Development of JAXA POL DC/DC converter (POL: Point-Of-Load)

Transcription

1 The 23 rd Microelectronics Workshop Development of JAXA POL DC/DC converter (POL: Point-Of-Load) Electronic Devices and Materials Group Aerospace Research and Development Directorate, Japan Aerospace Exploration Agency Yoshiyuki YANO O, Naomi IKEDA, Satoshi KUBOYAMA November 11 th 2010

2 Background JAXA has developed 64bit MPU and has been developing SOI ASIC for space applications. These devices require power supply with low voltage and high current. POL DC/DC converter is the only solution to meet the need. <POL block diagram> MPU(HR5000):1.8V/3.3V, 4~6W MPU(HR5000S):1.5V/3.3V, 1W SOI-ASIC:1.5V/3.3V SOI-FPGA:1.5V/3.3V MOSFET Control-IC The 23rd Microelectronics Tsukuba 2

3 MOSFET: Key parameters Ron(on-resistance) and Qgd(gate charge) are very important characteristics for POL. Lower Ron and Qgd Lower Loss (POL: Higher-efficiency) Ron and Qgd depend on the chip size and they are trade-off relation. ChipA ChipB ChipC active area 10.46mm mm mm 2 -Result: The highest efficiency was attained with chipc. Low-Qgd was more effective than low-ron for higher efficiency. The 23rd Microelectronics Tsukuba 3

4 MOSFET: Target specification and test results ChipC was selected for POL with small charge in its size. Parameter Target spec(chipc) Test result Condition Size (3.000x1.898)mm 3.420x1.684mm Active area:2.82mm 2 VDSS 30V min 30V min ID=1mA VGS(th) 1.0~2.0V 1.0~2.0V ID=1mA,VDS=3V Ron typ.22mω typ.22 mω ID=2.2A, VGS=4.5V (ID=76.8A/cm 2 ) Qgd typ.5.0nc typ.3.3nc ID=4.4A,VDS=15V (ID=153.8A/cm 2 ) IDSS 25μA max 25μA max VDS=30V IGSS 100nA max 100nA max VGS=±10V Developed MOSFET(trench type) die size:3.420x1.684mm Manufactured by Fuji Electric Systems Co.,Ltd The 23rd Microelectronics Tsukuba 4

5 MOSFET: SEE and TID test result TID test result : 1kGy(Si) (100krad(Si)) Bias condition: 1)VGS=+10V,VDS=0V 2)VGS=-10V,VDS=0V 3)VDS=+24V,VGS=0V -Meet the specification after 100Krad irradiation. Parameter Specification Conditions VDSS 30V min ID=1mA IDSS 25μA max VDS=24V VGS(th) 1~2V VDS=VGS,ID=1mA SEE test result (SEB,SEGR) Facility: TIARA Ion: Xe, LET:69MeV(mg/cm 2 ), Range:35μm, VDS=15V, VGS=-3.0V Ion: Kr, LET=40MeV(mg/cm 2 ), Range:37μm, VDS=17V, VGS=-5.0V Fluence: 3.0E+5[p/cm 2 ] -No increase either in Ids nor Igs was observed. TID: Total Ionizing Dose SEE: Single Event Effects SEB: Single Event Burnout SEGR: Single Event Gate Rupture LET: Linear Energy Transfer The 23rd Microelectronics Tsukuba 5

6 Control-IC: Outline Synchronous rectification PWM control-ic -Input voltage: 4.5V to 30V -Output voltage: 1.2V to 3.3V -Max frequency: 500kHz -Protection: Soft start, Overvoltage protection, Under voltage lock out(uvlo),output over current protection -Input supply current: 1mA max -Shutdown Supply Current: 10uA max PWM: Pulse Width Modulation Control-IC Die size:2.6x2.3mm Manufactured by Fuji Electric Systems Co.,Ltd The 23rd Microelectronics Tsukuba 6

7 Control-IC: TID and SEE test result TID:1kGy(Si) (100krad(Si)), Radiation sourse:cobalt 60 Bias condition: 1)Vin=30V, Vout=2.5V 2)Vin=5V, Vout=3.35V -Vref: Fall by about 1.2% after 1kGy irradiation -Other parameters: Meet the specification after 1kGy irradiation SEE: Ion Xe, LET=69MeV(mg/cm 2 ), Range=35μm (Facility: TIARA) -Test condition: Vin=5V,Vout=3.3V, Iout=3A -SEL,SEU: No SEL/SEU was observed up to the fluence of 1.0E+7[p/cm 2 ] -Meet the specification after SEL/SEU test. SEL : Single Event Latch-up SEU: Single Event Upsets The 23rd Microelectronics Tsukuba 7

8 Control-IC: SET test result -SET test condition: Vin=5V,Vout=3.3V, Iout=3A, Output capacitor=100μf -SET: Cross section was1.0e-06 ~6.0E-06[cm 2 /device] (Small enough for practical use.) Facility TIARA Ion Energy LET in Si Range in Si [MeV] [MeV cm 2 /mg] [µm] Xe Kr Ar SET :Single Event Transient The 23rd Microelectronics Tsukuba 8

9 Control-IC: Origin of SET What is the Coues of SET? Vref area is a possible cause of SET, however the detailed area in Vref has not been specified. -Vref area : 1.8E-03[cm 2 ] -SET cross section : 1.0E-06 ~ 6.0E-06[cm 2 /device] Pulsed-Laser testing is in progress to specify the origin of SET. Vref area Vref: Voltage reference Control-IC:2.6x2.3mm 100um The 23rd Microelectronics Tsukuba 9

10 -Input voltage(vin): 4.5V~16V (rated voltage:5v) -Preset output voltage: 1.2V,1.5V,1.8V,2.5V, 3.3V (±2%)(externally adjustable) -Output current: 3A for 1.2V,1.5V and1.8v 2.6A for 2.5V, 2A for 3.3V -Switching frequency: 250kHz(typ) -Soft start: 11msec(externally adjustable) -Over current limiter, Output over voltage, UVLO, CE terminal ON/OFF control -Operating temperature: -55~+125 o C(Tc) -Shock: 1500G,0.5msec -Vibration: 20G,Sine wave -TID: 1kGy(Si) (100krad(Si)) -SEE: LET=64MeV(mg/cm 2 ) POL: Specification POL size:15x19x5.9mm(typ) the number of pins:26 mass:7.2g(max) Manufactured by Nippon Avionics Co.,Ltd The 23rd Microelectronics Tsukuba 10

11 POL: Electric performance(vin:5v,vout:3.3v) The 23rd Microelectronics Tsukuba 11

12 POL: Electric performance(vin:5v,vout:1.8v) The 23rd Microelectronics Tsukuba 12

13 POL: TID test result(vin:5v,vout:1.8v) Vout:-0.7 ~ -1.3% /1kGy Efficiency:-0.4 ~ -0.6% /1kGy The 23rd Microelectronics Tsukuba 13

14 Development schedule of POL Control -IC FY2007 FY2008 FY2009 FY2010 Development QT MOSFET Development QT POL Examination BBM ES FM QT Additional test ES release FM release Qualification -QT based on JAXA-QTS-2020B was completed in September POL DC/DC converter will be JAXA QML certified in October Related documents will be available in October Detail Specification : JAXA-QTS-2020/ Application Data Sheet : JAXA-ADS-2020/ Application Note by manufacturer The 23rd Microelectronics Tsukuba 14

15 Summary MOSFET -Trench type MOSFET was developed for space-qualified POL converter. Control-IC -Synchronous rectification PWM control-ic was developed for space-qualified POL converter. POL DC/DC converter -Compact, high efficient and high reliable POL converter was successfully developed for space applications. POL converter will be JAXA-QML qualified in Oct Thank-you for your support! The 23rd Microelectronics Tsukuba 15

16 APPENDIX The 23rd Microelectronics Tsukuba 16

17 POL: Electrical Characteristics(room temp) Parameter Spec Min Typ Max Unit Condition Output voltage % Vin=5V, Iout=rated Output current rated A Vin=4.5, 5, 16V Efficiency 3.3V % Vin=5V, Iout=2A(rated) 2.5V % Vin=5V, Iout=2.6A(rated) 1.8V % Vin=5V, Iout=3A(rated) 1.5V % Vin=5V, Iout=3A(rated) 1.2V % Vin=5V, Iout=3A(rated) Output ripple mvpp Output noise mvpp Regulation % UVLO Over current protection on V off off<on, 4.2(typ) V Vin=4.5, 5, 16V Iout=0, 1, 2, rated Iout=0A A Vin=5V The 23rd Microelectronics Tsukuba 17

18 POL: Electrical Characteristics(-55 o C,+125 o C) Parameter Spec Min Typ Max Unit Condition Output Voltage % Vin=5V,Iout=rated Output current rated A Vin=4.5, 5, 16V Efficiency 3.3V % Vin=5V,Iout=2A(rated) 2.5V % Vin=5V,Iout=2.6A(rated) 1.8V % Vin=5V, Iout=3A(rated) 1.5V % Vin=5V, Iout=3A(rated) 1.2V % Vin=5V, Iout=3A(rated) Output ripple mvpp Output noise mvpp Regulation % UVLO Over current protection on V off off<on, 4.2(typ) V Vin=4.5, 5, 16V Iout=0,1,2A,rated Iout=0A A Vin=5V The 23rd Microelectronics Tsukuba 18

19 POL: Mechanical and Thermal Characteristics Parameter Thermal Shock Temperature Cycling Vibration Shock Constant Acceleration Moisture Resistance Salt Atmosphere Solderability Lead Strength Seal Condition(1) 1011 cond.b,-55 o C-+125 o C,15 cycles 1010 cond.c, -65 o C-+150 o C, 100 cycles 2007 cond.a, 20G, sine, 20Hz-2000Hz, 3axis 2002 cond.b, 1500G, 0.5msec, 6axis 2001 cond.a, 5000G, Y1 Y2, 1min 1004, +25 o C-+65 o C, 90-98%RH, 10 cycles 1009 cond.a,24hour 2003, 245 o C±5 o C, 5sec 2004 cond.b2, 0.085±0.009kg 1014 cond.a2,1x10-6 atm cc/sec air max (1)MIL-STD-883 Method unless otherwise specified The 23rd Microelectronics Tsukuba 19

20 POL: Package Outline and Typical Dimensions Solder crack 14.2 unit: mm The 23rd Microelectronics Tsukuba 20