Data Sheet _ R&D. Rev Date: 8/17

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Christal Carson
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1 Data Sheet _ R&D Rev Date: 8/17

Micro Bump In coming years the interconnect density for several applications such as micro display, imaging devices will approach the pitch 10um and below.

are normally proposed. LBs has been developed Cu/SnAg bump due to low bonding temperature, high yield and high resistance toward electro-migration.

2 Micro Bump In coming years the interconnect density for several applications such as micro display, imaging devices will approach the pitch 10um and below. Many research centers across the globe are working to achieve the assembly at finer pitch. Making interconnects such as Cu-solder bonding, Cu-Cu bonding etc. are normally proposed. LBs has been developed Cu/SnAg bump due to low bonding temperature, high yield and high resistance toward electro-migration. Fine pitch micro bump (Cu/SnAg) Develop status : Micro bump of 10um pitch developed in 1 st Quarter of Developed device design Max bump height : 6~10um Min. bump pitch : 10um bump width : 6um bump to bump space : 4um 2

3 Thick RDL In general, Cu plating thickness more than 10um is called Thick RDL(Redistribution Layer) for WLCSP device. Normally, Power management WLCSPs requires higher currents it means that more thicker re-distribution thickness layer must be applied to satisfy the customer requirement. LBS is now already completed qualification for 20um RDL with one of our customer device. 10um standard RDL 20um Thick RDL Develop status : Qualification : Completed 20um of RDL on July 2017 and Now developing for 30um RDL and will be released in the end of 2017 Materials Information Polymeric Re-passivation : PI RDL (Redistribution layer) : Electroplated Copper up to 20um UBM : Electroplated Copper Ball Ball drop : SAC105, 305, 405 and LF35 Electroplated : Lead free solder (SnAg1.8%) Backside coating film : LC2850 3

Thin Wafer As electronics application has been reduced in size, integrated circuit (IC). Packaged devices should be reduced both in footprint and thickness of wafer.

4 Thin Wafer As electronics application has been reduced in size, integrated circuit (IC). Packaged devices should be reduced both in footprint and thickness of wafer. The main motivation for the development of smaller package is the demand for portable communications device. One of crucial issues in thinning wafer is wafer warpage problem after backgrind process especially for the device applied BSP(Back side Protection) material to enhance the chip strength. Key technology to develop thinned capability in the back-grind is how to handle wafer with low wafer warpage level or how to do the stabilize wafer handling capability after back grinding process. Less than 100um Wafer thinning without any wafer handling issue Wafer thinning high wafer warp Develop status : Developing less than 100um wafer thinning capability with BSP(Back side Protection) material in end of

Thermal Simulation Overview To reduce product development cost and time, traditional prototyping and testing has largely been replaced in the last decade by a simulation-driven design process.

5 Thermal Simulation Overview To reduce product development cost and time, traditional prototyping and testing has largely been replaced in the last decade by a simulation-driven design process. Such a process, which reduces the need for expensive and time-consuming physical prototypes, allows engineers to successfully predict product performance with easy-to-modify computer models Detailed Models. Employs thermal modeling techniques using 6SigmaET thermal simulation software Main purpose to use thermal simulation Thermal simulation need to be used in three phases of a workflow; 1. To perform initial concept study 2. Optimization in the design phase 3. Verification of manufacturing data before mass production LBs provide thermal solution to optimize component level designs. 5

6 LCR Meter Overview LCR meter is a type of electronic test equipment used to measure the Inductance(L), Capacitance (C), Resistance (R) of an electronic component. Impedance measurement is important not only in passive components but also several type of bump processed wafer. Also giving it the ability to cover the electrical characterization and evaluation of material or virtually any other type of electronic device. Detailed Models & Key Features Key sight B1500A Semiconductor Analyzer - Range up to 200V / 1A & Minimum measurement resolution 10fA/2uV - Spot, sweep and more measurement capabilities, sampling (time domain)measurement from 100us - Pulse measurement from 500us pulse width Main purpose to use LCR meter 1. This is used to verify that the device is operating properly under the actual operating conditions of the circuit 2. It is used to quickly test any device or measure an approximation of device characteristic values 6

7 R&D Status of Each Product Line LBS Package Biz Roadmap 7

Silicon Interposers enable high performance capacitors

Silicon Interposers enable high performance capacitors Interposers between ICs and package substrates that contain thin film capacitors have been used previously in order to improve circuit performance. However, with the interconnect inductance due to wire