EBERS Moll Model. Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University
|
|
- Sydney Park
- 5 years ago
- Views:
Transcription
1 EBERS Moll Model Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University
2 BJT Device Models The primary function of a model is to predict the behaviour of a device in particular operating region. Small-signal models Hybrid (h) Parameter Model Hybrid-pi model Large-signal models Ebers Moll model: Voltage & current control model Gummel Poon model : charge-control model
3 Ebers Moll Model The classic mathematical model for the bipolar junction transistor is the Ebers-Moll model formulated by J. J. Ebers and J. L. Moll from Bell Laboratories in the early Ebers-Moll model also known as Coupled Diode Model The Ebers-Moll model provides an alternative view or representation of the voltage-current equation model. Model includes configurationally series resistances, depletion Model includes configurationally series resistances, depletion capacitances and the charge carrier effects.
4 Ebers Moll model Designing Ebers Moll model for pnp transistor involves two ideal diodes placed back to back with saturation current I eo & I co and two current dependent controlled sources shunting the ideal diodes. Transistor currents and Voltages direction Ebers-moll model for a PNP transistor
5 Ebers Moll Model Equation By applying KCL to emitter node we get I E + α I I C = I or I E = I α I I C or I E = - α I I C + I I E = - α I I C + I 0 (e V E / V T 1) I E = -α I I C I E0 (e V E / V T 1)... (1) This model is valid for both forward & reverse static voltages applied across the transistor junction. In the above model, by making the base width much large than the diffusion length of minority carriers in the base, all minority carriers will recombine in the base and none will survive to reach the collector.
6 Ebers Moll Model Equation Let us see the equations of I c and I E from Ebers moll model. Applying KCL to the collector node, we get α N I E + I C = I I C = I α N I E I C = - α N I E + I ; Where, I is diode current. C N E I C = - α N I E + I 0 (e V c / V T 1) Note: I 0 = - I C0 ; Where, I 0 is the magnitude of reverse saturation current. I C = - α N I E I CO (e V C / V T ).. (2)
7 Ebers Moll model Parameters General expression for collector current I C of a transistor for any voltage across collector junction V c and emitter current I E is I C = -α N I N I CO (e V C / V T 1) Subscript N to α indicates that we are using transistor in a normal manner. When we interchange the role of emitter and collector we operate transistor in a inverted function. In such case current and junction voltage relationship for transistor is given by I E = - α I I C I EO (e v E / V T 1) Subscript I to α indicates that we are using transistor in a inverted manner, α I is the inverted common base current Gain. I EO: The emitter junction reverse saturation current. V E : The voltage drop from p side to N side at the emitter junction.
8 Forward Characteristics of the npn Transistor The total current crossing the emitter-base junction in the forward direction is described as (equation-1) Equation (1) Where IES represents the reverse saturation current of the base-emitter diode. Collector current can be rewritten in terms of IES as (equation-2) Equation (2) Forward common-base current gain αf represents the fraction of the emitter current that crosses the base and appears in the collector terminal.
9 Reverse Characteristics of the npn Transistor For the reverse direction, the current crossing the collector-base junction is described as (equation-3) Equation (3) The new parameter ICS represents the reverse saturation current of the base-emitter diode. The emitter current can be rewritten in terms of ICS as (equation-4) Equation (4) The reverse common-base current gain αr represents the fraction of the collector current that crosses the base from the emitter terminal.
10 Ebers-Moll Model for the npn Transistor Complete Ebers-Moll equations are obtained by combining Equations 1-4. Equation (5) This model contains four parameters, IES, ICS, αf, and αr. From the definitions of IES and ICS, we can obtain the important auxiliary relation Equation (6) which shows that there are only three independent parameters in the Ebers-Moll model, just as in the transport formulation. The base current, given by ib = ie ic, is Equation (7)
11 Equivalent Circuit Representations for the Ebers-Moll Models npn transistors
12 Equivalent Circuit Representations for the Ebers-Moll Models pnp transistors
13 Ebers Moll Operating Characteristic
14 BJT Ebers-Moll Model SPICE model: DC model SPICE uses the Ebers-Moll transistor model You know the following BJT equations:
15 Ebers-Moll model Versions
UNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationECE 442 Solid State Devices & Circuits. 6. Bipolar Transistors
ECE 442 Solid State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 Bipolar Junction
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationBipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
More informationAlexandria University Faculty of Engineering Electrical Engineering Department
Chapter 10: Alexandria University Faculty of Engineering Electrical Engineering Department ECE 336: Semiconductor Devices Sheet 6 1. A Si pnp BJT with N AE = 5x10 17 / cm 3, N DB = 10 15 /cm 3 and N AC
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
More informationBipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationExperiment 9 Bipolar Junction Transistor Characteristics
Experiment 9 Bipolar Junction Transistor Characteristics W.T. Yeung, W.Y. Leung, and R.T. Howe UC Berkeley EE 105 Fall 2005 1.0 Objective In this lab, you will determine the I C - V CE characteristics
More informationECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
More informationThe first transistor. (Courtesy Bell Telephone Laboratories.)
Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.) Fig. 3.2 Types of transistors: (a) pnp; (b) npn. : (a) pnp; : (b) npn Fig. 3.3 Forward-biased junction of a pnp transistor. Fig. 3.4
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationCOE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline
COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large
More informationDetermining BJT SPICE Parameters
Determining BJT SPICE Parameters Background Assume one wants to use SPICE to determine the frequency response for and for the amplifier below. Figure 1. Common-collector amplifier. After creating a schematic,
More informationC H A P T E R 6 Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationStructure of Actual Transistors
4.1.3. Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
More informationCommunication Microelectronics (W17)
Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-218 Lec-5: Bipolar Junction Transistor (BJT) Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Bipolar
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationElectronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationVALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationChapter Two "Bipolar Transistor Circuits"
Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-1 Transistor
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationLecture 16. The Bipolar Junction Transistor (I) Forward Active Regime. Outline. The Bipolar Junction Transistor (BJT): structure and basic operation
Lecture 16 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment:
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More informationEXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
More informationBipolar Junction Transistor (BJT)
Bipolar Junction Transistor (BJT) - three terminal device - output port controlled by current flow into input port Structure - three layer sandwich of n-type and p-type material - npn and pnp transistors
More informationElectronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018
Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode
More information4.1.3 Structure of Actual Transistors
4.1.3 Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
More informationLecture 4. Reading: Chapter EE105 Fall 2007 Lecture 4, Slide 1 Prof. Liu, UC Berkeley
Lecture 4 OUTLNE Bipolar Junction Transistor (BJT) General considerations Structure Operation in active mode Large-signal model and - characteristics Reading: Chapter 4.1-4.4.2 EE105 Fall 2007 Lecture
More informationMicroelectronic Circuits, Kyung Hee Univ. Spring, Bipolar Junction Transistors
Bipolar Junction Transistors 1 Introduction physical structure of the bipolar transistor and how it works How the voltage between two terminals of the transistor controls the current that flows through
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationIndex. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10
Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar
More informationBipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
More informationELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation
ELEC 3908, Physical Electronics, Lecture 16 Bipolar Transistor Operation Lecture Outline Last lecture discussed the structure and fabrication of a double diffused bipolar transistor Now examine current
More informationEEE118: Electronic Devices and Circuits
EEE118: Electronic Devices and Circuits Lecture XI James E Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Review Review Introduced the idea of a dynamic resistance
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationECE 3040 Dr. Alan Doolittle.
ECE 3040 Dr. Alan Doolittle I have thoroughly enjoyed meeting each of you and hope that I have had a positive influence on your carriers. Please feel free to consult with me in your future work. If I can
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationTransistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
More informationPHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationEE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process
330 Lecture 18 haracteristics of Finer Feature Size Processes ipolar Process How does the inverter delay compare between a 0.5u process and a 0.13u process? DD IN OUT IN OUT SS How does the inverter
More informationExperiment 2. 2 Current Flow in the BJT. 2.1 Summary. 2.2 Theory. ELEC 3908 Experiment 2 Student#:
Experiment 2 2 Current Flow in the BJT 2.1 Summary In this experiment, the HP4145 Semiconductor Parameter Analyser (SPA) test instrument is used to measure the current-voltage characteristics of a commercial
More informationESE319 Introduction to Microelectronics BJT Intro and Large Signal Model
BJT Intro and Large Signal Model 1 VLSI Chip Manufacturing Process 2 0.35 mm SiGe BiCMOS Layout for RF (3.5 GHz) Two-Stage Power Amplifier Each transistor above is realized as net of four heterojunction
More informationThe Bipolar Junction Transistor- Small Signal Characteristics
The Bipolar Junction Transistor- Small Signal Characteristics Debapratim Ghosh deba21pratim@gmail.com Electronic Systems Group Department of Electrical Engineering Indian Institute of Technology Bombay
More informationQUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.
FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:
More informationPower Bipolar Junction Transistors (BJTs)
ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationChapter 4 Physics of Bipolar Transistors. EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of Bipolar Transistor
EE105 - Spring 2007 Microelectronic Devices and ircuits Lecture 10 Bipolar ransistors hapter 4 Physics of Bipolar ransistors 4.1 General onsiderations 4.2 Structure of Bipolar ransistor 4.3 Operation of
More informationEE 330 Lecture 16. Comparison of MOS Processes Bipolar Process
330 Lecture 16 omparison of MOS Processes ipolar Process Review from last lecture P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! - Section Review from last lecture n-select
More informationECEN 325 Lab 7: Characterization and DC Biasing of the BJT
ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More information1 Introduction to analog CMOS design
1 Introduction to analog CMOS design This chapter begins by explaining briefly why there is still a need for analog design and introduces its main tradeoffs. The need for accurate component modeling follows.
More informationCapacitors, diodes, transistors
Capacitors, diodes, transistors capacitors charging and time response filters (impedance) semi-conductor diodes rectifiers transformers transistors CHM6158C - Lecture 3 1 Capacitors Symbol 2 Capacitors
More informationI E I C since I B is very small
Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while
More informationPHYSICS OF SEMICONDUCTOR DEVICES
PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical
More information5.1 BJT Device Structure and Physical Operation
11/28/2004 section 5_1 BJT Device Structure and Physical Operation blank 1/2 5.1 BJT Device Structure and Physical Operation Reading Assignment: pp. 377-392 Another kind of transistor is the Bipolar Junction
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationEE 434 Lecture 21. MOS Amplifiers Bipolar Devices
434 ecture MOS Amplifiers ipolar Devices Quiz 3 The quiescent voltage across the 5K resistor in the circuit shown was measured to be 3. ) Determine the quiescent output voltage ) Determine the small signal
More informationChapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh
Chapter 3: TRANSISTORS Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh OUTLINE Transistors Bipolar Junction Transistor (BJT) Operation of Transistor Transistor parameters Load Line Biasing
More informationL T P EE 441: Analog Electronics (EE/IE) (3 1 3) Theory Marks =100 Sessional Marks = 50 Laboratory Marks = 50 Time = 3 hours
EE 441: Analog Electronics (EE/IE) (3 1 3) 1. Bond Model of silicon crystal: Intrinsic carrier concentration, Effect of doping on carrier concentration. Holes and electrons, Majority and Minority carriers,
More informationAn Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005
An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as
More informationBipolar junction transistors.
Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,
More informationChapter 4 Bipolar Junction Transistors (BJTs)
Chapter 4 Bipolar Junction Transistors (BJTs) Introduction http://engr.calvin.edu/pribeiro_webpage/courses/engr311/311_frames.html Physical Structure and Modes of Operation A simplified structure of the
More informationMOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
More informationElectronic Circuits ELCT604 (Spring 2018) Lecture 2 BJT Amplifiers
Electronic Circuits ELCT604 (Spring 2018) Lecture 2 BJT Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Analog Voltage Amplifiers Circuit Design and Configurations 2 Objective
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationTransistors CHAPTER 3.1 INTRODUCTION
CHAPTER 3 Bipolar Junction Transistors 3. INTRODUCTION During the period 904 947, the vacuum tube was undoubtedly the electronic device of interest and development. In 904, the vacuum-tube diode was introduced
More informationEXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics
Name & Surname: ID: Date: EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Objectives: 1. To determine transistor type (npn, pnp),terminals, and material using a DMM 2. To graph the
More informationSKP Engineering College
SKP Engineering College Tiruvannamalai 606611 A Course Material on Electronic Devices By K.Vijayalakshmi Assistant Professor Electronics and Communication Engineering Department Electronics and Communication
More informationUNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
More informationEXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT
EXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT AIM: 1) To study different BJT DC biasing circuits 2) To design voltage divider bias circuit using NPN BJT SOFTWARE TOOL: PC
More information7. Bipolar Junction Transistor
41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor
More informationElectronics Review Flashcards
November 21, 2011 1 Op Amps 2 Diodes 3 Silicon 4 pn Junctions 5 BJTs 6 MOSFETs Open Loop Characteristics Open-Loop Op-Amp Characteristics (first-order model) Closed Loop Characteristics Closed-Loop Op-Amp
More informationChapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
More informationESE 319 MT Review
ESE 319 MT1 2010 Review 1)--> Physical operation of a BJT (layout, why currents are related, npn vs. pnp). 2)Cover the Eber's Mole Model for forward and reverse active configurations. (large signal model)
More informationMicroelectronic Circuits
SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago
More informationElectronic Circuits for Mechatronics ELCT 609 Lecture 5: BJT Voltage Amplifiers
Electronic Circuits for Mechatronics ELCT 609 Lecture 5: BJT Voltage Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 BJT Modes of Operation Electrical Equations of BJT 2 BJT
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
More informationMicroelectronics Circuit Analysis and Design
Neamen Microelectronics Chapter 6-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 6 Basic BJT Amplifiers Neamen Microelectronics Chapter 6-2 In this chapter, we will: Understand
More informationBasic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80
SYLLABUS BASIC ELECTRONICS Subject Code : /25 IA Marks : 20 Hrs/Week : 04 Exam Hrs. : 03 Total Hrs. : 50 Exam Marks : 80 Course objectives: The course objective is to make students of all the branches
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More information4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
More information