Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
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1 Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
2 BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector) adjacent to each other the emitter (E) is heavily doped, the base (B) is thin and lightly doped, and the collector (C) is moderately doped
3 npn vs. pnp BJTs according to the doping materials used, BJT can be either npn or pnp the term bipolar indicates that both types of carriers (electrons and holes) are present in this type of transistors.
4 Biasing of the BJT the BJT is biased such that the base-emitter (BE) junction is forward-biased and the base-collector (BC) junction is reverebiased. This way of biasing put the BJT in the active mode.
5 Before Biasing 0.7 ev depletion region Emitter (n) Base (p) Collector (n) depletion regions are formed around both junctions the majority electron carriers in both emitter and collector can not roll-up the energy hills
6 Active Region Biasing I E ev n I C I E2 I B1 I B2 n Emitter Current (I E ): electrons of the emitter are now able to cross the BE junction \ Base Current (I B ): a small fraction of these electrons recombine with the few holes of the narrow base Collector Current (I C ): the rest of electrons roll-down the energy hill of the BC junction.
7 Transistor Currents the emitter current (I E ) equals the sum of the base (I B ) and collector (I C ) currents: I I I, where I I I E C B E C B these currents are related to each other using DC and DC ratios: I I DC C B DC DC DC current gain of the transistor ( ranges from 20 to 200), IC IC IC IB DC I I I I I 1 1 E C B C B DC ( ranges from 0.95 to 0.99). DC
8 DC Current Gain DC increases with small values of I C up to a certain maximum value and then decreases with large values of I C. DC increases monotonically with the temperature (T), as increasing temperature generates more electron-hole pairs, which increases the number of charge carriers and so as I C and DC.
9 Data Sheets Data sheets give manufacturer s specifications for maximum operating conditions, thermal, and electrical characteristics. For example, an electrical characteristic is DC, which is given as h FE. The 2N3904 shows a range of s on the data sheet from 100 to 300 for I C = 10 ma. ON Characteristics DC current gain ( I C = 0.1 ma dc, V CE = 1.0 V dc) ( I C = 1.0 ma dc, V CE = 1.0 V dc) ( I C = 10 ma dc, V CE = 1.0 V dc) ( I C = 50 ma dc, V CE = 1.0 V dc) ( I C = 100 ma dc, V CE = 1.0 V dc) Characteristic Symbol Min Max Unit 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 h FE
10 Current and Voltage Analysis BE junction is forward-biased BB E E BE B B DC B E BE B B B BB BE B DC E V BE 0.7 V V I R V I R I R V I R I V V R R DC current gain: I I C DC B Kirchhoff's current law on the transistor node: I I I E C B applying Kirchhoff's voltage law : V V I R I R CE CC C C E E knowing V and V : V V V BE CE CB CE BE
11 Modes of Operation of BJT
12 Collector Characteristic Curves V CE 0.7 V (Saturation region): in this region both BE and BC are forwardbiased. The higher V CE, the higher the directing electric field, and the higher the collector current.
13 Collector Curves (Cont d) 0.7 V V CE V CE(max) (Active region): in this region BE is forwardbiased and BC is reversebiased. The increase in V CE results in increasing the width of the BC depletion region, while its electric field remains the same, which leads to an almost constant collector current.
14 Characteristic Curves V CE V CE(max) (Breakdown region): The BC depletion region can not expand, and the increase in V CE results in an increase in the electric field and current. when I B = 0 I C 0 regardless of the value of V CE. This defines the cutoff region on the collector characteristic curves, in which both BE and BC are reverse-biased.
Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
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