I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc
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1 SLB40N26C / SLI40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 40A, 260V, R DS(on) typ. = 0.12Ω@ = 10 V - Low gate charge ( typical 55 nc) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D G S D2-PAK I2-PAK G G D S S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter SLB40N26C/SLI40N26C Units S Drain-Source Voltage 260 V Drain Current - Continuous (T C =25 ) 40 A - Continuous (T C = 100 ) 20 A M Drain Current - Pulsed (Note 1) 130 A S Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 1120 mj I AR Avalanche Current (Note 1) 40 A E AR Repetitive Avalanche Energy (Note 1) 25.6 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T C = 25 ) 256 W P D - Derate above W/ T J, T STG Operating and Storage Temperature Range -55 to +150 Maximum lead temperature for soldering purposes, T L 1/8" from case for 5 seconds 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SLB40N26C/SLI40N26C Units R θjc Thermal Resistance, Junction-to-Case 0.49 /W R θjs Thermal Resistance, Case-to-Sink Typ. 0.5 /W R θja Thermal Resistance, Junction-to-Ambient 62.5 /W
2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 ua V BS Breakdown Voltage Temperature / T J Coefficient = 250 ua, Referenced to V/ SS Zero Gate Voltage Drain Current = 260 V, = 0 V ua = 208 V, T C = ua I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, = 250 ua V R DS(on) Static Drain-Source On-Resistance = 10 V, = 20 A Ω g FS Forward Transconductance = 40 V, = 20 A (Note 4) S Dynamic Characteristics C iss Input Capacitance pf C oss Output Capacitance = 25 V, = 0 V, f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t = 130 V, r Turn-On Rise Time = 40 A, ns R G = 25 Ω t d(off) Turn-Off Delay Time ns (Note 4, 5) t f Turn-Off Fall Time ns Q g Total Gate Charge = 208 V, = 40 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4, 5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 40 A V t rr Reverse Recovery Time = 0 V, I S = 40 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/us (Note 4) uc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS = 40A, = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 40A, di/dt 200A/us, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature
3 Typical Characteristics 10 2 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 祍 Pulse Test 2. T C = 25? 10-1, Drain-Source Voltage [V] o C 25 o C -55 o C 1. = 40V 祍 Pulse Test , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ce R DS(ON) [O ], Drain-Source On-Resistanc = = 20V? Note : T J = 25? R, Reverse Drain Current [A A] 150 o C 25 o C 1. = 0V 祍 Pulse Test V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3000 C iss = C gs + C gd (C ds = shorted) 12 Capacitance [pf] C iss C oss C rss V, Drain-Source Voltage [V] DS C oss = C ds + C gd C rss = C 10 gd? Notes ; 1. = 0 V 2. f = 1 MHz Figure 5. Capacitance Characteristics [V], Gate-Source Voltage [ = 208V? Note : = 40A Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
4 Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 e = 0 V 2. = 250 礎 T J, Junction Temperature [ o C] R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. = 20 A T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 3 Operation in This Area is Limited by R DS(on) T C = 25 o C 2. T J = 150 o C 3. Single Pulse 1 ms 10 ms 100 ms DC 100 s , Drain-Source Voltage [V] T C, Case Temperature [? ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Z? JC (t), Thermal Response 10-2 D= Z? JC (t) = 0.49 o C/W Max. 2. Duty Factor, D=t 1 /t T JM - T C = P DM * Z? JC (t) Single pulse PDM t1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
5 12V 3mA Current Regulator 200nF 50KΩ VGS Gate Charge Test Circuit & Waveform 300nF Same Type as R 1 R 2 Q gs Q g Q gd Current Sampling (I G ) Resistor Current Sampling ( ) Resistor Charge Resistive Switching Test Circuit & Waveforms R L V in V out ( 0.5 rated ) V out 90% R G V in 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L L 1 E AS = ---- L L I 2 AS 2 BS BS -- Vary t p to obtain required peak BS I AS R G C (t) t p t p Time (t)
6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + I S Driver -- L R G Same Type as dv/dt controlled by by 밨RG G I ISD S controlled by by Duty pulse Factor period 밆? ( Driver ) Gate Pulse Width D = Gate Pulse Period I S S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
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UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
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UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
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200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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