FBG20N18B. Rad Hard e-gan 200V, 18A, 26mΩ Surface Mount (FSMD-B)

Transcription

1 Rad Hard e-gan 200V, 18A, 26mΩ Surface Mount (FSMD-B) Features Low RDS(ON) Ultra-low QG For High Efficiency Logic Level Light Weight grams New Compact Hermetic Package Source Sense Pin Total Dose - Rated to 300 krad Single Event - SEE immunity for LET of 83.7 MeV/mg/cm 2 With VDS up to 100% of rated Breakdown Low Dose Rate at 100 mrad/sec - Maintains Pre-Rad specification Neutron - Maintains Pre-Rad specification for up to 1 x Neutrons/cm 2 Description Freebird Semiconductor FSMD-B series of egan power switching HEMTs have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(ON) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging. Application Commercial Satellite EPS & Avionics Deep Space Probes High Speed Rad Hard DC-DC Conversion Rad Hard Motor Controllers Absolute Maximum Rating TC =25 o C unless otherwise noted Symbol Parameter-Conditions Value Units VDS Drain to Source Voltage (Note 1) 200 V ID Continuous Drain Current VGS=5V, TC= 25 o C, RθJA<56 o C/W 18 IDM Single-Pulse Drain Current tpulse 80µs 72 A VGS Gate to Source Voltage (Note 2) +6 / -4 V TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 o C Tsol Package Mounting Surface Temperature 260 o C ESD ESD Class 1A Thermal Characteristics Symbol Parameter-Conditions Value Units RθJA Thermal Resistance Junction to Ambient (Note 3) 56 RθJC Thermal Resistance Junction to Case 2.7 RθJL Thermal Resistance Junction to Lead - o C/W I/O Pin Assignment (Bottom View) Pin Symbol Description Visual Outline Physical Device 1 G Gate 2 D Drain 3 SS Source Sense 4 S Source Rev Q6 1 June 17, 2016

2 Electrical Characteristics TC =25 o C unless otherwise noted. Typical (TYP) values are for reference only. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Maximum Drain to Source Voltage VDSMAX VGS= 0V V Drain to Source Leakage IDSS VDS = 200V Tc= 25 o C VGS = 0V Tc= 125 o C µa Gate to Source Forward Leakage IGSS VGS = 5V Tc= 25 o C ma Gate to Source Reverse Leakage IGSS VGS = -4V Tc= 25 o C µa Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 3mA Tc= 25 o C V Gate to Source Threshold Voltage Temperature Coefficient VGS(th) / T VDS = VGS, ID = 3mA -55 o C < TA < 150 o C mv/ ºC Drain to Source Resistance (Note 4) RDS(ON) ID = 18A VGS = 5V Tc= 25 o C mω Source to Drain Forward Voltage (Note 5) VSD IS = 0.5A VG = 0V Tc= 25 o C 1.75 V Dynamic Characteristics TC =25 o C unless otherwise noted. Typical (TYP) values are for reference only. Input Capacitance PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS CISS pf Output Capacitance COSS f = 1MHz, VDS = 100V, VGS=0V (Note 6) pf Reverse transfer Capacitance CRSS 3 12 pf Gate Resistance RG f = 1MHz, VDS = VGS =0 V 0.4 Ω Total Gate Charge (Note 7) QG nc Gate to Drain Charge (Note 7) QGD ID =18 A, VGS = 5V, VDS =100V nc Gate to Source Charge (Note 7) QGS nc Output Charge (Note 8) QOSS VGS = 0V, VDS =100V 35 nc Source to Drain Recovery Charge QRR ID =18 A, VDS =100V <1 nc 2016 Freebird Semiconductor Corporation Page 2 of 14

3 Radiation Characteristics Freebird Semiconductor egan HEMTs are tested according to MIL-STD-750 Method 1019 for total ionizing dose validation. Every manufacturing lot is tested for total ionizing dose of Gamma radiation with an in-situ bias for (i) VGS = 5V, (ii) VDS=VGS=0V and (iii) VDS=80% BVDSS. Electrical Characteristics up to 300 krads TC =25 o C unless otherwise noted. Typical (TYP) values are for reference only. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Maximum Drain to Source Voltage VDSMAX VGS= 0V V Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 3mA V Drain to Source Leakage IDSS VDS = 200V, VGS = 0V µa Gate to Source Forward Leakage IGSS VGS = 5V ma Gate to Source Reverse Leakage IGSS VGS = -4V µa Drain to Source Resistance (Note 4) RDS(ON) ID = 18A, VGS = 5.0V mω Typical Single Event Effect Safe Operating Area TEST ENVIRONMENT VDS Voltage ( V) SEE SOA Ion LET MeV/mg/cm 2 Range µm Energy MeV VGS = 0 V VGS = -4V Xe Au Fig 1. Typical Single Event Effect Safe Operating Area Note : All Single Event Effect testing is performed on the K-500 Cyclotron at Texas A&M University 2016 Freebird Semiconductor Corporation Page 3 of 14

4 Figure 1. Figure 2. Typical Drain-Source Leakage Current Typical Gate-Source Leakage Current Vs Ambient Temperature vs Ambient Temperature Figure 3. Figure 4. Normalized Threshold Voltage versus Temperature Typical Output Characteristics 2016 Freebird Semiconductor Corporation Page 4 of 14

5 Figure 5. Figure 6. Typical Drain-Source ON Resistance Typical Drain-Source ON Resistance vs Gate-Source Voltage vs Ambient Temperature vs Gate-Source Voltage vs Drain Current Figure 8. Typical Normalized Drain-Source ON Resistance vs Ambient Temperature 2016 Freebird Semiconductor Corporation Page 5 of 14

6 Figure 9. Figure 10. Typical Inter-Electrode Capacitance Typical Gate Charge vs Drain Current vs Drain-Source Voltage V DD = 50V BT1 9V + P1 10kΩ C1 0.47uF Q s (Same as DUT) I D ID(max) 5V 1:N Rs 10Ω V(I D ) 5V V GG t on t off I CONST GS + V GS - DUT V GS Vplateau VGS(th) QGS QGD charge/time QGT Figure 11. Figure 12. Charge Test Circuit Typical Gate Charge Test Waveform 2016 Freebird Semiconductor Corporation Page 6 of 14

7 THERMAL CHARACTERISTICS 2016 Freebird Semiconductor Corporation Page 7 of 14

8 PACKAGE OUTLINE AND DIMENSIONS Symbol Inches Millimeters Min Max Min Max Note A B C D F G H J K L M N Ref. only P FSMD-B FOOTPRINT FOR PRINTED CIRCUIT BOARD DESIGN Symbol Inches Millimeters Min Max Min Max A B C D E F G H J Note 2016 Freebird Semiconductor Corporation Page 8 of 14

9 NOTE: Note 1. NEVER exceed the absolute maximum V DS of the device otherwise permanent damage/destruction may result. Note 2. NEVER exceed the absolute maximum V GS of the device otherwise permanent damage/destruction may result. We recommend use at no greater than +5V as the HEMT is fully conducting at this point. Note 3. RθJA measured with FSMD-B package mounted to double-sided PCB, thickness with 1.0 square inches of copper area on the top (mounting side) and a flood etch (3 square inches) on the bottom side. Note 4. Measured using four wire (Kelvin) sensing and pulse measurement techniques. Measurement pulse width is 80µs and duty cycle is 1%, maximum. Note 5. Operation of the device in the third quadrant region is not recommended Note 6. C iss = C GS + C GD with C DS shorted. C oss = C DS + C GD. C rss = C GD. Note 7. The gate charge parameters are measured using the circuit shown in Figure 11. Qs and associated components BT1, P1 and C1 form a high speed current source that serves as the test load for the DUT. A constant gate current (I const ) of 1.5-3mA is provided to the Gate of the DUT during the time that the ground switch (GS) is OFF (t off ). The DUT is switched ON and OFF using ground-sensed switch GS. The gate current is adjusted to yield the desired charge per unit time (I const * time per division) on the measuring oscilloscope. The GS pulse drive ON time (t on )is adjusted for the desired observability of the gate-source voltage (V GS ) waveform. The maximum duty cycle of the ground switch (t off /t on ) should be set to 1% maximum. Please note that all gate-related signals are referenced to the Source Sense pin on the package. At all times during the measurement, the maximum gate-source voltage is clamped to 5Vdc. Note 8. Guaranteed by design/device construction. Not tested Freebird Semiconductor Corporation Page 9 of 14

10 Freebird Semiconductor Part Number Information FB G 20 N 18 B 2 S F Freebird Semiconductor Material Technology Voltage Rating Polarity Radiation Level Screening Level Lead and Form Option Package Option Current Rating Ordering Information Availability Lead Form Options Screening Options Rad Assurance Options 1 character 1 character 1 character 1 = with stand-off pads C = COTS F = 300kRad 2 = without stand-off pads V = Extended Screen G = 500kRad S = Space Level H = 1000kRad PART NUMBER/BRAND SCREENING LEVEL SHIPPING *C *V *S Engineering Samples (COT) Extended Screening Space Level T - Trays Screening and qualification consistent to an equivalent MIL-PRF specification. COTS version FSMD-B units are intended for engineering development purposes only and NOT supplied with radiation performance guarantees nor supplemental data packages 2016 Freebird Semiconductor Corporation Page 10 of 14

11 Freebird Semiconductor Product Marking Information XXXX serialization number when required Part number & package information plus: L lead and form option S screening level H radiation level Company Identifier (FBS), date code and CAGE code: YY Last two digits of the current year WW Week number according to ISO FW34 CAGE code ESD rating of the device located directly over the Gate pin 2016 Freebird Semiconductor Corporation Page 11 of 14

12 Data Package Order Detail Consistent to MIL-PRF general specification Extended Visual 1. V - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. V- OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data SPACE Screen 1. S - STANDARD DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data E. Group A - Attributes Data Sheet F. Group B - Attributes Data Sheet G. Group C - Attributes Data Sheet H. Group D - Attributes Data Sheet 2. S - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Pre and Post Radiation Data 2016 Freebird Semiconductor Corporation Page 12 of 14

13 Disclaimers ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Freebird Semiconductor Corporation, its affiliates, agents, employees, and all persons acting on its or their behalf (collectively, Freebird ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Freebird makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose. To the maximum extent permitted by applicable law, Freebird disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Freebird market knowledge of typical requirements that are often placed on similar technologies in generic applications. Product specifications do not expand or otherwise modify Freebird terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Freebird products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Freebird product could result in personal injury or death. Customers using Freebird products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Freebird personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Freebird. Product names and markings noted herein may be trademarks of their respective owners. Export Administration Regulations (EAR) The products described in this datasheet could be subjected to the Export Administration Regulations (EAR). They may require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. International Traffic in Arms Regulations (ITAR) The products described in this datasheet could be subjected to the International in Arms Regulations (ITAR). They require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. Patents Freebird Semiconductor holds numerous U.S patent. Any that apply to the product(s) listed in this document are identified by markings on the product(s) or on internal components of the product(s) in accordance with U.S Patent laws egan is a registered trademark of Efficient Power Conversion Corporation, Inc. Data and specification subject to change without notice Freebird Semiconductor Corporation Page 13 of 14

14 Revision Datasheet Revision REV P REV Q REV # Product Status Proposal/development Characterization and Qualification Production Released Contact Freebird Semiconductor Corporation for further information and to order: info@freebirdsemi.com Phone: Website: Address: 1600 Osgood Street Unit # 2064 North Andover, MA USA 2016 Freebird Semiconductor Corporation Page 14 of 14