SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 P IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify esign (See App. Note AN00) l Fully Characterized Avalanche Voltage and Current S S S G Top View A SO-8 Absolute Maximum Ratings Parameter Max. Units T A = 25 C Continuous rain Current, V 0V.9 T A = 70 C Continuous rain Current, V 0V.5 A I M Pulsed rain Current 5 A = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 30 V dv/dt Peak iode Recovery dv/dt 7.8 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (.6mm from case ) C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θja Junction-to-Ambient 50 C/W Notes through are on page 8 2/8/0
2 IRF7465 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 50 V V GS = 0V, I = 250µA V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.9 V/ C Reference to 25 C, I = ma ƒ R S(on) Static rain-to-source On-Resistance 0.28 Ω V GS = 0V, I =.4A ƒ V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA I SS rain-to-source Leakage Current 25 V S = 50V, V GS = 0V µa 250 V S = 20V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 00 V GS = 30V na Gate-to-Source Reverse Leakage -00 V GS = -30V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 0.75 S V S = 50V, I =.4A Q g Total Gate Charge 0 5 I =.4A Q gs Gate-to-Source Charge nc V S = 20V Q gd Gate-to-rain ("Miller") Charge V GS = 0V t d(on) Turn-On elay Time 7.0 V = 75V t r Rise Time.2 ns I =.4A t d(off) Turn-Off elay Time 0 R G = 6.0Ω t f Fall Time 9.0 V GS = 0V ƒ C iss Input Capacitance 330 V GS = 0V C oss Output Capacitance 80 V S = 25V C rss Reverse Transfer Capacitance 6 pf ƒ =.0MHz C oss Output Capacitance 420 V GS = 0V, V S =.0V, ƒ =.0MHz C oss Output Capacitance 4 V GS = 0V, V S = 20V, ƒ =.0MHz C oss eff. Effective Output Capacitance 76 V GS = 0V, V S = 0V to 20V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 40 mj I AR Avalanche Current.9 A iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.3 (Body iode) showing the A G I SM Pulsed Source Current integral reverse 5 (Body iode) p-n junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S =.4A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F =.4A Q rr Reverse RecoveryCharge nc di/dt = 00A/µs ƒ 2
3 I, rain-to-source Current (A) I, rain-to-source Current (A) IRF VGS TOP 5V 2V 0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 00 0 VGS TOP 5V 2V 0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 6.0V 6.0V 20µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 0. 20µs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I =.9A I, rain-to-source Current (A) 0 T = 50 J C T J = 25 C V S= 25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 I, rain-to-source Current (A) C, Capacitance(pF) IRF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss V GS, Gate-to-Source Voltage (V) I =.4A V S = 20V V S = 75V V S = 30V V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) T A = 25 C T J = 50 C Single Pulse OPERATION IN THIS AREA LIMITE BY R S (on) 00µsec msec 0msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Fig 8. Maximum Safe Operating Area Forward Voltage 4
5 IRF V S R I, rain Current (A) R G V GS 0V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. Switching Time Test Circuit + - V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Ambient Temperature V S 90% 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 = PM 0.0 t t2 SINGLE PULSE Notes: (THERMAL RESPONSE). uty factor = t / t 2 2. Peak T J= P M x Z thja + TA t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R S ( on), rain-to-source On Resistance ( Ω ) R S(on), rain-to -Source On Resistance (Ω) IRF V GS = 0V I =.4A I, rain Current (A) V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 2V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R) SS R G V S 20V V G tp Q GS L.U.T I AS 0.0Ω Q G Q G Charge 5V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) I TOP 0.8A.5A BOTTOM.9A Starting T, Junction Temperature ( J C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6
7 IRF7465 SO-8 Package etails 5 E - A - - C - e 6X - B e B 8X A 0.25 (.00) M C A S B S A H 0.25 (.00) M A M 0.0 (.004) θ L 8X K x 45 NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M C O NTR O LLIN G IM E NS IO N : IN CH. 3. IMENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. O U TLIN E C O N FO R M S TO JE EC O U TLIN E M S-02A A. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS M O L PR O TRU S IO N S N O T TO E XC EE 0.25 (.006). 6 IM EN SIO N S IS TH E LEN G TH O F LE A FO R S O L ER IN G TO A S UB S TR A TE.. θ 6 C 8X IM INC HES MILLIMETER S MIN M AX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7
8 IRF7465 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 22mH R G = 25Ω, I AS =.9A. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board ata and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 2/0 8
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More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
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Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 0%
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Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLMS5703PbF. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.18Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
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l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
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SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings
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