Chapter 3 Bipolar Junction Transistors (BJT)

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1 Chapter 3 Bipolar Junction Transistors (BJT)

2 Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches, including logic gates, random access memory (RAM), and microprocessors.

3 The Junction Transistor First BJT was invented early in 1948, Initially known simply as the junction transistor. It did not become practical until the early 1950s. The emitter and the collector layer is heavily doped, the base lightly doped. The outer layers have widths much greater than the sandwiched p- or n-type material.

4 Bipolar Junction Transistors (BJT) A bipolar transistor essentially consists of a pair of PN Junction diodes that are joined back-to-back. There are therefore two kinds of BJT, the NPN and PNP varieties. The three layers of the sandwich are conventionally called the Collector, Base, and Emitter.

5 The First BJT Transistor Size (3/8 L X 5/32 W X 7/32 H) No Date Codes. No Packaging.

6 Modern Transistors

7 Transistor Operation The basic operation will be described using the pnp transistor. The operation of the pnp transistor is exactly the same if the roles played by the electron and hole are interchanged. One p-n junction of a transistor is reverse-biased, whereas the other is forward-biased. Forward-biased junction of a pnp transistor Reverse-biased junction of a pnp transistor

8 Both biasing potentials have been applied to a pnp transistor and resulting majority and minority carrier flows indicated. Majority carriers (+) will diffuse across the forwardbiased p-n junction into the n-type material. A very small number of carriers (+) will through n-type material to the base terminal. Resulting IB is typically in order of microamperes. The large number of majority carriers will diffuse across the reverse-biased junction into the p-type material connected to the collector terminal.

9 Majority carriers can cross the reverse-biased junction because the injected majority carriers will appear as minority carriers in the n-type material. Applying KCL to the transistor : I E = I C + I B The comprises of two components the majority and minority carriers I C = I Cmajority + I COminority I CO is I C current with emitter terminal open and is called leakage current.

10 Common-Base Configuration Common-base terminology is derived from the fact that the : - base is common to both input and output of the configuration. - base is usually the terminal closest to or at ground potential. All current directions will refer to conventional (hole) flow and the arrows in all electronic symbols have a direction defined by this convention.

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12 To describe the behavior of common-base amplifiers requires two set of characteristics: - Input or driving point characteristics. - Output or collector characteristics The output characteristics has 3 basic regions: - Active region defined by the biasing arrangements - Cutoff region region where the collector current is 0A - Saturation region- region of the characteristics to the left of V CB = 0V

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14 The curves (output characteristics) clearly indicate that a first approximation to the relationship between IE and IC in the active region is given by I C IE Once a transistor is in the on state, the base-emitter voltage will be assumed to be V BE = 0.7V

15 In the dc mode the level of I C and I E due to the majority carriers are related by a quantity called alpha IC α= IE I C = αi E + I CBO It can then be summarize to I C = αi E (ignore I CBO due to small value) Alpha a common base current gain factor that shows the efficiency by calculating the current percent from current flow from emitter to collector. The value of α is typical from 0.9 ~

16 Biasing Proper biasing CB configuration in active region by approximation I C I E (I B 0 ua)

17 Common-Emitter Configuration It is called common-emitter configuration since : - emitter is common or reference to both input and output terminals. - emitter is usually the terminal closest to or at ground potential. Almost amplifier design is using connection of CE due to the high gain for current and voltage. Two set of characteristics are necessary to describe the behavior for CE ;input (base terminal) and output (collector terminal) parameters.

18 Proper Biasing common-emitter configuration in active region

19 I B is microamperes compared to miliamperes of I C. I B will flow when V BE > 0.7V for silicon and 0.3V for germanium Before this value I B is very small and no I B. Base-emitter junction is forward bias Increasing V CE will reduce I B for different values. Input characteristics for a common-emitter NPN transistor

20 Output characteristics for a common-emitter npn transistor For small V CE (V CE < V CESAT, I C increase linearly with increasing of V CE V CE > V CESAT I C not totally depends on V CE constant I C I B (ua) is very small compare to I C (ma). Small increase in I B cause big increase in I C I B =0 A I CEO occur.

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22 Beta (β) or amplification factor The ratio of dc collector current (IC) to the dc base current (IB) is dc beta (βdc ) which is dc current gain where IC and IB are determined at a particular operating point, Q- point (quiescent point). It s define by the following equation: 30 < βdc < 300 2N3904

23 For ac conditions an ac beta has been defined as the changes of collector current (I C ) compared to the changes of base current (I B ) where I C and I B are determined at operating point. It can defined by the following equation:

24 Common Collector Configuration Also called emitter-follower (EF). It is called common-emitter configuration since both the signal source and the load share the collector terminal as a common connection point. The output voltage is obtained at emitter terminal. The input characteristic of common-collector configuration is similar with common-emitter. configuration. Common-collector circuit configuration is provided with the load resistor connected from emitter to ground. It is used primarily for impedance-matching purpose since it has high input impedance and low output impedance.

25 Notation and symbols used with the common-collector configuration: (a) pnp transistor ; (b) npn transistor.

26 For the common-collector configuration, the output characteristics are a plot of I E vs V CE for a range of values of I B.

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