ECE 442 Solid State Devices & Circuits. 6. Bipolar Transistors
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1 ECE 442 Solid State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois ECE 342 Jose Schutt Aine 1
2 Bipolar Junction Transistor Bipolar Junction Transistor (BJT) First Introduced in 1948 (Bell labs) Consists of 2 pn junctions Has three terminals: emitter, base, collector ECE 342 Jose Schutt Aine 2
3 BJT Modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Forw. Active Forward Reverse Rev. Active Reverse Forward Saturation Forward Forward ECE 342 Jose Schutt Aine 3
4 BJT in Forward Active Mode (NPN) ECE 342 Jose Schutt Aine 4
5 Electrons are minority carriers in the base (p-type) n VBE / VT p(0) npoe Minority electrons will diffuse in the p-type base dnp( x) np(0) In AEqDn AEqDn dx W Collector current: Longitudinal Current Flow A E : cross section area of BEJ W: Effective width of base N A : doping concentration base D n : electron diffusivity q: electron charge I S i I I e C n S A qd n NW 2 E n i A v BE / V T i C is independent of v CB ECE 342 Jose Schutt Aine 5
6 Base Current Base current: Two components Hole injection into emitter i B1 Electron recombination in base i B2 i B1 AqDne 2 E p i N L D p : hole diffusivity in emitter L p : hole diffusion length in emitter N D : doping concentration of emitter Qn ib2 b D p v BE / V Q n : minority carrier charge in base b : minority carrier lifetime T n p (0) Base p n p (ideal) effective base width From area under triangle 2 1 AqWn E i Qn AEq np(0) W e 2 2N A v BE / V T ECE 342 Jose Schutt Aine 6
7 BJT Operation: Longitudinal and Base Currents Base current has two functions Feed recombination that occur in the base Support reverse injection Base current is small because Base is thin Has large lifetime Emitter is much more heavily doped than base Longitudinal current Depends (exponentially) on emitter junction voltage Is independent of collector junction voltage Field due to collector base voltage attracts carriers but has no effect on rate of attraction ECE 342 Jose Schutt Aine 7
8 BJT Operation: Current Gain Total Base current: i i i B B1 B2 is the common-emitter current gain D N W 1 W ib IS e Dn ND Lp 2 D n b 2 p A v / V Define a current gain such that ic ib Using previous relation for i C BE T In order to achieve a high gain we need D n : large L p : large N D : large N A : small W: small 1 2 Dp NA W 1 W D N L 2 D n D p n b Typically 50 < < 200 In special transistors, can be as high as 1000 ECE 342 Jose Schutt Aine 8
9 Current Gain Temperature Dependence ECE 342 Jose Schutt Aine 9
10 BJT Operation: Emitter Current Emitter current: i i i E C B 1 1 vbe / VT E C S i i I e Define such that 1 i C i E Using previous relation for i C 1 is the common-base current gain 0.99 ECE 342 Jose Schutt Aine 10
11 Structure of BJT s Collector surrounds emitter region electrons will be collected B C E ECE 342 Jose Schutt Aine 11
12 BJT Transistor Polarities NPN PNP ECE 342 Jose Schutt Aine 12
13 Ebers-Moll Model NPN Transistor I vbe / VT vbc / VT 1 S 1 S ie e I e F I ic IS e e R vbe / VT S vbc / VT 1 1 I I vbe / VT S vbc / VT 1 1 S ib e e F R F F R 1 R 1 F R Describes BJT operation in all of its possible modes ECE 342 Jose Schutt Aine 13
14 Common-Emitter Large-Signal Model Common terminal is common to input and output Common terminal is used as reference or ground ECE 342 Jose Schutt Aine 14
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