Single Switch IGBT Module

Transcription

1 DIM6ASM65-K Single Switch IGBT Module DS January 25 (LN23752) FEATURES High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS High Reliability Inverters Motor Controllers Traction Auxiliaries KEY PARAMETERS V CES 65V V CE(sat) * (typ) 4.V I C (max) 6A I C(PK) (max) 12A *(measured at the power busbars and not the auxiliary terminals) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 6V to 65V and currents up to 24A. The DIM6ASM65-K is a single switch 65V,n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA). This device is optimised for traction drives and other applications requiring high thermal cycling capability. Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM6ASM65-K Note: When ordering, please use the complete part number Fig. 2 Electrical connections - (not to scale) Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF Tel: +44-() Fax: +44-() Registered in England and Wales: No Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF

2 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25 C unless stated otherwise Symbol Parameter Test Conditions Max. Units V CES Collector-emitter voltage V GE =V, T VJ = -4 C 58 V V GE =V 63 V V GE =V, T VJ = 125 C 65 V V GES Gate-emitter voltage ±2 V I C Continuous collector current T case =9 C 6 A I C(PK) Peak collector current 1ms, T case =115 C 12 A P max Max.transistor power T case =25 C, T j =15 C 12.5 kw dissipation I 2 t Diode I 2 t value (Diode arm) V R =,t p =1ms,T vj =125 C 218 ka 2 s V isol Isolation voltage-per module Commoned terminals to base plate. AC RMS,1 1.2 kv min,5hz Q PD Partial discharge-per module IEC1287.V 1 =7V, V 2 =51V, 5Hz RMS 1 pc THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Critical Tracking Index): >6 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance -transistor (per switch) Continuous dissipation C/kW junction to case Rth(j-c) Thermal resistance -diode (per switch) Continuous dissipation C/kW junction to case Rth(c-h) Thermal resistance -case to heatsink Mounting torque 5Nm - 6 C/kW (per module) (with mounting grease) Tj Junction temperature Transistor C Diode C Tstg Storage temperature range C Screw torque Mounting M Nm Electrical connections -M Nm Electrical connections -M Nm 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3 ELECTRICAL CHARACTERISTICS T case = 25 C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE =V,VCE =VCES 3 ma VGE =V,VCE =VCES,Tcase =125 C 9 ma IGES Gate leakage current VGE = 2V,VCE =V ua VGE(TH) Gate threshold voltage IC =12mA,V GE =V CE V Collector-emitter saturation voltage VGE =15V,IC =6A VCE(sat) 4. V VGE =15V,IC =6A,,T VJ =125 C 5.6 V IF Diode forward current DC 6 A IFM Diode maximum forward current tp =1ms 12 A VF Diode forward voltage IF =6A 3.6 V IF =6A,T VJ =125 C 4.1 V Cies Input capacitance VCE =25V,VGE =V,f =1MHz 18 nf Cres Reverse transfer capacitance VCE =25V,VGE =V,f =1MHz 2.25 nf LM Module inductance nh RINT Internal transistor resistance.12 m SCData Short circuit.i SC Tj 125 C,VCC 44V, I 1 TBD A Note: Measured at the power busbars and not the auxiliary terminals L*is the circuit inductance + L M t p 1 us, I 2 VCE(max)=VCES L*.di/dt IEC TBD A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8

4 ELECTRICAL CHARACTERISTICS Tcase = 25 C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units t d(off) Turn-off delay time I C =6A 6. us t f Fall time V GE =±15V 25 ns E OFF Turn-off energy loss V CE =36V 218 mj t d(on) Turn-on delay time R G(ON) =4.3 R G(OFF) =12 9 ns t r Rise time C ge =66nF 25 ns E ON Turn-on energy loss L ~2nH 45 mj Q g Gate charge 12 uc Q rr Diode reverse recovery charge I F =6A,V CE =36V, 15 uc I rr Diode reverse recovery current di F /dt =2A/us 45 A E rec Diode reverse recovery energy 195 mj Tcase = 125 C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units t d(off) Turn-off delay time I C =6A 6. us t f Fall time V GE =±15V 25 ns E OFF Turn-off energy loss V CE =36V 263 mj t d(on) Turn-on delay time R G(ON) =4.3 R G(OFF) =12 7 ns t r Rise time C ge =66nF 2 ns E ON Turn-on energy loss L ~2nH 525 mj Q rr Diode reverse recovery charge I F =6A,V CE =36V, 15 uc I rr Diode reverse recovery current di F /dt =24A/us 56 A E rec Diode reverse recovery energy 3 mj 4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

5 C o m m on emitter T c a s e = 25'C V c e is measured at power busbar and not auxiliary terminals 1 C o mmon em itte r T c a s e = 125'C V c e is m easured at pow er b u s b a r and not a uxilia ry te r m inals 8 8 Collector current, Ic - (A) 6 Collector current, Ic - (A) V ge=1v V ge=12v V ge=15v V ge=2v C o llector-em itter voltage, Vce - (V) 2 V g e = 1 V V g e = 1 2 V V g e = 1 5 V V g e = 2 V C o llec to r-em itter voltage, V ce - (V) Fig.3 Typical output characteristics Fig.4 Typical output characteristics C o nd itions: T case = 125'C V ce = 36V R g (on) = 4.3 ohms R g (o ff) = 12 ohms C g e = 66nF. V g e = +/- 15V. E o ff E o n E rec 1 C onditions: T case = 125'C Ic = 4A V ce = 36V C ge = 66nF V ge = +/- 15V 8 Switching energy, Esw - (mj) 4 3 Switching energy, Esw - (mj) E off E on E rec C o llector current, Ic - (A) Fig.5 Typical switching energy vs collector current G ate resistance, Rg - (ohms) Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8

6 ºC 125ºC 12 Tvj=125 C Tvj=25 C 1 8 Forward current, IF - (A) 6 4 Collector current, Ic - (A) F o rw a rd voltage, VF - (V) 2 Conditions: Rgoff=12 Cge=66nF Vge=±15V Vcc=44V Collector emitter voltage, Vce - (V) Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area 14 1 Tj=125 C Reverse recovery current, Irr - (A) Transient thermal impedance, Zth(j-c) - ('C/kW) 1 R t h IG BT R t h diode P u l s e tim e, tp - (s) Reverse voltage, Vr - (V) Fig.9 Diode reverse bias safe operating area IG B T D iode R i ( C/kW ) ti (ms) R i ( C/kW ) ti (ms) Fig.1 Transient thermal impedance 6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

7 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 17g Module outline type code: A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8

8 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44() / Fax: +44() Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. SALES OFFICES Tel: +44() Benelux, Italy & Switzerland: Tel: +33() Fax: +33() Fax: +44() France: Tel: (1) , (2) Fax: (1) , (2) Germany, Northern Europe, Spain & Rest of World: Tel: +44() / Fax: +44() North America: Tel: (44) Fax: (44) Tel: (949) Fax: (949) Datasheet Annotations: These offices are supported by Representatives and Distributors in many countries world-wide. Dynex Semiconductor 23 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.