Cosmic Ray Withstand Capability of RB-IGBT Utilizing different gate conditions
|
|
|
- Shon Cross
- 5 years ago
- Views:
Transcription
1 Cosmic Ray Withstand Capability of RB-IGBT Utilizing different gate conditions Daniel Hofmann ISPS 2016, August 31 st September 2 nd
2 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 2
3 Motivation Cosmic ray triggers a breakdown in power semiconductors High voltage applications are critical RB-IGBT device robustness to cosmic ray Determination of failure in time (FIT) Impact of gate conditions of RB-IGBT to FIT rate 3
4 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 4
5 IGBT device: NPT vs. RB-IGBT Theoretically, IGBT structure has reverse blocking capability N + Impurity conc. Gate Emitter N - drift P P + collector Collector A A P-type doping P-type doping N-type doping A A Forward Biased Otsuki. M., Presentation: The Power Electronics South America, 11 th 13 th of September 2012, Sao Paulo Reverse Biased 5
6 diced side-wall IGBT device: NPT vs. RB-IGBT Conventional IGBT and RB-IGBT Conventional active area termination RB-IGBT active area termination Otsuki. M., Presentation: The Power Electronics South America, 11 th 13 th of September 2012, Sao Paulo Side-wall protection 6
7 diced side-wall IGBT device: NPT vs. RB-IGBT Blocking capability Emitter = GND Forward Blocking State + Cracks active area Depletion region extension termination Collector = positive bias _ Reverse Blocking State _ Emitter = + active area termination Collector = negative bias Leakage current generation + Destruction of device Otsuki. M., Presentation: The Power Electronics South America, 11 th 13 th of September 2012, Sao Paulo 7
8 IGBT device: NPT vs. RB-IGBT Blocking capability 1. Electrical deactivated side-wall Stop leakage 2. Junction termination +/ bias capable design Emitter = GND active area termination Collector = positive bias Otsuki. M., Presentation: The Power Electronics South America, 11 th 13 th of September 2012, Sao Paulo 8
9 IGBT device: NPT vs. RB-IGBT Conventional IGBT Uni-directional Leakage current NPT or FS structure Cross-section of chip when reverse voltage is applied: RB-IGBT Reverse blocking capability NPT structure Junction isolation region Bi-directional switch (2x RB) M. Takei et al., Fuji Electric Journal, Vol. 75, No. 8,
10 IGBT device: NPT vs. RB-IGBT RB-IGBT has leakage current in reverse direction Reduce I ces by positive gate voltage 10
11 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 11
12 Effect of Cosmic Radiation Primary radiation spallation with atmosphere Secondary radiation generated Neutrons interact with nuclei of the device Ziegler, J.F.: Terrestrial Cosmic Ray Intensities. In: IBM Journal of Research and Development 42 (1998), Nr. 1, S
13 Effect of Cosmic Radiation Electron-hole plasma induced Neutron Gate electrode Emitter electrode Gate oxide n + Filamentary current p p n - e - p+ Short Circuit n + plasma p + 13
14 Effect of Cosmic Radiation Collector-Emitter Filamentation example FWD - Streamer Multi-avalanche effect Weiss et. al., Techn. University Munich, Infineon 14
15 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 15
16 Experimental Setup Set a target for the time to failure Let s assume 15years Within 15years only 1 system out of 100 systems should fail (1%) System is running for 12h per day 1FIT n n tot f t 1system 100 systems 12 h/d 365 d/y 15 y h h FIT 16
17 Experimental Setup Assume 1 system contains 6 IGBT modules Half bridge module in 2-Level operation Hence, FIT-rate per power module 152 FIT 25,3 FIT 6 power modules module 17
18 Experimental Setup Neutron beam source Parallel connection of devices (RB-IGBT) source forward reverse 18
19 Experimental Setup RB IGBT Gate conditions IGBT with parasitic thyristor PNP transistor FWD mode 19
20 Experimental Setup RB IGBT Gate conditions Emitter Gate _ IGBT with parasitic thyristor p+ n+ n+ p+ p p n- Depletion region p+ + Collector 20
21 Experimental Setup RB IGBT Gate conditions Emitter Gate + PNP transistor p+ n+ n+ p+ p p n- Depletion region p+ _ Collector 21
22 Experimental Setup RB IGBT Gate conditions Emitter Gate VGE=+15V Channel + FWD mode p+ n+ n+ p+ p p n- Depletion region p+ _ Collector 22
23 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 23
24 FIT rate per chip, 100% duty cycle Measurement Results FIT curves 50A/1200V (c) FWD mode (a) parasitic thyristor Usual appearance FWD: (b) PNP transistor not observed 24
25 Measurement Results Threshold of breakdown (a) parasitic thyristor (b) PNP transistor (c) FWD mode 25
26 Measurement Results Impact of E av(max) Left = foward direction ; Right = reverse biased Higher FIT in forward direction 26
27 Measurement Results Vge = +15V Higher threshold confirmed by several measurements No breakdown measured Vge = 0V Lower threshold Above threshold almost same FIT rate Forward Threshold at 800V (66%) 27
28 Topics - Overview 1. Motivation 2. IGBT Device: NPT vs. RB-IGBT 3. Effect of Cosmic Radiation 4. Experimental Setup 5. Measurement Results 6. Summary 28
29 Summary FIT rate of RB-IGBT under different gate conditions characterized Forward bias - Latch-up of parasitic thyristor (NPNP) Reverse bias FIT FWD mode and PNP transistor reveal similar FIT rate FWD mode has higher threshold 29
Analysis on IGBT Developments
Analysis on IGBT Developments Mahato G.C., Niranjan and Waquar Aarif Abu RVS College of Engineering and Technology, Jamshedpur India Abstract Silicon based high power devices continue to play an important
Cosmic Rays induced Single Event Effects in Power Semiconductor Devices
Cosmic Rays induced Single Event Effects in Power Semiconductor Devices Giovanni Busatto University of Cassino ITALY Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects
Today s subject MOSFET and IGBT
Today s subject MOSFET and IGBT 2018-05-22 MOSFET metal oxide semiconductor field effect transistor Drain Gate n-channel Source p-channel The MOSFET - Source Gate G D n + p p n + S body body n - drift
I E I C since I B is very small
Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while
Solid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
Fundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
2 Marks - Question Bank. Unit 1- INTRODUCTION
Two marks 1. What is power electronics? EE6503 POWER ELECTRONICS 2 Marks - Question Bank Unit 1- INTRODUCTION Power electronics is a subject that concerns the applications electronics principles into situations
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
Learning Material Ver 1.1
Insulated Gate Bipolar Transistor (IGBT) ST2701 Learning Material Ver 1.1 An ISO 9001:2008 company Scientech Technologies Pvt. Ltd. 94, Electronic Complex, Pardesipura, Indore - 452 010 India, + 91-731
Power Semiconductor Devices
TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.
A Study of Switching-Self-Clamping-Mode SSCM as an Over-voltage Protection Feature in High Voltage IGBTs
A Study of Switching-Self-Clamping-Mode SSCM as an Over-voltage Protection Feature in High Voltage IGBTs M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder ISPSD, May 2005, Santa Barbara, USA Copyright
THE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
Investigation of Short-circuit Capability of IGBT under High Applied Voltage Conditions
22 Special Issue Recent R&D Activities of Power Devices for Hybrid ElectricVehicles Research Report Investigation of Short-circuit Capability of under High Applied Voltage Conditions Tomoyuki Shoji, Masayasu
Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-
Lesson 5 Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Types and Connections Semiconductors Semiconductors If there are many free
High-power IGBT Modules
High-power IGBT Modules Takashi Nishimura Yoshikazu Takamiya Osamu Nakajima 1. Introduction To help curb global warming, clean energy, rather than fossil fuels, has been used increasingly in recent years.
UNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
Application Note. 3-Level Modules with Authentic RB-IGBT. Version 1.3
Application Note 3-Level Modules with Authentic RB-IGBT Version 1.3 1 Content 1. Introduction... 2 2. Basics of T-type IGBT modules... 3 3. Characteristics of authentic RB-IGBT... 5 4. Leakage current
IGBTs (Insulated Gate Bipolar Transistor)
IGBTs (Insulated Gate Bipolar Transistor) Description This document describes the basic structures, ratings, and electrical characteristics of IGBTs. It also provides usage considerations for IGBTs. 1
Lecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
REPETITIVE SHORT CIRCUIT BEHAVIOUR OF TRENCH-/FIELD-STOP IGBTS
REPETITIVE SHORT CIRCUIT BEHAVIOUR OF TRENCH-/FIELD-STOP IGBTS B. Gutsmann, P. Kanschat, M. Münzer, M. Pfaffenlehner 2, T. Laska 2 eupec GmbH, Max-Planck-Straße 5, D 5958 Warstein, Germany 2 Infineon-Technologies
Laboratory #5 BJT Basics and MOSFET Basics
Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments
EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:
1. Introduction Device structure and operation Structure Operation...
Application Note 96 February, 2 IGBT Basics by K.S. Oh CONTENTS. Introduction... 2. Device structure and operation... 2-. Structure... 2-2. Operation... 3. Basic Characteristics... 3-. Advantages, Disadvantages
ET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
Field - Effect Transistor
Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,
THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits
5.1 BJT Device Structure and Physical Operation
11/28/2004 section 5_1 BJT Device Structure and Physical Operation blank 1/2 5.1 BJT Device Structure and Physical Operation Reading Assignment: pp. 377-392 Another kind of transistor is the Bipolar Junction
Introduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
Bipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
T-series and U-series IGBT Modules (600 V)
T-series and U-series IGBT Modules (6 V) Seiji Momota Syuuji Miyashita Hiroki Wakimoto 1. Introduction The IGBT (insulated gate bipolar transistor) module is the most popular power device in power electronics
Switching-Self-Clamping-Mode SSCM, a breakthrough in SOA performance for high voltage IGBTs and Diodes
Switching-Self-Clamping-Mode, a breakthrough in SOA performance for high voltage IGBTs and M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder ISPSD, May 24, Kitakyushu, Japan Copyright [24] IEEE.
AN1491 APPLICATION NOTE
AN1491 APPLICATION NOTE IGBT BASICS M. Aleo (mario.aleo@st.com) 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of
F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics
![F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics](/thumbs/95/124107511.jpg "F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics")
F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics Time: 3 Hrs.] Prelim Question Paper Solution [Marks : 70 Q.1 Attempt any FIE of the following : [10] Q.1(a) Draw the symbols for (i)
FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)
FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there
CHAPTER I INTRODUCTION
CHAPTER I INTRODUCTION High performance semiconductor devices with better voltage and current handling capability are required in different fields like power electronics, computer and automation. Since
0 Operation principle of power semiconductors
0 Operation principle of power semiconductors 0 Operation principle of power semiconductors 0.1 Basic switching processes Apart from a few special applications, power semiconductors are mainly used in
IOLTS th IEEE International On-Line Testing Symposium
IOLTS 2018 24th IEEE International On-Line Testing Symposium Exp. comparison and analysis of the sensitivity to laser fault injection of CMOS FD-SOI and CMOS bulk technologies J.M. Dutertre 1, V. Beroulle
Power MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor,
FET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
Unit III FET and its Applications. 2 Marks Questions and Answers
Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric
Section 2.3 Bipolar junction transistors - BJTs
Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits
ME 4447 / 6405 Student Lecture. Transistors. Abiodun Otolorin Michael Abraham Waqas Majeed
ME 4447 / 6405 Student Lecture Transistors Abiodun Otolorin Michael Abraham Waqas Majeed Lecture Overview Transistor? History Underlying Science Properties Types of transistors Bipolar Junction Transistors
Electronic devices-i. Difference between conductors, insulators and semiconductors
Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit
Field Effect Transistors (npn)
Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal
U-series IGBT Modules (1,700 V)
U-series IGBT Modules (1,7 ) Yasuyuki Hoshi Yasushi Miyasaka Kentarou Muramatsu 1. Introduction In recent years, requirements have increased for high power semiconductor devices used in high power converters
SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
List of Experiments. 1. Steady state characteristics of SCR, IGBT and MOSFET. (Single phase half wave rectifier). (Simulation and hardware).
(Scheme-2013) List of Experiments 1. Steady state characteristics of SCR, IGBT and MOSFET 2. nalog and digital firing methods for SCR (Single phase half wave rectifier). (Simulation and hardware). 3. Full
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2
Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2 Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2 Diode 3 4 Zener diode Voltage-regulator diodes. This family of diodes exhibits
Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects
Insulated Gate Bipolar Transistor (IGBT)
nsulated Gate Bipolar Transistor (GBT) Comparison between BJT and MOS power devices: BJT MOS pros cons pros cons low V O thermal instability thermal stability high R O at V MAX > 400 V high C current complex
Electronics I. Midterm #1
EECS:3400 Electronics I s5ms_elct7.fm - Section Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no EECS:3400 Electronics I s5ms_elct7.fm - 2 Problem 4 points For full
Power Electronics Power semiconductor devices. Dr. Firas Obeidat
Power Electronics Power semiconductor devices Dr. Firas Obeidat 1 Table of contents 1 Introduction 2 Classifications of Power Switches 3 Power Diodes 4 Thyristors (SCRs) 5 The Triac 6 The Gate Turn-Off
Power Bipolar Junction Transistors (BJTs)
ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The
Avalanche Ruggedness of 800V Lateral IGBTs in Bulk Si
Avalanche Ruggedness of 800V Lateral IGBTs in Bulk Si Gianluca Camuso 1, Nishad Udugampola 2, Vasantha Pathirana 2, Tanya Trajkovic 2, Florin Udrea 1,2 1 University of Cambridge, Engineering Department
SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1
Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type
Structure of Actual Transistors
4.1.3. Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
FINALTERM EXAMINATION. Spring PHY301- Circuit Theory
Date 14/2/2013 Eini FINALTERM EXAMINATION Spring 2010 PHY301- Circuit Theory Time: 90 min Marks: 60 Question No: 1 If we connect 3 capacitors in parallel, the combined effect of all these capacitors will
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
Physics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
COMPARISON OF PT AND NPT CELL CONCEPT FOR 600V IGBTs
COMPARISON OF PT AND NPT CELL CONCEPT FOR 6V IGBTs R.Siemieniec, M.Netzel, * R.Herzer Technical University of Ilmenau, * SEMIKRON Elektronik GmbH Nürnberg, Germany Abstract. This paper presents a comparison
IGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager. Public Information
IGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager Agenda Introduction Semiconductor Technology Overview Applications Overview: Welding Induction
DISCUSSION The best way to test a transistor is to connect it in a circuit that uses the transistor.
Exercise 1: EXERCISE OBJECTIVE When you have completed this exercise, you will be able to test a transistor by forward biasing and reverse biasing the junctions. You will verify your results with an ohmmeter.
Analytical Chemistry II
Analytical Chemistry II L3: Signal processing (selected slides) Semiconductor devices Apart from resistors and capacitors, electronic circuits often contain nonlinear devices: transistors and diodes. The
Lecture Note on Switches Marc T. Thompson, 2003 Revised Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang
Lecture Note on Switches Marc T. Thompson, 2003 Revised 2007 Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang Lecture note on switches_tan_thompsonpage 1 of 21 1. DEVICES OVERVIEW... 4 1.1.
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
Transistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
Lecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
Semiconductors, ICs and Digital Fundamentals
Semiconductors, ICs and Digital Fundamentals The Diode The semiconductor phenomena. Diode performance with ac and dc currents. Diode types: General purpose LED Zener The Diode The semiconductor phenomena
Guidelines for CoolSiC MOSFET gate drive voltage window
AN2018-09 Guidelines for CoolSiC MOSFET gate drive voltage window About this document Infineon strives to enhance electrical systems with comprehensive semiconductor competence. This expertise is revealed
Prof. Steven S. Saliterman Introductory Medical Device Prototyping
Introductory Medical Device Prototyping Department of Biomedical Engineering, University of Minnesota http://saliterman.umn.edu/ Solid state power switching: Silicon controlled rectifiers (SCR or Thyristor).
Electronic Circuits I. Instructor: Dr. Alaa Mahmoud
Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere
Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004
Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field
Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.
UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT
Power Devices and ICs Chapter 15
Power Devices and ICs Chapter 15 Syed Asad Alam DA, ISY 4/28/2015 1 Overview 4/28/2015 2 Overview Types of Power Devices PNPN Thyristor TRIAC (Triode Alternating Current) GTO (Gate Turn-Off Thyristor)
TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta Road, Tirupati
ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL Subject Code : 17CA04305 Regulations : R17 Class : III Semester (ECE) CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta
From Things Left Out of Other Books on Basic Electronics 1999 H. Peeler
Semiconductors Semiconductors are materials that have (typically) four electrons in the valence shell. As such they are neither good conductors, nor are they good insulators. We have here the opportunity
IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
OBJECTIVE TYPE QUESTIONS
OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.
Next Generation Curve Tracing & Measurement Tips for Power Device. Kim Jeong Tae RF/uW Application Engineer Keysight Technologies
Next Generation Curve Tracing & Measurement Tips for Power Device Kim Jeong Tae RF/uW Application Engineer Keysight Technologies Agenda Page 2 Conventional Analog Curve Tracer & Measurement Challenges
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
Semiconductor Power Devices
Josef Lutz Heinrich Schlangenotto Uwe Scheuermann Rik De Doncker Semiconductor Power Devices Physics, Characteristics, Reliability Second Edition 123 Josef Lutz Chair Power Electronics and Electromagnetic
Chapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
Fuji IGBT Module V Series 1200V Family Technical Notes
Fuji IGBT Module V Series 200V Family Technical Notes RBSOA, SCSOA MT5F24325 2 High current output characteristics MT5F24326 3 4 Switching energy and Reverse recovery dv/dt with combination of Rg and Cge
8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
Electronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
DOWNLOAD PDF POWER ELECTRONICS DEVICES DRIVERS AND APPLICATIONS
Chapter 1 : Power Electronics Devices, Drivers, Applications, and Passive theinnatdunvilla.com - Google D Download Power Electronics: Devices, Drivers and Applications By B.W. Williams - Provides a wide
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for