3D activities at Léti. Role of 200 and 300mm lines. André ROUZAUD, Nicolas SILLON, Mark SCANNELL, David HENRY, Thierry MOURIER

Transcription

1 3D activities at Léti. Role of 200 and 300mm lines André ROUZAUD, Nicolas SILLON, Mark SCANNELL, David HENRY, Thierry MOURIER

2 Outline Introduction Leti approach for 3D Concept of toolbox and generic integration schemes Validations The key role of partnerships 3D line Role and overview Prototyping activities Summary and Conclusions

3 Leti at a Glance Figures 2010 Founded 1967 as part of CEA CEO Dr. Laurent Malier Staff 1700 Budget 250 M Capex 40 M Industrial Partners 300 Joint Labs 33 Value Creation 1700 Patent portfolio (265 in 2010) 40% Under license 37 Startups created; 5 within the last 2 years 200 and 300mm Si capabities 8,000 m² clean rooms Continuous operation

4 Leti Technologies: a 2-Axis Driver Diversification More than Moore 65nm Miniaturization 45nm 32nm 22nm 3D integration Design Lithography Advanced materials Characterization Packaging Advanced substrates Extensive 16nm FDSOI Ultimate MOS Highly selective More Moore Long experience in 3D blocks for different programs.

5 Historical background A lot of applications eager for 3D On many of them, Léti has started working longtime ago: 1988: First Leti TSV patent (intraconnection) R.Cuchet et Al 1999: MCM 3D - LETI 90 s: Wafer bonding, DRIE 1995: Vertical 3D Stacking

6 Why is 3D significant? Three different worlds interested in: Form factor decrease : Miniaturization of final device (X,Y,Z) 3D key drivers Performances improvement Decrease R, C, signal delay allowing to: Increase device bandwidth Decrease power consumption Cost decrease Si area decrease of digital chips leading to better yield Fitting functions with the most suitable technologies Reuse of existing Packaging, BEOL & FEOL lines One Chip SetTopBox (STM)

7 Outline Introduction Leti approach for 3D Concept of toolbox and generic integration schemes Validations The key role of partnerships 3D line Role and overview Prototyping activities Summary and Conclusions

8 Léti s 3D approach Everybody interested by 3D, with different products, different drivers, different constraints (ICs fabs, MEMS fabs, OSATs, IDMs, Fabless ). Léti specific approach to bring added value in 3D: significant efforts on 3D 140 FT people for management of applicative projects, design, process integration and specific developments. Investment on tools: 200 and 300 mm lines building generic technological blocks (toolbox of processes), in close collaboration with materials and equipments manufacturers. through a limited number of different integration schemes, turning ideas into functional demonstrators and cost effective products for our partners.

9 % Kelvin 5µm 09-Ref 10-Ref 11-Ref 12-Ref 13-Ref 14-Ref 15-SLE 16-SLE 17-SLE 0 0,1 0,2 0,3 0,4 0,5 Resistance [Ω ] Ch1 North Ch1 South Ch1 East Ch1 West Ch1 3D/Res Ch0 North Ch0 South Ch0 East Ch0 West Ch0 3D/ Res Ch 0 5x5 router Ch 1 5x5 router Ch1 North Ch1 South Ch1 East Ch1 West Ch1 3D/Res Ch0 North Ch0 South Ch0 East Ch0 West Ch0 3D/Res 3D Tool Box Model ing Thermo mechanical & thermal Modeling Electrical Modeling 3D implementation & partitionning Design layout Standard Design rules manuel & Design kit Layout & masks Technological modules Bonding, Thinning & Handling Components placement (WTW or CTW) Face to Face connections Through Silicon Via (TSV) Redistribution layers and Board connections Indust. / Mfg Reliability Test strategy Cost analysis

10 within an industrial perspective A way to quote maturity for each technology developed in the toolbox Product reliability data, industrial tools identified with partner Frozen process on Leti platform, reliability on technological bricks Process demonstrated on IC Electrical Validation on test vehicle Morphologic demonstration Ideas & IP Transfer 3D Toolbox Maturity level With industrial partner

11 Generic Toolbox Processes 1 active layer Face to Face Face to back 3 level stack Die to Die Die to Substrate TSV Handling Die Placement & Die Molding Solder balls Wire Bonding TSV First Temp. Bonding +slide off High thruput P&P Thick Polymer molding Copper Pillars Solder balls TSV Middle & BS AR10 Temp Bonding + Zonebond High precision P&P Thin Polymer molding µinserts Copper pillar TSV Last AR1 Permanent bonding Self Assembly Thin Oxide planarization µtubes TSV Last AR2 Wafer To Wafer WLUF Cu-Cu TSV Last AR3 Classic Underfill DTW Cu-Cu TSV Last High density

12 used in generic integration schemes 1 active layer Face to Face Face to back 3 level stack 1 active layer Face to Face Face to back 3 level stack Die/die Die/substrate TSV Handling Die placement Die molding Solder balls Wire Bonding TSV First Temp. Bonding +slide off High throuput P&P Thick Polymer molding Die/die Die/substrate TSV Handling Die placement Solder balls Wire Bonding TSV First Temp. Bonding +slide off High throuput P&P Die molding Thick Polymer molding Copper Pillars Solder balls TSV Middle AR10 Temp Bonding + zonebond High precision P&P Thin Polymer molding Copper Pillars Solder balls TSV Middle AR10 Temp Bonding + zonebond High precision P&P Thin Polymer molding µinserts Copper pillar TSV Last AR1 Permanent bonding Self Assembly Thin Oxyde planarisation µinserts Copper pillar TSV Last AR1 Permanent bonding Self Assembly Thin Oxyde planarisation µtubes TSV Last AR2 Wafer To Wafer µtubes TSV Last AR2 Wafer To Wafer Cu-Cu TSV Last AR3 Cu-Cu TSV Last AR3 TSV Last High density TSV Last High density TSV for CMOS image Sensors 3D Partitioning Memory on Logic High Performance

13 Outline Introduction Leti approach for 3D Concept of toolbox and generic integration schemes Validations The key role of partnerships 3D line Role and overview Prototyping activities Summary and Conclusions

14 A 3D toolbox developed with key equipments manufacturers 2010: Joint Dev. Program with SET Die to Wafer Direct bonding JOINT DEVELOPMENT PROGRAMS 2010 : Common lab LETI-SPTS 300mm TSV tool (DRIE, Diel and Metal deposit) Common labs

15 TSV Toolbox: collaboration with SPTS Léti has signed in Oct 2010 a stretegic partnership with SPP/SPTS, a world leading company offering three core processes for TSV (etch, dielectric liner, and metal barrier & seed). STS Pegasus-300 Trikon Planar-300 SPTS Versalys FxP Optimization of TiN and Cu MOCVD Deposition, compatible Via mid and Via last integrations Collaboration on a range of 3D TSV processes to optimize etch and deposition technologies used to create next-generation high aspect ratio TSVs. Research on alternative hardware and processes to address the need for new methods of cost-effective via fill. Extension to very high aspect ratios (> 10:1)through a new approach to current etch and deposition techniques. Via mid 10*80µ S. Kaminaga, chairman of SPTS and president of Sumitomo Precision Products (SPP), and L. Malier, CEO of Léti

16 Stacking Toolbox : Coll. with SET Chip to wafer + Flexible : size / technologies / sources + Yield : known good dies - Throughput - Alignment 2 strategies focus on speed or precision Wafer to wafer + Cost + Throughput - Wafer yield - Chips size must match SET FC 300 Léti-SET collaboration for C2W hybrid Cu- Cu direct bonding for 3D applications.

17 Stacking Toolbox : Coll with EVG Chip to wafer + Flexible : size / technologies / sources + Yield : known good dies - Throughput - Alignment 2 strategies focus on speed or precision Wafer to wafer + Cost + Throughput - Wafer yield - Chips size must match Léti-EVG collaboration for W2W debonding in the frame of a JDP. Ongoing 300mm wafer IR debonding 80µm thick 300mm wafer after debonding

18 Thinning/handling toolbox: Coll. with BSI Collaboration on temporaring bonding Temporary glue with slide off debonding Thermoplastic material / Waferbond + High thickness possible + Good thermal stability + Compatible with high topology - High temperature compatibility ZB new process + Compatible with HT processes + RT + Debonding possible directly on frame - Special carrier treatment

19 RDL Toolbox : Coll. with Replisaurus Developping ECPR, an innovative technology for metallization Principle of ECPR Examples of Cu patterns First prototype installed at Léti/Minatec June 2010.

20 Outline Introduction Leti approach for 3D Concept of toolbox and generic integration schemes Validations The key role of partnerships 3D line Role and overview Prototyping activities Summary and Conclusions

21 Context for 3D 3D integration technologies are now penetrating the industrial world. R&D centers now approached to back industrial developments. swift product development short time-to-market prototyping Need for tools compatible with industrial facilities. Massive Léti s investment in a 3D integration 300mm line aimed to cover a wide spectrum of industrial R&D developments (3D WLP, 3D IC, heterogeneous integration ) Setting up prototyping activities allowing industry to benefit from already mature Léti s 3D technologies: OPEN 3D prototyping line

22 3D lines inside Minatec campus Nanotech 300 3D line CMOS 200 mm MEMS 200 Nanoscale Characterization integration Design Microtech for biology Photonics

23 New 3D 300 R&D line SSEC 3306 (Stripping) Semitool Raider-300 (Cu ECD) AMAT Reflexion LK (CMP) SSEC 3301 (BS Cleaning) Microcontrol Leonardo (Dry film taper) 3D 300 Pilot Line Disco DAD6361 (edge grinder) EVG IQ-300 (mask aliner) Trikon Planar-300 (PECVD) Disco DGP 8760 (grinder) SUSS ACS-300 (spin coater) EVG 560 (bonder) STS Pegasus-300 (DRIE) SPTS Versalys FxP (ipvd & OMCVD) 3D 300 installed base On-going installation. Complete line for end of 2011 Automated P&P Heller 1705MKIII (reflow) Takatori team 300 (vacuum laminator) Semitool Raider (Solder, Cu ECD) SSEC 3301 (etch) DEK Europa (SMT assy)

24 Open 3D prototyping facility The concept : Open 3D is a 3D technology offer, targeting industrial customers and universities, giving access to 3D mature technologies with the following key drivers : Cost effective technologies based on mature technology / no R&D Customization upon request Short cycles time Means & Facilities : Open 3D is operating on LETI technological platforms : 200 & 300 mm Support by LETI skills on layout, process, metrology, characterization, tests & reliability Global offer possible from 3D design to component final packaging Customers advantages : Open 3D commitment : low cost, reduced cycle time, yields. Access to 3D technologies for any wafer format (200 & 300 mm) Possibility to make proof-of-concept and/or small volume production for prototyping & preserial

25 Open 3D technological offer Technological modules TSV Last AR 1:1 AR 2:1 AR 3:1 DRM / DK / layout / masks TSV Interconnections Micro-bumps Landing micro-bumps Pillars Interconnections Under Bump Metallurgy (UBM) UBM Redistribution layer (RDL) RDL Stacking : D2W Stacking

26 Open 3D : supply chain positioning. What a customer has to supply to Open 3D before starting a project? Tech. Specifications / planning Device layout / GDS files Device Wafers Purchase order Open 3D TechBox content 3D Design & Layout 3D Technology 3D Packaging Markets Products Assembly PCB Assy Open 3D product

27 Conclusions 3D integration is a major program worldwide and at Léti. Léti has developed an original approach to deal with the complexity and the different configurations This approach includes strategic partnerships with key tools manufacturers. Important role of tools manufacturers in 3D: proposing both mature and flexible tools involved in the technocal roadmaps. 200mm and 300mm 3D lines at Léti are fully functional. Prototyping activities successfully launched, allowing industry to benefit from already mature Léti s 3D technologies.

28 THANK YOU FOR YOUR ATTENTION

29 Integration schemes : CIS ST Micro / CEA-LETI 1 active layer Face to Face Face to back 3 level stack Die/die Die/substrate TSV Handling Die placement Die molding CIS application Solder balls Wire Bonding TSV First Temp. Bonding +slide off High throuput P&P Thick Polymer molding Cu liner TSV AR 1 : 1 Copper Pillars µinserts µtubes Solder balls Copper pillar TSV Middle AR10 TSV Last AR1 TSV Last AR2 Temp Bonding + zonebond Permanent bonding High precision P&P Self Assembly Wafer To Wafer Thin Polymer molding Thin Oxyde planarisation Cu-Cu TSV Last AR3 TSV Last High density Production mode since mm production STM Crolles

30 Integration schemes : Interposers Leti s Interposer technology Thinned wafer (120 µm) Die to Die Copper pillar or Die to substrate copper pillars Via Last TSV (Aspect Ratio Via Via Last 2-3) Mid

31 TSV Toolbox The three families of Through Silicon Via are available at Léti, with different targets, application fields and maturities. Via First TSV (Polysilicon filled) TSV first for medical application SOI substrate, High voltage Trench AR 20, 5x100µm Via Middle TSV (Copper filled) TiN MOCVD barrier Cu PVD/MOCVD Best flexibility in layout and design Higher density of I/Os AR 7, 2 x 15µm AR 10, 10x100µm Via Last TSV (Copper liner) High density Mid density Minimal impact on circuit layout mét al RD L S i O 2 f l a n c B C B bulle air sous BCB 60µ m AR 1 80x80µm AR 2, 60x120µm AR 3, 40x120µm

32 Face-to-Face Interconnections From solder balls to Cu-Cu bonding A wide range of interconnections C2C pillars SLID / TLP Classic Flip chip (Ball or stud bump) Solder-free µinserts Si Cu µtubes in SAC Si SiO 2 C2S pillars Cu-Cu Direct bonding > 100 µm µm range µm range Down to 5 µm Pitch reduction

33 Redistribution Layers and Board Connections High-density, high-performance packaging Cu RDL with organic passivation layer Few µm s of Cu (1 10 µm), Polymers for IDL Cu RDL (Damascene) with inorganic passivation layer Redistribution layer (RDL) Redistribution layer (Cu) ØTSV~3µm Thin Si~15µm Metal1 12 µm planarized chip