, 8, 9, 10V 60 6V Figure 5: Transfer characteristics GIPG MT ID (A) VDS=17V V V VDS(V) VGS(V) Figure 6: Gate charge vs gate-source voltage GIPG MT Figure 7: Static drain-source on-resistance GIPG MT RDS(on) (Ω) VGS=10V ID(A) 6/15 DocID Rev 3
7 Figure 8: Capacitance variations GIPG MT Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature GIPG MT Figure 10: Normalized on-resistance vs temperature RDS(on) GIPG MT (norm) VGS=10V TJ( C) Figure 11: Normalized V (BR)DSS vs temperature V(BR)DSS (norm) ID=1m A GIPG MT TJ( C) Figure 12: Source-drain diode forward characteristics GIPG MT VSD(V) Figure 13: Output capacitance stored energy GIPG MT TJ=-50 C TJ=150 C TJ=25 C ISD(A) DocID Rev 3 7/15
8 Test circuits STL33N60M2 3 Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit VGS VD RG RL + D.U.T µf 3.3 µf VDD PW GND1 (driver signal) GND2 (power) Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit 25Ω G A D D.U.T. S B A FAST DIODE B A B L=100µH D µf + µf VDD VD L µf 3.3 µf VDD G ID RG S D.U.T. Vi D.U.T. GND1 GND2 Pw GND1 GND2 AM15858v1 Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform 8/15 DocID Rev 3
9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DocID Rev 3 9/15
10 Package mechanical data 4.1 PowerFLAT 8x8 HV package mechanical data Figure 20: PowerFLAT 8x8 HV package outline STL33N60M _Rev_3_ A 10/15 DocID Rev 3
11 Dim. Package mechanical data Table 8: PowerFLAT 8x8 HV mechanical data mm Min. Typ. Max. A A A b D E D E E e 2.00 L Figure 21: PowerFLAT 8x8 HV footprint All dimensions are in millimeters. DocID Rev 3 11/15
12 Packaging mechanical data STL33N60M2 5 Packaging mechanical data 5.1 PowerFLAT 8x8 HV packaging mechanical data Figure 22: PowerFLAT 8x8 HV tape Figure 23: PowerFLAT 8x8 HV package orientation in carrier tape 12/15 DocID Rev 3
13 Figure 24: PowerFLAT 8x8 HV reel Packaging mechanical data DocID Rev 3 13/15
14 Revision history STL33N60M2 6 Revision history Table 9: Document revision history Date Revision Changes 26-Jun First release. 23-Jul Nov Updated the title, the features and the description in cover page. Document status promoted from preliminary data to production data. Updated Figure 1: "Internal schematic diagram", Section 1: "Electrical ratings", Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)" Updated Section 3: "Test circuits", Section 4.1: "PowerFLAT 8x8 HV package mechanical data".. Updated: cover image and Figure 1: "Internal schematic diagram" Table 2: "Absolute maximum ratings", Table 3: "Thermal data" and Table 6: "Switching times" Updated: Figure 3: "Thermal impedance" Updated: Section 5: "Test circuits" Updated: Section 6.1: "PowerFLAT 8x8 HV package mechanical data" Minor text changes 14/15 DocID Rev 3
15 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 3 15/15
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Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel
N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A 1 2 3 4 PowerFLAT
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
More informationOrder code V DS R DS(on) max. I D
Datasheet Nchannel 6 V, 15 mω typ., 25 A, MDmesh M6 Power MOSFET in a TO22FP package Features TO22FP D(2) 1 2 3 Order code V DS R DS(on) max. I D STF33N6M6 6 V 125 mω 25 A Reduced switching losses Lower
More informationN-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
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N-channel 30 V, 0.0016 Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D STL160NS3LLH7 30 V 0.0021
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube
N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
More informationOrder code V DS R DS(on) max. I D P TOT
Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2
More informationFeatures. Order code. Description. Table 1: Device summary Order code Marking Package Packing STL28N60DM2 28N60DM2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.155 Ω typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features 4 5 3 2 1 PowerFLAT 8x8 HV Figure 1: Internal schematic diagram Order code
More informationFeatures. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF7LN80K5 7LN80K5 TO-220FP Tube
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF7LN80K5 800 V 1.15 Ω 5 A 3 1 2 TO-220FP Figure 1:
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Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
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Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
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N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
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Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
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Datasheet N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package Features TAB Order code V DS R DS(on) max. I D DPAK D(2, TAB) 2 1 3 STD12NF06LT4 60 V 90 mω 12 A Exceptional dv/dt
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N-channel 30 V, 0.0027 Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D 30 V 0.0034 Ω 120 A Very
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
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N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package Datasheet - production data Features 1 2 3 4 Order code VDS RDS(on) max. ID STL3N65M2 650 V 1.8 Ω 2.3 A 8 7 6
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel
Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
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Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
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N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching
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N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
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N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest
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Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP
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STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
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N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
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N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram
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