Some frequently used transistor parameter symbols and their meanings are given here.
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1 When you have completed this exercise, you will be familiar with several transistor parameter symbols. You will verify your knowledge with a list of common transistor parameter symbols and meanings. Some frequently used transistor parameter symbols and their meanings are given here. Transistor parameter symbols are like other abbreviations; they consist of one or more letters that appear Capital letter subscripts usually denote dc or maximum values. Lower case subscript letters usually represent ac (dynamic, rms, or instantaneous) values. FACET by Lab-Volt 177
2 AC parameters are usually represented by a. upper case subscripts. b. lower case subscripts. c. either lower or upper case subscripts. Subscripts usually denote the terminal junctions to which the parameter refers. For example, V CE(sat) refers to the collector-emitter saturation voltage. Current gain, referred to as beta ( ) in previous exercises, is listed as h FE for dc current gain and h fe for small-signal, ac current gain. You know h FE (not shown in this table) denotes dc current gain because a. h is lower case. b. fe is lower case. is capitalized. c. FE 178 FACET by Lab-Volt
3 The collector-emitter breakdown voltage symbol is V (BR)CEO. The (BR) indicates breakdown, and the CEO stands for collector-emitter with an open base terminal. The V in V (BR)CEO stands for a. a PNP transistor. b. an NPN transistor. c. voltage. d. volume. Using the tables shown in the following steps, determine the correct meaning of the parameter symbols listed in the questions. h fe is a. small-signal current gain. b. dc current gain. c. dc voltage gain. d. small-signal input impedance. FACET by Lab-Volt 179
4 V (BR)CEO is breakdown a. current, collector-emitter, base open. b. voltage, collector-base, emitter open. c. voltage, collector-emitter, base open. d. voltage, base-emitter, collector open. P D is a. power down. b. minimum power dissipation. c. maximum power dissipation. d. predetermined disaster. NF is a. b. noise frequency. c. new frequency. d. not found. V CE(sat) is a. collector saturation voltage. b. collector-base saturation voltage. c. collector-emitter voltage. d. collector-emitter saturation voltage. I EBO is emitter cutoff current a. (dc). b. (dc), collector open. c. (dc), base open. d. (ac), collector open. 180 FACET by Lab-Volt
5 Using the tables shown in the following steps, determine the correct transistor parameter symbol for each meaning listed in the questions. The symbol for rise time is a. t R. b. T r. c. t r. d. r t. The symbol for base current (dc) is a. I C. b. I B. c. I E. d. V B. The symbol for base-emitter voltage (dc) is a. V beo. b. V BEO. c. V be. d. V BE. FACET by Lab-Volt 181
6 The symbol for emitter current (instantaneous) is a. i e. b. I e. c. I E. d. i E. The symbol for small-signal current gain is a. h FE. b. h fe. c. H fe. d. H FE. Transistor parameter symbols are abbreviations for parameters. Capital letters are usually used for dc or maximum values. Lower case letters are usually used for ac or instantaneous values. Subscripts usually denote the terminal junctions to which the parameter refers. 182 FACET by Lab-Volt
7 1. Capital letters in transistor parameter symbols usually denote a. rms values. b. instantaneous values. c. dc values. d. ac values. 2. The dc current gain (common emitter) is abbreviated a. h fe. b. h FE. c. h fc. d. F T. 3. The dc base-collector voltage is abbreviated a. V BC. b. V bc. c. v bc. d. V BCO. 4. The symbol I CBO a. the base terminal open. b. c. the base and emitter terminals shorted. d. the emitter terminal open. FACET by Lab-Volt 183
8 5. In the transistor parameter symbol V (BR)CEO, the (BR) stands for a. base resistor. b. breakdown. c. base reference. d. buffer resistor. 184 FACET by Lab-Volt
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