Electronics I. Midterm #1
|
|
- Morgan Harper
- 5 years ago
- Views:
Transcription
1 EECS:3400 Electronics I s5ms_elct7.fm - Section Electronics I Midterm # Problems Points Total 5 Was the exam fair? yes no
2 EECS:3400 Electronics I s5ms_elct7.fm - 2 Problem 4 points For full credit, mark your answers yes, no, or not in all the given choices!. At room temperatures, the number of ionized donor/acceptor atoms in a semiconductor material doped for application in semiconductor devices, x depends on the concentration of donor/acceptor atoms. _ x is below 9% of all such atoms, x is close to 50% of all such atoms, x is above 99% of all such atoms, x depends on the intrinsic concentration of electron-hole pairs..2 When a pn-junction diode is biased by the voltage v D =v AC = 0.2V, the total current flow through the diode is the consequence of the cumulative effect of: x the transition of electrons through the depletion region from the n-side to the p- side of the pn-junction, x the transition of holes through the depletion region from the n-side to the p-side of the pn-junction, x the transition of electrons through the depletion region from the p-side to the n- side of the pn-junction, x the transition of holes through the depletion region from the p-side to the n-side of the pn-junction..3 Inside a semiconductor material: _x drift current is caused by the presence of an external electric field, x diffusion current is caused by the presence of the internal electric field, _x diffusion current is caused by the presence of a gradient in the concentration of minority charge carriers, x drift current is caused by the presence of the internal electric field,.4 PN-junction breakdown is caused by the: x avalanche multiplication of ionized donors inside the depletion region, x tunneling effect through thin potential barriers, x circuits where diodes are exposed to high reverse bias voltages, x avalanche multiplication of free charge carriers inside the depletion region, x tunneling effect through thick potential barriers.
3 EECS:3400 Electronics I s5ms_elct7.fm - 3 Problem 2 5 points Figure 2. shows the electrical circuit model of a pn-junction diode circuit in which all diodes are R i D V DD = 0V V DD + - V O v D V O =.5V Figure 2. A pn-junction diode circuit identical, and have their properties characterized by the following three statements: (a) they are "5mA devices", i.e. I DR (V DR =0.7V) =5mA, (b) for two values of the diodes current, i D and i D2, such that the relation i D2 =0i D holds, the corresponding diode voltages v D2 and v D are in the relation v D2 = v D V. (c) diodes breakdown voltage value is V Z = 5.5V; Problem statement For the electric circuit model of Figure 2., demonstrate an ability to apply the known relation (b) and the Kirchhoff s voltage law, to determine: - the diode current i D at which the indicated voltage V o will be having the value shown in Figure 2., - the value of resistance R such that the indicated voltage drop V O will be having the value shown in Figure 2.. Solution Hint # For full credit, give answers to all questions, prepare all required circuit diagrams, write all equations for which the space is left, and show all symbolic and numerical expressions whose evaluation produces shown numerical results. An explicit demonstration of understanding the following solution steps is expected. 2. Indicate in Figure 2. the positive reference directions of the current i D and voltage v D of just one of the diodes. 2.2 Calculate the common value v D of the voltage drops across individual diodes in the circuit of Figure 2.; show your work in the space reserved for equation (2-). Since the diodes are identical, and the same current i D flows through both of them, the individual diode
4 EECS:3400 Electronics I s5ms_elct7.fm - 4 voltages are in the following relation with the output voltage V O, v D = V O.5 = 2 2 = 0.75V (2-) 2.3 Calculate the difference between the known diodes reference voltage V DR and the actual diodes voltage v D in the circuit of Figure 2.; show your work in the space reserved for equation (2-2). After selecting the notation: i D = I DR, i D2 = i D, v D = V DR, v D2 = v D, one has v D = v D2 - v D = v D - V DR = = 0.05V (2-2) 2.4 Using two known diodes voltages, V DR and v D, and the diodes characterizing conditions (a) and (b), calculate the value of the actual current i D needed in the circuit model of Figure 2.; show your work in the space reserved for equation (2-3). With both, the calculated diodes voltage v D =0.825V > 0.2V and the reference voltage V DR = 0.7V > 0.2V, both current-voltage pairs, (i D,v D ) = (I DR,V DR ) and (i D2,v D2 ) = (i D,v D ), are well approximated by the forward-bias current-voltage relation, Therefore, i e v D -V DR D = V I T DR I DR I Se V DR V T and i D I S e v D V T v D i D = I DR e = e = = 36.9mA V T e 2 (2-3) 2.5 Prepare the KVL equation for the circuit in Figure 2., and show it in the space reserved for equation (2-4) KVL: V DD - R i D - V O = 0 (2-4) 2.6 Solve the KVL equation (2-4) for the resistance R, and calculate the value of R. Show your work in the space reserved for equation (2-5). R = V DD - V O 0.5 = = 230Ω i D (2-5)
5 EECS:3400 Electronics I s5ms_elct7.fm - 5 Problem 3 6 points Given is a circuit with two ideal diodes shown in Figure 3.. R D 2 R 2 V M = 0V R = 7kΩ V M V D V V N V N = 5V R 2 = 3kΩ Figure 3. A circuit with ideal diodes. Problem statement For the electric circuit model of Figure 3., demonstrate an ability to:. apply the piece-wise linear models of non linear circuit elements in the process of analysis of nonlinear circuits, 2. apply the large signal method of analysis to nonlinear electric circuits containing diodes in order to determine: - values of the voltages V and V 2 whose positive reference directions are indicated in the circuit model of Figure values of the positive reference direction currents of diodes in the circuit model of Figure 3.. Hint # For full credit, give answers to all questions, prepare all required circuit diagrams, write all equations for which the space is reserved, and show all symbolic and numerical expressions whose evaluation produces the shown numerical results. Solution An explicit demonstration of understanding the following solution steps is expected. 3. Make an educated guess as to the bias conditions of the two diodes in the circuit of Figure 3., and show your guess by checking the conditions on all four lines below, x the diode D is forward biased, x the diode D is reverse biased, x the diode D 2 is forward biased, x the diode D 2 is reverse biased.
6 EECS:3400 Electronics I s5ms_elct7.fm Construct the linear circuit which results when the ideal diodes in the circuit of Figure 3. are replaced by their models for the biasing condition guessed in Section 3., and draw the electrical model of the constructed circuit in the space reserved for Figure 3.2 Substituting the ideal diodes D and D 2 by their equivalent circuits for the states guessed in Section 3., gives the circuit of Figure 3.2 (by the definition of an ideal diode, a forward biased diode has an internal resistance of zero Ohms, and the internal resistance of a reverse biased diode is infinite). R C 2 A 2 I D2 R 2 V M V C V +- v + D 2 A - V N Figure 3.2 The circuit with ideal diodes replaced by their models for the biasing conditions guessed in Section To check the validity of the guesses made in Section 3., perform an analysis of the circuit of Figure 3.2 to determine the voltage across the diodes which were guessed reverse biased, and to determine the current through the diodes which were guessed forward biased. Show your work in the space reserved for equations (3-). Hint #2 For a meaningful process of performing the analysis, the positive reference directions of diodes voltages/currents must be shown in the circuit of Figure 3.2. Failure to show those positive reference directions reduces the credit for this part to 0.. In the circuit of Figure 3.2, the voltages V and V 2 are equal since the voltage drop across the forward biased ideal diode D 2 is equal to 0V. R R V = V 2 = V N R + R V = 0.5V 2 M 5 - R + R = 7+ 3 (3-) Which shows that the potential at C, being equal to V = 0.5V, is 0.5V above the potential of A, confirming that diode D is reverse biased in the circuit of Figure 3.2. To formally check the guess about the bias condition of the diode D 2, we ought to determine the direction of the current flowing through D 2 in the circuit of Figure 3.2. If the current of D 2 flows in the positive
7 EECS:3400 Electronics I s5ms_elct7.fm - 7 reference direction (anode to cathode), then D 2 is forward biased. Writing the KVL equation we obtain, V M +V N - I D2 R - I D2 R 2 = 0 solving the above equation for I D2, V M + V N I D2 = = =.5mA R + R 2 (7 + 3) 0 3 (3.)bis 3.4 Compare the result of the analysis performed in Section.3 with the guesses made in Section., to make a conclusion as to whether the bias conditions of both diodes were guessed correctly. Indicate your conclusion by appropriate checks on both lines below, x the biasing condition of both diodes has been guessed correctly, x the biasing condition of one, or more diodes has been guessed incorrectly. If the biasing condition of at least one diode is incorrect, repeat the steps of Sections. through.4 using the free space on the opposite page. 3.5 When the biasing conditions of all diodes have been guessed correctly, determine and write into the space reserved below the values of the voltages V and V which are indicated in the circuit of Figure.. Show your work in the space reserved for equations (3-2). Since now both guesses which led to the equivalent circuit of Figure 3.2 have been found correct, the results of the analysis performed on the circuit in Figure 3.2 are valid for the circuit of Figure 3.. Consequently, by equations (3-), (3.2) V = 0.5V V 2 = 0.5V 3.6 When the biasing conditions of all diodes have been guessed correctly, determine and write into the space reserved below the values of the currents flowing through diodes D and D 2 in the circuit of Figure 3.. Show your work in the space reserved for equations (3-3) Since the diode D is reverse biased, it does not conduct any current, so I D =0A. The current through diode D 2 has been determined by equations (3-)bis. Hence, the two current values, I D = 0A I D2 =.5mA (3.3)
Electronics I. Midterm #1
The University of Toledo s6ms_elct7.fm - Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no The University of Toledo s6ms_elct7.fm - 2 Problem 4 points For full credit,
More informationElectronics I. Midterm #1
The University of Toledo Section s7ms_elct7.fm - Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no The University of Toledo s7ms_elct7.fm - 2 Problem 4 points For full
More informationElectronics I. Midterm #1
The University of Toledo Section f6ms_elct7.fm - Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no The University of Toledo f6ms_elct7.fm - 2 Problem 4 points For full
More informationf14m1s_elct7.fm - 1 The University of Toledo EECS:3400 Electronocs I Electronics I Problems Points Total 15 Was the exam fair?
f4ms_elct7.fm - Electronics I Midterm I Examination Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no f4ms_elct7.fm - 2 Problem 4 points For full credit, mark your answers yes, no, or not
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationEE/COE 152: Basic Electronics. Lecture 3. A.S Agbemenu. https://sites.google.com/site/agbemenu/courses/ee-coe-152
EE/COE 152: Basic Electronics Lecture 3 A.S Agbemenu https://sites.google.com/site/agbemenu/courses/ee-coe-152 Books: Microelcetronic Circuit Design (Jaeger/Blalock) Microelectronic Circuits (Sedra/Smith)
More informationDigital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices
Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased
More information2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1
2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1 1. Define PN junction. When a p type semiconductor is joined to a N type semiconductor the contact surface is called PN junction. 2. What is an ideal
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationIENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Lecture-4
2 P-n Lecture-4 20 Introduction: If a junction is formed between a p-type and a n-type semiconductor this combination is known as p-n junction diode and has the properties of a rectifier 21 Formation of
More informationLaboratory No. 01: Small & Large Signal Diode Circuits. Electrical Enginnering Departement. By: Dr. Awad Al-Zaben. Instructor: Eng.
Laboratory No. 01: Small & Large Signal Diode Circuits Electrical Enginnering Departement By: Dr. Awad Al-Zaben Instructor: Eng. Tamer Shahta Electronics Laboratory EE 3191 February 23, 2014 I. OBJECTIVES
More informationSemiconductor Devices Lecture 5, pn-junction Diode
Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance
More informationLecture 2 p-n junction Diode characteristics. By Asst. Prof Dr. Jassim K. Hmood
Electronic I Lecture 2 p-n junction Diode characteristics By Asst. Prof Dr. Jassim K. Hmood THE p-n JUNCTION DIODE The pn junction diode is formed by fabrication of a p-type semiconductor region in intimate
More informationDownloaded from
Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
More information1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is
1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is
More informationBasic Electronics Important questions
Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials
More information55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More informationsemiconductor p-n junction Potential difference across the depletion region is called the built-in potential barrier, or built-in voltage:
Chapter four The Equilibrium pn Junction The Electric field will create a force that will stop the diffusion of carriers reaches thermal equilibrium condition Potential difference across the depletion
More informationDiscuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors
Discuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors Discuss covalent bonding Describe the properties of both p and n type materials Discuss both forward
More informationChapter 1: Semiconductor Diodes
Chapter 1: Semiconductor Diodes Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. 2 Diode Characteristics Conduction Region Non-Conduction Region The voltage across
More informationAnalog Electronic Circuits
Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits
More informationElectronic devices-i. Difference between conductors, insulators and semiconductors
Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit
More informationCHAPTER 8 The pn Junction Diode
CHAPTER 8 The pn Junction Diode Consider the process by which the potential barrier of a pn junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationCh5 Diodes and Diodes Circuits
Circuits and Analog Electronics Ch5 Diodes and Diodes Circuits 5.1 The Physical Principles of Semiconductor 5.2 Diodes 5.3 Diode Circuits 5.4 Zener Diode References: Floyd-Ch2; Gao-Ch6; 5.1 The Physical
More informationEDC Lecture Notes UNIT-1
P-N Junction Diode EDC Lecture Notes Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor
More information15 Transit Time and Tunnel NDR Devices
15 Transit Time and Tunnel NDR Devices Schematics of Transit-time NDR diode. A packet of carriers (e.g., electrons) is generated in a confined and narrow zone (generation region) and injected into the
More informationPhotodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
More informationIntrinsic Semiconductor
Semiconductors Crystalline solid materials whose resistivities are values between those of conductors and insulators. Good electrical characteristics and feasible fabrication technology are some reasons
More informationElectronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gábor Takács BME DED 17/09/2015 1 / 37 The basic properties of semiconductors Range of conductivity [Source: http://www.britannica.com]
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 1 (CONT D) DIODES
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 1 (CONT D) DIODES Most of the content is from the textbook: Electronic devices and circuit theory, Robert L.
More informationEC T34 ELECTRONIC DEVICES AND CIRCUITS
RAJIV GANDHI COLLEGE OF ENGINEERING AND TECHNOLOGY PONDY-CUDDALORE MAIN ROAD, KIRUMAMPAKKAM-PUDUCHERRY DEPARTMENT OF ECE EC T34 ELECTRONIC DEVICES AND CIRCUITS II YEAR Mr.L.ARUNJEEVA., AP/ECE 1 PN JUNCTION
More informationElectronic Circuits I. Instructor: Dr. Alaa Mahmoud
Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere
More information55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More informationSYED AMMAL ENGINEERING COLLEGE
SYED AMMAL ENGINEERING COLLEGE (Approved by the AICTE, New Delhi, Govt. of Tamilnadu and Affiliated to Anna University, Chennai) Established in 1998 - An ISO 9001:2008 Certified Institution Dr. E.M.Abdullah
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationLesson 08. Name and affiliation of the author: Professor L B D R P Wijesundera Department of Physics, University of Kelaniya.
Lesson 08 Title of the Experiment: Identification of active components in electronic circuits and characteristics of a Diode, Zener diode and LED (Activity number of the GCE Advanced Level practical Guide
More informationEXPERIMENT 10: SCHOTTKY DIODE CHARACTERISTICS
EXPERIMENT 10: SCHOTTKY DIODE CHARACTERISTICS AIM: To plot forward and reverse characteristics of Schottky diode (Metal Semiconductor junction) APPARATUS: D.C. Supply (0 15 V), current limiting resistor
More informationIENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU
ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown
More informationChapter 2. Diodes & Applications
Chapter 2 Diodes & Applications The Diode A diode is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a pn
More informationSection:A Very short answer question
Section:A Very short answer question 1.What is the order of energy gap in a conductor, semi conductor, and insulator?. Conductor - no energy gap Semi Conductor - It is of the order of 1 ev. Insulator -
More informationEC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS
EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationUnless otherwise specified, assume room temperature (T = 300 K).
ECE 3040 Dr. Doolittle Homework 4 Unless otherwise specified, assume room temperature (T = 300 K). 1) Purpose: Understanding p-n junction band diagrams. Consider a p-n junction with N A = 5x10 14 cm -3
More informationElectron Devices and Circuits (EC 8353)
Electron Devices and Circuits (EC 8353) Prepared by Ms.S.KARKUZHALI, A.P/EEE Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. Diode Characteristics Conduction Region
More informationDiodes and Applications
Diodes and Applications Diodes and Applications 2 1 Diode Operation 2 2 Voltage-Current (V-I) Characteristics 2 3 Diode Models 2 4 Half-Wave Rectifiers 2 5 Full-Wave Rectifiers 2 6 Power Supply Filters
More informationLecture -1: p-n Junction Diode
Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor to
More informationOFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1
OFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1 1-Defintion & Mechanisms of photodetection It is a device that converts the incident light into electrical current External photoelectric effect: Electrons are
More informationElectronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not
More information3A.1. Lecture 3A Semiconductors. Semiconductor Structure
3A.1 Lecture 3A Semiconductors Semiconductor structure. ptype semiconductor. ntype semiconductor. The pn junction. The pn junction characteristic (diode vi characteristic). Diode models. The Halleffect
More informationPrepared by: Dr. Rishi Prakash, Dept of Electronics and Communication Engineering Page 1 of 5
Microwave tunnel diode Some anomalous phenomena were observed in diode which do not follows the classical diode equation. This anomalous phenomena was explained by quantum tunnelling theory. The tunnelling
More informationLecture 7:PN Junction. Structure, Depletion region, Different bias Conditions, IV characteristics, Examples
Lecture 7:PN Junction Structure, Depletion region, Different bias Conditions, IV characteristics, Examples PN Junction The diode (pn junction) is formed by dopping a piece of intrinsic silicon, such that
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationChapter 2 PN junction and diodes
Chapter 2 PN junction and diodes ELEC-H402/CH2: PN junction and diodes 1 PN junction and diodes PN junction What happens in a PN junction Currents through the PN junction Properties of the depletion region
More informationPN Junction in equilibrium
PN Junction in equilibrium PN junctions are important for the following reasons: (i) PN junction is an important semiconductor device in itself and used in a wide variety of applications such as rectifiers,
More informationLecture 3: Diodes. Amplitude Modulation. Diode Detection.
Whites, EE 322 Lecture 3 Page 1 of 10 Lecture 3: Diodes. Amplitude Modulation. Diode Detection. Diodes are the fourth basic discrete component listed in Lecture 2. These and transistors are both nonlinear
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE-255 EXAM 1 September 11, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationObjective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
More informationDiode Limiters or Clipper Circuits
Diode Limiters or Clipper Circuits Circuits which are used to clip off portions of signal voltages above or below certain levels are called limiters or clippers. Types of Clippers Positive Clipper Negative
More informationTHERMIONIC AND GASEOUS STATE DIODES
THERMIONIC AND GASEOUS STATE DIODES Thermionic and gaseous state (vacuum tube) diodes Thermionic diodes are thermionic-valve devices (also known as vacuum tubes, tubes, or valves), which are arrangements
More informationR. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder
R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder pn junction! Junction diode consisting of! p-doped silicon! n-doped silicon! A p-n junction where
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationEJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre
EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.
More informationPHYS 3050 Electronics I
PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and
More informationFET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
More informationFINALTERM EXAMINATION. Spring PHY301- Circuit Theory
Date 14/2/2013 Eini FINALTERM EXAMINATION Spring 2010 PHY301- Circuit Theory Time: 90 min Marks: 60 Question No: 1 If we connect 3 capacitors in parallel, the combined effect of all these capacitors will
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationProject 6 Capacitance of a PN Junction Diode
Project 6 Capacitance of a PN Junction Diode OVERVIEW: In this project, we will characterize the capacitance of a reverse-biased PN diode. We will see that this capacitance is voltage-dependent and we
More informationEECE 481. MOS Basics Lecture 2
EECE 481 MOS Basics Lecture 2 Reza Molavi Dept. of ECE University of British Columbia reza@ece.ubc.ca Slides Courtesy : Dr. Res Saleh (UBC), Dr. D. Sengupta (AMD), Dr. B. Razavi (UCLA) 1 PN Junction and
More informationSection 2.3 Bipolar junction transistors - BJTs
Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationChapter 1: Diode circuits
Analog Electronics Circuits Nagamani A N Lecturer, PESIT, Bangalore 85 Email nagamani@pes.edu Chapter 1: Diode circuits Objective To understand the diode operation and its equivalent circuits To understand
More informationFIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)
FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there
More informationMOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
More informationWINTER 14 EXAMINATION. Model Answer. Subject Code: ) The answers should be examined by key words and not as word-to-word as given in the
Subject Code: 17215 WINTER 14 EXAMINATION Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationBASIC ELECTRONICS ENGINEERING
BASIC ELECTRONICS ENGINEERING Objective Questions UNIT 1: DIODES AND CIRCUITS 1 2 3 4 5 6 7 8 9 10 11 12 The process by which impurities are added to a pure semiconductor is A. Diffusing B. Drift C. Doping
More informationPart II. Devices Diode, BJT, MOSFETs
Part II Devices Diode, BJT, MOSFETs 49 4 Semiconductor Semiconductor The number of charge carriers available to conduct current 1 is between that of conductors and that of insulators. Semiconductor is
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationLecture 4. Reading: Chapter EE105 Fall 2007 Lecture 4, Slide 1 Prof. Liu, UC Berkeley
Lecture 4 OUTLNE Bipolar Junction Transistor (BJT) General considerations Structure Operation in active mode Large-signal model and - characteristics Reading: Chapter 4.1-4.4.2 EE105 Fall 2007 Lecture
More informationLec (03) Diodes and Applications
Lec (03) Diodes and Applications Diode Models 1 Diodes and Applications Diode Operation V-I Characteristics of a Diode Diode Models Half-Wave and Full-Wave Rectifiers Power Supply Filters and Regulators
More informationLesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-
Lesson 5 Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Types and Connections Semiconductors Semiconductors If there are many free
More informationDownloaded from
SOLID AND SEMICONDUCTOR DEVICES (EASY AND SCORING TOPIC) 1. Distinction of metals, semiconductor and insulator on the basis of Energy band of Solids. 2. Types of Semiconductor. 3. PN Junction formation
More information10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional)
EE40 Lec 17 PN Junctions Prof. Nathan Cheung 10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional) Slide 1 PN Junctions Semiconductor Physics of pn junctions (for reference
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationAnalog Electronics. Lecture 3. Muhammad Amir Yousaf
Analog Electronics Lecture 3 Discrete Semiconductor Devices Rectifier (Diodes) Light Emitting Diodes Zener Diodes Photo Diodes Transistors Bipolar Junction Transistors (BJTs) MOSFETs Diodes A diode is
More informationQUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.
FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:
More informationLAB IV. SILICON DIODE CHARACTERISTICS
LAB IV. SILICON DIODE CHARACTERISTICS 1. OBJECTIVE In this lab you will measure the I-V characteristics of the rectifier and Zener diodes, in both forward and reverse-bias mode, as well as learn what mechanisms
More informationPN Junction Diode Table of Contents. What Are Diodes Made Out Of?
PN Junction iode Table of Contents What are diodes made out of?slide 3 N-type materialslide 4 P-type materialslide 5 The pn junctionslides 6-7 The biased pn junctionslides 8-9 Properties of diodesslides
More informationEnergy band diagrams Metals: 9. ELECTRONIC DEVICES GIST ρ= 10-2 to 10-8 Ω m Insulators: ρ> 10 8 Ω m Semiconductors ρ= 1 to 10 5 Ω m 109 A. Intrinsic semiconductors At T=0k it acts as insulator At room
More informationMicroelectronic Circuits, Kyung Hee Univ. Spring, Bipolar Junction Transistors
Bipolar Junction Transistors 1 Introduction physical structure of the bipolar transistor and how it works How the voltage between two terminals of the transistor controls the current that flows through
More information5.1 BJT Device Structure and Physical Operation
11/28/2004 section 5_1 BJT Device Structure and Physical Operation blank 1/2 5.1 BJT Device Structure and Physical Operation Reading Assignment: pp. 377-392 Another kind of transistor is the Bipolar Junction
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationCHAPTER FORMULAS & NOTES
Formulae For u SEMICONDUCTORS By Mir Mohammed Abbas II PCMB 'A' 1 Important Terms, Definitions & Formulae CHAPTER FORMULAS & NOTES 1 Intrinsic Semiconductor: The pure semiconductors in which the electrical
More informationجامعة اإلسكندرية كلية الهندسة قسم الهندسة الكهربية أبريل ٢٠١٥
Alexandria University Faculty of Engineering Electrical Engineering Department April 2015 1a EE 132 Electronic Devices and Circuits First Year Time allowed: 1½ hours جامعة اإلسكندرية كلية الهندسة قسم الهندسة
More informationFET Channel. - simplified representation of three terminal device called a field effect transistor (FET)
FET Channel - simplified representation of three terminal device called a field effect transistor (FET) - overall horizontal shape - current levels off as voltage increases - two regions of operation 1.
More informationWish you all Very Happy New Year
Wish you all Very Happy New Year Course: Basic Electronics (EC21101) Course Instructors: Prof. Goutam Saha (Sec. 2), Prof. Shailendra K. Varshney (Sec. 1), Prof. Sudip Nag (Sec. 3 ), Prof. Debashish Sen
More informationIdeal Diode Summary. p-n Junction. Consequently, characteristics curve of the ideal diode is given by. Ideal diode state = OF F, if V D < 0
Course Contents ELE230 Electronics I http://www.ee.hacettepe.edu.tr/ usezen/ele230/ Dr. Umut Sezen & Dr. Dinçer Gökcen Department of Electrical and Electronic Engineering Hacettepe University and Diode
More informationBipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
More informationChapter Semiconductor Electronics
Chapter Semiconductor Electronics Q1. p-n junction is said to be forward biased, when [1988] (a) the positive pole of the battery is joined to the p- semiconductor and negative pole to the n- semiconductor
More informationChapter 14 Semiconductor Electronics Materials Devices And Simple Circuits
Class XII Chapter 14 Semiconductor Electronics Materials Devices And Simple Circuits Physics Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers
More information